CN-121983853-A - Gallium nitride-based semiconductor laser with graded radiation composite coefficient waveguide layer

CN121983853ACN 121983853 ACN121983853 ACN 121983853ACN-121983853-A

Abstract

The invention provides a gallium nitride-based semiconductor laser with a graded-radiation composite-coefficient waveguide layer, wherein a lower waveguide layer and an upper waveguide layer are respectively a graded-radiation composite-coefficient lower waveguide layer and a graded-radiation composite-coefficient upper waveguide layer, and a fitting curve of In ion intensity distribution or In atomic concentration distribution and a fitting curve of radiation composite-coefficient distribution of SIMS test of the graded-radiation composite-coefficient upper waveguide layer both meet any one function distribution of GaussAmp, invsPoly, hill. SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer under gradual change radiation recombination coefficient and radiation recombination coefficient fitting curve both meet BiDoseResp function distribution. The invention effectively localizes the carrier, the quantum composite and the optical field, improves the gain of the laser, effectively localizes the carrier and the optical field in an active layer (quantum well), simultaneously inhibits the non-radiative composite and absorption loss of a waveguide area, and further improves the threshold current, the slope efficiency and the reliability.

Inventors

ZHENG JINJIAN
LAN JIABIN
HU ZHIYONG
ZHANG HUIKANG
ZHANG JIANGYONG
DENG HEQING
LIU ZIHAN
XUN FEILIN
YANG LIXUN
CHEN WANJUN
ZHONG ZHIBAI
CAI XIN
LI XIAOQIN

Assignees

安徽格恩半导体有限公司

Dates

Publication Date: 20260505
Application Date: 20260130

Claims (10)

