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CN-121983851-A - Gallium nitride-based semiconductor laser with carrier gradient graded waveguide layer

CN121983851ACN 121983851 ACN121983851 ACN 121983851ACN-121983851-A

Abstract

The invention provides a gallium nitride-based semiconductor laser with a carrier gradient graded waveguide layer, wherein the lower waveguide layer and the upper waveguide layer are a carrier gradient graded lower waveguide layer and a carrier gradient graded upper waveguide layer respectively, and the SIMS test In ion intensity distribution curve or the fitting curve of In atomic concentration distribution curve, the fitting curve of forbidden band width distribution curve, the fitting curve of electron mobility distribution curve and the SIMS test In ion intensity distribution curve or the fitting curve of In atomic concentration distribution curve, the fitting curve of forbidden band width distribution curve and the fitting curve of electron mobility distribution curve of the carrier gradient graded lower waveguide layer at two sides of an active layer respectively meet DoseDesp function distribution or Boltzmann function distribution, so that the carrier gradient graded upper waveguide layer and the carrier gradient graded lower waveguide layer at two sides of the active layer form concave forbidden band width distribution and convex electron mobility distribution, and the performance of the gallium nitride-based semiconductor laser is further improved.

Inventors

  • ZHENG JINJIAN
  • LAN JIABIN
  • HU ZHIYONG
  • CHEN CHENGJIE
  • ZHANG JIANGYONG
  • DENG HEQING
  • XUN FEILIN
  • YANG LIXUN
  • CHEN WANJUN
  • ZHONG ZHIBAI
  • LIU ZIHAN
  • LI XIAOQIN
  • CAI XIN

Assignees

  • 安徽格恩半导体有限公司

Dates

Publication Date
20260505
Application Date
20260130

Claims (10)

