CN-121983854-A - Gallium nitride-based semiconductor laser with graded Phillips ionization degree waveguide layer

CN121983854ACN 121983854 ACN121983854 ACN 121983854ACN-121983854-A

Abstract

The invention provides a gallium nitride-based semiconductor laser with a graded Philips ionization degree waveguide layer, which comprises a fitting curve of In ion intensity distribution or In atom concentration distribution, a fitting curve of separation energy distribution and a fitting curve of Philips ionization degree distribution, wherein the fitting curve of Philips ionization degree distribution all meets LogNormal or Extreme function distribution, continuous energy band gradient is constructed through continuous gradual change of chemical bond ionization and covalence, smooth transition of polarization electric fields of the waveguide layer and an active layer and inhibition of interface defects are realized, continuous ionization and covalence gradient is realized through gradual change of Philips ionization degree, philips ionization degree mutation of a heterogeneous interface is eliminated, blue shift is reduced by counteracting a longitudinal built-In electric field, overlapping rate of an electron hole wave function is improved, carrier escape is reduced, internal quantum efficiency of the laser is improved, and interface defects caused by Philips ionization degree breakthrough are inhibited.

Inventors

ZHENG JINJIAN
LAN JIABIN
CHEN CHENGJIE
ZHANG JIANGYONG
XUN FEILIN
DENG HEQING
YANG LIXUN
ZHONG ZHIBAI
LIU ZIHAN
CAI XIN
CHEN WANJUN
LI XIAOQIN

Assignees

安徽格恩半导体有限公司

Dates

Publication Date: 20260505
Application Date: 20260209

Claims (10)