1. The gallium nitride-based semiconductor laser with the graded-radiation composite-coefficient waveguide layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the upper waveguide layer is a graded-radiation composite-coefficient upper waveguide layer, and the lower waveguide layer is a graded-radiation composite-coefficient lower waveguide layer; the SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer on the graded radiation composite coefficient meets any one function distribution of GaussAmp, invsPoly, hill; The fitting curve of the radiation recombination coefficient distribution of the waveguide layer on the gradual change radiation recombination coefficient meets any one function distribution of GaussAmp, invsPoly, hill; SIMS test In ion intensity distribution or fitting curve of In atomic concentration distribution of the waveguide layer under the gradual change radiation recombination coefficient meets BiDoseResp function distribution; And the fitting curve of the radiation recombination coefficient distribution of the waveguide layer under the gradual change radiation recombination coefficient meets BiDoseResp function distribution.
2. The gallium nitride-based semiconductor laser with graded-radiation-recombination-coefficient waveguide layer according to claim 1, wherein the SIMS-test In ion intensity distribution or In-atom concentration distribution of the waveguide layer on the graded-radiation-recombination-coefficient fitting curve satisfies GaussAmp function distribution y 1 =B+A*exp((-0.5*(x 1 -C)/D) 2), B is a base line value, a is a peak amplitude, i.e., maximum height of a gaussian peak, C is a peak center position, i.e., symmetry center of the gaussian peak, D is a broadening parameter, y 1 is the SIMS-test In ion intensity distribution or In-atom concentration distribution of the waveguide layer on the graded-radiation-recombination-coefficient, x 1 is thickness of the waveguide layer on the graded-radiation-recombination-coefficient, wherein-3E 25 is 0≤b≤8E 15 is 8E26,0.022 is C is 2000,0.007≤d 7000.
3. The gallium nitride-based semiconductor laser having graded-radiation-recombination-coefficient waveguide layer according to claim 1, wherein the SIMS-test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on the graded-radiation-recombination-coefficient satisfies InvsPoly function distribution y 2 =E+F/(1+F 1 *(2*(x 1 -G)/H)^2+F 2 *(2*(x 1 -G)/H)^4+F 3 *(2*(x 1 -G)/H)^6),E as a base line value, F as a peak amplitude, i.e., maximum height of the peak, G as a peak center position, i.e., symmetry center of the curve, H as a peak width parameter, F 1 、F 2 、F 3 as a polynomial coefficient, y 2 as SIMS-test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on the graded-radiation-recombination-coefficient, x 1 as thickness of the waveguide layer on the graded-radiation-recombination-coefficient, wherein ：-1E25≤E≤0, 6E15≤F≤6E26,0.001≤G≤1000,0.006≤H≤6000,0.002≤F 1 ≤2000,-20≤F 2 ≤20,0.009≤F 3 ≤9000.
4. The gallium nitride-based semiconductor laser with graded-radiation-recombination-coefficient waveguide layer according to claim 1, wherein the SIMS-test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on the graded-radiation-recombination-coefficient fitting curve satisfies Hill function distribution y 3 =J*x 1 ^N/(K^N+x 1 N), J is a saturation response value, N is a synergistic coefficient, K is a half-saturation constant, y 3 is the SIMS-test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on the graded-radiation-recombination-coefficient, x 1 is the thickness of the waveguide layer on the graded-radiation-recombination-coefficient, wherein 4E15 is equal to or greater than J is equal to or less than 4E25,0 is equal to or less than 1500,0.0008 is equal to or less than 800.
5. The gallium nitride-based semiconductor laser with graded-radiation-recombination-coefficient waveguide layer according to claim 1, wherein the fitted curve of the radiation recombination-coefficient distribution of the waveguide layer on the graded-radiation-recombination-coefficient satisfies GaussAmp function (gaussian amplitude function) distribution y 4 =L+M*exp((-0.5*(x 1 -P)/Q) 2), L is a base line value, M is a peak amplitude, maximum height of the gaussian peak, P is a peak center position, i.e., symmetry center of the gaussian peak, Q is a broadening parameter, y 4 is the radiation recombination coefficient of the waveguide layer on the graded-radiation-recombination-coefficient, x 1 is thickness of the waveguide layer on the graded-radiation-recombination-coefficient, wherein 4E-20≤l-4E-5,2E-20≤m≤2e-10,0.002≤p. 2000,0.006≤q.6000.
6. The gan-based semiconductor laser with graded-radiation-recombination-coefficient waveguide layer as defined in claim 1, wherein the fitted curve of the radiation-recombination-coefficient distribution of the waveguide layer on the graded-radiation-recombination-coefficient satisfies InvsPoly function distribution y 5 =W+R/(1+R 1 *(2*(x 1 -S)/T)^2+R 2 *(2*(x 1 -S)/T)^4+R 3 *(2*(x 1 -S)/T)^6),O as a base line value, R as peak amplitude, maximum height of peak, S as peak center position, symmetry center of curve, T as peak width parameter, R 1 、R 2 、R 3 as polynomial coefficient, y 5 as radiation-recombination-coefficient of the waveguide layer on the graded-radiation-recombination-coefficient, x 1 as thickness of the waveguide layer on the graded-radiation-recombination-coefficient, wherein ：4E-20≤W≤4E-5,1E-22≤R≤1E-2,0.0001≤S≤1000,0.0005≤T≤5000,0.002≤R 1 ≤2000,-20≤R 2 ≤20,0.009≤R 3 ≤9000.
7. The gallium nitride-based semiconductor laser with graded-radiation-recombination-coefficient waveguide layer according to claim 1, wherein the fitted curve of the radiation recombination coefficient distribution of the waveguide layer on the graded-radiation-recombination-coefficient satisfies Hill function distribution y 6 =U*x 1 ^V/(W^V+x 1 ≡v), U is a saturation response value, V is a synergistic coefficient, W is a semi-saturation constant, y 6 is the radiation recombination coefficient of the waveguide layer on the graded-radiation-recombination-coefficient, x 1 is the thickness of the waveguide layer on the graded-radiation-recombination-coefficient, wherein 8E-20 ≡u ≡8E-2, 0.000008 ≡v ≡800, 1E4 ≡w≤1E 24.
8. The gallium nitride-based semiconductor laser having graded-radiation-recombination-coefficient waveguide layer according to claim 1, wherein the SIMS-test In ion intensity distribution or In atomic concentration distribution of the waveguide layer under graded-radiation-recombination-coefficient fitting curve satisfies BiDoseResp function distribution y 7 =a 1 +s 1 *p/(1+pow(10,(d 1 -x 2 )*h 1 ))+s 2 *(1-p)(1+pow(10,(d 2 -x 2 )*h 2 )),a 1 as a baseline background value, s 1 as a branch 1 maximum-response amplitude, p as a branch 1 weight coefficient, d 1 as a branch 1 half-effect dose, h 1 as a branch 1-response slope factor, s 2 as a branch 2 maximum-response amplitude, d 2 as a branch 2 half-effect dose, h 2 as a branch 2-response slope factor, y 7 as a SIMS-test In ion intensity distribution or In atomic concentration distribution of the waveguide layer under graded-radiation-recombination-coefficient, x 2 as a thickness of the waveguide layer under graded-radiation-recombination-coefficient, wherein ：-3E25≤a 1 ≤0,0.00001≤d 1 ≤1000,-1000≤d 2 ≤0,2E15≤s 1 ≤2E25,2E15≤s 2 ≤2E25,0.0009≤p≤9000,-50000≤h 1 ≤0,0≤h 2 ≤80000; The fitted curve of the radiation complex coefficient distribution of the waveguide layer under the gradient radiation complex coefficient satisfies BiDoseResp that the function distribution is y 8 =b 1 +f 1 *p/(1+pow(10,(g 1 -x 2 )*k 1 ))+f 2 *(1-p)(1+pow(10,(g 2 -x 2 )*k 2 )),b 1 as a baseline background value, f 1 is the maximum response amplitude of the branch 1, p is the weight coefficient of the branch 1, g 1 is the half-effect dose of the branch 1, k 1 is the response slope factor of the branch 1, f 2 is the maximum response amplitude of the branch 2, g 2 is the half-effect dose of the branch 2, k 2 is the response slope factor of the branch 2, y 7 is the radiation complex coefficient of the waveguide layer under the gradient radiation complex coefficient, x 2 is the thickness of the waveguide layer under the gradient radiation complex coefficient, wherein ：-4E25≤b 1 ≤0,9E-23≤f 1 ≤9E-3,0.0009≤p≤900,0.0002≤g 1 ≤200,-50000≤k 1 ≤0,9E-23≤f 2 ≤9E-3,-2E19≤g 2 ≤0,0≤k≤80000.
9. The gallium nitride-based semiconductor laser having graded-radiation-recombination-coefficient waveguide layers according to claim 1, wherein the graded-radiation-recombination-coefficient lower waveguide layer includes a first graded-radiation-recombination-coefficient lower waveguide layer and a second graded-radiation-recombination-coefficient lower waveguide layer, an interface of the first graded-radiation-recombination-coefficient lower waveguide layer and the second graded-radiation-recombination-coefficient lower waveguide layer forms a radiation-recombination-coefficient variation trend angle γ of 60 ° or less and 120 °, a radiation-recombination-coefficient variation trend angle formed by the second graded-radiation-recombination-coefficient lower waveguide layer and the active layer is β of 0 ° or less and 60 °, and a radiation-recombination-coefficient variation trend angle formed by the graded-radiation-recombination-coefficient upper waveguide layer and the active layer is α of 15 ° or less and 85 °, and satisfies that β is 0 ° or less and α is less and 120 °.
10. The gallium nitride-based semiconductor laser having a graded-radiation-recombination-coefficient waveguide layer according to claim 1, wherein the substrate is a GaN single-crystal substrate; the lower waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, and the thickness of the lower waveguide layer is 300 to 8000 Emi; The active layer is an InGaN/GaN quantum well; the upper waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, and the thickness of the upper waveguide layer is 300 to 8000 Emi; the electron blocking layer is any one or any combination of AlGaN, gaN, inGaN, alInGaN, alN and has a thickness of 5 to 800 meter; The upper limiting layer is any one or any combination of AlGaN, alN, gaN, alInN, alInGaN, and the thickness of the upper limiting layer is 500 to 9000 meters; The lower limiting layer is any one or any combination of AlGaN, gaN, alN, inGaN, alInGaN, alInN, and the thickness of the lower limiting layer is 5000-50000A.

