CN-121984526-A - Ka frequency channel emission front end piece formula subassembly and device

Abstract

The invention belongs to the technical field of microwaves, and discloses a Ka frequency band emission front-end chip component and a device. The invention comprises a cover plate, a shell, an LTCC multilayer board, an isolator, a power amplifier, a Ka frequency band power division network, a high-low frequency mixed loading connector and an SMP high-frequency connector, wherein the cover plate and the shell realize airtight packaging in a laser seal welding packaging mode, the isolator, the power amplifier, the Ka frequency band power division network and the high-low frequency mixed loading connector are welded on the LTCC multilayer board, the LTCC multilayer board is welded on the surface of an inner cavity of the shell, and the SMP high-frequency connector is directly welded with the shell. The invention can meet the performance requirement of the antenna system on the unidirectional interconnection of the input and output of the transmitting front-end component, and solves the problems of sheet structure integration, interconnection design, encapsulation, blind insertion design and heat dissipation of the transmitting front-end component by adopting the advantages of novel packaging materials and blind insertion structures, thereby meeting the engineering application requirement of the Ka frequency band antenna system.

Inventors

• Zhang Diequn
• Guan Yinxin
• SHEN LI
• YIN HAOYU
• ZHONG JIANFENG
• JIANG SHOULI
• CHEN ZAIMING

Assignees

• 中国电子科技集团公司第十四研究所

Dates

Publication Date

20260505

Application Date

20260129

Claims (7)

1. 1. The front-end chip component for Ka frequency band emission is characterized by comprising a cover plate, a shell, an LTCC multilayer board, an isolator, a power amplifier, a Ka frequency band power division network, a high-low frequency mixed connector and an SMP high-frequency connector; The cover plate and the shell realize airtight packaging in a laser seal welding packaging mode; an isolator, a power amplifier, a Ka frequency band power division network and a high-low frequency mixed connector are welded on the LTCC multilayer board; The LTCC multilayer plate is welded on the surface of the inner cavity of the shell; The SMP high frequency connector is welded directly to the housing.
2. 2. The Ka-band emission front-end chip assembly of claim 1, wherein no plating is provided on the surface of a cover plate, the cover plate is made of an aluminum-silicon composite material, the silicon content is 25% -27%, and the total content of impurities including iron is less than 0.3%.
3. 3. The Ka-band emission front-end chip assembly according to claim 1, wherein the case is a high-silicon aluminum alloy composite material, and the outer surface of the case and the inner cavity surface of the case are gold-plated except for the surface of the portion of the case where the case and the cover plate are laser-sealed and welded without plating.
4. 4. The Ka-band transmitting front-end chip assembly of claim 3, wherein the shell has a silicon content ranging from 48% to 52% and a total content of impurities including iron of less than 0.3%.
5. 5. The Ka-band emission front-end chip assembly of claim 1, wherein the power amplifier comprises a power amplifier chip and a diamond aluminum carrier, wherein the power amplifier chip is welded on the diamond aluminum carrier through lead-free solder, and the diamond aluminum carrier is welded on the shell to form a heat dissipation channel with the cover plate.
6. 6. The Ka-band transmission front-end chip assembly of claim 5, wherein the high-low frequency hybrid connector comprises an SMP high-frequency connector and a 25-core low-frequency connector, the SMP high-frequency connector serving as an input for radio frequency signals, the 25-core low-frequency connector powering the power amplifier chip.
7. 7. An apparatus for transmitting a front-end chip module using the Ka band as set forth in any one of claims 1 to 6.

Description

Ka frequency channel emission front end piece formula subassembly and device Technical Field The invention mainly relates to the technical field of microwaves, in particular to a Ka frequency band emission front-end chip component and a device. Background The satellite cloud second generation global communication system consists of a plurality of small satellite constellations and a global data service processing center, has multiple functions of mobile communication, broadband internet access and the like, and comprises equipment such as an inter-satellite communication terminal, a solar battery and the like besides Ka frequency band millimeter wave antennas. And the antenna comprises a transmitting array and a receiving array. Therefore, an advanced phased array integrated architecture concept is required to be adopted, high integration, light and thin design is developed on an antenna system, and the weight and the section thickness of the antenna are reduced, so that the requirements on a carrying platform and the transmission cost of satellites are reduced, and the structural integration design of a front-end chip type component of the Ka-band antenna system becomes a difficult problem. The size and weight of the front transmitting end of the Ka-band antenna system are directly affected, so that structural integration of a chip component of the front transmitting end of the Ka-band antenna system is needed to solve the problems of large array plane caliber of the antenna system, limited multi-loading capacity of active equipment and the like. Disclosure of Invention The invention provides a Ka frequency band transmitting front-end sheet type component and a device, which aim to meet the performance requirement of an antenna system on unidirectional input and output interconnection of the transmitting front-end component, and solve the problems of sheet type structure integration, interconnection design, encapsulation, blind insertion design and heat dissipation of the transmitting front-end component by adopting the advantages of novel encapsulation materials and blind insertion structures, so as to meet the engineering application requirement of the Ka frequency band antenna system. In order to achieve the above purpose, the invention provides a Ka frequency band emission front end chip component, which comprises a cover plate, a shell, an LTCC multilayer board, an isolator, a power amplifier, a Ka frequency band power division network, a high-low frequency mixed connector and an SMP high-frequency connector; The cover plate and the shell realize airtight packaging in a laser seal welding packaging mode; an isolator, a power amplifier, a Ka frequency band power division network and a high-low frequency mixed connector are welded on the LTCC multilayer board; The LTCC multilayer plate is welded on the surface of the inner cavity of the shell; The SMP high frequency connector is welded directly to the housing. Furthermore, the surface of the cover plate is free of any coating, the cover plate is made of aluminum-silicon composite material, the silicon content is 25% -27%, and the total content of impurities including iron is less than 0.3%. Furthermore, the shell is made of a high silicon aluminum alloy composite material, the surface of the part of the shell, which is subjected to laser seal welding with the cover plate, is not plated, and the outer surface of the shell and the inner cavity surface of the shell are plated with gold. Further, the silicon content of the shell ranges from 48% to 52%, and the total content of impurities including iron is less than 0.3%. Further, the power amplifier comprises a power amplifier chip and a diamond aluminum carrier, wherein the power amplifier chip is welded on the diamond aluminum carrier through lead-free solder, and then the diamond aluminum carrier is welded on the shell, and a heat dissipation channel is formed between the power amplifier chip and the cover plate. Further, the high-low frequency mixed connector comprises an SMP high-frequency connector and a 25-core low-frequency connector, wherein the SMP high-frequency connector is used as the input of radio frequency signals, and the 25-core low-frequency connector supplies power for the power amplifier chip. The invention also provides a device for transmitting the front-end chip component by using the Ka frequency band, which comprises the front-end chip component transmitted by using the Ka frequency band. The invention has the beneficial effects that (1) the Ka frequency band emission front-end chip component comprises an isolator, a power amplifier, a power division network, a related connector and other constituent elements. The power amplifier is a power device with larger heat generation, the bare chip is welded on the diamond aluminum carrier through welding flux, and then the diamond aluminum carrier is welded on the high silicon aluminum alloy composite shell, and a rapid heat dissipation ch