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CN-121985571-A - In (In)2Se3Wurtzite ferroelectric semiconductor material and preparation method thereof

CN121985571ACN 121985571 ACN121985571 ACN 121985571ACN-121985571-A

Abstract

The invention discloses an In 2 Se 3 wurtzite ferroelectric semiconductor material and a preparation method thereof, wherein a two-dimensional van der Waals layered In 2 Se 3 semiconductor is used as a precursor, and the phase change from two-dimensional layered In 2 Se 3 to non-layered 6H-type or 3R-type In 2 Se 3 is regulated and controlled by adopting an electron beam irradiation, laser irradiation or heating mode, so that a non-layered In 2 Se 3 ferroelectric with a wurtzite structure is obtained through electric field regulation and control. The novel wurtzite In 2 Se 3 material obtained by the method has a three-dimensional non-central symmetrical structure, the theoretical predicted polarization intensity is more than 50 mu C/cm 2 , and the material has excellent thickness controllability and silicon-based compatibility. The novel In 2 Se 3 wurtzite ferroelectric semiconductor material obtained by the method has the advantages of simple composition, strong polarization intensity, low coercive field, proper band gap, silicon-based compatibility and the like, and is an excellent candidate material for the research and development of a future molar sense and calculation integrated device.

Inventors

  • Sui Fengrui
  • Liu Beituo
  • ZHAO YUYE
  • JIANG RONGPING
  • QI RUIJUAN
  • YUE FANGYU

Assignees

  • 华东师范大学

Dates

Publication Date
20260505
Application Date
20260209

Claims (6)

  1. 1. The In 2 Se 3 wurtzite ferroelectric semiconductor material consists of two elements of In and Se, wherein the stoichiometric ratio of In to Se=2:3, in to Se is tetrahedral coordination, the material has a defect wurtzite structure, the cation position of the material is occupied by In and unordered vacancies, the anion position of the material is occupied by Se, the material space group is P6 3 mc, the lattice constant a=4.01 a, b=4.01 a and c=6.82 a, the material is obtained by adopting a two-dimensional van der Waals layered In 2 Se 3 semiconductor as a precursor, adopting an electron beam irradiation, laser irradiation or heating mode to regulate and control the phase change from the two-dimensional layered In 2 Se 3 to non-layered 6H type In 2 Se 3 or 3R type In 2 Se 3 , and further carrying out electric field regulation and control.
  2. 2. A method of preparing an In 2 Se 3 wurtzite ferroelectric semiconductor material according to claim 1, comprising the steps of: Step 1, stripping a two-dimensional single crystal In 2 Se 3 block by adopting a mechanical tape stripping method to obtain In 2 Se 3 thin sheet samples with different thicknesses; Step 2, irradiating the In 2 Se 3 sheet sample obtained In the step 1 by adopting any one of electron beam irradiation, rapid heating annealing and high-power laser, preparing a transmission sample by using a focused ion beam, and then carrying out atomic structure characterization to confirm that a non-lamellar In 2 Se 3 material with a 6H or 3R structure is obtained; Step 3, carrying out direct current power-up treatment on the non-lamellar In 2 Se 3 material with the 6H or 3R structure after the treatment In the step 2; and 4, representing the novel wurtzite In 2 Se 3 crystal structure and ferroelectric property obtained by the treatment In the step 3.
  3. 3. The method for preparing the In 2 Se 3 wurtzite ferroelectric semiconductor material according to claim 1, wherein In the mechanical tape stripping method In step 1, a bulk In 2 Se 3 material is placed on a 3M transparent tape or a PET blue film tape, the tape is folded and stuck for multiple times, then the In 2 Se 3 bulk is thinned gradually into thin slices with different thicknesses, and a slice sample with a flat surface is taken out and placed on a silicon slice.
  4. 4. The method for preparing the In 2 Se 3 wurtzite ferroelectric semiconductor material according to claim 1, wherein the high-power laser irradiation In step 2 is performed by using a micro raman spectrometer, and the specific steps are as follows: Focusing and finding a sample area with uniform and smooth color under the multiplying power of a light mirror 50; 22, selecting 473, nm laser wavelength, 10% ND filter, and final power of 5.0, mW; 23, irradiating the selected positions with uniform and flat color for a plurality of times, wherein the total irradiation time length is 20 s; transmission sample preparation using focused ion beam and atomic structure characterization using a spherical aberration correcting transmission electron microscope.
  5. 5. The method for preparing an In 2 Se 3 wurtzite ferroelectric semiconductor material according to claim 1, wherein the step 3 comprises: 31, using NaOH solution with the concentration of 5-10 mol/L, using tungsten wire as an anode, using iron wire as a cathode, and carrying out electrochemical corrosion on the tip of the tungsten wire; 32, the vacuum degree is 1 multiplied by 10 -5 Pa, the bottom of the sample is grounded, the probe contacts the irradiation position at the top of the sample, and direct current is applied for 0.1-2V; The current reading was observed to change by an order of magnitude from 10 -9 a to 10 -6 a to stop power-up.
  6. 6. The method for preparing an In 2 Se 3 wurtzite ferroelectric semiconductor material according to claim 1, wherein the characterization In step 4 is atomic structure characterization of the sample after the power-up In step 3.

