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CN-121983852-A - Gallium nitride-based semiconductor laser with graded dielectric constant waveguide layer

CN121983852ACN 121983852 ACN121983852 ACN 121983852ACN-121983852-A

Abstract

The invention provides a gallium nitride-based semiconductor laser with a graded dielectric constant waveguide layer, wherein a lower waveguide layer and an upper waveguide layer are respectively a graded dielectric constant lower waveguide layer and a graded dielectric constant upper waveguide layer, and the fitting curve of In ion intensity distribution or In atomic concentration distribution, the fitting curve of covalent bond energy distribution and the fitting curve of dielectric constant distribution of SIMS test of the graded dielectric constant upper waveguide layer all meet any one function distribution of ExpDecay, expDecay, expDecay3 and SGompertz. SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer under the gradient dielectric constant is fit to Slogistic function distribution, covalent bond energy distribution of the waveguide layer under the gradient dielectric constant is fit to Boltzmann function, and dielectric constant distribution of the waveguide layer under the gradient dielectric constant is fit to Boltzmann function. The invention can regulate and control the light field limiting factor of the laser waveguide layer and improve the performance of the laser.

Inventors

  • ZHENG JINJIAN
  • LI XIAOQIN
  • HU ZHIYONG
  • ZHANG HUIKANG
  • CAO JUN
  • ZHANG JIANGYONG
  • DENG HEQING
  • LIU ZIHAN
  • XUN FEILIN
  • CHEN WANJUN
  • CAI XIN
  • ZHONG ZHIBAI
  • YANG LIXUN
  • LAN JIABIN

Assignees

  • 安徽格恩半导体有限公司

Dates

Publication Date
20260505
Application Date
20260130

Claims (10)