  1. 1. The gallium nitride-based semiconductor laser with the carrier gradient graded waveguide layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer, an upper limiting layer and a contact layer which are sequentially arranged from bottom to top, and is characterized in that the lower waveguide layer is a carrier gradient graded lower waveguide layer, the upper waveguide layer is a carrier gradient graded upper waveguide layer, the carrier gradient graded lower waveguide layer comprises a first carrier gradient graded lower waveguide layer and a second carrier gradient graded lower waveguide layer, the first carrier gradient graded lower waveguide layer is arranged below the second carrier gradient graded lower waveguide layer, the carrier gradient graded upper waveguide layer comprises a first carrier gradient graded upper waveguide layer and a second carrier gradient graded upper waveguide layer, and the first carrier gradient graded upper waveguide layer is arranged below the second carrier graded upper waveguide layer; SIMS test In ion intensity distribution curve or In atomic concentration distribution curve fitting curve, forbidden band width distribution curve fitting curve, electron mobility distribution curve fitting curve of the waveguide layer under the gradient, SIMS test In ion intensity distribution curve or In atomic concentration distribution curve fitting curve, forbidden band width distribution curve fitting curve, electron mobility distribution curve fitting curve all meet DoseDesp function distribution or Boltzmann function distribution; The forbidden bandwidth of the first carrier gradient lower waveguide layer is larger than or equal to that of the second carrier gradient upper waveguide layer, and the second carrier gradient lower waveguide layer is larger than or equal to that of the first carrier gradient upper waveguide layer; And the electron mobility of the first carrier gradient lower waveguide layer is smaller than or equal to that of the second carrier gradient upper waveguide layer and smaller than or equal to that of the second carrier gradient lower waveguide layer and smaller than or equal to that of the first carrier gradient upper waveguide layer.
  2. 2. The gallium nitride-based semiconductor laser with a graded waveguide layer according to claim 1, wherein the SIMS test In ion intensity profile or In atomic concentration profile of the waveguide layer under graded carrier gradient satisfies DoseDesp that the function distribution is y 1 =A 1 +（A 2 -A 1 ）/(1+10^((B-x 1 )*p)),A 1 as the baseline dose, a 2 as the saturation dose, B as the midpoint depth, p as the gradient coefficient, y 1 as the SIMS test In ion intensity profile or In atomic concentration of the waveguide layer under graded carrier gradient, x 1 as the thickness of the waveguide layer under graded carrier gradient, wherein 0≤a 1 ≤30E18,0≤A 2 ≤ 30E22,0≤b≤10, -800≤p≤300; The SIMS test In ion intensity distribution curve or In atomic concentration distribution curve of the carrier gradient upper waveguide layer meets DoseDesp that the function distribution is y 2 =A 1 '+（A 2 '-A 1 '）/(1+10^((B'-x 2 )*p')),A 1 'as a baseline dose, A 2 ' as a saturation dose, B 'as a midpoint depth, p' as a gradient coefficient, y 2 as the SIMS test In ion intensity distribution curve or In atomic concentration of the carrier gradient upper waveguide layer, and x 2 as the thickness of the carrier gradient upper waveguide layer, wherein A1 'is more than or equal to 0 and less than or equal to 20E20,0', A2 is more than or equal to 30E20,0, B is more than or equal to 75,0 and p is more than or equal to 533000.
  3. 3. The gallium nitride-based semiconductor laser with a graded carrier gradient waveguide layer according to claim 1, wherein the SIMS test In ion intensity distribution curve or the fitting curve of In atomic concentration distribution curve of the graded carrier gradient waveguide layer satisfies the Boltzmann function distribution that y 3 =C 2 +（C 1 -C 2 ）/(1+exp^((x 1 -D)*E)),C 1 is a low-limit asymptotic value, C 2 is a high-limit asymptotic value, D is a midpoint threshold, E is a slope coefficient, y 3 is the SIMS test In ion intensity distribution curve or In atomic concentration of the graded carrier gradient waveguide layer, x 1 is the thickness of the graded carrier gradient waveguide layer, wherein 3E15 is less than or equal to C 1 ≤30E21,3E14≤C 2 is less than or equal to 30E18,0 is less than or equal to D is less than or equal to 20,0.00001 is less than or equal to 0.2; The SIMS test In ion intensity distribution curve or the fitting curve of In atom concentration distribution curve of the carrier gradient upper waveguide layer meets the condition that the Boltzmann function distribution is y 4 =C 2 '+（C 1 '-C 2 '）/(1+exp^((x 2 -D')*E')),C 1 ' which is a low-limit asymptotic value, C 2 ' which is a high-limit asymptotic value, D ' which is a midpoint threshold value, E ' which is a slope coefficient, and y 4 which is the SIMS test In ion intensity distribution curve or In atom concentration of the carrier gradient upper waveguide layer, and x 2 which is the thickness of the carrier gradient upper waveguide layer, wherein C 1 '≤20E21,3E16≤C 2 ' which is more than or equal to 2E18 and less than or equal to 30E22,0 ' which is more than or equal to 50,0.00001 and E ' which is more than or equal to 0.2.
