CN-121983857-A - Semiconductor laser spatial beam combining system and method

CN121983857ACN 121983857 ACN121983857 ACN 121983857ACN-121983857-A

Abstract

The invention discloses a semiconductor laser spatial beam combining system and method, wherein the system comprises at least two groups of laser emitting components for obtaining first laser and second laser, at least one beam combining lens arranged at the interaction position of the first laser and the second laser and used for reflecting the first laser to obtain first reflected laser, transmitting the second laser to obtain first transmitted laser, and spatially combining the first reflected laser and the first transmitted laser to obtain spatial beam combining beams of the first laser and the second laser, wherein the first laser and/or the second laser comprise multiple laser beams, and gradual superposition and power accumulation of multiple laser beams can be realized on the premise of not increasing the volume of the semiconductor laser spatial beam combining system, so that the output power density is improved, and the upper limit of the maximum output power is improved.

Inventors

YAN DAPENG
WANG WENJUAN
LI NING

Assignees

武汉锐科光纤激光技术股份有限公司

Dates

Publication Date: 20260505
Application Date: 20260205

Claims (10)

1. A semiconductor laser spatial beam combining system, comprising: the laser emission components are used for obtaining first laser and second laser, wherein the light paths of the first laser and the second laser are intersected; The beam combining lens is arranged at the interaction position of the first laser and the second laser and is used for reflecting the first laser to obtain first reflected laser, transmitting the second laser to obtain first transmitted laser, and spatially combining the first reflected laser and the first transmitted laser to obtain spatially combined beams of the first laser and the second laser; Wherein the first laser and/or the second laser comprises a plurality of lasers.
2. The semiconductor laser spatial beam combining system according to claim 1, wherein the laser emitting assembly comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis collimating lens, and a small mirror; Wherein the semiconductor laser chip is used for emitting laser light; The fast axis collimating lens and the slow axis collimating lens are respectively used for performing fast axis collimation treatment and slow axis collimation treatment on the laser; The small reflector is used for carrying out reflection treatment on the collimated laser to obtain the first laser.
3. The semiconductor laser spatial beam combining system according to claim 2, further comprising a plurality of small mirrors, the semiconductor laser chip comprising a plurality of laser emitting units, each laser emitting unit for emitting a beam of laser light; The plurality of small reflectors are arranged in a staggered mode, each small reflector corresponds to one laser emitting unit and is used for carrying out reflection calibration processing on laser emitted by the laser emitting unit to obtain first laser, and the first laser comprises a plurality of parallel lasers.
4. The semiconductor laser spatial beam combining system according to claim 1, wherein the laser emitting assembly comprises two laser emitting units, a large reflector and a polarization splitting prism, which are arranged in parallel, wherein each laser emitting unit comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis collimating lens and a small reflector; The semiconductor laser chip is used for emitting laser, the fast axis collimating lens and the slow axis collimating lens are respectively used for carrying out fast axis collimation treatment and slow axis collimation treatment on the laser, the small reflecting mirror is used for carrying out reflection calibration treatment on the collimated laser to obtain output laser of the laser emitting unit, and the output laser comprises first output laser and second output laser; The large reflector is used for reflecting the first output laser to obtain first output reflected laser; The polarization splitting prism is used for transmitting the first output reflected laser to obtain first output transmitted laser, reflecting the second output laser to obtain second output reflected laser, and carrying out polarization beam combination on the first output transmitted laser and the second output reflected laser to obtain the first laser.
5. The spatial beam combining system of claim 4, wherein the two laser emitting units are disposed on two opposite surfaces of the same base.
6. The semiconductor laser spatial beam combining system according to claim 4, further comprising a cooling space disposed between different ones of the laser emitting units; wherein the cooling space is used for filling a cooling medium.
7. The semiconductor laser spatial beam combining system of claim 6, wherein the cooling space further comprises at least two openings for exchanging the cooling medium with an external cooling medium.
8. The semiconductor laser spatial beam combining system of claim 7, wherein the cooling medium comprises at least one of water, an aqueous glycol solution, and a deionized water-based nanofluid.
9. The semiconductor laser spatial beam combining system according to claim 1, further comprising a beam shrinking lens and a collimating lens; the beam shrinking lens is used for carrying out beam shrinking treatment on the spatial beam combination beam to obtain a beam-shrunk spatial beam combination beam; the collimating lens is used for carrying out collimation treatment on the condensed space beam to obtain a target beam, and the target beam is used for being input into an optical fiber.
10. A semiconductor laser spatial beam combining method, comprising: Acquiring first laser and second laser, wherein the light paths of the first laser and the second laser are intersected; the first laser is reflected to obtain first reflected laser, and the second laser is transmitted to obtain first transmitted laser; spatially combining the first reflected laser and the first transmitted laser to obtain spatially combined beams of the first laser and the second laser; Wherein the first laser and/or the second laser comprises a plurality of lasers.

