CN-121985604-A - Te-based photoelectric detector based on Te super-surface homogeneous integration and preparation method thereof

Abstract

The invention belongs to the technical field of micro-nano optics and photoelectric detection, and particularly discloses a Te-based photoelectric detector based on Te super-surface homogeneous integration and a preparation method thereof. According to the invention, the Te super-surface is used for increasing the absorptivity of the Te thin film light sensing layer to the C wave band, so that the built Te-based photoelectric detector based on Te super-surface homogeneous integration can remarkably improve the photoelectric detection performance, and the problems of low absorptivity and reduced photoelectric performance caused by the reduction of thickness of the traditional Te thin film photoelectric detector for reducing dark current are solved.

Inventors

• CHEN JIEWEI
• LI JUNYI
• ZHENG TAO
• LIN XIANG
• SUI YU
• WANG WENXIAO
• YANG ZHONGMIN

Assignees

• 华南师范大学

Dates

Publication Date

20260505

Application Date

20260127

Claims (10)

1. 1. A Te-based photoelectric detector based on Te super-surface homogeneous integration comprises a substrate and is characterized in that a Te film photoelectric sensing layer is arranged on the upper end face of the substrate, a metal source electrode is arranged on one side of the upper end face of the Te film photoelectric sensing layer, a metal drain electrode is arranged on the other side of the upper end face of the Te film photoelectric sensing layer, and a Te super-surface layer serving as a local light treatment layer is arranged on the upper end face of the Te film photoelectric sensing layer between the metal source electrode and the metal drain electrode.
2. 2. The Te-based photodetector based on Te subsurface homointegration as claimed in claim 1, wherein said Te subsurface layer is composed of a plurality of micro-nano structures, and the cross section of said micro-nano structures is one of circular, rectangular, square and elliptical.
3. 3. The Te-based photodetector based on Te subsurface homointegration as claimed in claim 1, wherein said substrate is made of one of Si/SiO 2 , quartz, sapphire, PI, PET.
4. 4. The Te-based photodetector based on Te subsurface homointegration as claimed in claim 1, wherein said Te thin film photoelectric sensing layer has a thickness of 5-80nm.
5. 5. The Te-based photoelectric detector based on Te subsurface homogeneous integration as claimed in claim 1, wherein the materials of the metal drain electrode and the metal source electrode are one or a combination of more than one of Cr, ti, ag and Au, and the thicknesses of the metal drain electrode and the metal source electrode are 30-50nm.
6. 6. The Te-based photodetector based on Te subsurface homointegration as claimed in claim 2, wherein said micro-nano structure has a circular cross section with a diameter of 160-300nm and a height of 150-300 nm.
7. 7. The Te-based photodetector based on Te subsurface homointegration as claimed in claim 2, wherein said micro-nano structure has a rectangular cross section, a long side length of 200nm-300nm, a short side length of 100nm-150nm, and a height of 150nm-300nm.
8. 8. The Te-based photodetector based on Te subsurface homointegration as claimed in claim 2, wherein said micro-nano structure has a square cross section, a side length of 100nm-300nm, and a height of 150nm-300nm.
9. 9. The Te-based photodetector based on Te subsurface homointegration as claimed in claim 2, wherein said micro-nano structure has an elliptical cross section, a long axis of 200nm-300nm, a short axis of 100nm-150nm, and a height of 150nm-300nm.
10. 10. A method for manufacturing a Te-based photodetector based on Te supersurface homointegration as claimed in any one of claims 1 to 9, comprising the steps of: s1, depositing a Te film on the upper end face of a clean substrate to form a Te film photoelectric sensing layer; s2, depositing a metal source electrode and a metal drain electrode on two sides of the upper end face of the Te film photosensitive layer; And S3, depositing a Te super-surface layer on the upper end surface of the Te thin film photoelectric sensing layer between the metal source electrode and the metal drain electrode to obtain the Te-based photoelectric detector based on Te super-surface homogeneous integration.