Description

Gallium nitride-based semiconductor laser with graded radiation composite coefficient waveguide layer Technical Field The application relates to the field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser with a graded radiation composite coefficient waveguide layer. Background The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like compared with other types of lasers. The laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different that the light emitting diode generates radiation composite luminescence by the transition of electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can be excited only by meeting the excitation condition, so that the inversion distribution of carriers in an active area is required to be met, the excited radiation light oscillates back and forth in a resonant cavity, the light is amplified by the propagation in a gain medium, the gain is larger than the loss by meeting the threshold condition, and finally the laser is output. The nitride semiconductor laser has the following problems that the light absorption loss in the laser comprises impurity absorption loss, carrier absorption loss, waveguide structure side wall scattering loss, quantum well absorption loss and the like, the light waveguide impurity absorption loss is high, intrinsic carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low (less than 10 percent), a large amount of unionized Mg acceptors impurities (more than 90 percent) generate self-compensating effect and cause the increase of internal optical loss, so that the slope efficiency of the laser is reduced and the threshold current is increased. The lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, a strong QCSE quantum confinement Stark effect is generated, the energy band of a quantum well is inclined, the valence band difference of a laser is increased, hole injection is inhibited, holes are more difficult to transport in the quantum well, carrier injection is uneven, the overlapping probability of an electron-hole wave function is reduced, so that uneven gain of the laser is caused, the radiation recombination efficiency is reduced, and the improvement of the electric lasing gain of the laser is limited. Disclosure of Invention In order to solve one of the technical problems, the invention provides a gallium nitride-based semiconductor laser with a graded radiation composite coefficient waveguide layer. The embodiment of the invention provides a gallium nitride-based semiconductor laser with a graded-radiation composite-coefficient waveguide layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer is an upper waveguide layer with a graded-radiation composite coefficient, and the lower waveguide layer is a lower waveguide layer with a graded-radiation composite coefficient; the SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer on the graded radiation composite coefficient meets any one function distribution of GaussAmp, invsPoly