1. The gallium nitride-based semiconductor laser with the graded Phillips ionization degree waveguide layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the upper waveguide layer is the graded Phillips ionization degree upper waveguide layer, and the lower waveguide layer is the graded Phillips ionization degree lower waveguide layer; the SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer on the gradient Philips ionization degree, the separation energy distribution fitting curve and the Philips ionization degree distribution fitting curve all meet LogNormal or extremum function distribution; The SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer under the gradient Philips ionization degree, the separation energy distribution fitting curve and the Philips ionization degree distribution fitting curve all meet LogNormal or the Extreme function distribution.
2. The gallium nitride-based semiconductor laser with graded philips ionization waveguide layer according to claim 1, wherein when the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on graded philips ionization satisfies LogNormal function distribution, the LogNormal function is y 1 =B+A/(sqrt(2*π)*C*x 1 )*exp(-(ln(x 1 /D)) -2/(2 x C2)), B is a baseline parameter, a is a magnitude factor determining the height of a log-normal peak, C is a broadening program describing the distribution on logarithmic standard deviation, D is a scale factor, i.e., a self-variable value corresponding to a mode position description function peak, y 1 is the SIMS test In ion intensity or In atomic concentration of the waveguide layer on graded philips ionization, x 1 is the thickness of the waveguide layer on graded philips ionization, wherein 5E 15-5E 26, -2E 26-a 0,0.004-4000,0.003-D3000.
3. The gallium nitride-based semiconductor laser with graded Phillips ionization degree waveguide layer according to claim 1, wherein when the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on graded Phillips ionization degree satisfies the distribution of an extremum function, the extremum function is y 2 =E+F*exp(-exp(-((x 1 -G))/H)-((x 1 -G)/H) +1), E is a baseline parameter, F is a height of a log-normal peak determined by an amplitude factor, G is a self-variable value corresponding to a peak of a position parameter description function, H is a stretching degree of a scale parameter description curve, y 2 is an In ion intensity or In atomic concentration of the SIMS test In the waveguide layer on graded Phillips ionization degree, x 1 is a thickness of the waveguide layer on graded Phillips ionization degree, wherein E is-1E 26≤E≤ 0,6E15≤ 6E30,0.008.G≤ 8000,0.003≤H≤3000.
4. The gallium nitride-based semiconductor laser with graded Phillips ionization degree waveguide layer according to claim 1, wherein when the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer under graded Phillips ionization degree satisfies LogNormal function distribution, the LogNormal function is y 3 =J+K/(sqrt(2*π)*L*x 2 )*exp(-(ln(x 2 /M)) -2/(2 x L2)), J is a baseline parameter, K is a magnitude factor determining the height of a log normal peak, L is a broadening program describing distribution of logarithmic standard deviation, M is a scale factor, i.e., a self-variable value corresponding to a mode position description function peak, y 3 is the SIMS test In ion intensity or In atomic concentration of the waveguide layer under graded Phillips ionization degree, x 2 is the thickness of the waveguide layer under graded Phillips ionization degree, wherein-7E 26-0,1E15 is not less than K-1E30,0.002 is not more than 2000,0.006-6000.
5. The gallium nitride-based semiconductor laser with graded philips ionization degree waveguide layer according to claim 1, wherein when the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer under graded philips ionization degree satisfies an extremum function distribution, the extremum function is y 4 =N+P*exp(-exp(-((x 2 -Q))/R)-((x 2 -Q)/R) +1), N is a baseline parameter, P is a height of a log-normal peak determined by an amplitude factor, Q is a self-variable value corresponding to a peak of a position parameter description function, R is a degree of broadening of a scale parameter description curve, y 4 is a SIMS test In ion intensity or In atomic concentration of the waveguide layer under graded philips ionization degree, x 2 is a thickness of the waveguide layer under graded philips ionization degree, wherein 9E15 is ∈9E30, -1E30 is ∈p 0,0.002 is ∈q 2000,0.003 is ∈3000.
6. The gallium nitride-based semiconductor laser with graded Phillips ionization degree waveguide layer according to claim 1, wherein when the fitted curve of the separation energy distribution of the waveguide layer on graded Phillips ionization degree satisfies LogNormal function distribution, the LogNormal function is y 5 =S+T/(sqrt(2*π)*U*x 1 )*exp(-(ln(x 1 /V))2/(2 x U2)), S is a baseline parameter, T is an amplitude factor determining the height of a lognormal peak, U is a broadening program of logarithmic standard deviation description distribution, V is a scale factor, i.e., a self-variable value corresponding to a mode position description function peak, y 5 is the separation energy of the waveguide layer on graded Phillips ionization degree, x 1 is the thickness of the waveguide layer on graded Phillips ionization degree, wherein S≤ 800,0.02 is more than or equal to 0.08 and is less than or equal to T200,0.004 is less than or equal to 400,0.004 and is less than or equal to 400.
7. The gallium nitride-based semiconductor laser with graded Phillips ionization degree waveguide layer according to claim 1, wherein when the fitted curve of the separation energy distribution of the waveguide layer under graded Phillips ionization degree satisfies LogNormal function distribution, the LogNormal function is y 6 =W+a/(sqrt(2*π)*b*x 2 )*exp(-(ln(x 2 /c))2/(2 x b 2)), W is a baseline parameter, a is a amplitude factor to determine the height of a lognormal peak, b is a broadening program of the logarithmic standard deviation description distribution, c is a scale factor, i.e., a self-variable value corresponding to the peak value of the mode position description function, y 6 is the separation energy of the waveguide layer under graded Phillips ionization degree, x 2 is the thickness of the waveguide layer under graded Phillips ionization degree, wherein 0.08≤800, -90≤a≤ 90,0.002≤b≤ 200,0.006≤600.
8. The gallium nitride-based semiconductor laser with graded philips ionization waveguide layer according to claim 1, wherein when the fit curve of philips ionization profile of the waveguide layer on graded philips ionization satisfies LogNormal function profile, the LogNormal function is y 7 =d+f/(sqrt(2*π)*g*x 1 )*exp(-(ln(x 1 /h)) -2/(2 x g 2)), d is a baseline parameter, f is a magnitude factor determining the height of a log normal peak, g is a broadening program describing the profile for a log standard deviation, h is a scale factor, i.e., a self-variable value corresponding to a mode position description function peak, y 7 is philips ionization of the waveguide layer on graded philips ionization, x 1 is the thickness of the waveguide layer on graded philips ionization, wherein 0.05-d 500, -20-200,0.004-g 400,0.003-h 300.
9. The gallium nitride-based semiconductor laser with graded philips ionization waveguide layer according to claim 1, wherein when the fit curve of philips ionization profile of the waveguide layer under graded philips ionization satisfies LogNormal function profile, the LogNormal function is y 8 =j+k/(sqrt(2*π)*m*x 2 )*exp(-(ln(x 2 /n)) -2/(2 x m 2)), j is a baseline parameter (background baseline of response), k is an amplitude factor determining the height of lognormal peak, m is a broadening program describing the distribution for logarithmic standard deviation, n is a scale factor, i.e. a self-variable value corresponding to a mode position description function peak, y 8 is philips ionization degree of the waveguide layer under graded philips ionization degree, x 2 is philips ionization degree of the waveguide layer thickness under graded philips ionization degree, where 0.05-500,0-k-60,0.002-m 200,0.006-n-600.
10. The gallium nitride-based semiconductor laser having a graded philips ionization waveguide layer according to claim 1, wherein the graded philips ionization upper waveguide layer separation energy profile and the graded philips ionization lower waveguide layer separation energy profile form a V-shaped graded profile separation energy; The Phillips ionization degree distribution of the waveguide layer on the gradient Phillips ionization degree and the Phillips ionization degree distribution of the waveguide layer under the gradient Phillips ionization degree form inverse V-shaped gradient Phillips ionization degree.

