CN-121983921-A - Gate oxide layer protection circuit, chip and electronic equipment

CN121983921ACN 121983921 ACN121983921 ACN 121983921ACN-121983921-A

Abstract

A gate oxide layer protection circuit, a chip and electronic equipment belong to the technical field of electronic circuits, two trigger signals are sent out through a series RC circuit in response to the voltage of a power rail, the series RC circuit is used for sending out a connection trigger signal from a first node to be connected with a switching circuit in response to the voltage of the power rail being larger than a preset value and sending out a disconnection trigger signal from the first node to be disconnected based on the coupling effect of a first capacitor in response to the voltage of the power rail being smaller than the preset value and generating spike voltage, the first node is a common joint of a first resistor and the first capacitor, and a functional circuit is connected with the first power rail and comprises a field effect transistor and used for executing corresponding functions, the switching circuit is used for responding to the connection trigger signal and connecting the grid of the field effect transistor with a second power rail and disconnecting the grid of the field effect transistor with the second power rail in response to disconnect the trigger signal, and therefore the reliability of the chip is improved.

Inventors

HUANG SHAOZHANG
LIU MIN
ZHOU HUI
WU JUNTING
WU WENQI
CHEN RENYUE
YOU HAIBIN
LIN JUNRU
FAN LIXIAN
LUO ZHENQIANG
LIANG HONGJI
HUO XIAODONG
WANG SHUAN

Assignees

晶门科技（深圳）有限公司

Dates

Publication Date: 20260505
Application Date: 20251231

Claims (11)

1. A gate oxide layer protection circuit, comprising: The series RC circuit is used for responding to the voltage of the power rail to send out a communication trigger signal from a first node to be communicated with the switching circuit, responding to the voltage of the power rail to be less than a preset value and to generate peak voltage, and sending out a disconnection trigger signal from the first node to be disconnected with the switching circuit based on the coupling action of the first capacitor, wherein the first node is a common joint of the first resistor and the first capacitor; The functional circuit is connected with the first power rail and comprises a field effect transistor for executing corresponding functions; The switching circuit is connected with the first node and is connected in series between the grid electrode of the field effect transistor and the second power rail, and is used for responding to the communication trigger signal, communicating the grid electrode of the field effect transistor with the second power rail and responding to the disconnection trigger signal, and disconnecting the connection between the grid electrode of the field effect transistor and the second power rail; the power supply rail comprises a positive power supply rail and a negative power supply rail, and the first power supply rail and the second power supply rail are respectively the positive power supply rail and the negative power supply rail.
2. The gate oxide protection circuit of claim 1, wherein the first resistor and the switching circuit are both connected to the positive supply rail, and the first capacitor and the functional circuit are both connected to the negative supply rail; The gate oxide layer protection circuit further includes: The inverter is connected with the first node and is used for inverting the communication trigger signal or the disconnection trigger signal so as to output the trigger signal after the inversion; The switching circuit is further connected with the inverter, and is specifically configured to connect the gate of the field effect transistor and the positive power rail in response to the connection trigger signal after the inversion, and disconnect the connection between the gate of the field effect transistor and the positive power rail in response to the disconnection trigger signal after the inversion.
3. The gate oxide protection circuit of claim 1, wherein the first capacitor and the switching circuit are both connected to the positive supply rail, and the first resistor and the functional circuit are both connected to the negative supply rail; The switching circuit is specifically used for responding to the connection trigger signal, connecting the grid electrode of the field effect tube with the positive electrode power rail, responding to the disconnection trigger signal, and disconnecting the connection between the grid electrode of the field effect tube and the positive electrode power rail.
4. The gate oxide protection circuit of claim 1, wherein the first resistor and the functional circuit are both connected to the positive supply rail, and the first capacitor and the switching circuit are both connected to the negative supply rail; The switching circuit is specifically used for responding to the inverted communication trigger signal, connecting the grid electrode of the field effect transistor with the negative electrode power rail, and responding to the inverted disconnection trigger signal, disconnecting the connection between the grid electrode of the field effect transistor and the negative electrode power rail.
5. The gate oxide protection circuit of claim 1, wherein the first capacitor and the functional circuit are both connected to the positive supply rail, and the first resistor and the switching circuit are both connected to the negative supply rail; The gate oxide layer protection circuit further includes: The inverter is connected with the first node and is used for inverting the communication trigger signal or the disconnection trigger signal so as to output the trigger signal after the inversion; The switching circuit is further connected with the inverter, and is specifically configured to connect the gate of the field effect transistor and the negative power rail in response to the connection trigger signal, and disconnect the connection between the gate of the field effect transistor and the negative power rail in response to the disconnection trigger signal.
6. The gate oxide layer protection circuit of claim 1, further comprising: The buffer is connected with the first node and the switch circuit and is used for buffering the connection trigger signal or the disconnection trigger signal so as to output the buffered trigger signal; The switching circuit is specifically configured to connect the gate of the field-effect transistor and the second power rail in response to the buffered connection trigger signal, and disconnect the connection between the gate of the field-effect transistor and the second power rail in response to the buffered disconnection trigger signal.
7. The gate oxide protection circuit of any of claims 1 to 6, wherein the functional circuit comprises at least one first PMOS transistor; The source electrode of the first PMOS tube and the drain electrode of the first PMOS tube are connected to the positive power rail in common; and the grid electrode of the first PMOS tube is connected with the switch circuit.
8. The gate oxide protection circuit of any of claims 1 to 6, wherein the functional circuit comprises at least one first NMOS transistor; the source electrode of the first NMOS tube and the drain electrode of the first NMOS tube are commonly connected with the negative electrode power rail; and the grid electrode of the first NMOS tube is connected with the switch circuit.
9. The gate oxide protection circuit of any of claims 1 to 6, wherein the functional circuit comprises at least one inverter circuit comprising a second PMOS transistor and a second NMOS transistor; The source electrode of the second PMOS tube is connected with the positive electrode power supply rail, the source electrode of the second NMOS tube is connected with the negative electrode power supply rail, the drain electrode of the second PMOS tube is connected with the drain electrode of the second NMOS tube, and the grid electrode of the second PMOS tube and the grid electrode of the second NMOS tube N2 are connected with the switch circuit.
10. A chip comprising the gate oxide layer protection circuit according to any one of claims 1 to 9.
11. An electronic device comprising the gate oxide layer protection circuit according to any one of claims 1 to 9.

