CN-121983932-A - High-power low-heating power distribution device

CN121983932ACN 121983932 ACN121983932 ACN 121983932ACN-121983932-A

Abstract

The application discloses a high-power low-heating power distribution device which comprises two NMOS (N-channel metal oxide semiconductor) tubes connected in series between an input power positive end and a load positive end in a back-to-back mode, wherein sources of the two NMOS tubes are connected with each other and grid electrodes of the two NMOS tubes are connected with each other, a drain electrode of one NMOS tube is connected with the power positive end, a drain electrode of the other NMOS tube is connected with the load positive end, and the NMOS tubes are connected in series between an input power negative end and the load negative end in a back-to-back mode and are completely symmetrical. This arrangement creates a bi-directionally symmetrical electronic switching path without the need for mechanical contacts or additional capacitance. The double NMOS tubes are connected back to back, can cut off leakage current in a bidirectional way, thoroughly block a reverse conduction path, radically reduce static power consumption and heat productivity, and are particularly suitable for high-power scenes, the pure semiconductor switch replaces a mechanical relay, the problems of action life limitation and vibration sensitivity are eliminated, reliability is remarkably improved, the synchronous performance of positive and negative ends is extremely high due to symmetrical design, control errors caused by potential offset are avoided, the structure is simple, the passive device requirements are few, and cost and fault points are reduced.

Inventors

TANG HUI
SUN LEI
CHEN GONGPU
WANG HAOZHOU
WU XULIANG
DING JUN
ZHANG CHAOYANG
ZHAO FUCHUAN
LI TING
Song Shimeng
YUAN TIANLIANG
CUI JIATIAN
YIN GUI
YUE HUIFENG
WANG HONGPING
YANG YANG

Assignees

湖北三江航天红峰控制有限公司

Dates

Publication Date: 20260505
Application Date: 20251231

Claims (9)

1. The high-power low-heating power distribution device is characterized by comprising two NMOS (N-channel metal oxide semiconductor) tubes connected in series between an input power supply positive end and a load positive end, wherein the sources of the two NMOS tubes are connected, the grids of the two NMOS tubes are connected, the drain electrode of one NMOS tube is connected with the power supply positive end, and the drain electrode of the other NMOS tube is connected with the load end; The two NMOS tubes are connected in series between the negative end of the input power supply and the negative end of the load, the sources of the two NMOS tubes are connected, the grid electrodes of the two NMOS tubes are connected, the drain electrode of one NMOS tube is connected with the negative end of the power supply, and the drain electrode of the other NMOS tube is connected with the negative end of the load.
2. The high power low heat generation power distribution apparatus of claim 1 wherein the NMOS transistor between the positive power source terminal and the positive load terminal has its gate connected to the positive output terminal of the first photovoltaic element and its source connected to the negative output terminal of the first photovoltaic element; The grid electrode of the NMOS tube between the negative end of the power supply and the negative end of the load is connected with the positive end of the output of the second photovoltaic element, and the source electrode of the NMOS tube is connected with the negative end of the output of the second photovoltaic element; The first photovoltaic element is connected with the input end tail of the second photovoltaic element in series, and is used for realizing the passage or disconnection between the positive end of the power supply and the positive end of the load and between the negative end of the power supply and the negative end of the load by switching in or switching off the current at the input ends of the first photovoltaic element and the second photovoltaic element.
3. The high power low heat generation power distribution apparatus of claim 2, wherein the voltage at the output ends of the first photovoltaic element and the second photovoltaic element is configured to meet the voltage requirement of the NMOS transistor gate for ensuring reliable turn-on or turn-off of the NMOS transistor.
4. The high-power low-heating power distribution device according to claim 2, further comprising a first optocoupler, wherein an output end of the first optocoupler is connected in series with input ends of the first photovoltaic element and the second photovoltaic element, and the output end of the first optocoupler is used for controlling currents of the input ends of the first photovoltaic element and the second photovoltaic element after a control signal Ctrl applied to the input ends of the first optocoupler is subjected to current limiting through a first resistor.
5. The high-power low-heating power distribution device according to claim 4, further comprising a second optocoupler, wherein an input end of the second optocoupler is connected in series in an input end loop of the first photovoltaic element and the second photovoltaic element, and an output end of the second optocoupler is connected with a measurement signal Test for detecting whether the input end current of the photovoltaic element exists or not, and when the Ctrl signal is valid, the Test outputs a low level to indicate a passage, and when the Ctrl signal is invalid, the Test outputs a high resistance state to indicate an open circuit.
6. The high power low heat generation power distribution apparatus of claim 5 further comprising a second resistor connected in series in the input loop of said first photovoltaic element and said second photovoltaic element for controlling loop current.
7. The high power low heat generation power distribution apparatus according to claim 6, wherein the 1 st pin of the first optocoupler is connected to Ctrl signal via a first resistor, the 2 nd pin is connected to digital ground, and the 3 rd pin of the second optocoupler is connected to Test signal, and the 4 th pin is connected to digital ground.
8. The high-power low-heat distribution device according to claim 7, wherein a level of the control signal Ctrl is configured to be a high level or a low level; When Ctrl is configured to be high, the input loops of the first and second photovoltaic elements are conductive, the positive power supply terminal is connected with the positive load terminal, and the negative power supply terminal is connected with the negative load terminal; when Ctrl is configured low, the input loop of the first and second photovoltaic elements is disconnected, and the positive power supply terminal and the positive load terminal are disconnected, and the negative power supply terminal and the negative load terminal are disconnected.
9. The high-power low-heat distribution device according to claim 8, wherein the output state of the measurement signal Test is: when the control signal Ctrl is valid, test outputs a low level, indicating a path; When the control signal Ctrl is invalid, the Test outputs a high resistance state to represent disconnection; The output state is realized through the second optocoupler and is used for monitoring the on-off state in real time.

