CN-121983855-A - Gallium nitride-based semiconductor laser with graded longitudinal phonon rate waveguide layer

CN121983855ACN 121983855 ACN121983855 ACN 121983855ACN-121983855-A

Abstract

The invention provides a gallium nitride-based semiconductor laser with a graded longitudinal phonon rate waveguide layer, wherein a fitting curve of In ion intensity distribution or In atom concentration distribution and a fitting curve of longitudinal phonon rate of an upper waveguide layer and a lower waveguide layer are all matched with any one function distribution of Allometric, allometric1 and BiPhasic, freundichEXT, phonon group velocity and phonon energy gradient of the upper waveguide layer, the lower waveguide layer and the longitudinal direction (perpendicular to a quantum well surface) are regulated and controlled, directional management of phonon transportation and scattering is realized, the graded longitudinal phonon rate structure of the upper waveguide layer and the lower waveguide layer realizes smooth transition of phonon group velocity, interface reflection and back scattering are reduced, temperature quenching proportion and optical catastrophe proportion are further reduced, mismatching of phonon energy and quantum well energy level difference is reduced, resonance scattering is reduced, carrier relaxation rate is reduced, differential gain is improved, accumulation of high-energy phonon In the waveguide layer and the quantum well is inhibited, and thermal inversion current is improved.

Inventors

ZHENG JINJIAN
LAN JIABIN
HU ZHIYONG
ZHANG JIANGYONG
YANG LIXUN
ZHONG ZHIBAI
DENG HEQING
XUN FEILIN
LIU ZIHAN
CAI XIN
CHEN WANJUN
LI XIAOQIN

Assignees

安徽格恩半导体有限公司

Dates

Publication Date: 20260505
Application Date: 20260209

Claims (10)

1. The gallium nitride-based semiconductor laser with the graded longitudinal phonon rate waveguide layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the upper waveguide layer is a graded longitudinal phonon rate upper waveguide layer, and the lower waveguide layer is a graded longitudinal phonon rate lower waveguide layer; The SIMS test In ion intensity distribution or In atom concentration distribution fitting curve of the waveguide layer on the gradual change longitudinal phonon rate and the longitudinal phonon rate fitting curve meet any function distribution of Allometric, allometric1 and BiPhasic, freundichEXT; The SIMS test In ion intensity distribution or In atom concentration distribution fitting curve of the waveguide layer under the gradual change longitudinal phonon velocity and the longitudinal phonon velocity fitting curve meet any one function distribution of Allometric, allometric1 and BiPhasic, freundichEXT.
2. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer according to claim 1, wherein when the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer on the graded longitudinal phonon-rate satisfies Allometric function distribution, the Allometric function is y 1 =a+b*x 1 c function distribution, a is upper limit baseline parameter, b is attenuation proportionality coefficient, c is attenuation index, y 1 is SIMS test In ion intensity or In atomic concentration of the waveguide layer on the graded longitudinal phonon-rate, x is thickness of the waveguide layer on the graded longitudinal phonon-rate, wherein-3E 25 is equal to or more than a is equal to or less than 0,2E16 is equal to or less than b is equal to or less than 2E27,0.001 is equal to or less than 1000.
3. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer according to claim 1, wherein when the SIMS test In ion intensity distribution or In atomic concentration distribution of the waveguide layer at the graded longitudinal phonon-rate satisfies Allometric function distribution, the Allometric function is y 2 =f+g*x 2 ≡h function distribution, f is upper limit baseline parameter, g is attenuation proportionality coefficient, h is attenuation index, y 2 is SIMS test In ion intensity or In atomic concentration of the waveguide layer at the graded longitudinal phonon-rate, x 2 is waveguide layer thickness at the graded longitudinal phonon-rate, wherein 3E15 +.f +.3e26, -3E26 +.g 0,0.003 +.h +.3000.
4. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer according to claim 1, wherein when the fitted curve of the longitudinal phonon-rate distribution of the waveguide layer on the graded longitudinal phonon-rate satisfies Allometric function distribution, the Allometric function is y 3 =j+k*x 1 μm function distribution, j is upper baseline parameter, k is attenuation proportionality coefficient, m is attenuation index, y 3 is longitudinal phonon-rate of the waveguide layer on the graded longitudinal phonon-rate, x 1 is thickness of the waveguide layer on the graded longitudinal phonon-rate, wherein 600≤j≤6000000, -30000000≤k≤ 0,0.002≤m.2000.
5. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer according to claim 1, wherein when the fitted curve of the longitudinal phonon-rate distribution of the waveguide layer under the graded longitudinal phonon-rate satisfies Allometric function distribution, the Allometric function is y 4 =n+p*x 2 ≡q function distribution, n is upper limit baseline parameter, p is attenuation proportionality coefficient, q is attenuation index, y 3 is longitudinal phonon-rate of the waveguide layer under the graded longitudinal phonon-rate, x 2 is waveguide layer thickness under the graded longitudinal phonon-rate, wherein n is 6000 ≡ 60000000,600 ≡p is 6000000,0.0003 ≡q is 3000.
6. The gallium nitride-based semiconductor laser having a graded longitudinal phonon-rate waveguide layer according to claim 1, wherein the longitudinal phonon-rate profile of the waveguide layer at the graded longitudinal phonon-rate and the longitudinal phonon-rate profile of the waveguide layer at the graded longitudinal phonon-rate form a V-shaped graded longitudinal phonon-rate.
7. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer according to claim 1, wherein the lower waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, with a thickness of 300 to 8000 a/m; The upper waveguide layer is any one or any combination of InGaN or GaN/InGaN/GaN or GaN, and the thickness is 300 to 8000 Emi.
8. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer of claim 1, wherein the active layer is an InGaN/GaN quantum well.
9. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer according to claim 1, wherein the electron blocking layer is any one or any combination of AlGaN, gaN, inGaN, alInGaN, alN a to 800 a thick; the upper limiting layer is any one or any combination of AlGaN, alN, gaN, alInN, alInGaN and has a thickness of 500 to 9000 meters; The lower limiting layer is any one or any combination of AlGaN, gaN, alN, inGaN, alInGaN, alInN and has a thickness of 5000 to 50000 angstroms.
10. The gallium nitride-based semiconductor laser with graded longitudinal phonon-rate waveguide layer of claim 1, wherein the substrate is a GaN single crystal substrate.

