CN-121984325-A - High-voltage three-phase bridge grid driving circuit

CN121984325ACN 121984325 ACN121984325 ACN 121984325ACN-121984325-A

Abstract

The invention discloses a high-voltage three-phase bridge grid driving circuit, which relates to the technical field of high-voltage integrated circuits and comprises a logic input circuit, a narrow pulse generating circuit, a high-side circuit and a low-side circuit, wherein the logic input circuit is provided with three high-side signal output ends and three low-side signal output ends, the narrow pulse generating circuit comprises three narrow pulse branches, the high-side circuit comprises three high-side branches, and the low-side circuit comprises three low-side branches. The invention has the characteristics of good channel consistency, high reliability and the like.

Inventors

LI XIAOHUI
WANG QIANG
WANG HONGJUN
WANG HUA
ZENG HUA

Assignees

成都环宇芯科技有限公司

Dates

Publication Date: 20260505
Application Date: 20260115

Claims (8)

1. The high-voltage three-phase bridge grid driving circuit is characterized by comprising a logic input circuit, a narrow pulse generating circuit, a high-side circuit and a low-side circuit; The logic input circuit is provided with three high-side signal output ends and three low-side signal output ends and is used for adjusting the low-voltage logic signals into a multi-output form; The narrow pulse generating circuit comprises three narrow pulse branches, the input ends of the three narrow pulse branches are respectively connected with three high-side output ends of the logic input circuit in a one-to-one correspondence manner, and the output ends of the three narrow pulse branches are respectively connected with the three high-side branch input ends of the logic input circuit in a one-to-one correspondence manner; The high-side circuit comprises three high-side branches, each high-side branch comprises a high-voltage level shift circuit and a high-side output driving circuit, the input end of the high-voltage level shift circuit is used as the input end of the high-side branch, the output end of the high-voltage level shift circuit is connected with the input end of the high-side output driving circuit, and the output end of the high-side output driving circuit is used as the output end of the high-side circuit; The low-side circuit comprises three low-side branches, each low-side branch comprises a dead zone adjustable circuit and a low-side output driving circuit, the input end of the dead zone adjustable circuit is used as the input end of the low-side branch to be connected with the three low-side signal output ends of the logic input circuit in a one-to-one correspondence mode, the output end of the dead zone adjustable circuit is connected with the input end of the low-side output driving circuit, and the output end of the low-side output driving circuit is used as the output end of the low-side circuit.
2. The high voltage three-phase bridge gate drive circuit of claim 1, wherein the logic input circuit comprises six structurally identical logic conversion branches, wherein three logic conversion branches are used for the first high side signal, the second high side signal, and the third high side signal, respectively, and the remaining three logic conversion branches are used for the first low side signal, the second low side signal, and the third low side signal, respectively; each logical conversion branch comprises: the input end of the filtering unit is used as the input end of the logic conversion branch circuit; a Schmitt circuit (S1) with an input end connected with the output end of the filtering unit; an inverter (E0) whose input terminal is connected to the output terminal of the Schmitt circuit; The two input ends of the boosting unit are respectively connected with the input end and the output end of the inverter; the three input ends of the secondary three-input NAND gate are respectively connected with the output end of the boosting unit, the first control signal end and the second control signal end; And the three input ends of the final-stage three-input NAND gate are respectively connected with the output end, the third control signal end and the fourth control signal end of the secondary three-input NAND gate.
3. The high-voltage three-phase bridge gate driving circuit according to claim 2, wherein the voltage boosting unit comprises a first PMOS tube, a second PMOS tube, a first NMOS tube and a second NMOS tube, wherein the sources of the first PMOS tube and the second PMOS tube are connected to VCC, the sources of the first NMOS tube and the second NMOS tube are connected to low-side power ground COM, the drains of the first PMOS tube and the first NMOS tube are connected, the drains of the second PMOS tube and the second NMOS tube are connected, the gate of the first PMOS tube is connected to the drain of the second PMOS tube, the gate of the second PMOS tube is connected to the drain of the first PMOS tube, the gate of the second NMOS tube is used as a first input terminal to the output terminal of the inverter, the gate of the first NMOS tube is used as a second input terminal to the input terminal of the inverter, and the drain of the first PMOS tube is used as the output terminal of the voltage boosting unit.
4. The high voltage three-phase bridge gate drive circuit of claim 2, wherein the three narrow pulse branches of the narrow pulse generation circuit are identical in structure, the narrow pulse branches comprising: An inverter (E1) whose input is the input of the narrow pulse branch; a fifth PMOS tube (P4), the source electrode of which is connected with VCC, and the grid electrode of which is connected with the output end of the inverter (E1); The source electrode of the fifth NMOS tube (N4) is grounded, the grid electrode of the fifth NMOS tube is connected with the output end of the inverter (E1), the drain electrode of the fifth NMOS tube is connected with the drain electrode of the fifth PMOS tube through a resistor (R3), and the drain electrode of the fifth NMOS tube is grounded through an adjustable capacitor; A sixth PMOS tube (P5), the source electrode of which is connected with VCC, and the grid electrode of which is connected with the output end of the inverter (E1); the source electrode of the sixth