CN-121985577-A - Quantum device with energy band structure regulated by artificial periodic potential field and manufacturing method

Abstract

The invention discloses a quantum device with an energy band structure regulated by utilizing an artificial periodic potential field and a manufacturing method thereof, belonging to the fields of semiconductor technology and quantum physics. The quantum device comprises a substrate, an oxide layer, a first dielectric layer, a quantum material layer, a second dielectric layer and a top grid layer, wherein the oxide layer is arranged on the substrate, the surface of the oxide layer is provided with microstructures distributed in an array mode, the first dielectric layer is arranged on the oxide layer, the quantum material layer is arranged on the first dielectric layer, the second dielectric layer is arranged on the quantum material layer, and the top grid layer is arranged on the second dielectric layer. According to the quantum device and the manufacturing method for regulating and controlling the energy band structure by utilizing the artificial periodic potential field, provided by the invention, the electronic energy band structure of the quantum material layer can be regulated and controlled, and greater flexibility can be provided for any lattice constant, geometric shape and adjustable strength, so that the fine regulation and control of the energy band structure can be realized, and various experimental technical problems encountered when the energy band structure of the quantum material is regulated and controlled by an artificial method can be solved.

Inventors

• Kou Xiufeng
• CAI XINYU
• YAO QI

Assignees

• 上海科技大学

Dates

Publication Date

20260505

Application Date

20241023

Claims (11)

1. 1.A quantum device for modulating an energy band structure using an artificial periodic potential field, comprising at least: A substrate; The oxide layer is arranged on the substrate, and the surface of the oxide layer is provided with microstructures distributed in an array; a first dielectric layer disposed on the oxide layer; a quantum material layer disposed on the first dielectric layer; a second dielectric layer disposed on the quantum material layer, and And a top gate layer disposed on the second dielectric layer.
2. 2. The quantum device of claim 1, wherein the microstructure has a depth of from one fifteen to one tenth of the oxide layer thickness.
3. 3. The quantum device of claim 1, wherein the microstructures are holes distributed in an array, the holes have a diameter of 30nm to 50nm, and the hole gap is 15nm to 25nm.
4. 4. A quantum device of claim 3 wherein the holes are arranged in a square, close packed, cage or hexagonal configuration.
5. 5. The quantum device of claim 1, wherein the quantum material layer comprises a graphene layer, the top gate layer comprises thin-layer graphite, the length of the top gate layer is greater than the length of the quantum material layer, the width of the top gate layer is less than the width of the quantum material layer, and the graphene is in a single-layer, double-layer or three-layer structure.
6. 6. The quantum device of claim 1, wherein the quantum material layer comprises at least one of a two-dimensional van der waals material, a topology material, or a superconducting material.
7. 7. The quantum device of claim 1, wherein the first and second dielectric layers comprise hexagonal boron nitride and the first dielectric layer has a size greater than the size of the quantum material layer, the first and second dielectric layers being capable of completely encapsulating the quantum material layer.
8. 8. The quantum device of claim 7, wherein the first dielectric layer has a thickness of less than 5nm.
9. 9. The manufacturing method of the quantum device with the energy band structure regulated by utilizing the artificial periodic potential field is characterized by comprising the following steps of: providing a substrate, wherein an oxide layer is arranged on the substrate; nano-patterning the oxide layer to form microstructures distributed in an array on the surface of the oxide layer, and A stacked first dielectric layer, quantum material layer, second dielectric layer, and top gate layer are formed on the oxide layer.
10. 10. The method for manufacturing the quantum device with the artificial periodic potential field regulation energy band structure according to claim 9, wherein the manufacturing method comprises the steps of: Providing a bearing substrate and a transfer substrate, wherein the transfer substrate comprises a transfer head and a transfer film, and the transfer film is arranged on the transfer head; Disposing the top gate layer on the carrier substrate; the transfer head picks up the top gate layer at a first preset temperature; Disposing the second dielectric layer on the carrier substrate; the transfer head picks up the second dielectric layer at the first preset temperature; disposing the quantum material layer on the carrier substrate; the transfer head picks up the quantum material layer; Disposing the first dielectric layer on the carrier substrate; The transfer head picks up the first dielectric layer, and And moving the transfer head onto the substrate, and completing the transfer of the first dielectric layer, the quantum material layer, the second dielectric layer and the top gate layer at a second preset temperature.
11. 11. The method for manufacturing the quantum device with the artificial periodic potential field regulation energy band structure according to claim 10, wherein the first preset temperature is 80-100 ℃, and the second preset temperature is 135-155 ℃.