  4. 4. The gallium nitride-based semiconductor laser with the graded waveguide layer according to claim 1, wherein the fitted curve of the forbidden bandwidth distribution curve of the graded waveguide layer satisfies DoseDesp that the function distribution is y 5 =F 1 +（F 2 -F 1 ）/(1+10^((G-x 1 )*H)), F 1 as the baseline dose, F 2 as the saturation dose, G as the midpoint depth, H as the gradient coefficient, y 5 as the forbidden bandwidth of the graded waveguide layer, x 1 as the graded waveguide layer thickness, wherein 0≤F 1 ≤30,0≤F 2 ≤40, 0≤G≤10, 0≤H≤4000; The fitted curve of the band gap distribution curve of the carrier gradient graded upper waveguide layer meets DoseDesp function distribution, wherein y 6 =F 1 '+（F 2 '-F 1 '）/(1+10^((G'-x 2 )*H')),F 1 ' is a baseline dose, F 2 ' is a saturation dose, G ' is a midpoint depth, H ' is a gradient coefficient, y 6 is the band gap of the carrier gradient graded upper waveguide layer, and x 2 is the thickness of the carrier gradient graded upper waveguide layer, wherein F 1 '≤30,0≤F 2 ' is more than or equal to 0 and less than or equal to 40, G ' is more than or equal to 0 and less than or equal to 10, and H ' is more than or equal to 30000 and less than or equal to 30; The fitted curve of the electron mobility distribution curve of the waveguide layer under the gradient of the carrier satisfies DoseDesp that the function distribution is y 7 =J 1 +（J 2 -J 1 ）/(1+10^((K-x 1 )*L)),J 1 as a baseline dose, J 2 as a saturation dose, K as a midpoint depth, L as a gradient coefficient, y 7 as the electron mobility of the waveguide layer under the gradient of the carrier and x 1 as the thickness of the waveguide layer under the gradient of the carrier, wherein: J 1 ≤100000,200≤J 2 is less than or equal to 100 20000,0K is less than or equal to 10, L is more than or equal to-40000 and less than or equal to 40; The fitted curve of the electron mobility distribution curve of the carrier gradient graded upper waveguide layer meets the requirement that DoseDesp functions are distributed so that y 8 =J 1 '+（J 2 '-J 1 '）/(1+10^((K'-x 2 )*L')),J 1 'is a baseline dose, J 2 ' is a saturation dose, K 'is a midpoint depth, L' is a gradient coefficient, y 8 is the electron mobility of the carrier gradient graded upper waveguide layer, x 2 is the thickness of the carrier gradient graded upper waveguide layer, wherein J 1 '≤100000,200≤J 2 'is more than or equal to 100 and less than or equal to 20000,0' is more than or equal to K 'is more than or equal to 75,40 and less than or equal to L' is more than or equal to 4000.
  5. 5. The gallium nitride-based semiconductor laser with the graded waveguide layer according to claim 1, wherein the fitted curve of the forbidden bandwidth distribution curve of the graded waveguide layer satisfies the Boltzmann function distribution that y 11 =N 2 +（N 1 -N 2 ）/(1+exp^((x 1 -S)/T)),N 1 is a low-limit asymptotic value, N 2 is a high-limit asymptotic value, S is a midpoint threshold, T is a slope coefficient, y 11 is the forbidden bandwidth of the graded waveguide layer, x 1 is the thickness of the graded waveguide layer, wherein N 1 ≤30,0≤N 2 is not more than 0 and not more than 40, S is not less than 0 and not more than 20,0.00001 and T is not more than 0.2; The fitted curve of the forbidden bandwidth distribution curve of the carrier gradient graded upper waveguide layer meets the condition that Boltzmann function distribution is that y 12 =N 2 '+（N 1 '-N 2 '）/(1+exp^((x 2 -S')/T')),N 1 ' is a low-limit asymptotic value, N 2 ' is a high-limit asymptotic value, S ' is a midpoint threshold value, T ' is a slope coefficient, y 12 is the forbidden bandwidth of the carrier gradient graded upper waveguide layer, x 2 is the thickness of the carrier gradient graded upper waveguide layer, wherein N 1 '≤40,0≤N 2 ' is more than or equal to 0 and less than or equal to 30, S ' is more than or equal to 0 and less than or equal to 30,0.00001 and T ' is more than or equal to 0.2; The fitting curve of the electron mobility distribution curve of the waveguide layer under the gradient of the current carrier meets the condition that the Boltzmann function distribution is that y 13 =U 2 +（U 1 -U 2 ）/(1+exp^((x 1 -V)/W)),U 1 is a low-limit asymptotic value, U 2 is a high-limit asymptotic value, V is a midpoint threshold value, W is a slope coefficient, y 13 is the electron mobility of the waveguide layer under the gradient of the current carrier, x 1 is the thickness of the waveguide layer under the gradient of the current carrier, wherein U 1 ≤20000,100≤U 2 is more than or equal to 200 and less than or equal to 10000,0, V is more than or equal to 20,0.00001 and less than or equal to W is less than or equal to 0.2; the fitted curve of the electron mobility distribution curve of the carrier gradient upper waveguide layer meets the condition that Boltzmann function distribution is that y 14 =U 2 '+（U 1 '-U 2 '）/(1+exp^((x 2 -V')/W')),U 1 'is a low-limit asymptotic value, U 2 ' is a high-limit asymptotic value, V 'is a midpoint threshold value, W' is a slope coefficient, y 14 is the electron mobility of the carrier gradient upper waveguide layer, x 2 is the thickness of the carrier gradient upper waveguide layer, wherein U 1 '≤20000,100≤U 2 'is more than or equal to 200 and less than or equal to 100000,0' is more than or equal to 50 'and 0.0001 is more than or equal to W' is more than or equal to 0.2.
  6. 6. The gallium nitride-based semiconductor laser with a graded waveguide layer according to claim 1, wherein the fitted curve of the peak electron drift rate profile of the waveguide layer under the graded waveguide layer satisfies DoseDesp function profile or Boltzmann function profile, and the fitted curve of the peak electron drift rate profile of the waveguide layer over the graded waveguide layer satisfies DoseDesp function profile or Boltzmann function profile.
