CN-121985549-A - GaN-based HEMT device and preparation method thereof

CN121985549ACN 121985549 ACN121985549 ACN 121985549ACN-121985549-A

Abstract

The invention discloses a GaN-based HEMT device and a preparation method thereof, wherein the preparation method comprises the following steps of providing a growth substrate; preparing a two-dimensional insulating material layer on a growth substrate, preparing a GaN-based epitaxial structure on the two-dimensional insulating material layer based on Van der Waals epitaxial growth, wherein the GaN-based epitaxial structure comprises a channel layer and a barrier layer which are sequentially laminated on the two-dimensional insulating material layer, providing a heat dissipation substrate, bonding the heat dissipation substrate on the surface of one side of the GaN-based epitaxial structure, which is far away from the growth substrate, and stripping the growth substrate. According to the invention, the two-dimensional insulating material layer is prepared on the growth substrate, and then the epitaxial structure is prepared on the two-dimensional insulating material layer, so that the problem of induced electric leakage of the surface state of the growth substrate is conveniently solved, and the characteristic that the two-dimensional insulating material layer is easy to peel is utilized, so that the complete peeling and recycling of the expensive growth substrate are realized, the manufacturing cost is greatly reduced, and meanwhile, the performance of the GaN-based HEMT device is further improved.

Inventors

LIANG TIANHUI
LU XIAOMING
RUI FANG
Ling Xiaolun

Assignees

中国科学院苏州纳米技术与纳米仿生研究所

Dates

Publication Date: 20260505
Application Date: 20260227

Claims (10)

1. The preparation method of the GaN-based HEMT device is characterized by comprising the following steps of: Providing a growth substrate; Preparing a two-dimensional insulating material layer on a growth substrate; Preparing a GaN-based epitaxial structure on the two-dimensional insulating material layer based on van der Waals epitaxial growth, wherein the GaN-based epitaxial structure comprises a channel layer and a barrier layer which are sequentially laminated on the two-dimensional insulating material layer; Providing a heat dissipation substrate, and bonding the heat dissipation substrate on the surface of one side of the GaN-based epitaxial structure away from the growth substrate; And stripping the growth substrate.
2. The method of manufacturing a GaN-based HEMT device of claim 1, wherein the step of peeling the growth substrate comprises: Breaking Van der Waals force between layers of the two-dimensional insulating material by using a stripping process, so that part of the two-dimensional insulating material layer is stripped from the GaN-based epitaxial structure along with the growth substrate, and part of the two-dimensional insulating material layer is reserved on the surface of one side of the GaN-based epitaxial structure, which is far away from the heat dissipation substrate; And cleaning the stripped growth substrate, and removing the two-dimensional insulating material layer on the surface.
3. The method of manufacturing a GaN-based HEMT device of claim 2, further comprising, after the step of peeling the growth substrate: And taking the second material layer as a gate dielectric layer, and preparing a gate on the second material layer.
4. The method of manufacturing a GaN-based HEMT device according to any one of claims 1 or 2, further comprising, after the step of peeling the growth substrate: And preparing a source electrode and a drain electrode on the GaN-based epitaxial structure, wherein the source electrode and the drain electrode are respectively and electrically connected with the barrier layer.
5. The method for manufacturing the GaN-based HEMT device according to claim 1, wherein the two-dimensional insulating material layer is any one of a two-dimensional boron nitride layer, a two-dimensional boron fluoride layer, a two-dimensional carbon nitride layer, and an insulating-treated two-dimensional graphene layer.
6. The method for manufacturing the GaN-based HEMT device according to claim 1, wherein the growth substrate is any one of an aluminum nitride substrate, a gallium nitride substrate, a silicon carbide substrate, or a sapphire substrate.
7. The method for manufacturing the GaN-based HEMT device of claim 1, wherein the heat-dissipating substrate is any one of a diamond substrate, a copper-molybdenum alloy substrate, or a silicon substrate integrated with a micro-fluid.
8. The method of manufacturing a GaN-based HEMT device of claim 1, wherein the growth substrate is stripped by a laser-assisted stripping process, a chemical-assisted stripping process, or a thermal-assisted stripping process.
9. A GaN-based HEMT device, characterized in that it is prepared by the preparation method of any one of claims 1 to 8.
10. The GaN based HEMT device of claim 9, wherein the GaN based HEMT device is an N-polar GaN based HEMT device.