Description

Quantum device with energy band structure regulated by artificial periodic potential field and manufacturing method Technical Field The invention belongs to the field of semiconductor technology and quantum physics, and particularly relates to a quantum device with an energy band structure regulated by utilizing an artificial periodic potential field and a manufacturing method thereof. Background The quantum material has various degrees of freedom coupling effects such as charge, orbit, spin, crystal lattice and the like, shows various novel quantum behaviors such as high-temperature superconductivity, charge density wave, topological superconductivity and the like, and is one of the front directions of condensed state physics. Particularly, the energy band structure is regulated and controlled, so that the physical properties of materials are regulated in a large range, the functions of devices are optimized, a key foundation is provided for developing high-performance devices and advanced technologies, and the method can be used for promoting industrial application of the high-performance devices in all directions of electronics, spintronics, optics and the like in the future. At present, researchers mostly adopt methods such as chemical doping, stress regulation and control, artificial super-structure film growth, rotation angle and the like to regulate and control the energy bands of quantum materials. However, these methods have various problems such as a great reduction in material quality due to the presence of high concentration of impurities and defects, high requirements on vacuum equipment and growth techniques, high difficulty in angle control accuracy, complicated preparation process, and poor repeatability. Disclosure of Invention The invention aims to provide a quantum device and a manufacturing method for regulating and controlling an energy band structure by utilizing an artificial periodic potential field, the quantum device and the manufacturing method for regulating and controlling the energy band structure by utilizing the artificial periodic potential field can regulate and control the electronic energy band structure of a quantum material layer, the method can provide greater flexibility in terms of any lattice constant, geometric shape and modulatable intensity, can realize fine regulation and control of the energy band structure, and can solve various experimental technical problems encountered when the energy band structure of the quantum material is regulated and controlled by a manual method. In order to solve the above technical problems, the present invention provides a quantum device for controlling an energy band structure by using an artificial periodic potential field, which at least includes: A substrate; The oxide layer is arranged on the substrate, and the surface of the oxide layer is provided with microstructures distributed in an array; a first dielectric layer disposed on the oxide layer; a quantum material layer disposed on the first dielectric layer; a second dielectric layer disposed on the quantum material layer, and And a top gate layer disposed on the second dielectric layer. In an embodiment of the present invention, the depth of the microstructure is one fifteenth to one tenth of the thickness of the oxide layer. In an embodiment of the present invention, the microstructures are holes distributed in an array, the diameters of the holes are 30nm to 50nm, and the hole gaps are 15nm to 25nm. In an embodiment of the present invention, the holes are arranged in a square, close-packed, cage-mesh or hexagonal structure. In an embodiment of the present invention, the quantum material layer includes a graphene layer, the top gate layer includes thin graphite, the length of the top gate layer is greater than the length of the quantum material layer, the width of the top gate layer is smaller than the width of the quantum material layer, and the graphene has a single-layer, double-layer or three-layer structure. In an embodiment of the invention, the quantum material layer comprises at least one of a two-dimensional van der waals material, a topology material, or a superconducting material. In an embodiment of the present invention, the first dielectric layer and the second dielectric layer include hexagonal boron nitride, and a size of the first dielectric layer is larger than a size of the quantum material layer, and the first dielectric layer and the second dielectric layer can completely encapsulate the quantum material layer. In an embodiment of the present invention, a thickness of the first dielectric layer is less than 5nm. The invention also provides a manufacturing method of the quantum device with the energy band structure regulated by using the artificial periodic potential field, which comprises the following steps: providing a substrate, wherein an oxide layer is arranged on the substrate; nano-patterning the oxide layer to form microstructures distributed