Description

Gate oxide layer protection circuit, chip and electronic equipment Technical Field The application belongs to the technical field of electronic circuits, and particularly relates to a gate oxide layer protection circuit, a chip and electronic equipment. Background In an integrated circuit, functional circuits are connected between the power rails for performing corresponding functions upon activation of the voltage of the power rails. The functional circuitry may include decoupling capacitors, standby circuitry, and unused IP for control signals. The standby circuit includes a standby circuit or element for use in a chip retrofit wherein the gate of the field effect transistor would be connected to the power rail first. In the IP where the control signal is not used, the control signal long power or group, i.e., the gate of the fet therein, is also connected to the power rail. With the improvement of the semiconductor process, the thread is smaller, the thickness of the gate oxide layer is smaller, and the breakdown voltage is smaller. Therefore, especially for chips below 90nm, the gate oxide layer of the field effect transistor in the functional circuit is easily broken down and damaged when the peak voltage occurs on the power rail or when the electrostatic discharge (Electrostatic Discharge, ESD) occurs. Therefore, it is needed to provide a gate oxide protection circuit to improve the reliability of the chip. Disclosure of Invention The application aims to provide a gate oxide layer protection circuit, a chip and electronic equipment, and aims to solve the problem of poor reliability of the related chip. The embodiment of the application provides a gate oxide layer protection circuit, which comprises: The series RC circuit is used for outputting a connection trigger signal from a first node to connect the switch circuit in response to the voltage of the power rail being larger than a preset value, and sending the disconnection trigger signal from the first node to disconnect the switch circuit based on the coupling action of the first capacitor in response to the voltage of the power rail being smaller than the preset value and the peak voltage; The functional circuit is connected with the first power rail and comprises a field effect transistor for executing corresponding functions; The switching circuit is connected with the first node and is connected in series between the grid electrode of the field effect transistor and the second power rail, and is used for responding to the communication trigger signal, communicating the grid electrode of the field effect transistor with the second power rail and responding to the disconnection trigger signal, and disconnecting the connection between the grid electrode of the field effect transistor and the second power rail; the power supply rail comprises a positive power supply rail and a negative power supply rail, and the first power supply rail and the second power supply rail are respectively the positive power supply rail and the negative power supply rail. In one embodiment, the first resistor and the switch circuit are both connected to the positive power rail, and the first capacitor and the functional circuit are both connected to the negative power rail; The gate oxide layer protection circuit further includes: The inverter is connected with the first node and is used for inverting the communication trigger signal or the disconnection trigger signal so as to output the trigger signal after the inversion; The switching circuit is further connected with the inverter, and is specifically configured to connect the gate of the field effect transistor and the positive power rail in response to the connection trigger signal after the inversion, and disconnect the connection between the gate of the field effect transistor and the positive power rail in response to the disconnection trigger signal after the inversion. In one embodiment, the first capacitor and the switch circuit are both connected to the positive power rail, and the first resistor and the functional circuit are both connected to the negative power rail; The switching circuit is specifically used for responding to the connection trigger signal, connecting the grid electrode of the field effect tube with the positive electrode power rail, responding to the disconnection trigger signal, and disconnecting the connection between the grid electrode of the field effect tube and the positive electrode power rail. In one embodiment, the first resistor and the functional circuit are both connected to the positive power rail, and the first capacitor and the switching circuit are both connected to the negative power rail; The switching circuit is specifically used for responding to the inverted communication trigger signal, connecting the grid electrode of the field effect transistor with the negative electrode power rail, and responding to the inverted disconnection trigger signal, disconnecting the con