CN-121985620-A - Gallium nitride/perovskite heterojunction composite material and preparation method and application thereof

Abstract

The invention provides a gallium nitride/perovskite heterojunction material, a preparation method and application thereof. The preparation method comprises the steps of (a) completely dissolving cesium halide and lead halide in dimethyl sulfoxide according to a certain molar ratio, then adding an antisolvent to separate out yellow precipitate, centrifuging the yellow precipitate, and drying in vacuum to obtain the perovskite powder, and (b) preparing the heterojunction composite material by adopting a physical vapor deposition process, placing the obtained perovskite powder into a crucible, placing the crucible under a gallium nitride substrate, vacuumizing, heating the crucible at a certain temperature to enable the perovskite to be melted and evaporated, reaching the substrate above, and maintaining a certain temperature and a certain rotation speed of the substrate, so that the compact and uniform silicon/perovskite composite material can be obtained after a certain period of time. The method provides a new idea for preparing the gallium nitride/perovskite heterojunction material.

Inventors

• ZOU GUIFU
• CHEN YUAN
• Hu Guijia
• WANG YONGSHU
• Shi Hongcao
• GAO LIANG

Assignees

• 山东科技大学

Dates

Publication Date

20260505

Application Date

20260202

Claims (6)

1. 1. A gallium nitride/perovskite heterojunction composite material is characterized in that, The heterojunction composite material is formed by growing perovskite powder on the surface of a gallium nitride material through a physical vapor deposition method.
2. 2. The gallium nitride/perovskite heterojunction composite material according to claim 1, wherein the thickness of the heterojunction composite material is 10-20 μm.
3. 3. A method of preparing a gallium nitride/perovskite heterojunction composite material as claimed in claim 1, comprising the steps of: (a) The perovskite powder is synthesized by completely dissolving cesium halide and lead halide in dimethyl sulfoxide according to a certain molar ratio, then adding an antisolvent to separate out precipitate, centrifuging the precipitate, and drying in vacuum to obtain perovskite powder; (b) Preparing heterojunction composite material by physical vapor deposition process, placing the obtained perovskite powder into a crucible, placing the crucible under a gallium nitride substrate, vacuumizing, heating the crucible at a certain temperature to melt and evaporate the perovskite, and reaching the substrate above, wherein the substrate needs to maintain a certain temperature and rotating speed, and obtaining the gallium nitride/perovskite heterojunction composite material after a certain time.
4. 4. A method of preparing a gallium nitride/perovskite heterojunction composite material according to claim 3, wherein in step (a), the molar ratio of cesium halide to lead halide is 1:1 and the antisolvent is toluene.
5. 5. A method of preparing a gallium nitride/perovskite heterojunction composite material according to claim 3, wherein in step (b), the vacuum degree is lower than 10 -3 Pa, the temperature of heating the crucible is 400 ℃, the temperature of maintaining the substrate is 400 ℃, the rotation speed is 10r/min, and the preparation time is 5min.
6. 6. Use of a gallium nitride/perovskite heterojunction composite material as claimed in claim 1 or 2 in a photo-detector of the photoconductive type.

Description

Gallium nitride/perovskite heterojunction composite material and preparation method and application thereof Technical Field The invention relates to the field of photoelectric materials, in particular to a gallium nitride/perovskite heterojunction composite material, a preparation method and application thereof. Background Gallium nitride is used as a third generation wide bandgap semiconductor material and has wide application prospect in the fields of photoelectric devices and electronic devices. The band gap of the material is 3.39 eV, and the material has excellent characteristics of high heat conductivity, high temperature resistance, radiation resistance, high chemical stability and the like, so that the material plays an important role in photodetectors, high-power microwave devices and high-brightness Light Emitting Diodes (LEDs). Especially, gallium nitride-based photodetectors are widely used in the fields of military, medicine, industrial monitoring, etc., due to their high sensitivity to ultraviolet light and low dark current performance. The perovskite material (the chemical formula ABX 3) has remarkable application potential in the fields of solar cells, photodetectors, LEDs and the like due to excellent optical properties, such as adjustable emission spectrum, narrow full width at half maximum (FWHM), high photoluminescence quantum yield (PLQY) and the like. The heterojunction formed by combining gallium nitride and perovskite materials is an effective technical path, and the comprehensive performance of the photoelectric device can be remarkably improved. Although the combination of gallium nitride and perovskite has remarkable advantages in theory, the prior art still has a plurality of problems in the actual preparation process, and the combination of gallium nitride and perovskite is easy to form defects, and the defects can lead to the increase of the recombination rate of photo-generated carriers, reduce the efficiency of devices, and have the advantages of complex preparation process, higher cost and the like of high-quality gallium nitride materials. Thus, there is a need for a low cost method of preparing high quality gallium/perovskite heterojunction materials. Disclosure of Invention In view of the above-mentioned shortcomings, the present invention aims to provide a gallium nitride/perovskite heterojunction material, and a preparation method and application thereof. The method has low cost, and the prepared heterojunction material has wide application prospect in the field of photoconductive type photodetectors. In order to achieve the above purpose, the invention is realized by the following technical scheme: the invention provides a gallium nitride/perovskite heterojunction composite material, which is formed by growing perovskite powder on the surface of a gallium nitride material through a physical vapor deposition method. Preferably, the heterojunction composite material has a thickness of 10-20 μm. The invention also provides a preparation method of the gallium nitride/perovskite heterojunction composite material, which comprises the following steps: (a) The perovskite powder is synthesized by completely dissolving cesium halide and lead halide in dimethyl sulfoxide according to a certain molar ratio, then adding an antisolvent to separate out precipitate, centrifuging the precipitate, and drying in vacuum to obtain perovskite powder; (b) Preparing heterojunction composite material by physical vapor deposition process, placing the obtained perovskite powder into a crucible, placing the crucible under a gallium nitride substrate, vacuumizing, heating the crucible at a certain temperature to melt and evaporate the perovskite, and reaching the substrate above, wherein the substrate needs to maintain a certain temperature and rotating speed, and obtaining the gallium nitride/perovskite heterojunction composite material after a certain time. Preferably, in step (a), the molar ratio of cesium halide to lead halide is 1:1 and the antisolvent is toluene. Preferably, in step (b), the vacuum is lower than 10 -3 Pa, the temperature for heating the crucible is 400 ℃, the temperature for maintaining the substrate is 400 ℃, the rotating speed is 10r/min, and the preparation time is 5min. The invention also provides application of the gallium nitride/perovskite heterojunction composite material in a photoconductive type photoelectric detector. The gallium nitride/perovskite heterojunction material prepared by adopting the physical vapor deposition method has the advantages of high uniformity, low cost, simple method and large-scale popularization and application, and is beneficial to forming high-quality gallium nitride/perovskite heterojunction in a low-pressure environment in the preparation process. Drawings FIG. 1 is a physical diagram of an embodiment of the present invention; FIG. 2 is an X-ray diffraction pattern of a perovskite made in accordance with the present invention; FIG. 3