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CN-121985592-A - Has CuSbSe2Intercalated antimony selenide thin-film solar cell and preparation method thereof

CN121985592ACN 121985592 ACN121985592 ACN 121985592ACN-121985592-A

Abstract

The invention discloses an antimony selenide thin-film solar cell with CuSbSe 2 intercalation and a preparation method thereof, and belongs to the technical field of thin-film solar cell preparation. An ultra-thin Cu layer is introduced between Mo and Sb 2 Se 3 to form CuSbSe 2 intercalation with higher doping concentration, so that contact potential barrier and back contact resistance are reduced to form ohmic contact, hole extraction efficiency is improved, and current density and filling factor of the Sb 2 Se 3 thin-film solar cell are improved.

Inventors

  • WEN XIXING
  • WANG YINGJIE
  • WANG YUFAN

Assignees

  • 南京邮电大学

Dates

Publication Date
20260505
Application Date
20260208

Claims (10)

  1. 1. The antimony selenide thin-film solar cell with CuSbSe 2 intercalation is characterized by comprising a glass substrate, a Mo metal electrode layer, a CuSbSe 2 layer, an Sb 2 Se 3 layer, a CdS buffer layer, an ITO window layer and a top electrode which are stacked with each other in sequence from bottom to top.
  2. 2. The antimony selenide thin-film solar cell with CuSbSe 2 intercalation according to claim 1, wherein the Mo metal electrode layer has a thickness of 500nm-1000nm, the cusbse 2 layer has a thickness of 1nm-3nm, the Sb 2 Se 3 layer has a thickness of 1.2um-1.5um, the cds buffer layer has a thickness of 60nm-90nm, and the ito window layer has a thickness of 200nm-250nm.
  3. 3. An antimony selenide thin-film solar cell according to claim 1 having CuSbSe 2 intercalation, the top electrode is characterized in that the top electrode is made of Al.
  4. 4. A method of making an antimony selenide thin-film solar cell having CuSbSe 2 intercalation according to any one of claims 1 to 3, comprising the steps of: (1) Depositing a Mo metal electrode layer on the surface of the glass substrate by adopting a direct-current magnetron sputtering mode; (2) Depositing Cu intercalation on the Mo metal electrode layer by adopting a vacuum evaporation mode, and then depositing an Sb precursor layer on the surface of the Cu intercalation by radio frequency magnetron sputtering to obtain an Sb film containing the Cu intercalation; (3) Placing the Sb film containing Cu intercalation into an graphite box, placing Se particles at the four corners of the graphite box respectively, and then carrying out heat treatment on the graphite box in an inert gas atmosphere to obtain a CuSbSe 2 intercalation Sb 2 Se 3 film; (4) And depositing a CdS buffer layer, sputtering an ITO window layer and evaporating a top electrode on the Sb 2 Se 3 film containing CuSbSe 2 intercalation in sequence to construct the thin film solar cell device.
  5. 5. The method for preparing an antimony selenide thin-film solar cell having CuSbSe 2 intercalation according to claim 4, wherein the radian of Cu intercalation in the Sb thin film is 1-3nm.
  6. 6. The method for preparing a thin film solar cell with CuSbSe 2 intercalation of antimony selenide according to claim 4, wherein the weight of Se particles at four corners of the cartridge is 6mg-10mg.
  7. 7. The method of claim 4, wherein the step of heat treating the graphite box comprises treating the graphite box at 340 ℃ for 300 seconds and then at 410 ℃ for 600 seconds.
  8. 8. The method for preparing a thin film solar cell with CuSbSe 2 intercalation of antimony selenide according to claim 4, the method is characterized in that the inert gas is argon.
  9. 9. Use of the thin film solar cell prepared by the method of any one of claims 4-8 for integrated power supply in a building.
  10. 10. The back contact passivation method for the antimony selenide thin film solar cell is characterized by comprising the step of introducing CuSbSe 2 intercalation between Mo and Sb 2 Se 3 .