Description

Te-based photoelectric detector based on Te super-surface homogeneous integration and preparation method thereof Technical Field The invention relates to the technical field of micro-nano optics and photoelectric detection, in particular to a Te-based photoelectric detector based on Te super-surface homogeneous integration and a preparation method thereof. Background The photoelectric detector is used as a core device for converting optical signals into electric signals, and has important application in the fields of optical communication, optical imaging, optical sensing and the like. Tellurium (Te) is a narrow bandgap semiconductor (band gap width of about 0.35 eV), has a broad spectral response characteristic, and can cover a broad spectral range from visible to infrared. In addition, te shows extremely high hole mobility (about 700 cm 2/V.s at room temperature), is favorable for rapid transport and collection of photon-generated carriers, and provides a material foundation for constructing a high-speed response photoelectric detector. However, its narrow band gap also results in Te thin films with higher intrinsic conductivity, making Te materials generally challenging to high dark current in practical applications. Although dark current can be restrained to a certain extent by reducing the Te thickness, the light absorption efficiency of the material can be remarkably reduced, so that the optimization of the overall performance of the photoelectric detection device is restricted. Currently, the disclosed research mainly aims at improving the problem of difficulty in balancing high dark current and low light absorbance of a Te-based detector by constructing a homodimensional or mixed-dimensional heterojunction structure, such as a tellurium/germanium heterojunction photoelectric detector and a preparation method thereof which are deposited by low-temperature evaporation and disclosed in China patent application No. 202510998900.8, and a heterojunction type self-powered infrared photoelectric detector and a preparation method thereof which are based on tellurium-based oxide and disclosed in China patent application No. 202411375463.6. However, the method has the challenges of high process complexity, remarkable heterojunction interface lattice mismatch and the like, which aggravates the scattering and recombination of the photon-generated carriers and limits the further improvement of the device performance. Meanwhile, the responsivity of the heterojunction device is obviously reduced while dark current is reduced, so that complex amplifying circuits are required for matching in subsequent integration, and development of miniaturized devices is hindered. Therefore, how to reduce low dark current while maintaining high absorbance in Te-based photodetectors remains a critical technical issue in this field where breakthrough is needed. Disclosure of Invention In order to solve the technical problems, the invention provides the Te-based photoelectric detector based on Te super-surface homogeneous integration and the preparation method thereof, interface defects caused by lattice mismatch are avoided through a homogeneous structural design, meanwhile, the Mie resonance generated by strong coupling between the Te super-surface and the Te thin film is utilized to promote infrared light absorption, dark current is restrained, excellent light absorption and carrier transport characteristics can be maintained, and a new technical path is provided for the Te-based photoelectric detector with high performance and easy integration. In order to achieve the above purpose, the invention is implemented according to the following technical scheme: The invention provides a Te-based photoelectric detector based on Te super-surface homogeneous integration, which comprises a substrate, wherein a Te film photoelectric sensing layer is arranged on the upper end face of the substrate, a metal source electrode is arranged on one side of the upper end face of the Te film photoelectric sensing layer, a metal drain electrode is arranged on the other side of the upper end face of the Te film photoelectric sensing layer, and a Te super-surface layer serving as a local light treatment layer is arranged on the upper end face of the Te film photoelectric sensing layer between the metal source electrode and the metal drain electrode. When light is incident from the top of the super-surface layer, the light propagates along the Z-axis direction, and the light coupled after passing through the Te super-surface is localized on the Te film, so that the absorption rate of the Te super-surface is increased. Further, the Te super-surface layer is composed of a plurality of micro-nano structures, and the cross section of each micro-nano structure is one of round, rectangular, square and oval. Further, the substrate is made of one of Si/SiO 2, quartz, sapphire, PI and PET. Further, the thickness of the Te film photoelectric sensing layer is 5-80nm