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CN-121984471-A - Temperature-distribution-based temperature compensation crystal oscillator wafer size configuration method and system

CN121984471ACN 121984471 ACN121984471 ACN 121984471ACN-121984471-A

Abstract

The application provides a temperature-compensated crystal oscillator wafer size configuration method and a temperature-compensated crystal oscillator wafer size configuration system based on temperature distribution, wherein the temperature-compensated crystal oscillator wafer size configuration method based on temperature distribution comprises the steps of obtaining heat transfer correlation factors of a base and a wafer; the temperature compensation crystal oscillator wafer size configuration method and system based on temperature distribution can realize high-sensitivity monitoring, low-power-consumption long-period running, flexible point distribution and remote grading alarm under a complex environment so as to improve the gas safety management level of residential areas.

Inventors

  • LIU RUI

Assignees

  • 北京无线电计量测试研究所

Dates

Publication Date
20260505
Application Date
20251208

Claims (10)

  1. 1. The temperature compensation crystal oscillator wafer size configuration method based on temperature distribution is characterized by comprising the following steps of: Acquiring heat transfer related factors of the susceptor and the wafer; optimizing a contact area of the susceptor and the wafer based on the heat transfer related factors; and configuring the target size of the wafer according to the optimized contact area and the frequency requirement of the temperature compensation crystal oscillator.
  2. 2. The method of claim 1, wherein obtaining a thermal transfer related factor for the susceptor and the wafer comprises: determining the bonding area of the structural features of the susceptor and the wafer; identifying key factors affecting heat transfer based on the conforming region; The structural features are integrated with key factors to form the heat transfer related factors.
  3. 3. The method of claim 2, wherein identifying key factors affecting heat transfer based on the conformable region comprises: Analyzing the influence trend of the geometric parameters of the bonding area on heat transfer; screening geometrical parameters with the heat transfer influence duty ratio meeting preset conditions; And determining the geometrical parameters after screening as the key factors.
  4. 4. The method of claim 1, wherein optimizing a contact area of a susceptor with a wafer based on the heat transfer related factor comprises: Determining an initial contact area of the susceptor with the wafer based on the heat transfer related factors; Setting an optimized threshold value of the contact area on the premise of ensuring the adhesive stability of the wafer; and adjusting the initial contact area according to the optimization threshold value to obtain the optimized contact area.
  5. 5. The method of claim 4, wherein adjusting the initial contact area according to the optimization threshold to obtain an optimized contact area comprises: acquiring a difference value between the initial contact area and an optimization threshold value; Determining an adjustment direction and an adjustment amplitude of the contact area based on the difference value; and correcting the initial contact area according to the adjustment direction and the adjustment amplitude to obtain the optimized contact area.
  6. 6. The method of claim 1, wherein configuring the target dimension of the wafer according to the optimized contact area in combination with the frequency requirement of the temperature compensated crystal oscillator comprises: determining a constraint range of the wafer size based on the optimized contact area; screening candidate sizes in the constraint range by combining the frequency requirement of the temperature compensation crystal oscillator; And verifying the candidate size to determine the target size of the wafer.
  7. 7. The method of claim 6, wherein determining the constraint range for the wafer size based on the optimized contact area comprises: Establishing an association relation between the contact area and the wafer size; Deducing an upper limit value and a lower limit value of each dimension size of the wafer based on the association relation; and integrating the upper limit value and the lower limit value to form a constraint range of the wafer size.
  8. 8. The method of claim 6, wherein validating the candidate size to determine a target size of the wafer comprises: Acquiring wafer temperature response characteristics corresponding to the candidate sizes; Judging whether the temperature response characteristic meets the stability requirement of the temperature compensation crystal oscillator, and if so, determining the corresponding candidate size as the target size; If not, returning to the step of screening the candidate size in the constraint range for combining the frequency requirement of the temperature compensation crystal oscillator to re-screen.
  9. 9. The method of claim 1, further comprising, prior to acquiring the heat transfer related factors of the susceptor and the wafer: And extracting characteristics of the packaging structure of the base, wherein the characteristics of the packaging structure comprise material characteristics of the base, a packaging mode of the cover plate and a groove structure of the base, and the characteristics of the packaging structure are used for assisting in acquiring heat transfer related factors of the base and the wafer.
  10. 10. A temperature compensated crystal oscillator wafer size configuration system based on temperature distribution, comprising: An acquisition module that acquires a heat transfer correlation factor of the susceptor and the wafer; An area optimization module that optimizes a contact area of the susceptor with the wafer based on the heat transfer related factors; And the configuration module is used for configuring the target size of the wafer according to the frequency requirement of the optimized contact area combined with the temperature compensation crystal oscillator.

