CN-121985606-A - GaN-based heterojunction-based difunctional integrated phototransistor and preparation method thereof

Abstract

The invention relates to the technical field of photoelectric detectors, in particular to a difunctional integrated photoelectric transistor based on a GaN-based heterojunction and a preparation method thereof, the difunctional integrated photoelectric transistor based on the GaN-based heterojunction comprises a substrate layer, a buffer layer, a GaN barrier layer, an AlN reflecting layer, an AlGaN barrier layer, a GaN cap layer, a metal oxide film layer, a two-dimensional material layer and a metal electrode are sequentially grown on the substrate layer by an epitaxial growth method, the GaN barrier layer, the AlN reflecting layer, the AlGaN barrier layer and the GaN cap layer form a GaN/AlGaN heterojunction together, and the dual-function integrated photoelectric transistor is controlled to switch the function modes through the bias voltage based on the synergistic effect of the two-dimensional material layer and the GaN/AlGaN heterojunction. The invention has the physical foundation that two high-performance working modes coexist in a single physical entity by utilizing a cross-dimension heterogeneous integrated structure, and can control the photoelectric detection mode and the photoelectric synaptic mode switching of the difunctional integrated photoelectric transistor through low-bias electrical signals.

Inventors

• GAO FANGLIANG
• Ling Runyao
• YAO GUANGXING
• ZHAO YINGHAO
• LI SHUTI
• ZHANG LU

Assignees

• 华南师范大学

Dates

Publication Date

20260505

Application Date

20251231

Claims (10)

1. 1. The double-function integrated photoelectric transistor based on the GaN-based heterojunction is characterized by comprising a substrate layer (1), wherein a buffer layer (2), a GaN barrier layer (3), an AlN reflecting layer (4), an AlGaN barrier layer (5), a GaN cap layer (6), a metal oxide film layer (7), a two-dimensional material layer (8) and a metal electrode (9) are sequentially grown on the substrate layer (1) by using an epitaxial growth method, the GaN barrier layer (3) and the AlN reflecting layer (4), the AlGaN barrier layer (5) and the GaN cap layer (6) form a GaN/AlGaN heterojunction together, and the double-function integrated photoelectric transistor is controlled to switch a function mode by bias voltage based on the synergistic effect of the two-dimensional material layer (8) and the GaN/AlGaN heterojunction.
2. 2. The method for manufacturing a GaN-based heterojunction-based dual-function integrated phototransistor as claimed in claim 1, comprising the steps of: Selecting one of sapphire, siC and Si as a substrate, carrying out structuring treatment on the substrate, and preparing a pattern on the surface of the substrate to obtain a patterned substrate layer; Depositing a buffer layer on the substrate layer by using a chemical vapor deposition method; depositing a GaN barrier layer on the AlN buffer layer by using a chemical vapor deposition method; Depositing an AlN reflecting layer on the GaN barrier layer by using a chemical vapor deposition method; depositing an AlGaN barrier layer on the AlN reflecting layer by using a chemical vapor deposition method; Depositing a GaN cap layer on the AlGaN barrier layer by using a chemical vapor deposition method; Depositing a metal oxide thin film layer on the GaN cap layer by ALD; Growing a two-dimensional material layer on the metal oxide film layer by using experimental transfer or chemical vapor deposition and physical vapor deposition; and preparing a metal electrode on the two-dimensional material layer by using electron beam evaporation.
3. 3. The method of manufacturing a GaN-based heterojunction-based dual-function integrated phototransistor as claimed in claim 2, wherein the pattern is a periodic nanopillar array, a micro-scale groove, or an inverted pyramid structure for improving light absorption, reducing dislocation density, and enhancing heat dissipation.
4. 4. The method for manufacturing the double-function integrated phototransistor based on the GaN-based heterojunction as claimed in claim 2, wherein the buffer layer is made of AlN, gaN or AlGaN, and the thickness of the buffer layer is 10 nm-1000 nm.
5. 5. The method for manufacturing the double-function integrated phototransistor based on the GaN-based heterojunction as claimed in claim 2, wherein the GaN barrier layer is p-GaN, n-GaN or i-GaN, and the thickness of the GaN barrier layer is 1 nm-200 nm.
6. 6. The method for manufacturing the GaN-based heterojunction-based dual-function integrated phototransistor according to claim 2, wherein the AlGaN barrier layer is p-AlGaN, n-AlGaN or i-AlGaN, the Al component is 0.1-0.8, and the thickness of the AlGaN barrier layer is 1 nm-500 nm.
7. 7. The method for manufacturing the double-function integrated phototransistor based on the GaN-based heterojunction as claimed in claim 2, wherein the GaN cap layer is p-GaN, n-GaN or i-GaN, and the thickness of the GaN cap layer is 0.1 nm-10 nm.
8. 8. The method for manufacturing the GaN-based heterojunction-based dual-function integrated phototransistor as claimed in claim 2, wherein the metal oxide thin film layer is colorless and transparent and comprises Al 2 O 3 or ZnO, and the thickness of the metal oxide thin film layer is 1 nm to 100 nm.
9. 9. The method for manufacturing the double-function integrated phototransistor based on the GaN-based heterojunction as claimed in claim 2, wherein the two-dimensional material layer is Graphene, moSe 2 or MoS 2 , and the thickness of the two-dimensional material layer is 2 nm-400 nm.
10. 10. The method for manufacturing the double-function integrated phototransistor based on the GaN-based heterojunction as claimed in claim 2, wherein the metal electrode is Au, cr/Au, ti/Au or Ti/Al/Ni/Au, and the thickness of the metal electrode is 5 nm-20 um.

