CN-121984528-A - K wave band receiving assembly chip circuit device

CN121984528ACN 121984528 ACN121984528 ACN 121984528ACN-121984528-A

Abstract

The invention provides a chip circuit device of a K-band receiving assembly, which belongs to the technical field of radio frequency integrated microsystems and comprises a gallium arsenide low-noise amplifying circuit and a silicon-based amplitude-phase multifunctional circuit, wherein the gallium arsenide low-noise amplifying circuit is positioned at the front end of a receiving link, the silicon-based amplitude-phase multifunctional circuit comprises a driving amplifying circuit, a numerical control attenuating circuit, a numerical control phase shifting circuit and a power distribution circuit, the output end of the gallium arsenide low-noise amplifying circuit is connected with the input end of the driving amplifying circuit, the output end of the driving amplifying circuit is connected with the input end of the numerical control attenuating circuit, the output end of the numerical control attenuating circuit is connected with the input end of the driving amplifying circuit, the output end of the driving amplifying circuit is connected with the input end of the numerical control phase shifting circuit, and the output end of the power distribution circuit is connected with a COM end. The invention simplifies the complex circuit, reduces the occupation of resources by large-scale simulation, shortens the simulation time and adapts to different K wave band scenes.

Inventors

Peng Dieyao
ZHAO XUEZHEN
CUI JINGYU
LIU JUN
SU GUODONG
HONG LI
LI XIAO
YANG NING
WANG ZHIQIANG

Assignees

中国电子科技集团公司信息科学研究院
杭州电子科技大学

Dates

Publication Date: 20260505
Application Date: 20251205

Claims (10)

