CN-121985588-A - Novel high-maintenance-voltage SCR structure and manufacturing method thereof

CN121985588ACN 121985588 ACN121985588 ACN 121985588ACN-121985588-A

Abstract

The invention discloses a novel high-maintenance voltage SCR structure and a manufacturing method thereof, belonging to the technical field of semiconductor integrated circuits; the semiconductor device comprises a first conductive type well region, a groove, a first conductive type side wall zener injection region, a second conductive type side wall region and a second conductive type side wall region, wherein the first conductive type well region is arranged in a first conductive type substrate, the second conductive type well region is arranged at one side edge of the first conductive type well region, the groove spans the junction of the first conductive type well region and the second conductive type well region, the first conductive type side wall zener injection region is arranged at one side of the groove, which is connected with the first conductive type well region, and extends to the bottom of the groove, and the second conductive type side wall region is arranged at one side of the groove, which is connected with the second conductive type well region, and extends to the bottom of the groove, which is connected with the first conductive type side wall zener injection region. By introducing a new current trigger path, carriers are transported along the groove wall, the carrier transport path is converted into the inside of the device from the device, and the trigger voltage of the SCR device is reduced.

Inventors

ZHOU JIAN
WANG SHUAIQI
ZHANG DAIZHONG

Assignees

杰平方半导体(上海)有限公司

Dates

Publication Date: 20260505
Application Date: 20241030

Claims (10)

1. A novel high maintenance voltage SCR structure comprising: A first conductivity type substrate; the first conductive type well region is arranged in the first conductive type substrate, and one side edge of the first conductive type well region is provided with a second conductive type well region; a trench crossing the junction of the first conductivity type well region and the second conductivity type well region; The first conduction type side wall zener injection region is arranged at one side of the groove connected with the first conduction type well region and extends to the bottom of the groove; and the second conductive type side wall region is arranged on one side of the groove connected with the second conductive type well region and extends to the bottom of the groove to be connected with the first conductive type side wall Zener injection region.
2. The novel high sustain voltage SCR structure of claim 1, wherein a bottom of said trench is below a lower edge of said first conductivity type well region and second conductivity type well region.
3. The novel high sustain voltage SCR structure as recited in claim 1, wherein the lower edges of said first conductivity type well region and second conductivity type well region are on a same horizontal line.
4. The novel high sustain voltage SCR structure of claim 1, wherein a bottom lower edge of said first conductivity type sidewall zener implant region is lower than a bottom lower edge of said second conductivity type sidewall region.
5. The novel high sustain voltage SCR structure of claim 1, wherein a first ion implantation region is disposed in the second conductivity type well region, one side of the first ion implantation region is connected with a second ion implantation region, and the conductivity types of the first ion implantation region and the second ion implantation region are different.
6. The novel high sustain voltage SCR structure of claim 5, wherein said first ion implantation zone and said second ion implantation zone are interconnected by a wire for functioning as an anode of said SCR structure.
7. The novel high sustain voltage SCR structure as recited in claim 1, wherein a third ion implantation region is disposed in the first conductivity type well region, a fourth ion implantation region is connected to one side of the third ion implantation region, and conductivity types of the third ion implantation region and the fourth ion implantation region are different.
8. The novel high sustain voltage SCR structure of claim 7, wherein said third ion implantation zone and fourth ion implantation zone are interconnected by a wire for functioning as a cathode of said SCR structure.
9. The manufacturing method of the novel high-maintenance voltage SCR structure is characterized by comprising the following steps of: providing a first conductive type substrate; forming adjacent first conductivity type well regions and second conductivity type well regions in the first conductivity type substrate by ion implantation; etching junction areas of the first conductive type well region and the second conductive type well region to form a groove; Implanting second conductivity type ions into the side wall and the bottom of the groove, which are close to the second conductivity type well region, so as to form a second conductivity type side wall region; And implanting first-conductivity-type ions into the side wall and the bottom of the groove close to the first-conductivity-type well region, and performing thermal activation to form a first-conductivity-type side wall zener implantation region.
10. The method of manufacturing the novel high sustain voltage SCR structure of claim 9, wherein after forming the first conductivity type well region and the second conductivity type well region, ion implantation is performed to the first conductivity type well region and the second conductivity type well region, adjacent first ion implantation region and second ion implantation region are formed in the first conductivity type well region, conductivity types of the first ion implantation region and the second ion implantation region are different, and adjacent third ion implantation region and fourth ion implantation region are formed in the second conductivity type well region, and conductivity types of the third ion implantation region and the fourth ion implantation region are different.

