Search

CN-121985507-A - Easy3b module with improved heat dissipation performance

CN121985507ACN 121985507 ACN121985507 ACN 121985507ACN-121985507-A

Abstract

The invention discloses an easy3b module with improved heat dissipation performance, which relates to the technical field of heat dissipation of power modules and comprises a heat conduction structure, wherein a plurality of chips are integrated on the power module, the heat conduction structure is fixed on the power module, a cavity is formed in the heat conduction structure, a capillary structure and phase-change liquid are arranged in the cavity, the heat conduction structure is used for absorbing heat of the power module and the chips, a soaking structure is fixed on one side of the heat conduction structure far away from the chips and is provided with an opening towards one side of the heat conduction structure, a phase-change material is arranged at the opening and is enclosed between the soaking structure and the heat conduction structure, the phase-change material is simultaneously attached to the corresponding surfaces of the soaking structure and the heat conduction structure, and the projection of the phase-change material on the corresponding surfaces of the power module at least covers the positions of the plurality of chips. In this way, the maximum of the local maximum temperature on the power module due to the heating of the chip position can be reduced, avoiding reaching the safety threshold.

Inventors

  • DAI DUAN
  • LIU HAOSEN
  • YU SHAOLIN
  • WANG JIANING

Assignees

  • 合肥综合性国家科学中心能源研究院(安徽省能源实验室)
  • 苏州固锝电子股份有限公司

Dates

Publication Date
20260505
Application Date
20260204

Claims (10)

  1. 1. An easy3b module with improved heat dissipation performance, comprising a power module (1), wherein a plurality of chips (11) are integrated on the power module (1), and the easy3b module is characterized by further comprising: The heat conduction structure (2) is fixed on the power module (1) and is attached to the chips (11), a cavity is formed in the heat conduction structure (2), and a capillary structure (21) and phase-change liquid are arranged in the cavity, wherein the heat conduction structure (2) is used for absorbing heat of the power module (1) and the chips (11); Soaking structure (3), be fixed in one side of keeping away from chip (11) on heat conduction structure (2), and set up to the opening towards one side of heat conduction structure (2), the opening part is equipped with phase change material (31), phase change material (31) are enclosed to establish between soaking structure (3) and heat conduction structure (2), phase change material (31) simultaneously with soaking structure (3) and heat conduction structure (2) corresponding face laminating, phase change material (31) on power module (1) corresponding face the projection cover the position of a plurality of chips (11) at least.
  2. 2. An easy3b module with improved heat dissipation properties according to claim 1, characterized in that the phase change form of the phase change material (31) is a solid-liquid phase change.
  3. 3. An easy3b module with improved heat dissipation properties according to claim 2, characterized in that the phase change material (31) comprises at least a paraffin wax component.
  4. 4. An easy3b module according to claim 3, characterized in that the phase change material (31) further comprises an expanded graphite component and that the mass fraction of paraffin wax in the phase change material (31) is higher than the mass fraction of expanded graphite in the phase change material (31).
  5. 5. An easy3b module with improved heat dissipation according to claim 1, wherein a heat dissipation fan (4) is connected to the heat dissipation structure (3) at a side facing away from the heat conduction structure (2), and wherein the air flow direction formed by the heat dissipation fan (4) during operation is directed towards the heat dissipation structure (3).
  6. 6. An easy3b module with improved heat dissipation according to claim 5, characterized in that the cooling fan (4) is connected to the soaking structure (3) via a heat sink (41).
  7. 7. The easy3b module with improved heat dissipation performance as claimed in claim 6, wherein a plurality of bumps (42) are formed on the heat sink (41) on a side opposite to the heat dissipation fan (4).
  8. 8. An easy3b module with improved heat dissipation according to claim 1, characterized in that a heat conducting material (22) is applied between the heat conducting structure (2) and the power module (1).
  9. 9. The easy3b module of claim 6, wherein at least one of the heat conducting structure (2), the soaking structure (3) and the heat sink (41) is made of copper material.
  10. 10. An easy3b module with improved heat dissipation according to claim 1, characterized in that the soaking structure (3) is integrally formed with the heat conducting structure (2).