Description

Temperature-distribution-based temperature compensation crystal oscillator wafer size configuration method and system Technical Field The application belongs to the field of debugging of crystal oscillators, and particularly relates to a temperature compensation crystal oscillator wafer size configuration method and system based on temperature distribution. Background The temperature compensation crystal oscillator is an electronic component which counteracts the influence of temperature on frequency through a compensation technology. The load capacitance of the oscillating circuit is dynamically adjusted by adopting an analog compensation method, a digital compensation method or a microcomputer compensation method through a thermosensitive network or a digital control capacitor array. Because the common crystal oscillator is greatly influenced by the ambient temperature, the temperature compensation crystal oscillator can adjust the load capacitance within a certain temperature range, so that the change of the crystal frequency along with the temperature is counteracted, and the frequency stability is realized. The temperature compensation crystal oscillator takes a quartz resonator as a main element. The size selection of the temperature compensated crystal oscillator for quartz wafers is generally based on past empirical analysis and lacks a more specific configuration method. When meeting products with different requirements, the configuration method can lead to lower qualification rate, needs repeated tests and causes waste of raw materials, so that the configuration method has a plurality of defects. Disclosure of Invention The embodiment of the application provides a temperature compensation crystal oscillator wafer size configuration method and a temperature distribution-based temperature compensation crystal oscillator wafer size configuration system, which can solve the problems that the qualification rate is low and repeated tests are needed to cause waste of raw materials when products with different requirements are met on the size selection of a quartz wafer by the conventional temperature compensation crystal oscillator. In a first aspect, a temperature-compensated crystal oscillator wafer size configuration method based on temperature distribution includes: Acquiring heat transfer related factors of the susceptor and the wafer; optimizing a contact area of the susceptor and the wafer based on the heat transfer related factors; and configuring the target size of the wafer according to the optimized contact area and the frequency requirement of the temperature compensation crystal oscillator. Optionally, obtaining a heat transfer related factor of the susceptor and the wafer includes: determining the bonding area of the structural features of the susceptor and the wafer; identifying key factors affecting heat transfer based on the conforming region; The structural features are integrated with key factors to form the heat transfer related factors. Optionally, identifying key factors affecting heat transfer based on the conforming region includes: Analyzing the influence trend of the geometric parameters of the bonding area on heat transfer; screening geometrical parameters with the heat transfer influence duty ratio meeting preset conditions; And determining the geometrical parameters after screening as the key factors. Optionally, optimizing the contact area of the susceptor and the wafer based on the heat transfer related factor includes: Determining an initial contact area of the susceptor with the wafer based on the heat transfer related factors; Setting an optimized threshold value of the contact area on the premise of ensuring the adhesive stability of the wafer; and adjusting the initial contact area according to the optimization threshold value to obtain the optimized contact area. Optionally, adjusting the initial contact area according to the optimization threshold to obtain the optimized contact area includes: acquiring a difference value between the initial contact area and an optimization threshold value; Determining an adjustment direction and an adjustment amplitude of the contact area based on the difference value; and correcting the initial contact area according to the adjustment direction and the adjustment amplitude to obtain the optimized contact area. Optionally, configuring the target size of the wafer according to the optimized contact area and the frequency requirement of the temperature compensation crystal oscillator includes: determining a constraint range of the wafer size based on the optimized contact area; screening candidate sizes in the constraint range by combining the frequency requirement of the temperature compensation crystal oscillator; And verifying the candidate size to determine the target size of the wafer. Optionally, determining the constraint range of the wafer size based on the optimized contact area includes: Establishing an association relation