NMOS tube (N5) is grounded, the grid electrode of the sixth NMOS tube is connected with the output end of the inverter (E1), the drain electrode of the sixth NMOS tube (P5) is connected with the drain electrode of the sixth NMOS tube through a resistor (R4), and the drain electrode of the sixth NMOS tube is grounded through an adjustable capacitor; one input end of the first NAND gate (NA 1) is connected with the drain electrode of the fifth PMOS tube (P4), and the other input end of the first NAND gate is connected with the output end of the inverter (E1); An inverter (E2) with an input end connected with the output end of the first NAND gate (NA 1) and an output end serving as a negative output end of the narrow pulse branch; an inverter (E3) whose input terminal is connected with the drain electrode of the sixth NMOS tube (N5); a second NAND gate (NA 2), one input end of which is connected with the output end of the inverter (E3), and the other input end of which is connected with the input end of the inverter (E1); and the input end of the inverter (E4) is connected with the output end of the second NAND gate (NA 2), and the output end of the inverter is used as the positive output end of the narrow pulse branch.
5. The high voltage three-phase bridge gate drive circuit of claim 4, wherein the high side branch comprises: An inverter (E5) with an input end connected with the positive output end of the narrow pulse branch through a level shift circuit; A seventh PMOS tube (P6), the source electrode of which is connected with the voltage VB, and the grid electrode of which is connected with the output end of the inverter (E5); A seventh NMOS tube (N6), the source electrode of which is grounded VS, the grid electrode of which is connected with the output end of the inverter (E5), and the drain electrode of which is connected with the drain electrode of the seventh PMOS tube (P6) through a resistor (R7); The input end of the Schmitt circuit (S2) is connected with the drain electrode of the seventh NMOS tube (N6) and is grounded to VS through a capacitor; an inverter (E6) with an input end connected with the negative output end of the narrow pulse branch through a level shift circuit; an eighth PMOS tube (P7), the source electrode of which is connected with the voltage VB, and the grid electrode of which is connected with the output end of the inverter (E6); An eighth NMOS tube (N7), wherein the source electrode of the eighth NMOS tube is grounded to VS, the grid electrode of the eighth NMOS tube is connected with the output end of the inverter (E6), and the drain electrode of the eighth NMOS tube is connected with the drain electrode of the eighth PMOS tube (P7) through a resistor (R8); the input end of the Schmitt circuit (S3) is connected with the drain electrode of the eighth NMOS tube (N7) and is grounded to VS through a capacitor; The first input end of the RS latch is connected with the output end of the Schmitt circuit (S2), the second input end of the RS latch is connected with the output end of the Schmitt circuit (S3), and the power end of the RS latch is connected with an under-voltage protection circuit; an inverter (E7) whose input terminal is connected to the output terminal of the RS latch; A ninth NMOS tube (N8) with its drain electrode connected to the power supply VB and its gate electrode connected to the output end of the inverter (E7); and the grid electrode of the tenth NMOS tube (N9) is connected with the input end of the inverter (E7), the source electrode of the tenth NMOS tube is grounded, the drain electrode of the tenth NMOS tube (N9) is connected with the source electrode of the ninth NMOS tube (N8), and the drain electrode of the tenth NMOS tube (N9) is used as the output end of the high-side branch.
6. The high voltage three-phase bridge gate drive circuit of claim 5, wherein the level shift circuit comprises: NLDMOS (L0), drain connects reference voltage VBS through the resistance, source connects to ground, the grid connects the positive output end of the narrow pulse branch, the drain connects reference voltage VBS through at least two serially connected voltage stabilizing diodes as the first output end; NLDMOS (L1), drain connects reference voltage VBS through the resistance, source connects to ground, the grid connects the negative output end of the narrow pulse branch, the drain also connects reference voltage VBS through at least two serially connected voltage-stabilizing diodes as the second output end; The first output end is connected with the input end of the inverter (E5), and the second output end is connected with the input end of the inverter (E6).
7. The high voltage three-phase bridge gate drive circuit of claim 5, wherein the low side leg comprises: An inverter (E10) whose input is the input of the low-side branch; a ninth PMOS tube (P8), the source electrode of which is connected with the power VCC, and the grid electrode of which is connected with the output end of the inverter (E10); An eleventh NMOS tube (N10) with a source electrode grounded COM, a grid electrode connected with the output end of the inverter (E10), a drain electrode connected with the drain electrode of the ninth PMOS tube (P8) through a resistor (R9), and a drain electrode grounded COM through an adjustable capacitor; the input end of the Schmitt circuit (S4) is connected with the drain electrode of the eleventh NMOS tube (N10), and the output end of the Schmitt circuit is connected with the input end of the inverter (E8); the input end of the inverter (E9) is connected with the output end of the inverter (E8), and the output end of the inverter is connected with the grid electrode of the twelfth NMOS tube (N11), the drain electrode of the twelfth NMOS tube (N11) is connected with the power supply VCC, and the source electrode is used as the output end of the low-side branch; The thirteenth NMOS transistor (N12) has its gate connected to the output of the inverter (E8), its source connected to ground COM, and its drain connected to the source of the twelfth NMOS transistor (N11).
8. The high voltage three-phase bridge gate drive circuit of claim 1, wherein the low-side circuit comprises a low-side under-voltage protection circuit and the high-side circuit comprises a high-side under-voltage protection circuit.