Description

In 2Se3 wurtzite ferroelectric semiconductor material and preparation method thereof Technical Field The invention belongs to the field of integrated circuits, in particular to an In 2Se3 wurtzite ferroelectric semiconductor material and a preparation method thereof, and relates to a silicon-based compatible electronic information functional material preparation and device technology. Background Ferroelectric materials play a critical role in the fields of nonvolatile memories, sensors, energy conversion devices, microelectromechanical systems (MEMS) and the like due to their spontaneous polarization characteristics that can be reversed by an external electric field. Since the existence of ferroelectricity in a wurtzite (Wurtzite, WZ) structure is found, the material has excellent characteristics of high spontaneous polarization strength and high breakdown field strength, quickly becomes a research hot spot of next-generation ferroelectric materials, and shows application potential exceeding that of traditional perovskite oxides. Among them, ferroelectric semiconductors having a wurtzite (Wurtzite) structure, such as aluminum scandium nitride (AlScN) and zinc magnesium oxide (ZnMgO), are hot spots of current research. Such materials generally have excellent piezoelectric response, a wide band gap, and good compatibility with existing semiconductor processes (e.g., CMOS), and exhibit great potential for application. However, the crystal structure of the existing wurtzite ferroelectric material, whether it is AlScN system or ZnMgO system, is essentially a stable three-dimensional (3D) covalent bonding system. Their preparation generally relies on thin film growth techniques such as magnetron sputtering, molecular beam epitaxy, etc., in a high temperature or high energy plasma environment, by atomic layer-by-layer deposition to form the desired three-dimensional network structure. Although the materials have excellent performance, the preparation process has high requirements on equipment and severe conditions, and most of the materials are wide-bandgap materials, so that the photoelectric application of the materials in the visible light range is limited. The wurtzite nitride ferroelectric material represented by AlScN has the advantages of strong spontaneous/piezoelectric polarization performance, strong ferroelectric performance, high Curie temperature, CMOS compatibility and the like, solves the application bottlenecks that the traditional oxide ferroelectric phase is unstable and is difficult to be compatible with a mainstream semiconductor process platform and the like, and has application prospects in the fields of 5G communication, power electronics, artificial intelligence and the like. However, since the polarization inversion involves the co-migration of metal-nitrogen atoms, domain dynamics of wurtzite nitride ferroelectrics are more complex than those of conventional oxide ferroelectrics, resulting in higher polarization inversion barriers, and the problems of high coercive field and wake-up behavior are faced, which restricts the large-scale application thereof. Although wurtzite ferroelectric materials have many of the above excellent characteristics, the current research subjects of wurtzite ferroelectric materials are still mainly limited to a few simple nitride or oxide binary/ternary compounds, such as AlScN. This limitation has limited to some extent our understanding of the ferroelectric physical mechanism intrinsic to wurtzite structure from a broader range of chemical compositions and structural variants. Therefore, the novel ferroelectric material with wurtzite structure is actively explored and discovered, and has double important significance. First, in the basic science level, the expanding material system is a basic stone for understanding the origin and regulation law of wurtzite type ferroelectricity. Secondly, in the technical application level, the development of novel candidate materials is a necessary way for realizing performance breakthrough and meeting diversified integration requirements. The current AlScN-based wurtzite ferroelectric films have demonstrated good compatibility with mainstream semiconductor process platforms, which makes them very attractive in micro-nano electronic devices such as memories, filters, energy harvesters, etc. But innovations must be made from a material source in order to further optimize performance, such as decreasing coercive field, improving durability, or achieving new functions, such as narrow bandgap semiconductor characteristics. The exploration of more wurtzite ferroelectric is expected to find materials with better comprehensive properties, such as higher residual polarization, lower leakage current, better thermal stability or unique functions, such as photoelectric coupling and piezoelectric-ferroelectric cooperation, so that the application layout of wurtzite ferroelectric technology is greatly widened, and key material support i