CN-121985541-A - MIM capacitor and MIM capacitor manufacturing method

CN121985541ACN 121985541 ACN121985541 ACN 121985541ACN-121985541-A

Abstract

The application relates to the technical field of semiconductors, in particular to an MIM capacitor and a preparation method of the MIM capacitor, wherein the MIM capacitor comprises a base structure, a top metal, a bottom metal and an MIM structure; the bottom metal is positioned in the base structure and close to the bottom surface of the base structure, and the top metal is positioned on the surface of the base structure; the MIM structure is arranged on the first protection layer of the hollowed-out area, and the MIM capacitor is formed by the MIM structure, the first protection layer, the top metal, the base structure and the bottom metal. According to the application, the MIM capacitor is arranged on the top metal, so that the complexity of metal wiring can be effectively simplified, and the chip integration level can be improved.

Inventors

QIU SHANSHAN
XIONG PENG
CHEN YINGJIE
XU LI

Assignees

广州增芯科技有限公司

Dates

Publication Date: 20260505
Application Date: 20260205

Claims (10)

1. The MIM capacitor is characterized by comprising a base structure, a top metal, a bottom metal and an MIM structure; The bottom metal is positioned in the base structure and close to the bottom surface of the base structure, and the top metal is positioned on the surface of the base structure; the top metal is provided with a hollowed-out area, and a first protection layer is covered on the bottom surface, the side wall and the top metal of the hollowed-out area; The MIM structure is arranged on the first protective layer of the hollowed-out area, and the MIM capacitor is formed by the MIM structure, the first protective layer, the top metal, the base structure and the bottom metal.
2. The MIM capacitor according to claim 1, wherein the MIM structure comprises a lower electrode layer, a dielectric layer, and an upper electrode layer, which are stacked in that order; The substrate structure is provided with a first metal connecting hole and a second metal connecting hole, one end of the first metal connecting hole is electrically connected with the lower electrode layer, the other end of the first metal connecting hole is electrically connected with the bottom metal, and one end of the second metal connecting hole is electrically connected with the bottom metal, and the other end of the second metal connecting hole is electrically connected with the top metal.
3. The MIM capacitor according to claim 2 further comprising a second protective layer covering the upper electrode layer and the first protective layer, the second protective layer having a first via and a second via therethrough, the first via being in communication with the upper electrode layer, the second via also extending through the first protective layer and being in communication with the top layer metal, the first via and the second via each having an extraction structure therein.
4. The MIM capacitor of claim 3, further comprising an insulating paste on said second protective layer; The extraction structures are also positioned in the insulating glue and protrude out of the surface of the insulating glue, the first through holes, the second through holes and the extraction structures in the insulating glue are solder, and the extraction structures protruding out of the insulating glue are bumps.
5. A method for fabricating a MIM capacitor comprising: Providing a substrate structure, wherein a bottom layer of metal is arranged in the substrate structure and close to the bottom surface of the substrate structure, and a top layer of metal is arranged on the upper surface of the substrate structure; patterning and etching the top metal to form a hollowed-out area exposing the substrate structure; depositing a first protective layer on the top metal, wherein the first protective layer forms a recess at the hollow area; Depositing a MIM structure layer on the first protection layer; And grinding the MIM structure layer until the first protective layer is exposed to form the MIM structure positioned in the hollowed-out area.
6. The method of claim 5, wherein prior to depositing a MIM structure layer on the first protective layer, the method comprises: and preparing a first metal connecting hole in the first protection layer in the hollowed-out area and the substrate structure under the hollowed-out area, wherein the first metal connecting hole is connected with the bottom layer metal.
7. The method of claim 6, wherein depositing a MIM structure layer on the first protective layer comprises: And sequentially depositing a lower electrode layer, a dielectric layer and an upper electrode layer on the first protective layer, wherein the lower electrode layer is connected with the first metal connecting hole.
8. The method of claim 5, wherein after forming the MIM structure in the hollowed-out region, the method further comprises: Depositing a second protective layer on the first protective layer, the second protective layer also covering the MIM structure; Forming a first through hole penetrating through the second protective layer to the MIM structure by etching; and leading-out structures are respectively arranged in the first through hole and the second through hole.
9. The method for manufacturing the MIM capacitor according to claim 8, wherein the disposing extraction structures in the first via and the second via, respectively, comprises: Depositing a bottom metal layer in the first through hole and the second through hole; Depositing solder on the bottom metal layer; and depositing an insulating glue covering the solder, wherein the solder is provided with a bump protruding out of the insulating glue.
10. The method for manufacturing the MIM capacitor according to any one of claims 5 to 9, wherein providing a base structure, wherein a bottom metal layer is provided near a bottom surface of the base structure, and wherein a top metal layer is provided on an upper surface of the base structure, comprises: And a second metal connecting hole with one end electrically connected with the bottom metal and the other end electrically connected with the top metal is arranged in the base structure.