Description

High-voltage three-phase bridge grid driving circuit Technical Field The invention relates to the technical field of high-voltage integrated circuits, in particular to a multichannel high-voltage gate driving circuit. Background The high-voltage integrated circuit mainly comprises circuits for converting electric energy and controlling signals, and along with the development requirements of high integration level, miniaturization and the like, for the traditional discrete circuit, the problems of large area, channel consistency and the like of a three-phase bridge driving circuit formed by a half-bridge driving are solved, and the reliability of the system is ensured by additionally adding redundancy design. Meanwhile, the working voltage of the traditional high-voltage driving integrated circuit is only 600V based on the process reason, and along with the continuous progress of the development process of the high-voltage driving circuit, the working voltage range is also improved, and the working scene of 1200V of bus working voltage can be realized. Patent CN202510903289 'a miniaturized high-voltage large-current SIP encapsulation three-phase bridge drive module' proposes a miniaturized high-voltage large-current SIP type drive circuit, can drive three-phase bridge drive circuit based on this patent, realizes 1200V high-voltage drive circuit function, but its physical size still is greater than integrated circuit, and the transmission line overlength leads to transmission delay loss to increase and interference killing feature weakens, leads to the inductance to grow when drive circuit transient upset, for three-phase bridge drive circuit, its reliability reduces. Patent CN201711023067, "a digital isolation type high-power three-phase brushless motor driving module", proposes a digital isolation type high-power three-phase brushless motor driving module, the circuit of which comprises complex modules such as an optocoupler isolation unit, wherein the optocoupler module has a large volume and is unfavorable for integration, The transmission bandwidth is limited, the method is not suitable for high-frequency signal transmission, meanwhile, the problem of overlarge transmission delay exists, and the linearity is poor and an additional compensation circuit is needed for compensation. Disclosure of Invention The invention aims to solve the technical problems of overlarge area of a three-phase bridge module and a circuit based on the SIP technology of optocouplers and the like, and provides a 1200V high-voltage three-phase bridge grid driving circuit which has the advantages of high integration level, high power, high integration level and the like aiming at the requirements of integration and reliability and the process improvement of a high-voltage integrated circuit. The technical scheme adopted by the invention for solving the technical problems is that the high-voltage three-phase bridge grid driving circuit is characterized by comprising a logic input circuit, a narrow pulse generating circuit, a high-side circuit and a low-side circuit; The logic input circuit is provided with three high-side signal output ends and three low-side signal output ends and is used for adjusting the low-voltage logic signals into a multi-output form; The narrow pulse generating circuit comprises three narrow pulse branches, the input ends of the three narrow pulse branches are respectively connected with three high-side output ends of the logic input circuit in a one-to-one correspondence manner, and the output ends of the three narrow pulse branches are respectively connected with the three high-side branch input ends of the logic input circuit in a one-to-one correspondence manner; The high-side circuit comprises three high-side branches, each high-side branch comprises a high-voltage level shift circuit and a high-side output driving circuit, the input end of the high-voltage level shift circuit is used as the input end of the high-side branch, the output end of the high-voltage level shift circuit is connected with the input end of the high-side output driving circuit, and the output end of the high-side output driving circuit is used as the output end of the high-side circuit; The low-side circuit comprises three low-side branches, each low-side branch comprises a dead zone adjustable circuit and a low-side output driving circuit, the input end of the dead zone adjustable circuit is used as the input end of the low-side branch to be connected with the three low-side signal output ends of the logic input circuit in a one-to-one correspondence mode, the output end of the dead zone adjustable circuit is connected with the input end of the low-side output driving circuit, and the output end of the low-side output driving circuit is used as the output end of the low-side circuit. Further, the logic input circuit comprises six logic conversion branches with the same structure, wherein three logic conversion branches are respec