Description

Semiconductor laser spatial beam combining system and method Technical Field The invention relates to the technical field of semiconductor laser optics, in particular to a semiconductor laser space beam combining system and method. Background As a semiconductor device, a semiconductor laser has been increasingly demanded for its application, and in recent years, a semiconductor laser with high power and high beam quality has been rapidly developed. However, the related art is to fusion-splice light output from a plurality of semiconductor lasers with a semiconductor laser module to which an optical fiber is coupled. A plurality of semiconductor lasers are arranged in parallel in a housing of the semiconductor laser module. In order to increase the output power, on the one hand, the number of semiconductor lasers can be increased, and on the other hand, the output power of a single semiconductor laser can be increased, and in any method, the output power is limited by the overall space of the semiconductor laser module, so that the maximum output power is affected. Therefore, in the prior art, there is a problem in that the maximum output power is limited due to the limitation of the spatial layout of the semiconductor laser in the process of increasing the output power of the semiconductor laser. Disclosure of Invention The invention provides a semiconductor laser spatial beam combining system and method, which aim to solve the problem that the maximum output power is limited due to the limitation of the spatial layout of a semiconductor laser in the process of improving the output power of the semiconductor laser in the prior art. In order to solve the technical problems, the invention provides the following technical scheme: a semiconductor laser spatial beam combining system comprising: the laser emission components are used for obtaining first laser and second laser, wherein the light paths of the first laser and the second laser are intersected; The beam combining lens is arranged at the interaction position of the first laser and the second laser and is used for reflecting the first laser to obtain first reflected laser, transmitting the second laser to obtain first transmitted laser, and spatially combining the first reflected laser and the first transmitted laser to obtain spatially combined beams of the first laser and the second laser; Wherein the first laser and/or the second laser comprises a plurality of lasers. Optionally, the laser emitting assembly includes a semiconductor laser chip, a fast axis collimating lens, a slow axis collimating lens, and a small mirror; Wherein the semiconductor laser chip is used for emitting laser light; The fast axis collimating lens and the slow axis collimating lens are respectively used for performing fast axis collimation treatment and slow axis collimation treatment on the laser; The small reflector is used for carrying out reflection treatment on the collimated laser to obtain the first laser. Optionally, the semiconductor laser spatial beam combining system further comprises a plurality of small mirrors, and the semiconductor laser chip comprises a plurality of laser emitting units, each laser emitting unit is used for emitting a beam of laser light; The plurality of small reflectors are arranged in a staggered mode, each small reflector corresponds to one laser emitting unit and is used for carrying out reflection calibration processing on laser emitted by the laser emitting unit to obtain first laser, and the first laser comprises a plurality of parallel lasers. The laser emission assembly comprises two laser emission units, a large reflector and a polarization beam splitter prism, wherein the two laser emission units are arranged in parallel, and each laser emission unit comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis collimating lens and a small reflector; The semiconductor laser chip is used for emitting laser, the fast axis collimating lens and the slow axis collimating lens are respectively used for carrying out fast axis collimation treatment and slow axis collimation treatment on the laser, the small reflecting mirror is used for carrying out reflection calibration treatment on the collimated laser to obtain output laser of the laser emitting unit, and the output laser comprises first output laser and second output laser; The large reflector is used for reflecting the first output laser to obtain first output reflected laser; The polarization splitting prism is used for transmitting the first output reflected laser to obtain first output transmitted laser, reflecting the second output laser to obtain second output reflected laser, and carrying out polarization beam combination on the first output transmitted laser and the second output reflected laser to obtain the first laser. Alternatively, the two laser emitting units are respectively arranged on two opposite surfaces of the same base. Optionally, the semiconduc