CN-121984347-A - Two-stage charge pump circuit, driving circuit and electronic equipment

CN121984347ACN 121984347 ACN121984347 ACN 121984347ACN-121984347-A

Abstract

The invention discloses a two-stage charge pump circuit, a driving circuit and electronic equipment, which belong to the technical field of charge pump circuit design and comprise two-stage charge pump units connected in a cascading manner, wherein the first-stage charge pump unit comprises a first-stage clock driving circuit, a first coupling capacitor and a second coupling capacitor which are connected with each other, the second-stage charge pump unit comprises a second-stage clock driving circuit, a third coupling capacitor and a fourth coupling capacitor which are connected with each other, a voltage input end of the second-stage clock driving circuit is connected with a voltage output end of the first-stage clock driving circuit, and all the coupling capacitors are MOS capacitors. The two-stage charge pump circuit aims to solve the defects of the two-stage charge pump circuit in the prior art in the aspects of voltage resistance, chip area and manufacturing cost of a second-stage capacitor, so that the MOS capacitor can meet the voltage resistance requirement in the second stage, and the reliable operation of the circuit is ensured while the chip area is saved and the power consumption and the manufacturing cost are reduced.

Inventors

ZHAO LEI
WANG BING
LIU TAO

Assignees

博尔微晶(深圳)科技有限责任公司

Dates

Publication Date: 20260505
Application Date: 20260107

Claims (10)

