Search

CN-121985609-A - Photoelectric sensing element, photoelectric sensing array and preparation method

CN121985609ACN 121985609 ACN121985609 ACN 121985609ACN-121985609-A

Abstract

The invention relates to a photoelectric sensing element, a photoelectric sensing array and a preparation method, wherein the photoelectric sensing element comprises a substrate, a transistor module and a photoelectric detection module, the transistor module comprises a grid electrode, a first dielectric layer, an active layer, a first source electrode, a first drain electrode and a first passivation layer; the photoelectric detection module is sequentially provided with a second dielectric layer, a second source electrode, a second drain electrode and a second passivation layer from bottom to top, the first source electrode, the first drain electrode, the second source electrode and an external reading circuit are connected in series to form a loop, and a photosensitive sensing layer of the photoelectric detection module is filled into a channel between the second source electrode and the second drain electrode. The transistor module and the photoelectric detection module are integrated on the substrate and connected in series to form a complete loop, and the photosensitive induction layer of the two-dimensional transition metal chalcogenide is adopted, so that the high-efficiency capturing, conversion and output of optical signals are realized, the sensitivity and response speed of optical signal detection are improved, and the structural stability and signal transmission accuracy of the device are ensured.

Inventors

  • ZHAO CHUN
  • ZHANG JINWEI

Assignees

  • 苏州市华芯云睿微电子科技有限公司

Dates

Publication Date
20260505
Application Date
20260205

Claims (10)

  1. 1. The photoelectric sensing element is characterized by comprising a substrate, a transistor module and a photoelectric detection module, wherein the transistor module and the photoelectric detection module are arranged on the substrate, the transistor module comprises a grid electrode, a first dielectric layer, an active layer, a first source electrode, a first drain electrode and a first passivation layer which are sequentially arranged from bottom to top, the grid electrode is arranged on the substrate, the passivation layer covers the first source electrode and the first drain electrode and is filled into a channel between the first source electrode and the first drain electrode, the photoelectric detection module comprises a second dielectric layer, a second source electrode, a second drain electrode and a second passivation layer which are sequentially arranged from bottom to top, the second dielectric layer is arranged on the substrate, the second passivation layer covers the second source electrode and the second drain electrode, the first source electrode, the second drain electrode and an external reading circuit are connected in series to form a loop, the photoelectric detection module further comprises a photosensitive sensing layer which is at least filled into the channel between the second source electrode and the second drain electrode, and the photosensitive sensing layer is made of a two-dimensional transition metal compound.
  2. 2. The optoelectronic sensor element of claim 1, wherein the second dielectric layer is formed from the first dielectric layer extending over the area of the photodetector module.
  3. 3. The optoelectronic sensor element of claim 2, wherein the first dielectric layer comprises a SiO 2 layer adjacent to the substrate and a Si 3 N 4 layer on the SiO 2 layer.
  4. 4. The photo-sensing element of claim 1, wherein the second passivation layer is formed by etching the first passivation layer extending over the photo-detection module region.
  5. 5. The photo-sensing element of claim 1, wherein the second drain is formed by a first drain extension covering a portion of the photo-detection module region.
  6. 6. The optoelectronic sensor device of claim 1, wherein the two-dimensional transition metal chalcogenide is tungsten disulfide or tungsten diselenide or molybdenum disulfide.
  7. 7. The optoelectronic sensor element of claim 1, wherein the material of the active layer is selected from one of α -IGZO, IZTO, IZO, ga 2 O 3 、In 2 O 3 .
  8. 8. A photo-sensor array comprising a plurality of photo-sensor elements according to any one of claims 1-7 arranged in an array, a drive circuit for controlling the transistor modules, and a read circuit for reading the photo-detection modules.
  9. 9. A method for producing a photoelectric sensor according to claim 1, wherein the method comprises the steps of, S1, providing a substrate; s2, depositing a gate electrode layer on the substrate by adopting direct current sputtering, and forming a gate pattern on the gate electrode layer by adopting wet etching; S3, forming a first dielectric layer and a second dielectric layer on the grid electrode and the substrate simultaneously through PECVD; s4, forming an active layer on the first dielectric layer by adopting a radio frequency magnetron sputtering method; S5, depositing a source-drain electrode layer on the active layer and the second dielectric layer by adopting direct current sputtering, and forming a first source electrode, a first drain electrode, a second source electrode and a second drain electrode on the source-drain electrode layer by adopting wet etching; s6, forming passivation layers on the transistor module area and the photoelectric detection module area through PECVD, wherein the passivation layers cover the first source electrode, the first drain electrode, the second source electrode and the second drain electrode, forming the first passivation layer and the second passivation layer on the passivation layers through wet etching, and exposing a channel between the second source electrode and the second drain electrode; s7, providing a temporary substrate; s8, depositing a large-area single-layer photosensitive induction film on the temporary substrate by adopting a CVD method; S9, spin-coating polymethyl methacrylate on the photosensitive sensing film, and baking after coating; And S10, transferring the photosensitive sensing film onto the passivation layer in a wet transfer mode, covering a channel between the second source electrode and the second drain electrode, and forming the photosensitive sensing layer to finally obtain the photoelectric sensing element.
  10. 10. The method according to claim 9, wherein the step S10 comprises, S101, stripping a photosensitive induction film with polymethyl methacrylate from a temporary substrate; s102, transferring a photosensitive induction film with polymethyl methacrylate onto the passivation layer by using deionized water and covering a channel between the second source electrode and the second drain electrode; S103, annealing at 80 ℃ for 30 minutes, then annealing at 120 ℃ for 1 hour, and finally annealing at 150 ℃ for 1 hour to remove moisture; S104, the whole body is put into hot acetone to dissolve polymethyl methacrylate, then isopropanol is adopted to wash, and a photosensitive sensing layer is formed, so that the photoelectric sensing element is finally obtained.