Description

Gallium nitride-based semiconductor laser with graded Phillips ionization degree waveguide layer Technical Field The application relates to the field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser with a waveguide layer with graded Phillips ionization degree. Background The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like compared with other types of lasers. The laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different that the light emitting diode generates radiation composite luminescence by the transition of electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can be excited only by meeting the excitation condition, so that the inversion distribution of carriers in an active area is required to be met, the excited radiation light oscillates back and forth in a resonant cavity, the light is amplified by the propagation in a gain medium, the gain is larger than the loss by meeting the threshold condition, and finally the laser is output. The nitride semiconductor laser has the following problems that a quantum well polarized electric field promotes a hole injection barrier, holes overflow an active layer and the like, the holes are injected unevenly and the efficiency is low, so that serious asymmetry and mismatching of electron holes in the quantum well are caused, electron leakage and carrier localization are caused, the holes are more difficult to transport in the quantum well, the carrier injection is uneven, the gain is uneven, according to a laser theory, after the laser emits stable laser to be saturated, quasi fermi energy levels of the holes and the electrons are pinned, the injected carriers are completely converted into photon output, the optical gain reaches saturation, junction voltage reaches saturation, and the concentration of carriers in a cavity does not change with current. The active layer is far away from symmetry break corresponding to equilibrium phase transition, so that discontinuous or abrupt change phenomenon of the laser occurs at the threshold, such as problems of conductivity jump, capacitance dip, junction voltage jump, series resistance dip, ideal factor jump and the like. Disclosure of Invention In order to solve one of the above technical problems, the present invention provides a gallium nitride-based semiconductor laser having a graded philips ionization waveguide layer. The embodiment of the invention provides a gallium nitride-based semiconductor laser with a graded Phillips ionization degree waveguide layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer is a graded Phillips ionization degree upper waveguide layer, and the lower waveguide layer is a graded Phillips ionization degree lower waveguide layer; the SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer on the gradient Philips ionization degree, the separation energy distribution fitting curve and the Philips ionization degree distribution fitting curve all meet LogNormal or extremum function distribution; The SIMS test In ion intensity distribution or In atomic concentration distribution fitting curve of the waveguide layer