CN-121985476-A - Pulse power supply power component, wafer bearing device and semiconductor process equipment

Abstract

The application provides a pulse power supply power component, a wafer bearing device and semiconductor process equipment, which comprise a board card, a power tube, a cooling device, a dissipation element and a common mode inductor, wherein the board card is provided with a first board surface and a second board surface which are opposite to each other, the power tube is arranged on the first board surface, the cooling device is arranged on the board card and positioned on one side of the first board surface facing the power tube and is in heat conduction connection with the power tube, the dissipation element is a patch element and is arranged on the first board surface and is in heat conduction connection with the cooling device, and the common mode inductor is arranged on the second board surface, and a secondary side cable of the common mode inductor passes through the board card and is electrically connected with the dissipation element. In the structure, the common-mode inductor, the power tube and the cooling device are respectively positioned at two sides of the board card, so that the structural layout of the pulse power supply power component can be optimized, the pulse power supply power component can be arranged in the internal space of the semiconductor process equipment, and the dissipation element matched with the common-mode inductor is a patch element with smaller volume, can be arranged at the side of the cooling device and is cooled by the cooling device, and the occurrence of EMI in the internal space of the semiconductor process equipment is avoided.

Inventors

• Wang Leiyue
• WANG JINGYUAN
• LI DONGYU
• GE JUN
• SHAO WEN
• WEI GANG

Assignees

• 北京北方华创微电子装备有限公司

Dates

Publication Date

20260505

Application Date

20241014

Claims (15)

1. 1. A pulsed power supply power assembly comprising: The board card is provided with a first board surface and a second board surface which are arranged opposite to each other; the power tube is arranged on the first plate surface; The cooling device is arranged on one side of the first plate surface facing the board card and is in heat conduction connection with the power tube; The dissipation element is a patch element, is arranged on the first plate surface and is in heat conduction connection with the cooling device; And the common mode inductor is arranged on the second plate surface, and a secondary side cable of the common mode inductor passes through the plate card and is electrically connected with the dissipation element.
2. 2. The pulsed power supply assembly of claim 1, wherein the cooling device and the first plate face have a gap therebetween, and the dissipative element is a chip resistor and is disposed in the gap.
3. 3. The pulse power supply assembly of claim 1, wherein the first plate surface is further provided with a heat sink for dissipating heat from the power tube, and the cooling device is thermally connected to the heat sink.
4. 4. A pulsed electrical power assembly according to claim 3 wherein the dissipative element is a semiconductor refrigeration fin and is thermally conductively coupled to at least the heat sink.
5. 5. The pulsed electrical power supply of claim 4 wherein the semiconductor refrigeration fin is disposed between and in thermally conductive connection with both the heat sink and the cooling device.
6. 6. The pulsed electrical power supply assembly of claim 2 further comprising a thermally conductive member thermally conductively connecting the chip resistor and the cooling device.
7. 7. The pulsed electrical power module of claim 6 wherein the thermally conductive member comprises a ceramic sheet and a thermally conductive silicon pad, the ceramic sheet having a thickness in the range of 0.5 to 1mm and the thermally conductive silicon pad having a thermal conductivity in the range of 0.1 to 2w/m x k.
8. 8. The pulsed power supply of claim 2, wherein the chip resistor has a resistance ranging from 10Ω to 100deg.Ω.
9. 9. The pulsed power supply power assembly of any one of claims 1-8, wherein the common mode inductance comprises: A toroidal core; the primary side cable is a double-stranded wire and is wound on one side of the annular magnetic core; the secondary side cable is a single-stranded wire and is wound on the other side of the annular magnetic core, and the leading-out end is electrically connected with the dissipation element.
10. 10. The pulsed power supply assembly of claim 9, wherein a ratio of a number of windings of the primary side cable on the toroidal core to a number of windings of the secondary side cable on the toroidal core is 1:2.
11. 11. The pulsed power supply assembly of claim 9, wherein the pulsed power supply assembly comprises, The magnetic permeability of the annular magnetic core ranges from 10 to 1000, the specific loss coefficient at 1MHz ranges from 10 to 200, the specific loss coefficient at 15MHz ranges from 200 to 1000, the temperature coefficient ranges from 200 to 100, the resistivity ranges from 10 to 5 to 10 7, the saturation magnetic flux density ranges from 100 to 600, the residual magnetic flux density ranges from 100 to 500, the coercivity ranges from 100 to 500, the Curie temperature ranges from 300 to 1000, and the working frequency ranges from 10MHz to 100MHz; And/or the number of the groups of groups, The wire diameter range of the single wires of the primary side cable and the secondary side cable is 0.5-1 mm, and the temperature resistance is above 180 ℃; And/or the number of the groups of groups, The primary side cable is wound on one side of the annular magnetic core for 2-5 circles, and the secondary side cable is wound on the other side of the annular magnetic core in the forward direction or the reverse direction for 4-10 circles.
12. 12. The pulsed power supply assembly of claim 9, further comprising a transformer and digital isolator disposed on the second plate face and electrically connected to the primary side cable.
13. 13. The pulse power supply assembly according to claim 1, wherein the cooling device comprises a cooling block, and a diversion channel for flowing cooling liquid is formed in the cooling block; and the same cooling block is connected with a plurality of the boards so as to cool the dissipation element on each board.
14. 14. A wafer carrier apparatus comprising a chuck base, a chuck, a pulse signal generator, and a pulse source power assembly as set forth in any one of claims 1-13, wherein, The chuck is used for bearing a wafer, is arranged on the chuck base to form a containing space with the chuck base, and is internally provided with the pulse signal generator, the pulse power supply power component and the electrode; The pulse signal generator is used for generating a pulse square wave signal, and the pulse power supply power component is used for feeding the pulse square wave signal to the electrode after power amplification.
15. 15. A semiconductor processing apparatus comprising a chamber body and the pulsed power supply power assembly of any one of claims 1-13 disposed within the chamber body; or comprises a chamber body and the wafer carrier of claim 14 disposed within the chamber body.