Description

Gallium nitride-based semiconductor laser with graded longitudinal phonon rate waveguide layer Technical Field The application relates to the field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser with a gradual change longitudinal phonon rate waveguide layer. Background The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like compared with other types of lasers. The laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different that the light emitting diode generates radiation composite luminescence by the transition of electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can be excited only by meeting the excitation condition, so that the inversion distribution of carriers in an active area is required to be met, the excited radiation light oscillates back and forth in a resonant cavity, the light is amplified by the propagation in a gain medium, the gain is larger than the loss by meeting the threshold condition, and finally the laser is output. The nitride semiconductor laser has the problems that heat loss is converted into heat by stokes shift loss formed by photon energy difference between pumping light and oscillating light, and energy loss of coupling ratio of pumping energy level to upper energy level of laser is not 1, and the two energy losses are converted into heat, so that a large amount of waste heat is generated together, the temperature distribution of the laser is uneven, thermal expansion and thermal stress distribution are caused to be uneven, temperature quenching, laser fracture, thermal lens effect and stress birefringence effect are generated, the thermal lens generates lens-like phenomenon in space, and the stress birefringence effect changes polarization state of incident light, so that the depolarization light beam and the distortion of the laser are caused. The non-radiative composite loss and free carrier absorption exist in the active area of the laser chip to generate a large amount of heat, meanwhile, the resistance of the epitaxy and chip materials can generate joule heat loss and carrier absorption loss under current injection, the thermal conductivity of the chip materials is low, the heat dissipation performance is poor, the temperature of an active layer is increased, and the problems of red shift of lasing wavelength, reduction of quantum efficiency, reduction of power, increase of threshold current, shortening of service life, deterioration of reliability and the like occur. Disclosure of Invention In order to solve one of the technical problems, the invention provides a gallium nitride-based semiconductor laser with a graded longitudinal phonon rate waveguide layer. The embodiment of the invention provides a gallium nitride-based semiconductor laser with a gradual change longitudinal phonon rate waveguide layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer is a gradual change longitudinal phonon rate upper waveguide layer, and the lower waveguide layer is a gradual change longitudinal phonon rate lower waveguide layer; The SIMS test In ion intensity distribution or In atom concentration distribution fitting curve of the waveguide layer on the gradual ch