1. A K-band receive assembly chip circuit device, the device comprising: a gallium arsenide low noise amplifying circuit and a silicon-based amplitude-phase multifunctional circuit; the gallium arsenide low-noise amplifying circuit is positioned at the front end of the receiving link; The silicon-based amplitude-phase multifunctional circuit comprises a driving amplifying circuit, a numerical control attenuation circuit, a numerical control phase shifting circuit and a power distribution circuit; The output end of the gallium arsenide low-noise amplifying circuit is connected with the input end of the driving amplifying circuit, the output end of the driving amplifying circuit is connected with the input end of the numerical control attenuation circuit, the output end of the numerical control attenuation circuit is connected with the input end of the driving amplifying circuit, the output end of the driving amplifying circuit is connected with the input end of the numerical control phase shifting circuit, the output end of the numerical control phase shifting circuit is connected with the input end of the power distribution circuit, and the output end of the power distribution circuit is connected with the COM end.
2. The circuit device of the K-band receiving assembly chip of claim 1, wherein the signal transmission path of the device is that an external radio frequency signal is input and amplified by a gallium arsenide low noise amplifying circuit, sequentially flows through a driving amplifying circuit, a digital control attenuation circuit and a digital control phase shifting circuit for signal processing, and is output to a COM end by a power distribution circuit.
3. The K-band receive assembly chip circuit apparatus of claim 1, wherein the gallium arsenide low noise amplification circuit comprises: The multi-stage amplifying device, the impedance matching network, the bias circuit and the filter circuit; After the external radio frequency signal is input into the gallium arsenide low-noise amplifying circuit, the signal transmission efficiency is maximized through the impedance matching network, then the external radio frequency signal enters the multistage amplifying device for amplifying and reducing self noise, the biasing circuit is used for providing stable biasing, the filtering circuit is used for filtering interference, and the processed signal is output into the silicon-based amplitude-phase multifunctional circuit.
4. The K-band receiving module chip circuit apparatus according to claim 3, wherein the gaas low noise amplifier circuit is configured with an RFin rf input terminal, an RFout rf output terminal, and a drain voltage terminal VD, a gate voltage terminal VG; The bias circuit comprises a third resistor R3, a fourth resistor R4 and a third capacitor C3, wherein the first end of the third resistor R3 and the fourth resistor R4 after being connected in series is connected with the first end of the second inductor L2 and the second end of the first capacitor C1, the second end of the second capacitor C2 is connected with the grid electrode of the first stage amplifying device, the first end of the second capacitor C2 is connected with the second end of the third resistor R3, the second end of the third inductor L3 is connected with the second end of the first stage amplifying device, and the drain electrode of the first stage amplifying device is connected with the grid electrode of the second stage amplifying device through a fourth capacitor C4, a fifth inductor L5 and a sixth capacitor C6; the amplifying devices at all stages are coupled through a capacitor, and each amplifying device at all stages is matched with an impedance matching network consisting of a corresponding resistor, an inductor and a grounding capacitor; The drain voltage end VD is connected with the drain electrode of each stage of amplifying period through a resistance inductance branch, and the gate voltage end VG is connected with the gate electrode of each stage of amplifying device through an inductance to form a bias circuit; The multistage amplifying device is connected with the input end of the filter circuit, the output end of the filter circuit is connected with the RFout radio frequency output end through a seventeenth inductor L17, a seventeenth capacitor C17 and an eighteenth inductor L18, and the filter circuit comprises a twelfth inductor L12, a thirteenth inductor L13, a fourteenth inductor L14, a fifteenth inductor L15, a sixteenth inductor L16, a seventeenth inductor L17, an eighteenth inductor L18, a fourteenth capacitor C14, a fifteenth capacitor C15, a sixteenth capacitor C16, a seventeenth capacitor C17 and an eighteenth capacitor C18.
5. The K-band receiving assembly chip circuit apparatus of claim 1, wherein the drive amplification circuit is configured to amplify the front-stage low-power rf signal to an operating level driving the back-stage load while providing output power with low distortion and conjugate matching with impedances of the front-stage and back-stage circuits to optimize return loss performance.
6. The K-band reception component chip circuit apparatus according to claim 5, wherein the drive amplification circuit includes a first stage unit and a second stage unit; the driving amplifying circuit is provided with an RFin radio frequency input end and an RFout radio frequency output end, and is also provided with a drain voltage end VD and a grid voltage end VG; The RFin radio frequency input end is connected with the first end of a twenty-first capacitor C20, the second end of the twenty-first capacitor C20 is divided into two paths, one path is connected with a nineteenth inductor L19, the other path is connected with the first end of a twenty-first capacitor C21, the second end of the twenty-first capacitor C21 is connected with a thirteenth resistor R13 and the first end of a twenty-second capacitor C22 which are connected in parallel, and the second ends of the thirteenth resistor R13 and the twenty-second capacitor C22 which are connected in parallel are respectively connected with the first end of a fourteenth resistor R14 and the grid electrode of an amplifying device of a first-stage unit; The drain voltage end VD is connected with the second end of the twenty-first inductor L21, and the first end of the twenty-first inductor L21 is connected with the drain of the amplifying device of the first-stage unit; The drain electrode of the amplifying device of the first stage unit is connected with the first end of a twenty-third capacitor C23, the second end of the twenty-third capacitor C23 is connected with the first end of a twenty-fourth resistor C24, the second end of the twenty-fourth resistor C24 is connected with the first ends of a fifteenth resistor R15 and a twenty-fifth capacitor C25 which are connected in parallel, and the second ends of the fifteenth resistor R15 and the twenty-fifth capacitor C25 which are connected in parallel are respectively connected with the first end of a sixteenth resistor R16 and the grid electrode of the amplifying device of the second stage unit; The gate voltage end VG is connected with the second end of the twenty-second inductor L22, the first end of the twenty-second inductor L22 is connected with the second end of the sixteenth resistor R16, the first end of the twenty-third inductor L23 is connected with the drain voltage end VD, and the second end is connected with the drain of the amplifying device of the second-stage unit; The drain electrode of the amplifying device of the second stage unit is connected with the first end of the twenty-fourth inductor L24, the second end of the twenty-fourth inductor L24 is respectively connected with the second end of the twenty-sixth capacitor C26 and the first end of the twenty-fifth inductor L25, and the second end of the twenty-fifth inductor L25 is connected with the RFout radio frequency output end.
7. The K-band receiving assembly chip circuit device according to claim 1, wherein the digital control attenuation circuit is a 5-bit digital control attenuation circuit, and the digital control attenuation circuit is formed by cascading 5-bit attenuation units combined by a switch tube and a passive element, wherein the 5-bit digital control attenuation circuit is configured with an RFin radio frequency input end and an RFout radio frequency output end; The numerical control attenuation circuit selects different signal paths to generate corresponding attenuation by controlling the on-off of the switching tube.
8. The K-band receiving module chip circuit device of claim 7, wherein the attenuation unit is in the form of a switch tube plus resistor composed of lumped elements for realizing broadband attenuation, wherein 0.5dB, 1dB attenuation states adopt a T-type attenuation topology, and 2dB, 4dB, 8dB attenuation states adopt a pi-type attenuation topology.
9. The K-band receiving assembly chip circuit device according to claim 1, wherein the digital control phase shift circuit is a 6-bit digital control phase shift circuit, and the digital control phase shift circuit is formed by cascading 6-bit phase shift units formed by combining a plurality of switching tubes and passive elements, wherein the 6-bit digital control phase shift circuit is configured with an RFin radio frequency input end and an RFout radio frequency output end; the numerical control phase shifting circuit controls the on-off of the switching tube to enable signals to generate phase differences through different paths so as to realize numerical control phase shifting.
10. The K-band receiving module chip circuit device according to claim 9, wherein the phase shifting unit is in the form of a high-low pass filter composed of lumped elements for realizing wideband phase shifting, wherein the 5.625 °, 11.25 °, 22.5 °, 45 ° phase shifting states employ serial FET type and T type phase shifting topologies, and the 90 °, 180 ° phase shifting states employ switch-selective path type phase shifting topologies.