Description

Pulse power supply power component, wafer bearing device and semiconductor process equipment Technical Field The application relates to the technical field of semiconductor equipment, in particular to a wafer carrying device of a pulse power supply power component and semiconductor process equipment. Background In the semiconductor process equipment, because of some process requirements, there are a plurality of components capable of generating electromagnetic waves with different powers located in the same space, which may cause mutual interference (Electromagnetic Interference, EMI) of high-frequency electromagnetic waves, so that a filter module is required to suppress high-frequency noise, but the existing filter module is not suitable for being installed and used in the internal space of the semiconductor process equipment due to the size and structural layout. Disclosure of Invention In view of the above, the present application provides a pulse power supply module capable of achieving suppression of high-frequency noise in an internal space of semiconductor process equipment, avoiding occurrence of EMI in the internal space. In addition, the application also provides semiconductor process equipment with the pulse power supply power component. In order to achieve the above purpose, the present application provides the following technical solutions: a pulsed power supply power assembly comprising: The board card is provided with a first board surface and a second board surface which are arranged opposite to each other; the power tube is arranged on the first plate surface; The cooling device is arranged on one side of the first plate surface facing the board card and is in heat conduction connection with the power tube; The dissipation element is a patch element, is arranged on the first plate surface and is in heat conduction connection with the cooling device; And the common mode inductor is arranged on the second plate surface, and a secondary side cable of the common mode inductor passes through the plate card and is electrically connected with the dissipation element. Optionally, in the pulse power supply assembly, a gap is formed between the cooling device and the first board surface, and the dissipation element is a chip resistor and is disposed in the gap. Optionally, in the pulse power supply power component, the first board surface is further provided with a heat sink for dissipating heat of the power tube, and the cooling device is in heat conduction connection with the heat sink. Optionally, in the pulse power supply power component, the dissipation element is a semiconductor refrigeration sheet and is at least connected with the heat dissipation sheet in a heat conduction manner. Optionally, in the pulse power supply power component, the semiconductor refrigeration sheet is disposed between the heat sink and the cooling device, and is thermally connected to both the heat sink and the cooling device. Optionally, in the pulse power supply power assembly, the pulse power supply further includes a heat conducting member thermally connected to the chip resistor and the cooling device. Optionally, in the pulse power supply power component, the heat conducting member includes a ceramic sheet and a heat conducting silicon pad, the thickness range of the ceramic sheet is 0.5-1 mm, and the heat conductivity range of the heat conducting silicon pad is 0.1-2 w/m×k. Optionally, in the pulse power supply power component, the resistance value of the chip resistor ranges from 10Ω to 100deg.Ω. Optionally, in the above pulse power supply power component, the common mode inductance includes: A toroidal core; the primary side cable is a double-stranded wire and is wound on one side of the annular magnetic core; the secondary side cable is a single-stranded wire and is wound on the other side of the annular magnetic core, and the leading-out end is electrically connected with the dissipation element. Optionally, in the pulse power supply power component, a ratio of a winding number of the primary side cable on the annular magnetic core to a winding number of the secondary side cable on the annular magnetic core is 1:2. Optionally, in the above pulse power component, the magnetic permeability of the toroidal magnetic core ranges from 10 to 1000, the specific loss coefficient at 1MHz ranges from 10 to 200, the specific loss coefficient at 15MHz ranges from 200 to 1000, the temperature coefficient ranges from 200 to 100, the resistivity ranges from 10 to 5 to 10 to 7, the saturation magnetic flux density ranges from 100 to 600, the residual magnetic flux density ranges from 100 to 500, the coercivity ranges from 100 to 500, the curie temperature ranges from 300 to 1000, and the operating frequency ranges from 10MHz to 100MHz; And/or the number of the groups of groups, The wire diameter range of the single wires of the primary side cable and the secondary side cable is 0.5-1 mm, and the temperature resistance is a