Description

GaN-based HEMT device and preparation method thereof Technical Field The invention belongs to the technical field of semiconductor devices, and particularly relates to a GaN-based HEMT device and a preparation method thereof. Background Gallium nitride-based HEMT devices (High Electron Mobility Transistors, HEMT) are representative of wide bandgap power semiconductor devices, and have great potential in high frequency power applications. However, in the prior art, in order to pursue high crystal quality when preparing a GaN-based HEMT device, an expensive aluminum nitride substrate or gallium nitride substrate is often used, but such substrate can cause substrate induced leakage, which seriously affects the reliability and production yield of the prepared GaN-based HEMT device. Meanwhile, in the conventional manufacturing method, a high-performance substrate such as an aluminum nitride substrate or a gallium nitride substrate, which is costly, is used as a disposable consumable product, resulting in high production costs. And, even if such a substrate is used, the introduction of high dislocation density is unavoidable in the process of manufacturing a GaN-based HEMT device by heteroepitaxy, limiting the upper limit of device performance. In addition, all main stream GaN-based HEMT devices in the prior art are Ga-polarity GaN-based HEMT devices, the heat dissipation path of the normal mounting structure is long, the heat resistance is large, the power density of the devices is severely limited, and the power density is close to the physical limit in the aspects of realizing lower on-resistance, better gate control and reliable normally-off operation. In contrast, although N-polar GaN-based HEMT devices exhibit potential advantages in the physical properties of the devices, direct epitaxial growth of high quality N-polar GaN materials is extremely difficult, rendering them impractical. Therefore, in view of the above technical problems, it is necessary to provide a GaN-based HEMT device and a method for manufacturing the same. Disclosure of Invention The invention aims to provide a GaN-based HEMT device and a preparation method thereof, which can solve the problem of induced leakage of a growth substrate and reduce production cost. In order to achieve the above object, an embodiment of the present invention provides the following technical solution: the preparation method of the GaN-based HEMT device is characterized by comprising the following steps of: Providing a growth substrate; Preparing a two-dimensional insulating material layer on a growth substrate; Preparing a GaN-based epitaxial structure on the two-dimensional insulating material layer based on van der Waals epitaxial growth, wherein the GaN-based epitaxial structure comprises a channel layer and a barrier layer which are sequentially laminated on the two-dimensional insulating material layer; Providing a heat dissipation substrate, and bonding the heat dissipation substrate on the surface of one side of the GaN-based epitaxial structure away from the growth substrate; And stripping the growth substrate. In one embodiment, the step of stripping the growth substrate comprises: Breaking Van der Waals force between layers of the two-dimensional insulating material by using a stripping process, so that part of the two-dimensional insulating material layer is stripped from the GaN-based epitaxial structure along with the growth substrate, and part of the two-dimensional insulating material layer is reserved on the surface of one side of the GaN-based epitaxial structure, which is far away from the heat dissipation substrate; And cleaning the stripped growth substrate, and removing the two-dimensional insulating material layer on the surface. In one embodiment, after the step of peeling the growth substrate, further comprising: And taking the second material layer as a gate dielectric layer, and preparing a gate on the second material layer. In one embodiment, after the step of peeling the growth substrate, further comprising: And preparing a source electrode and a drain electrode on the inverted epitaxial structure, wherein the source electrode and the drain electrode are respectively and electrically connected with the barrier layer. In an embodiment, the two-dimensional insulating material layer is any one of a two-dimensional boron nitride layer, a two-dimensional boron fluoride layer, a two-dimensional carbon nitride layer and an insulated two-dimensional graphene layer. In an embodiment, the growth substrate is any one of an aluminum nitride substrate, a gallium nitride substrate, a silicon carbide substrate, or a sapphire substrate. In an embodiment, the heat dissipation substrate is any one of a diamond substrate, a copper-molybdenum alloy substrate, or a silicon substrate integrated with microfluid. In one embodiment, the growth substrate is stripped by a laser assisted stripping process, a chemical assisted stripping process, or a thermal as