  1. 1. The gallium nitride-based semiconductor laser with the graded dielectric constant waveguide layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the upper waveguide layer is a graded dielectric constant upper waveguide layer, and the lower waveguide layer is a graded dielectric constant lower waveguide layer; the SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer on the graded dielectric constant satisfies any one of function distribution ExpDecay, expDecay, expDecay3, SGompertz; The fitted curve of the covalent bond energy distribution of the waveguide layer on the graded dielectric constant meets any one of the function distributions ExpDecay, expDecay, expDecay, SGompertz; The fitted curve of the dielectric constant distribution of the waveguide layer on the graded dielectric constant meets any one of the function distributions ExpDecay, expDecay, expDecay, SGompertz; The SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer under the graded dielectric constant meets Slogistic function distribution; The fitted curve of the covalent bond energy distribution of the waveguide layer under the gradual dielectric constant meets the Boltzmann function distribution; The fitted curve of the dielectric constant distribution of the waveguide layer under the gradual dielectric constant meets the Boltzmann function distribution.
  2. 2. The gallium nitride-based semiconductor laser having a graded dielectric constant waveguide layer according to claim 1, wherein the SIMS test In ion intensity distribution or In atomic concentration distribution of the graded dielectric constant upper waveguide layer satisfies ExpDecay a function distribution y 1 =B+A*exp(-(x 1 -C)/D), B is a steady state value or background value, a is an initial amplitude, C is an offset, D is a characteristic decay constant, y 1 is the SIMS test In ion intensity distribution or In atomic concentration distribution of the graded dielectric constant upper waveguide layer, x 1 is the thickness of the graded dielectric constant upper waveguide layer, wherein 2E17 ∈b ∈2e26, -9E26 ∈a ∈0,2 ∈c ∈ 20000,10 ∈d ∈10000.
  3. 3. The gallium nitride-based semiconductor laser having a graded dielectric constant waveguide layer according to claim 1, wherein the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on the graded dielectric constant satisfies ExpDecay a function distribution y 2 =E+F*exp(-(x 1 -G)/H)+J*exp(-(x 1 -K)/L), E is a steady state value or background value, F is a first attenuation term amplitude, G is a first attenuation term offset, D is a first attenuation constant, J is a second attenuation term amplitude, K is a second attenuation term offset, L is a second attenuation constant, y 2 is a SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on the graded dielectric constant, x 1 is a thickness of the waveguide layer on the graded dielectric constant, wherein 2E 17≤2e26, -9E 26≤f 0,80≤g 80000,500≤h 1000000, -9E 26≤ 0,80.k 80000,500≤l 1000000.
  4. 4. The gallium nitride-based semiconductor laser with graded dielectric constant waveguide layer according to claim 1, wherein the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on graded dielectric constant satisfies ExpDecay a function distribution y 3 =M+N*exp(-(x 1 -P)/Q)+R*exp(-(x 1 -S)/T)+ U*exp(-(x 1 -V)/W), M is a steady state value or background value, N is a first attenuation term amplitude, P is a first attenuation term offset, Q is a first attenuation constant, R is a second attenuation term amplitude, S is a second attenuation term offset, T is a second attenuation constant, U is a third attenuation term amplitude, V is a third attenuation term offset, W is a third attenuation constant, y 3 is a SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on graded dielectric constant, x 1 is a thickness of the waveguide layer on graded dielectric constant, wherein ：3E17≤M≤3E26,-8E26≤N≤0,0.8≤P≤8000,0.2≤Q≤2000,-8E26≤R≤0,0.8≤S≤8000,0.2≤T≤2000,-8E26≤U≤0,0.8≤V≤8000,0.2≤W≤2000.
  5. 5. The gallium nitride-based semiconductor laser according to claim 1, wherein the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on graded dielectric constant satisfies SGompertz function distribution y 4 =a*exp(-exp(-k*(x 1 -b)), a is a saturation value, k is a growth rate constant, b is an inflection point position parameter, y 4 is the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on graded dielectric constant, x 1 is the thickness of the waveguide layer on graded dielectric constant, wherein 6E15 is equal to or greater than a is equal to or less than 6E25,0.8 is equal to or less than 800,0.008 is equal to or less than 800.
  6. 6. The gallium nitride-based semiconductor laser having a graded dielectric constant waveguide layer according to claim 1, wherein the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer under the graded dielectric constant satisfies Slogistic a function distribution of y 5 =p/(1+exp(-q*(x 2 -r)), p is a saturation value (asymptotically upper limit), q is a growth rate constant, r is an inflection point position parameter, y 5 is the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer under the graded dielectric constant, x 2 is the thickness of the waveguide layer under the graded dielectric constant, wherein 2E15 is equal to or less than 2E25, -20000 is equal to or less than 0,0.001 is equal to or less than 100.
  7. 7. The gallium nitride-based semiconductor laser with graded dielectric constant waveguide layer according to claim 1, wherein the fitted curve of the covalent bond energy distribution of the waveguide layer on graded dielectric constant satisfies ExpDecay a function distribution of y 6 =c+d*exp(-(x 1 -f)/g, c is a steady state or background value, d is an initial amplitude, f is an offset, g is a characteristic decay constant, y 6 is the covalent bond energy of the waveguide layer on graded dielectric constant, x is the thickness of the waveguide layer on graded dielectric constant, wherein-4000 c≤ 0,0.02≤d≤ 2000,15≤f 15000,15≤g15000; The fitted curve of the covalent bond energy distribution of the waveguide layer under the gradient dielectric constant satisfies the condition that Boltzmann function distribution is y 7 =s 2 +(s 1 -s 2 )/(1+exp((x 2 -t)/u)),s 1 and is a high steady state value, s 2 is a low steady state value, t is a transition midpoint parameter, u is a transition rate parameter, y 7 is the covalent bond energy of the waveguide layer on the gradient dielectric constant, x 2 is the thickness of the waveguide layer on the gradient dielectric constant, wherein s 2 ≤2000,0.02≤s 1 is more than or equal to 0.02 and less than or equal to 2000,0.01, t is more than or equal to 1000,8E-8 and u is more than or equal to 800.
  8. 8. The gallium nitride-based semiconductor laser with graded dielectric constant waveguide layer according to claim 1, wherein the fitted curve of the dielectric constant distribution of the waveguide layer on the graded dielectric constant satisfies ExpDecay a function distribution of y 8 =h+j*exp(-(x 1 -m)/n, h is a steady state value or a background value, j is an initial amplitude, m is an offset, n is a characteristic attenuation constant, y 8 is the dielectric constant of the waveguide layer on the graded dielectric constant, x 1 is the thickness of the waveguide layer on the graded dielectric constant, wherein 2≤h≤20000, -8000≤j≤0, 15≤m 15000,15≤n≤15000; The fitted curve of the dielectric constant distribution of the waveguide layer under the gradual change dielectric constant satisfies the condition that the Boltzmann function distribution is y 9 =v 2 +(v 1 -v 2 )/(1+exp((x 2 -w)/i)),v 1 and is a high steady state value, v 2 is a low steady state value, w is a transition midpoint parameter, i is a transition rate parameter, y 9 is the dielectric constant of the waveguide layer on the gradual change dielectric constant, and x is the thickness of the waveguide layer on the gradual change dielectric constant, wherein v 2 ≤9000,0.08≤v 1 is more than or equal to 0.09 and less than or equal to 8000,0.01, w is more than or equal to 1000,8E-8 and less than or equal to i is less than or equal to 800.
  9. 9. The gallium nitride-based semiconductor laser having a graded dielectric constant waveguide layer according to claim 1, wherein the graded dielectric constant lower waveguide layer includes a first graded dielectric constant lower waveguide layer and a second graded dielectric constant lower waveguide layer, an interface of the first graded dielectric constant lower waveguide layer and the second graded dielectric constant lower waveguide layer forms a covalent bond energy change trend angle γ of 60 ° or less and 120 °, the second dielectric constant lower waveguide layer forms a covalent bond energy change trend angle β of 0 ° or less and 60 ° with the active layer, and the graded dielectric constant upper waveguide layer forms a covalent bond energy change trend angle α of 15 ° or less and 85 ° or less with the active layer, and satisfies that 0 ° or less and β≤γ≤120°; the interface of the first graded dielectric constant lower waveguide layer and the second graded dielectric constant lower waveguide layer forms a dielectric constant change trend included angle rho which is more than or equal to 60 degrees and less than or equal to 120 degrees, the second dielectric constant lower waveguide layer and the active layer form a dielectric constant change trend included angle sigma which is more than or equal to 0 degree and less than or equal to 60 degrees, the graded dielectric constant upper waveguide layer and the active layer form a dielectric constant change trend included angle theta which is more than or equal to 15 degrees and less than or equal to 85 degrees, and the condition that the dielectric constant change trend included angle phi is more than or equal to 0 degree and less than or equal to 1 degree and less than or equal to 120 degrees is satisfied.
  10. 10. The gallium nitride-based semiconductor laser having a graded dielectric constant waveguide layer according to claim 1, wherein the substrate is a GaN single crystal substrate; the lower waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, and the thickness of the lower waveguide layer is 300 to 8000 Emi; The active layer is an InGaN/GaN quantum well; the upper waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, and the thickness of the upper waveguide layer is 300 to 8000 Emi; the electron blocking layer is any one or any combination of AlGaN, gaN, inGaN, alInGaN, alN and has a thickness of 5 to 800 meter; The upper limiting layer is any one or any combination of AlGaN, alN, gaN, alInN, alInGaN, and the thickness of the upper limiting layer is 500 to 9000 meters; The lower limiting layer is any one or any combination of AlGaN, gaN, alN, inGaN, alInGaN, alInN, and the thickness of the lower limiting layer is 5000-50000A.

