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CN-121985618-A - Texturing method of crystalline silicon solar cell, solar cell and flower basket

CN121985618ACN 121985618 ACN121985618 ACN 121985618ACN-121985618-A

Abstract

The invention discloses a texturing method of a crystalline silicon solar cell, the solar cell and a flower basket. The texturing method comprises the steps of providing a crystalline silicon substrate, immersing the crystalline silicon substrate in a texturing solution, enabling the texturing solution to react with the crystalline silicon substrate and generate bubbles on the first main surface and the second main surface of the crystalline silicon substrate, and removing the bubbles attached to the first main surface of the crystalline silicon substrate, so that the size of a textured surface formed by the first main surface is smaller than that formed by the second main surface. The wool making method can form the differential wool face structure in one process groove in a one-step etching mode, and effectively simplifies the preparation process of the differential wool face structure.

Inventors

  • ZHANG JINGRUI
  • DUAN GUANGLIANG
  • ZHANG JUNBING

Assignees

  • 晶澳（扬州）太阳能科技有限公司

Dates

Publication Date
20260505
Application Date
20260127

Claims (10)

  1. 1. The texturing method of the crystalline silicon solar cell is characterized by comprising the following steps of: step 1, providing a crystalline silicon substrate, wherein the crystalline silicon substrate comprises a first main surface and a second main surface which are opposite; step 2, immersing the crystalline silicon substrate into a texturing solution, enabling the texturing solution to react with the crystalline silicon substrate and generating bubbles on the first main surface and the second main surface of the crystalline silicon substrate; And 3, removing bubbles attached to the first main surface of the crystalline silicon substrate, so that the size of the suede formed by the first main surface is smaller than that of the suede formed by the second main surface.
  2. 2. The method of claim 1, wherein in the step 2, the first main surface of the crystalline silicon substrate faces the liquid surface of the texturing solution and is parallel to the liquid surface of the texturing solution, and the step 3 comprises: step 31-1, removing bubbles from the first main surface of the crystalline silicon substrate from the texturing solution to the first main surface of the crystalline silicon substrate; step 32-1, re-immersing the first main surface of the crystalline silicon substrate into the texturing solution; optionally, performing steps 31-1 and 32-1 cyclically at a first preset time interval until the pile size of the first main surface and the pile size of the second main surface reach a preset size; Optionally, the first preset time interval is 30 s-60 s, and the cycle times of the step 31-1 and the step 32-1 are 3-7 times.
  3. 3. The method of claim 1, wherein in step 2, the first main surface of the crystalline silicon substrate is parallel to the surface of the texturing solution; The step 3 comprises the following steps: step 31-2, delivering a first fluid to the first main surface of the crystalline silicon substrate, and removing bubbles attached to the first main surface of the crystalline silicon substrate; step 32-2, stopping delivering the first fluid; optionally, the first fluid is inert gas or cleaning liquid, and the first main surface of the crystal silicon substrate is purged by the inert gas or sprayed by the cleaning liquid; Optionally, the distance between the first surface of the crystalline silicon substrate and the liquid level of the texturing solution is 10 mm-40 mm; Optionally, performing steps 31-2 and 32-2 cyclically at a second preset time interval until the pile size of the first main surface and the pile size of the second main surface reach preset sizes; optionally, the second preset time interval is 30 s-60 s, and the cycle times of the step 31-2 and the step 32-2 are 4-6 times.
  4. 4. The method of claim 1, wherein in step 2, the first main surface of the crystalline silicon substrate is perpendicular to the surface of the texturing solution; The step 3 comprises the following steps: step 31-3, delivering a second fluid to the first main surface of the crystalline silicon substrate, and removing bubbles attached to the first main surface of the crystalline silicon substrate; step 32-3, stopping delivering the second fluid; Optionally, the second fluid is inert gas or cleaning liquid, and the first main surface of the crystal silicon substrate is purged by the inert gas or sprayed by the cleaning liquid; optionally, performing steps 31-3 and 32-3 cyclically at a third preset time interval until the pile size of the first main surface and the pile size of the second main surface reach preset sizes; Optionally, the third preset time interval is 30 s-60 s, and the circulation times of the step 31-3 and the step 32-3 are 4-6 times.