1. The two-stage charge pump circuit comprises a first-stage charge pump unit (1) and a second-stage charge pump unit (2) which are connected in cascade, and is characterized in that the first-stage charge pump unit (1) is connected with an input voltage end VIN, a first clock signal end CLK and a second clock signal end CLKB and comprises a first-stage clock driving circuit (11), a first coupling capacitor C1 and a second coupling capacitor C2 which are connected with each other; The second-stage charge pump unit (2) comprises a second-stage clock driving circuit (21), a third coupling capacitor C3 and a fourth coupling capacitor C4 which are connected with each other, and the voltage input end of the second-stage clock driving circuit (21) is connected with the voltage output end of the first-stage clock driving circuit (11); The first coupling capacitor C1, the second coupling capacitor C2, the third coupling capacitor C3, and the fourth coupling capacitor C4 are all MOS capacitors.
2. The two-stage charge pump circuit according to claim 1, wherein the one-stage clock driving circuit (11) comprises a cross-coupling structure composed of a first body diode M1, a second body diode M2, a third body diode M3, and a fourth body diode M4; The drain electrode of the first body diode M1 is connected with the drain electrode of the second body diode M2, the grid electrode of the first body diode M1 is connected with the source electrode of the second body diode M2, the source electrode of the first body diode M1 is simultaneously connected with the grid electrode of the second body diode M2, the grid electrode of the third body diode M3 and the source electrode of the fourth body diode M4, the source electrode of the second body diode M2 is also connected with the source electrode of the third body diode M3 and the grid electrode of the fourth body diode M4, and the drain electrode of the third body diode M3 is connected with the drain electrode of the fourth body diode M4.
3. The two-stage charge pump circuit according to claim 2, wherein the two-stage clock driving circuit (21) comprises a cross-coupling structure composed of a fifth body diode M5, a sixth body diode M6, a seventh body diode M7 and an eighth body diode M8; The drain electrode of the fifth body diode M5 is connected with the drain electrode of the sixth body diode M6, the gate electrode of the fifth body diode M5 is connected with the source electrode of the sixth body diode M6, the source electrode of the fifth body diode M5 is simultaneously connected with the gate electrode of the sixth body diode M6, the gate electrode of the seventh body diode M7 and the source electrode of the eighth body diode M8, the source electrode of the sixth body diode M6 is also connected with the source electrode of the seventh body diode M7 and the gate electrode of the eighth body diode M8, and the drain electrode of the seventh body diode M7 is connected with the drain electrode of the eighth body diode M8.
4. The two-stage charge pump circuit of claim 3, further comprising a fifth filter capacitor C5 and a sixth filter capacitor C6; The fifth filter capacitor C5 and the sixth filter capacitor C6 are MOS capacitors, the drain electrode of the first body diode M1 is further connected with the input voltage end VIN, the source electrode of the second body diode M2 is further connected with the positive electrode of the second coupling capacitor C2, the negative electrode of the second coupling capacitor C2 is connected with the first clock signal end CLK, the source electrode of the first body diode M1 is further connected with the positive electrode of the first coupling capacitor C1, the negative electrode of the first coupling capacitor C1 is connected with the second clock signal end CLKB, the drain electrode of the third body diode M3 serves as the voltage output end of the first-stage clock driving circuit (11), the drain electrode of the fifth body diode M5 serves as the voltage input end of the second-stage clock driving circuit (21), the voltage output end of the first-stage clock driving circuit (11) is simultaneously connected with the positive electrode of the fifth filter capacitor C5 and the voltage input end CLK of the second-stage clock driving circuit (21), the negative electrode of the first-stage diode M3 is further connected with the voltage input end of the fifth body diode C3, the drain electrode of the fifth body diode M3 is further connected with the voltage input end of the fifth-stage clock driving circuit (21), the voltage output end of the fifth body diode M5 is connected with the voltage output end of the fifth-stage clock driving circuit (3) is connected with the positive electrode of the fourth-stage clock signal end C4, the negative electrode of the third coupling capacitor C3 is connected with the source electrode of the fourth body diode M4, the drain electrode of the seventh body diode M7 is used as the voltage output end of the secondary clock driving circuit (21) and is connected with the positive electrode of the sixth filter capacitor C6, the negative electrode of the sixth filter capacitor C6 is connected with the input voltage end VIN, and the voltage output end of the secondary clock driving circuit (21) is used for outputting a secondary driving voltage signal CP2.
5. The two-stage charge pump circuit of claim 4, wherein a first buffer I1 is further connected between the negative electrode of the third coupling capacitor C3 and the source electrode of the fourth body diode M4, and a second buffer I2 is further connected between the negative electrode of the fourth coupling capacitor C4 and the source electrode of the third body diode M3.
6. The two-stage charge pump circuit of claim 4, further comprising a zener diode D1; The drain electrode of the seventh body diode M7 is further connected to the cathode of the zener diode D1 as the voltage output end of the second clock driving circuit (21), the anode of the zener diode D1 is connected to the input voltage end VIN, and the zener diode D1 is used for clamping the output voltage of the voltage output end of the second clock driving circuit (21).
7. The two-stage charge pump circuit of claim 4, wherein the first coupling capacitor C1, the second coupling capacitor C2, the third coupling capacitor C3, the fourth coupling capacitor C4, the fifth filter capacitor C5 and the sixth filter capacitor C6 are each stacked over their capacitance structures and connected in parallel with MOM capacitors.
8. The two-stage charge pump circuit of claim 7, further comprising a seventh coupling capacitor C7, an eighth coupling capacitor C8, a ninth coupling capacitor C9, a tenth coupling capacitor C10, an eleventh filter capacitor C11, a twelfth filter capacitor C12; The seventh coupling capacitor C7 is stacked on the capacitor structure of the first coupling capacitor C1 and is connected with the first coupling capacitor C1 in parallel, the eighth coupling capacitor C8 is stacked on the capacitor structure of the second coupling capacitor C2 and is connected with the second coupling capacitor C2 in parallel, the ninth coupling capacitor C9 is stacked on the capacitor structure of the third coupling capacitor C3 and is connected with the third coupling capacitor C3 in parallel, the tenth coupling capacitor C10 is stacked on the capacitor structure of the fourth coupling capacitor C4 and is connected with the fourth coupling capacitor C4 in parallel, the eleventh filtering capacitor C11 is stacked on the capacitor structure of the fifth filtering capacitor C5 and is connected with the fifth filtering capacitor C5 in parallel, and the twelfth filtering capacitor C12 is stacked on the capacitor structure of the sixth filtering capacitor C6 and is connected with the sixth filtering capacitor C6 in parallel.
9. A drive circuit comprising a two-stage charge pump circuit as claimed in any one of claims 1 to 8.
10. An electronic device comprising a two-stage charge pump circuit as claimed in any one of claims 1 to 8.