Description

Gallium nitride-based semiconductor laser with graded dielectric constant waveguide layer Technical Field The application relates to the field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser with a graded dielectric constant waveguide layer. Background The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like compared with other types of lasers. The laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different that the light emitting diode generates radiation composite luminescence by the transition of electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can be excited only by meeting the excitation condition, so that the inversion distribution of carriers in an active area is required to be met, the excited radiation light oscillates back and forth in a resonant cavity, the light is amplified by the propagation in a gain medium, the gain is larger than the loss by meeting the threshold condition, and finally the laser is output. The nitride semiconductor laser has the following problems that refractive index dispersion of the laser, fluctuation of high-concentration carrier concentration influences refractive index of an active layer, a limiting factor is reduced along with increase of wavelength, mode gain of the laser is reduced, a light field is dissipated, a light field mode leaks to a substrate to form standing waves, substrate mode suppression efficiency is low, and far-field image FFP quality is poor. Disclosure of Invention In order to solve one of the above technical problems, the present invention provides a gallium nitride-based semiconductor laser having a graded dielectric constant waveguide layer. The embodiment of the invention provides a gallium nitride-based semiconductor laser with a graded dielectric constant waveguide layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer is an upper waveguide layer with the graded dielectric constant, and the lower waveguide layer is a lower waveguide layer with the graded dielectric constant; the SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer on the graded dielectric constant satisfies any one of function distribution ExpDecay, expDecay, expDecay3, SGompertz; The fitted curve of the covalent bond energy distribution of the waveguide layer on the graded dielectric constant meets any one of the function distributions ExpDecay, expDecay, expDecay, SGompertz; The fitted curve of the dielectric constant distribution of the waveguide layer on the graded dielectric constant meets any one of the function distributions ExpDecay, expDecay, expDecay, SGompertz; The SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer under the graded dielectric constant meets Slogistic function distribution; The fitted curve of the covalent bond energy distribution of the waveguide layer under the gradual dielectric constant meets the Boltzmann function distribution; The fitted curve of the dielectric constant distribution of the waveguide layer under the gradual dielectric constant meets the Boltzmann function distribution. Preferably