  5. 5. The method according to claim 4, wherein a plurality of the crystalline silicon substrates are arranged in a direction parallel to the liquid surface of the texturing solution, the centers of the plurality of the crystalline silicon substrates are positioned on the same straight line parallel to the liquid surface of the texturing solution, a gap is formed between two adjacent crystalline substrates, and the first main surfaces of the two adjacent crystalline substrates face different directions; in step 31-3, the second fluid is delivered into the gap between the first main surfaces of the adjacent two crystal silicon substrates, which are oppositely arranged.
  6. 6. The method of claim 4, wherein a plurality of said crystalline silicon substrates are arranged in a direction parallel to a liquid surface of said etching solution, centers of said plurality of said crystalline silicon substrates are positioned on the same straight line parallel to the liquid surface of said etching solution, a gap is provided between two adjacent ones of said crystalline substrates, and first main surfaces of all of said crystalline silicon substrates face in the same direction.
  7. 7. The method for texturing a crystalline silicon solar cell according to any one of claim 1 to 6, wherein, The crystalline silicon solar cell is a part of a perovskite crystalline silicon laminated solar cell; The perovskite solar cell in the perovskite crystalline silicon stacked solar cell is formed based on the textured structure of the first main surface of the crystalline silicon substrate.
  8. 8. The method for texturing a crystalline silicon solar cell according to claim 7, wherein, The pile face height of the first main surface of the crystalline silicon substrate is 200 nm-500 nm; The second main surface of the crystalline silicon substrate has a suede height of 2-3 mu m.
  9. 9. A solar cell is characterized by comprising the crystalline silicon substrate with the double-sided suede structure prepared by the texturing method according to any one of claims 1 to 8, wherein the suede size of a first main surface of the crystalline silicon substrate is smaller than that of a second main surface of the crystalline silicon substrate; Preferably, the solar cell is a crystalline silicon perovskite laminate cell.
  10. 10. A basket of flowers for use in the texturing method of any one of claims 1 to 8, comprising: The flower basket comprises a flower basket body (10), wherein the flower basket body (10) comprises a plurality of first supporting plates (11) which are arranged vertically at intervals, and the main surfaces of every two adjacent first supporting plates (11) are oppositely arranged; Bearing parts (20) respectively arranged on two main surfaces of the first supporting plate (11); the bearing parts (20) arranged on the opposite main surfaces of each two first supporting plates (11) are matched to bear a horizontally placed crystal silicon substrate (60); The driver is used for driving the bearing part (20) or the flower basket main body (10), and after receiving an instruction, the driver drives the bearing part (20) to move upwards or downwards along the main surface of the first supporting plate (11) or drives the flower basket main body (10) to move upwards or downwards so as to drive the crystal silicon main body (60) to move upwards or downwards; Or the basket of flowers includes: The flower basket comprises a flower basket body (10), wherein the flower basket body (10) comprises a plurality of first supporting plates (11) which are arranged vertically at intervals, and the main surfaces of every two adjacent first supporting plates (11) are oppositely arranged; Bearing parts (20) respectively arranged on two main surfaces of the first supporting plate (11); the bearing parts (20) arranged on the opposite main surfaces of each two first supporting plates (11) are matched to bear a horizontally placed crystal silicon substrate (60); a plurality of first fluid outputters (51) arranged above the flower basket main body (10) at intervals; after receiving the instruction, the plurality of first fluid outputters (51) convey first fluid to the first main surface of the corresponding crystalline silicon matrix (60); Or the basket of flowers includes: the flower basket comprises a flower basket body (10), wherein the flower basket body (10) comprises two second supporting plates (12) which are oppositely arranged up and down; The fixing pieces (13) are arranged at intervals and fixed on two opposite main surfaces of the two second support plates (12), and the fixing pieces (13) distributed on the two second support plates (12) are in one-to-one correspondence; a plurality of second fluid outputters (52) arranged on the second supporting plate (12), wherein at least one second fluid outputter (52) is arranged between two adjacent fixing pieces (13); One fixing piece (13) on one second supporting plate (12) is matched with the fixing piece (13) on the other corresponding second supporting plate (12) to bear a vertically placed crystal silicon substrate (60); the second fluid output device (52) delivers a second fluid to the first main surface of the crystalline silicon substrate (60) to which it is adjacent after receiving the instruction.