Description

GaN-based heterojunction-based difunctional integrated phototransistor and preparation method thereof Technical Field The invention relates to the technical field of semiconductor photodetectors, in particular to a difunctional integrated photoelectric transistor based on a GaN-based heterojunction and a preparation method thereof. Background With the rapid development of artificial intelligence, internet of things and edge computing, information processing systems are facing urgent demands for high-performance, low-power consumption, and multifunctional integrated devices. The traditional silicon-based chip based on von Neumann architecture has the problems of memory wall bottleneck and high power consumption caused by frequent data transportation between storage and processing units when processing sensing signals and computing tasks. The neuromorphic calculation inspired by the biological nervous system provides a revolutionary path for breaking through the bottleneck by simulating the memory calculation integration and parallel processing mechanism of the human brain. The hardware unit capable of simultaneously realizing the functions of environment sensing (such as optical signal detection) and brain-like computing (such as synaptic weight updating) is a core foundation for constructing the high-efficiency sensing-computing integrated system. At present, the realization of the sensing and calculating functions mainly depends on a discrete device scheme, namely, a high-performance photoelectric detector is adopted to convert optical signals into electric signals, and the electric signals are then transmitted to a rear-end artificial synapse or neuron circuit for processing. However, the discrete device scheme still has some defects, such as high system complexity, extra delay and energy loss generated by transmission and conversion of large-power consumption signals among the discrete devices, limited integration density, large occupied area of the discrete devices and difficulty in realizing large-scale and high-density array integration. The functions of the device are fixed after preparation, and cannot be dynamically reconstructed according to task requirements, so that the flexibility and self-adaptive capacity of the system are limited, and the application and development of the device are limited to a certain extent. Thus, there is a need for a phototransistor having both sensing and computing functions in a single physical entity. Disclosure of Invention In order to solve the technical problems in the prior art, the invention provides the double-function integrated photoelectric transistor based on the GaN-based heterojunction and the preparation method thereof, wherein the double-function integrated photoelectric transistor has the physical foundation that two high-performance working modes coexist in a single physical entity, and the photoelectric detection mode and the photoelectric synaptic mode switching of the double-function integrated photoelectric transistor can be controlled through low-bias electrical signals. A first object of the present invention is to provide a dual function integrated phototransistor based on GaN-based heterojunction. A second object of the present invention is to provide a method for manufacturing a dual function integrated phototransistor based on a GaN-based heterojunction. The first object of the present invention can be achieved by adopting the following technical scheme: The double-function integrated photoelectric transistor based on the GaN-based heterojunction comprises a substrate layer, wherein a buffer layer, a GaN barrier layer, an AlN reflecting layer, an AlGaN barrier layer, a GaN cap layer, a metal oxide film layer, a two-dimensional material layer and a metal electrode are sequentially grown on the substrate layer by utilizing an epitaxial growth method, the GaN barrier layer, the AlN reflecting layer, the AlGaN barrier layer and the GaN cap layer jointly form a GaN/AlGaN heterojunction, and the double-function integrated photoelectric transistor is controlled to switch a function mode by bias voltage based on the synergistic effect of the two-dimensional material layer and the GaN/AlGaN heterojunction. The preparation method of the difunctional integrated phototransistor based on the GaN-based heterojunction comprises the following steps: Selecting one of sapphire, siC and Si as a substrate, carrying out structuring treatment on the substrate, and preparing a pattern on the surface of the substrate to obtain a patterned substrate layer; Depositing a buffer layer on the substrate layer by using a chemical vapor deposition method; depositing a GaN barrier layer on the AlN buffer layer by using a chemical vapor deposition method; Depositing an AlN reflecting layer on the GaN barrier layer by using a chemical vapor deposition method; depositing an AlGaN barrier layer on the AlN reflecting layer by using a chemical vapor deposition method; Depositing