Description

Novel high-maintenance-voltage SCR structure and manufacturing method thereof Technical Field The invention relates to the technical field of semiconductor integrated circuits, in particular to a novel high-maintenance voltage SCR structure and a manufacturing method thereof. Background ESD, i.e., electrostatic discharge, is an old natural phenomenon. ESD exists at every corner of people's daily life. But such common electrical phenomena are fatal threats to sophisticated integrated circuits. An electrical surge/transient voltage, which refers to a random and over-normal high voltage or high current that suddenly occurs in the circuit, is characterized by a short time of occurrence and a very high instantaneous energy. The electric surge has strong destructiveness to the electronic element and the integrated circuit, the light logic circuit is induced to generate misoperation, and the heavy logic circuit is induced to generate serious thermal effects such as secondary breakdown of the triode, latch-up effect of the complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) and the like, so that the device or the integrated circuit is disabled. Electrical surges typically have two sources of randomness, the first being an unstable factor of the power grid, such as abrupt switching, abrupt start-up of capacitive or inductive loads, hot plugging of associated equipment, unstable operation of associated electrical power sources, etc. The second is external sudden interference such as lightning, electrostatic discharge, etc. As integrated circuit fabrication processes have increased, their minimum linewidths have decreased to sub-micron and even nanometer levels, and as chip performance has increased, their resistance to ESD attack has also decreased substantially, thus causing more serious electrostatic damage. Most of the ESD generation can cause non-fatal damage to the integrated circuit, thereby reducing the life span and reliability of the integrated circuit, and further causing degradation of system functions, which is a great impediment to achieving large-scale high-reliability integration. However, some ESD devices have low trigger voltage, which is difficult to meet the requirements of the existing electronic devices, and in order to realize an ESD device with excellent trigger voltage and sustain voltage characteristics, the invention provides a novel high-sustain voltage SCR structure based on the conventional SCR device structure shown in fig. 1. It should be noted that the information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art. Disclosure of Invention The invention aims to provide a novel high-maintenance-voltage SCR structure and a manufacturing method thereof, so as to solve the problem of low trigger voltage of an ESD device. In order to solve the above technical problems, the present invention provides a novel high-maintenance voltage SCR structure, including: A first conductivity type substrate; the first conductive type well region is arranged in the first conductive type substrate, and one side edge of the first conductive type well region is provided with a second conductive type well region; a trench crossing the junction of the first conductivity type well region and the second conductivity type well region; The first conduction type side wall zener injection region is arranged at one side of the groove connected with the first conduction type well region and extends to the bottom of the groove; and the second conductive type side wall region is arranged on one side of the groove connected with the second conductive type well region and extends to the bottom of the groove to be connected with the first conductive type side wall Zener injection region. Preferably, the bottom of the trench is lower than the lower edges of the first conductivity type well region and the second conductivity type well region. Preferably, the lower edges of the first conductivity type well region and the second conductivity type well region are on the same horizontal line. Preferably, a bottom lower edge of the first conductivity type sidewall zener implant region is lower than a bottom lower edge of the second conductivity type sidewall region. Preferably, a first ion implantation region is arranged in the second conductive type well region, one side of the first ion implantation region is connected with a second ion implantation region, and the conductive types of the first ion implantation region and the second ion implantation region are different. Preferably, the first ion implantation region and the second ion implantation region are interconnected by a wire for functioning as an anode of the SCR structure. Preferably, a third ion implantation r