Description

Texturing method of crystalline silicon solar cell, solar cell and flower basket Technical Field The invention relates to a texturing method of a crystalline silicon solar cell, the solar cell and a flower basket. Background For crystalline silicon solar cells, particularly crystalline silicon-perovskite stacked solar cells formed based on crystalline silicon solar cells, the roles of the different main surfaces are different, which makes the requirements of the different main surfaces on the textured structure different to a certain extent. Illustratively, for crystalline silicon-perovskite stacked solar cells, a smaller size textured structure is required for the major surface of the perovskite cell closer to the surface of the perovskite cell than for the major surface of the crystalline silicon solar cell farther from the perovskite cell to ensure individual film layer uniformity of the perovskite cell. At present, a mode of preparing a differential suede structure mainly adopts a mask to match with repeated suede making, namely, after primary suede making, a mask for protecting a tower tip is arranged on a main surface of the suede structure with a large size, then secondary suede making is carried out, the main surface side of the tower tip with the mask forms the large-size suede structure in the secondary suede making process, and the main surface of the other side forms the suede structure with a smaller size. The existing texturing mode needs etching solutions with different concentrations, and involves a plurality of process tanks, so that the process is complex and the complexity is high. Disclosure of Invention In view of the above, the invention provides a texturing method of a crystalline silicon solar cell, a solar cell and a flower basket, wherein the texturing method can form a differential textured structure in a process groove in a one-step etching manner, and the preparation process of the differential textured structure is effectively simplified. Specifically, the invention provides the following technical scheme: the invention provides a texturing method of a crystalline silicon solar cell, which comprises the following steps: Step 1, providing a crystalline silicon substrate, wherein the crystalline silicon substrate comprises a first main surface and a second main surface which are opposite; Step 2, immersing the crystalline silicon substrate into a texturing solution, enabling the texturing solution to react with the crystalline silicon substrate and generating bubbles on the first main surface and the second main surface of the crystalline silicon substrate; and 3, removing bubbles attached to the first main surface of the crystalline silicon substrate, so that the size of the suede formed on the first main surface is smaller than that of the suede formed on the second main surface. Optionally, in step 2, the first major surface of the crystalline silicon substrate faces and is parallel to the level of the texturing solution; The step 3 comprises the following steps: Step 31-1, removing bubbles from the first main surface of the crystalline silicon substrate from the texturing solution to the first main surface of the crystalline silicon substrate; Step 32-1, re-immersing the first major surface of the crystalline silicon substrate in the texturing solution. Optionally, steps 31-1 and 32-1 are performed cyclically at first preset time intervals until the pile size of the first main surface and the pile size of the second main surface reach preset sizes. Optionally, the first preset time interval is 30 s-60 s, and the cycle times of the step 31-1 and the step 32-1 are 3-7 times. Optionally, in step 2, the first main surface of the crystalline silicon substrate is parallel to the surface of the texturing solution; The step 3 comprises the following steps: Step 31-2, delivering a first fluid to the first main surface of the crystalline silicon substrate until bubbles attached to the first main surface of the crystalline silicon substrate are removed; Step 32-2, stopping delivering the first fluid. Optionally, the first fluid is an inert gas or a cleaning liquid, and the first main surface of the crystalline silicon substrate is purged with the inert gas or sprayed with the cleaning liquid. Optionally, the distance between the first surface of the crystalline silicon substrate and the liquid level of the texturing solution is 10 mm-40 mm. Optionally, steps 31-2 and 32-2 are performed cyclically at a second preset time interval until the pile size of the first main surface and the pile size of the second main surface reach the preset size. Optionally, the second preset time interval is 30 s-60 s, and the cycle times of the step 31-2 and the step 32-2 are 4-6 times. Optionally, in step 2, the first main surface of the crystalline silicon substrate is perpendicular to the liquid surface of the texturing solution; The step 3 comprises the following steps: step 31-3, delivering a second fl