Description

High-power low-heating power distribution device Technical Field The application relates to the technical field of industrial control, in particular to a high-power low-heating power distribution device. Background In the fields of industrial automation, power systems and high-power equipment power supply, the reliability and efficiency of the power supply and distribution system are important. With the development of technology, high-power scenes put higher requirements on a power distribution method, and low heating, high isolation and long service life are required to be realized. The conventional high-power supply and distribution is realized by switching a mechanical relay, when power is required to be supplied, the relay is connected to supply power to a load end, and when power is not required to be supplied, the relay is disconnected to stop supplying power to the load end, so that two problems exist. In recent years, semiconductor devices such as MOS transistors have been introduced as alternatives in order to improve switching speed and reliability. However, thermal management, bidirectional cut-off characteristics and state monitoring under high power conditions remain technical difficulties, and the method or the implementation process is complex, or defects exist in bidirectional cut-off, on-off control and control state detection, so that a solution which can achieve the effects of performance, cost and usability is needed in the industry. Disclosure of Invention In view of at least one of the foregoing drawbacks and needs for improvement in the art, the present application provides a high power low heat generation power distribution apparatus that addresses at least one of the above-mentioned problems with the background art. In order to achieve the above object, according to a first aspect of the present application, there is provided a high-power low-heat distribution device, including two NMOS transistors connected in series between a positive input power terminal and a positive load terminal, sources of the two NMOS transistors being connected, gates of the two NMOS transistors being connected, wherein a drain of one NMOS transistor is connected to the positive power terminal, and a drain of the other NMOS transistor is connected to the positive load terminal; The two NMOS tubes are connected in series between the negative end of the input power supply and the negative end of the load, the sources of the two NMOS tubes are connected, the grid electrodes of the two NMOS tubes are connected, the drain electrode of one NMOS tube is connected with the negative end of the power supply, and the drain electrode of the other NMOS tube is connected with the negative end of the load. Further, in the high-power low-heating power distribution device, the grid electrode of the NMOS tube between the positive end of the power supply and the positive end of the load is connected with the positive end of the output of the first photovoltaic element, and the source electrode is connected with the negative end of the output of the first photovoltaic element; The grid electrode of the NMOS tube between the negative end of the power supply and the negative end of the load is connected with the positive end of the output of the second photovoltaic element, and the source electrode of the NMOS tube is connected with the negative end of the output of the second photovoltaic element; The first photovoltaic element is connected with the input end tail of the second photovoltaic element in series, and is used for realizing the passage or disconnection between the positive end of the power supply and the positive end of the load and between the negative end of the power supply and the negative end of the load by switching in or switching off the current at the input ends of the first photovoltaic element and the second photovoltaic element. Further, in the high-power low-heating power distribution device, the voltage of the output ends of the first photovoltaic element and the second photovoltaic element is configured to meet the voltage requirement of the grid electrode of the NMOS tube, and the high-power low-heating power distribution device is used for ensuring reliable on or off of the NMOS tube. Further, the high-power low-heating power distribution device further comprises a first optocoupler, wherein the output end of the first optocoupler is connected in series with the input ends of the first photovoltaic element and the second photovoltaic element, and the output end of the first optocoupler is used for controlling the current of the input ends of the first photovoltaic element and the second photovoltaic element after the control signal Ctrl applied to the input end of the first optocoupler is subjected to current limiting through a first resistor. Further, the high-power low-heating power distribution device further comprises a second optocoupler, the input end of the second optocoupler is connected in