Description

Photoelectric sensing element, photoelectric sensing array and preparation method Technical Field The present invention relates to the field of photoelectric sensors, and more particularly, to a photoelectric sensing element, a photoelectric sensing array, and a method for manufacturing the same Background The optical sensor array technology is used as a core support technology in various fields such as image sensing, optical detection, bionic vision and the like, the performance of the optical sensor array technology directly determines the sensing precision, response speed and environmental adaptability of related application systems, and the optical sensor array technology is widely applied to key scenes such as consumer electronics, industrial detection, automatic driving, biomedical and the like. Currently, the optical sensor array technology is mainly divided into three major categories of traditional image sensor technology, novel photoelectric material-based sensor technology and bionic sensor design technology, and although various technologies have been developed to some extent, a plurality of technical defects still need to be solved in practical application. The traditional image sensor takes a Charge Coupled Device (CCD) and a Complementary Metal Oxide Semiconductor (CMOS) sensor as cores, is based on a silicon-based semiconductor technology, realizes capturing and converting of optical signals through a photodiode array, and is the most widely applied optical sensing scheme at present. However, such sensors have inherent limitations in that, on one hand, they employ a serial architecture of fixed sampling rate for signal acquisition, in combination with "photo-sensing-analog-to-digital conversion-digital processing", not only result in frequent transmission of data between the sensor and the processor, resulting in processing delays of up to hundreds of milliseconds, but also cause significant power consumption due to large amounts of data movement, typically power consumption exceeding 100mW, which is difficult to meet the application requirements of portable, low-power devices, and on the other hand, their dynamic range is relatively fixed (about 60 dB), pixel saturation or noise interference is likely to occur under extreme illumination conditions such as direct glare, low illuminance, or high contrast, which severely affects imaging quality, even though optimization is performed by High Dynamic Range (HDR) techniques, which is difficult to fundamentally solve the problem. In order to break through the limitation of the traditional silicon-based sensor, the industry gradually develops a light sensor technology based on a novel photoelectric material, and mainly comprises an organic photoelectric material, a perovskite material and a low-dimensional material (such as graphene, quantum dots and the like) based sensor. The organic photoelectric material has the advantages of flexibility and large-area preparation, is suitable for flexible devices such as bionic retina and the like, has great potential in the field of high-efficiency photoelectric conversion due to high light absorption coefficient, and has an important direction for improving the response performance of the sensor by virtue of ultra-fast response speed and wide spectral sensitivity. However, the novel sensor technology is still limited by the material preparation and integration process at present, only discrete devices or small passive arrays (such as 4×4 or 8×8 scale) can be usually realized in practical application, and the problem of low integration degree directly causes three major core technical bottlenecks, namely, firstly, the spatial resolution is limited (generally lower than 100 PPI), the requirements of scenes such as high-precision imaging and precise detection cannot be met, secondly, effective isolation is lacking between adjacent pixels, serious charge diffusion and crosstalk phenomena can be generated during dense array integration, the crosstalk rate is generally higher than 15%, the image contrast and signal fidelity are obviously reduced, thirdly, serious impedance mismatch exists between a reading circuit and a sensing unit, so that the response time of the sensor is prolonged to millisecond level, high-speed dynamic scenes with the frame rate higher than 100fps are difficult to capture, and the application of the sensor in dynamic imaging tasks such as high-speed target tracking and real-time gesture recognition is limited. Although the design technology of the bionic sensor (such as an event camera and a pulse output sensor) refers to the working mechanism of the biological retina, the asynchronous output of the light intensity change event or the direct generation of the pulse signal can make a certain progress in the aspects of reducing data redundancy and improving dynamic response, the core sensing unit of the bionic sensor still depends on the traditional silicon-based material or the novel photoel