Description

Antimony selenide thin-film solar cell with CuSbSe 2 intercalation and preparation method thereof Technical Field The invention belongs to the technical field of thin-film solar cell preparation, and particularly relates to an antimony selenide thin-film solar cell with CuSbSe 2 intercalation and a preparation method thereof. Background In recent years, thin film solar cells have become a research hotspot in the photovoltaic field due to advantages such as low cost, light weight, and flexible preparation. Of these, sb 2Se3 is regarded as an emerging photovoltaic material, which is a very potential next-generation thin-film solar cell material due to its suitable forbidden bandwidth (about 1.1-1.3 eV), high absorption coefficient (> 10 5 cm-1), good environmental friendliness, and simple crystal structure. However, the photoelectric conversion efficiency of the current substrate structure Sb 2Se3 thin-film solar cell taking Mo as a back electrode is still lower than the theoretical limit value, and the main reason is that the back contact interface has the key problems of (1) work function mismatch, namely, because of the work function mismatch problem of Mo metal and Sb 2Se3, a Schottky barrier is easily generated at the top of the valence band of Sb 2Se3, the extraction and collection of carriers are blocked, and the loss of open-circuit voltage and the reduction of the filling factor are caused. (2) The unavoidable MoSe 2 interface layer is that a layer of uncontrollable MoSe 2 is easily generated at the interface in the subsequent process of depositing Sb 2Se3 by using a traditional back electrode material Mo, the Schottky barrier can be reduced to a certain extent by heavily doped MoSe 2 intercalation, the extraction and collection rate of carriers is improved, the lifting effect is always limited, and the improvement on the photoelectric efficiency of the thin film solar cell is far insufficient. Therefore, a simple, efficient and low-cost back contact passivation method is developed, and the back contact interface of the Sb 2Se3 thin-film solar cell is optimized, so that the method has important practical significance for improving the photoelectric conversion efficiency and long-term stability of the cell. Disclosure of Invention Aiming at the defects of the prior art, the invention aims to provide an antimony selenide thin-film solar cell with CuSbSe 2 intercalation and a preparation method thereof, which solve the problems in the prior art. The aim of the invention can be achieved by the following technical scheme: An antimony selenide thin-film solar cell with CuSbSe 2 intercalation comprises a glass substrate, a Mo metal electrode layer, a CuSbSe 2 layer, a Sb 2Se3 layer, a CdS buffer layer, an ITO window layer and a top electrode which are stacked with each other from bottom to top. Further, the thickness of the Mo metal electrode layer is 500-1000 nm, the thickness of the CuSbSe 2 layer is 1-3 nm, the thickness of the Sb 2Se3 layer is 1.2-1.5 um, the thickness of the CdS buffer layer is 60-90 nm, and the thickness of the ITO window layer is 200-250 nm. Further, the top electrode is made of Al. The preparation method of the antimony selenide thin-film solar cell with CuSbSe 2 intercalation comprises the following steps: (1) Depositing a Mo metal electrode layer on the surface of the glass substrate by adopting a direct-current magnetron sputtering mode; (2) Depositing Cu intercalation on the Mo metal electrode layer by adopting a vacuum evaporation mode, and then depositing an Sb precursor layer on the surface of the Cu intercalation by radio frequency magnetron sputtering to obtain an Sb film containing the Cu intercalation; (3) Placing the Sb film containing Cu intercalation into an graphite box, placing Se particles at the four corners of the graphite box respectively, and then carrying out heat treatment on the graphite box in an inert gas atmosphere to obtain a CuSbSe 2 intercalation Sb 2Se3 film; (4) And depositing a CdS buffer layer, sputtering an ITO window layer and evaporating a top electrode on the Sb 2Se3 film containing CuSbSe 2 intercalation in sequence to construct the thin film solar cell device. Further, the radian of Cu intercalation in the Sb film is 1-3nm. Further, the weight of Se particles at four corners of the graphite box is 6mg-10mg. Further, the process of heat treating the graphite box includes treating at 340 ℃ for 300 seconds and then at 410 ℃ for 600 seconds. Further, the inert gas is argon. The thin film solar cell prepared by the method is applied to integrated power supply of a building. A back contact passivation method for an antimony selenide thin film solar cell includes introducing CuSbSe 2 intercalation between Mo and Sb 2Se3. The invention has the beneficial effects that: 1. the invention adopts a Sb 2Se3 thin film solar cell back contact passivation method of introducing an ultrathin Cu layer between Mo and Sb 2Se3, and no report of the technology exists