Description

Two-stage charge pump circuit, driving circuit and electronic equipment Technical Field The invention belongs to the technical field of charge pump circuit design, and particularly relates to a two-stage charge pump circuit, a driving circuit and electronic equipment. Background In a motor driving circuit, an H-bridge is generally adopted as a driving stage, the H-bridge is generally formed by sampling four NMOSFETs (metal oxide semiconductor field effect transistors), and in order to ensure that the high-side NMOSFET can be effectively turned on, the driving voltage of the high-side input of the H-bridge needs to be improved. A common method for increasing the driving voltage is to use a Charge pump circuit (Charge pump circuit), in order to save the area of a chip and power consumption, a two-stage cross-coupled Charge pump circuit is often used for the first-stage capacitor, and a MOS capacitor is usually used for the first-stage capacitor, and the withstand voltage of the MOS capacitor is consistent with that of the same type of MOS device, however, since the second-stage driving voltage may exceed that of the MOS capacitor, a MOM capacitor capable of withstanding high voltage is often needed, the MOM capacitor has a small density and needs a larger area to realize a required capacitance value, or a higher MIM capacitor has a withstand voltage which can meet the requirement and has a smaller area ratio than that of MOM, but the mask layer number is increased. Obviously, the prior art lacks the MOS electric capacity that both can let second level electric capacity use first level electric capacity, can solve the withstand voltage problem of second level electric capacity again, can also compromise the device area of occupation and can not increase the effective technical scheme of MASK layer number. Accordingly, the prior art is subject to improvement and development. Disclosure of Invention The invention aims to provide a two-stage charge pump circuit, a driving circuit and electronic equipment, and aims to solve the defects of the two-stage charge pump circuit in the aspects of voltage resistance, chip area and manufacturing cost of a second-stage capacitor in the prior art, so that the MOS capacitor can meet the voltage resistance requirement at the second stage, and the reliable operation of the circuit is ensured while the chip area is saved, and the power consumption and the manufacturing cost are reduced. The invention provides a two-stage charge pump circuit, which comprises a first-stage charge pump unit and a second-stage charge pump unit which are connected in cascade, wherein the first-stage charge pump unit is connected with an input voltage end, a first clock signal end and a second clock signal end and comprises a first-stage clock driving circuit, a first coupling capacitor and a second coupling capacitor which are connected with each other; The second-stage charge pump unit comprises a second-stage clock driving circuit, a third coupling capacitor and a fourth coupling capacitor which are connected with each other, and the voltage input end of the second-stage clock driving circuit is connected with the voltage output end of the first-stage clock driving circuit; The first coupling capacitor, the second coupling capacitor, the third coupling capacitor and the fourth coupling capacitor are all MOS capacitors. According to the two-stage charge pump circuit provided by the invention, the MOS capacitor is also adopted as the coupling capacitor in the second-stage charge pump unit, so that the problems of increased chip area or increased manufacturing cost caused by using the MOM capacitor or the MIM capacitor are avoided. Through reasonable design circuit structure for MOS electric capacity also can satisfy withstand voltage requirement in the second level, effectively solved the contradiction between withstand voltage of second level electric capacity and area, the cost among the prior art, realized saving chip area, reduced consumption and manufacturing cost, guaranteed the reliable operation of circuit. In a second aspect, the present invention provides a driving circuit comprising the two-stage charge pump circuit described above. In a third aspect, the present invention provides an electronic device comprising the two-stage charge pump circuit described above. Therefore, the two-stage charge pump circuit effectively solves the defects of the two-stage charge pump circuit in the prior art in the aspects of second-stage capacitor voltage resistance, chip area and manufacturing cost. Specifically, in the prior art, the second-stage capacitor often needs to use a MOM capacitor or a MIM capacitor due to voltage-withstanding limitation, resulting in an increase in chip area or an increase in manufacturing cost. The MOS capacitor is innovatively adopted as the coupling capacitor in the second-stage charge pump unit, and the voltage withstand of the MOS capacitor is consistent with that of MOS