  7. 7. The gallium nitride-based semiconductor laser with a graded waveguide layer according to claim 6, wherein the fitted curve of the peak electron velocity distribution curve of the graded waveguide layer satisfies DoseDesp that the function distribution is y 9 =M 1 +（M 2 -N 1 ）/(1+10^((Q-x 1 )*R)),M 1 is the baseline dose, M 2 is the saturation dose, Q is the midpoint depth, R is the gradient coefficient, y 9 is the peak electron velocity of the graded waveguide layer, x 1 is the graded waveguide layer thickness, wherein 3E4 is equal to or less than M 1 ≤3E9,3E5≤M 2 is equal to or less than 4E9,0 is equal to or less than Q is equal to or less than 10, -4000 is equal to or less than R is equal to or less than 40; The fitted curve of the peak electron velocity distribution curve of the carrier gradient upper waveguide layer meets the requirement that DoseDesp functions are distributed so that y 10 =M 1 '+（M 2 '-M 1 '）/(1+10^((Q'-x 2 )*R')),M 1 ' is a baseline dose, M 2 ' is a saturation dose, Q ' is a midpoint depth, R ' is a gradient coefficient, y 10 is the peak electron velocity of the carrier gradient upper waveguide layer, x 2 is the thickness of the carrier gradient upper waveguide layer, wherein M 1 '≤3E9,3E5≤M 2 ' is more than or equal to 3E4 and less than or equal to 4E9,0 ' and less than or equal to 10, and R ' is more than or equal to 40 and less than or equal to 40000.
  8. 8. The gallium nitride-based semiconductor laser with a graded waveguide layer according to claim 6, wherein the fitted curve of the peak electron drift rate distribution curve of the graded waveguide layer satisfies the Boltzmann function distribution that y 15 =P 2 +（P 1 -P 2 ）/(1+exp^((x 1 -r)/s)),P 1 is a low-limit asymptotic value, P 2 is a high-limit asymptotic value, r is a midpoint threshold, s is a slope coefficient, y 15 is the peak electron drift rate of the graded waveguide layer, x 1 is the thickness of the graded waveguide layer, wherein 3E5 is equal to or less than P 1 ≤3E9,3E5≤P 2 is equal to or less than 3E9,0 is equal to or less than 20,0.00001 is equal to or less than s is equal to or less than 0.2; The fitted curve of the peak electron drift rate distribution curve of the carrier gradient upper waveguide layer meets the condition that Boltzmann function distribution is that y 16 =P 2 '+（P 1 '-P 2 '）/(1+exp^((x 2 -r')/s')),P 1 ' is a low-limit asymptotic value, P 2 ' is a high-limit asymptotic value, r ' is a midpoint threshold value, s ' is a slope coefficient, y 16 is the peak electron drift rate of the carrier gradient upper waveguide layer, x 2 is the thickness of the carrier gradient upper waveguide layer, and P 1 '≤3E9,3E5≤P 2 ' is more than or equal to 3E5 and less than or equal to 3E9,0 ' and r ' is more than or equal to 20,0.00001 ' and less than or equal to s ' is more than or equal to 0.2.
  9. 9. The gallium nitride-based semiconductor laser with a graded waveguide layer according to claim 6, wherein the interface between the first graded waveguide layer and the second graded waveguide layer forms a forbidden bandwidth variation angle, and the angle is α:60 ° - α is less than or equal to 120 °; The interface of the first carrier gradient upper waveguide layer and the second carrier gradient upper waveguide layer forms a forbidden bandwidth change included angle, and the angle is beta which is more than or equal to 60 degrees and less than or equal to 120 degrees; The interface of the first carrier gradient lower waveguide layer and the second carrier gradient lower waveguide layer forms an electron mobility change included angle, and the angle is gamma, which is more than or equal to 90 degrees and less than or equal to 150 degrees; the interface of the second carrier gradient upper waveguide layer and the second carrier gradient upper waveguide layer forms an electron mobility change included angle, and the angle is theta which is more than or equal to 90 degrees and less than or equal to 150 degrees; The included angle of the peak electron drift rate change of the interface of the first carrier gradient lower waveguide layer and the second carrier gradient lower waveguide layer is rho which is more than or equal to 90 degrees and less than or equal to 150 degrees; And the included angle of the peak electron drift rate change of the interface of the second carrier gradient graded upper waveguide layer and the second carrier gradient graded upper waveguide layer is sigma, and is more than or equal to 90 degrees and less than or equal to 150 degrees.
  10. 10. The gallium nitride-based semiconductor laser with carrier gradient graded waveguide layer according to claim 1, wherein the substrate is a GaN single crystal substrate; The lower waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, and the thickness of the lower waveguide layer is 300 to 8000 Emi; The active layer is an InGaN/GaN quantum well; The upper waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, and the thickness of the upper waveguide layer is 300 to 8000 Emi; The electron blocking layer is any one or any combination of AlGaN, gaN, inGaN, alInGaN, alN and has a thickness of 5 to 800 meter; The upper confinement layer is an AlGaN/AlGaN combination, and the thickness of the upper confinement layer is 500 to 9000 angstroms.