Description

Easy3b module with improved heat dissipation performance Technical Field The invention relates to the technical field of heat dissipation of power modules, in particular to an easy3b module with improved heat dissipation performance. Background The easy3b module is used as a core functional module of a power electronic system and is widely applied to voltage conversion, power driving and other scenes, and the working stability of the easy3b module directly determines the reliability of the whole machine. Along with the improvement of the power density requirements in the fields of new energy and industrial automation, the output power of the easy3b module often breaks through 50W, the local heat generation of internal power devices (such as IGBT and rectifier diode) is concentrated, and the existing heat dissipation scheme has obvious short plates: the traditional easy3b module mostly adopts a heat dissipation structure of a solid copper substrate and a patch radiator, wherein the heat conductivity coefficient of the solid copper substrate is only about 200W/(m) K) The soaking performance is poor, local hot spots of the device (such as 15-20 ℃ higher than the temperature of the periphery of an IGBT chip) cannot be rapidly dispersed, and the local hot spot temperature easily exceeds a 150 ℃ safety threshold under a high-power working condition, so that the switching loss of the device is increased, the thermal fatigue is accelerated, and even the thermal failure is caused. Disclosure of Invention The invention aims to solve the problems that the soaking performance is poor, and the thermal failure is easily caused by too high local hot spot in the existing easy3b module. In order to solve the above problems, the present invention provides an easy3b module with improved heat dissipation performance, including a power module, on which a plurality of chips are integrated, further including: The heat conducting structure is fixed on the power module and is attached to the chips, a cavity is formed in the heat conducting structure, and a capillary structure and phase-change liquid are arranged in the cavity, wherein the heat conducting structure is used for absorbing heat of the power module and the chips; the soaking structure is fixed on one side of the heat conducting structure far away from the chip, one side of the heat conducting structure is provided with an opening, the opening is provided with phase change materials, the phase change materials are enclosed between the soaking structure and the heat conducting structure, the phase change materials are attached to the corresponding surfaces of the soaking structure and the heat conducting structure at the same time, and the projection of the phase change materials on the corresponding surfaces of the power module at least covers the positions of the plurality of chips. Compared with the prior art, the easy3b module with improved heat dissipation performance has the following beneficial effects: The capillary structure and the phase-change liquid are arranged in the heat-conducting structure, when the power module is in a working state, the whole heat and the chip heat, the generated heat is transmitted to the heat-conducting structure through contact with the heat-conducting structure, a cavity is formed in the heat-conducting structure, one side of the cavity, which is close to the power module, is a high-temperature area, one side, which is far away from the power module, of the cavity is a low-temperature area, the phase-change liquid in the heat-conducting structure is synchronously warmed up along with the heat-conducting structure, phase-change occurs at a certain time, vaporization and moves to one side, which is far away from the power module, of the heat-release liquefaction in the low-temperature area, liquid is reformed, the capillary structure returns to the high-temperature area to absorb heat along with the capillary structure, the heat of the heat-conducting structure is selected at a certain time, the capillary structure absorbs the heat from the power module, but the local temperature is too high due to the fact that the chip is large, the thermal insulation structure is arranged in the heat of the heat-conducting structure, the surface temperature of the heat-conducting structure is different, the phase-change material is projected on the corresponding surface of the power module along with the heat-conducting structure, the temperature of the chip is at least covered on the corresponding surface of the heat-change structure, the chip is at the high temperature, the corresponding heat is not transferred to the heat to the chip, and the heat is at the local heat is not transferred to the heat of the heat-conducting structure, and the chip is at the maximum temperature is different from the heat-release area, and the heat is different from the heat-conducting structure to the heat-conducting structure. As a further scheme of the invention,