Description

K wave band receiving assembly chip circuit device Technical Field The application belongs to the technical field of radio frequency integrated microsystems, and particularly relates to a K-band receiving component chip circuit device. Background The millimeter wave front end chip is subjected to development process from discrete devices to single-function monolithic integrated circuits to multifunctional integration by the continuous progress of market demands such as radar detection and wireless communication, and the like, and is accelerated to progress towards microwave millimeter wave monolithic direction with high integration level, multiple functions and system level integration. However, with the dramatic increase in circuit scale and complexity, most of the existing circuits are difficult to break through the limitation of memory space and computation time, and cannot effectively cope with the analysis and design requirements of large networks or systems containing such high-integration integrated circuits. The K-band receiving component chip is used as a core device of the millimeter wave system, needs to integrate functions of low noise amplification, amplitude phase control and the like, and has increasingly stringent requirements on the integration level and the electrical performance. In the prior art, aiming at a K-band chip with multiple modules such as gallium arsenide low-noise amplification, silicon-based amplitude-phase multiple functions and the like, large-scale simulation needs to occupy huge calculation resources, so that the simulation time is too long and the rapid iterative design of a system circuit is seriously restricted, on the other hand, the simulation is highly dependent on a standardized element model, and the model is easy to have accuracy deviation, so that the simulation result is inconsistent with an actual hardware test result, the key performances such as signal-to-noise ratio, amplitude-phase control precision and the like of a receiving component are influenced, and the reliable design requirement of the K-band receiving system is difficult to meet. Therefore, there is a need for an efficient and accurate circuit for adapting to a K-band receiving device chip to break through the simulation resource and time limitation and solve the problems of analysis and design of large-scale complex integrated circuit systems. Disclosure of Invention The invention aims to solve the problem that analysis and design of a large complex integrated circuit system are difficult to process in the prior art, and provides a K-band receiving component chip circuit device, which comprises: a gallium arsenide low noise amplifying circuit and a silicon-based amplitude-phase multifunctional circuit; the gallium arsenide low-noise amplifying circuit is positioned at the front end of the receiving link; The silicon-based amplitude-phase multifunctional circuit comprises a driving amplifying circuit, a numerical control attenuation circuit, a numerical control phase shifting circuit and a power distribution circuit; The output end of the gallium arsenide low-noise amplifying circuit is connected with the input end of the driving amplifying circuit, the output end of the driving amplifying circuit is connected with the input end of the numerical control attenuation circuit, the output end of the numerical control attenuation circuit is connected with the input end of the driving amplifying circuit, the output end of the driving amplifying circuit is connected with the input end of the numerical control phase shifting circuit, the output end of the numerical control phase shifting circuit is connected with the input end of the power distribution circuit, and the output end of the power distribution circuit is connected with the COM end. The signal transmission path of the device is that an external radio frequency signal is input and amplified by a gallium arsenide low-noise amplifying circuit, sequentially flows through a driving amplifying circuit, a numerical control attenuation circuit and a numerical control phase shifting circuit for signal processing, and is output to a COM end by a power distribution circuit. Further, the gallium arsenide low noise amplifying circuit includes: The multi-stage amplifying device, the impedance matching network, the bias circuit and the filter circuit; After the external radio frequency signal is input into the gallium arsenide low-noise amplifying circuit, the signal transmission efficiency is maximized through the impedance matching network, then the external radio frequency signal enters the multistage amplifying device for amplifying and reducing self noise, the biasing circuit is used for providing stable biasing, the filtering circuit is used for filtering interference, and the processed signal is output into the silicon-based amplitude-phase multifunctional circuit. Further, the gallium arsenide low noise amplifying circuit is configured with an RFin