Description

Gallium nitride-based semiconductor laser with carrier gradient graded waveguide layer Technical Field The application relates to the field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser with a carrier gradient waveguide layer. Background The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like compared with other types of lasers. The laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different that the light emitting diode generates radiation composite luminescence by the transition of electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can be excited only by meeting the excitation condition, so that the inversion distribution of carriers in an active area is required to be met, the excited radiation light oscillates back and forth in a resonant cavity, the light is amplified by the propagation in a gain medium, the gain is larger than the loss by meeting the threshold condition, and finally the laser is output. The nitride semiconductor laser has the following problems that after the laser emits stable laser light and is saturated, quasi-fermi energy levels of holes and electrons are pinned, stimulated radiation is dominant, injected carriers are completely converted into photon output, carrier concentration reaches saturation, optical gain reaches saturation, junction voltage also reaches saturation, and carrier concentration in a cavity does not change along with current. The laser is far away from symmetry break corresponding to equilibrium phase transition, so that discontinuous or abrupt change phenomenon of the laser occurs at the threshold, such as problems of conductivity jump, capacitance dip, junction voltage jump, series resistance dip, ideal factor jump and the like. The discontinuity is mainly affected by factors such as trapping effect, surface condition, edge effect, deep level trap, insulating interface layer and series resistance of the depletion region. When electrons leak to the p-type semiconductor, a bipolar conductivity effect is formed, and when the carrier concentration of the active layer is saturated, the junction voltage at the threshold value is saturated, but the series resistance is increased, and the total voltage of the laser rises. Disclosure of Invention In order to solve one of the technical problems, the invention provides a gallium nitride-based semiconductor laser with a carrier gradient graded waveguide layer. The embodiment of the invention provides a gallium nitride-based semiconductor laser with a carrier gradient graded waveguide layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer, an upper limiting layer and a contact layer which are sequentially arranged from bottom to top, wherein the lower waveguide layer is a carrier gradient graded lower waveguide layer, the upper waveguide layer is a carrier gradient graded upper waveguide layer, the carrier gradient graded lower waveguide layer comprises a first carrier gradient graded lower waveguide layer and a second carrier gradient graded lower waveguide layer, the first carrier gradient graded lower waveguide layer is positioned below the second carrier gradient graded lower waveguide layer, the carrier gradient graded upper waveguide layer comprises a first carrier gradient graded upper waveguide layer and a