Description

MIM capacitor and MIM capacitor manufacturing method Technical Field The application relates to the technical field of semiconductors, in particular to an MIM capacitor and a preparation method of the MIM capacitor. Background In existing integrated circuit fabrication techniques, MIM capacitors are typically integrated between metal interconnect layers, such as by disposing MIM capacitors between bottom metal wiring and top metal wiring, and patterning upper and lower electrodes and high-k dielectric layers by additional photolithography and etching processes. Such schemes not only occupy valuable metal interconnect resources in highly integrated devices, limiting the flexibility and integration density of chip routing, but also significantly increasing process complexity and manufacturing costs by introducing multiple masking steps. Disclosure of Invention The application aims to provide an MIM capacitor, which is arranged on top of top metal, so that not only can the complexity of metal wiring be effectively simplified, but also the chip integration level can be improved. The application further aims to provide a preparation method of the MIM capacitor, which does not need to introduce a plurality of mask processes in preparation of the MIM structure, and effectively reduces the process difficulty and the manufacturing cost. The application is realized in the following way: In a first aspect, the present application provides a MIM capacitor comprising a base structure, a top metal, a bottom metal, and a MIM structure; The bottom metal is positioned in the base structure and close to the bottom surface of the base structure, and the top metal is positioned on the surface of the base structure; the top metal is provided with a hollowed-out area, and a first protection layer is covered on the bottom surface, the side wall and the top metal of the hollowed-out area; The MIM structure is arranged on the first protective layer of the hollowed-out area, and the MIM capacitor is formed by the MIM structure, the first protective layer, the top metal, the base structure and the bottom metal. As an alternative embodiment, the MIM structure includes a lower electrode layer, a dielectric layer, and an upper electrode layer that are sequentially stacked; The substrate structure is provided with a first metal connecting hole and a second metal connecting hole, one end of the first metal connecting hole is electrically connected with the lower electrode layer, the other end of the first metal connecting hole is electrically connected with the bottom metal, and one end of the second metal connecting hole is electrically connected with the bottom metal, and the other end of the second metal connecting hole is electrically connected with the top metal. The semiconductor device further comprises a second protective layer covering the upper electrode layer and the first protective layer, wherein the second protective layer is provided with a first through hole and a second through hole which penetrate through the second protective layer, the first through hole is communicated with the upper electrode layer, the second through hole also penetrates through the first protective layer and is communicated with the top layer metal, and extraction structures are respectively arranged in the first through hole and the second through hole. As an alternative embodiment, the protective layer further comprises an insulating adhesive positioned on the second protective layer; The extraction structures are also positioned in the insulating glue and protrude out of the surface of the insulating glue, the first through holes, the second through holes and the extraction structures in the insulating glue are solder, and the extraction structures protruding out of the insulating glue are bumps. In a second aspect, the present application provides a method for preparing a MIM capacitor, comprising: Providing a substrate structure, wherein a bottom layer of metal is arranged in the substrate structure and close to the bottom surface of the substrate structure, and a top layer of metal is arranged on the upper surface of the substrate structure; patterning and etching the top metal to form a hollowed-out area exposing the substrate structure; depositing a first protective layer on the top metal, wherein the first protective layer forms a recess at the hollow area; Depositing a MIM structure layer on the first protection layer; And grinding the MIM structure layer until the first protective layer is exposed to form the MIM structure positioned in the hollowed-out area. As an alternative embodiment, the method includes, before depositing the MIM structure layer on the first protective layer: and preparing a first metal connecting hole in the first protection layer in the hollowed-out area and the substrate structure under the hollowed-out area, wherein the first metal connecting hole is connected with the bottom layer metal. As an alternative embod