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CN-121985632-A - Multiband absorber suitable for near infrared band and photoelectric detector

CN121985632ACN 121985632 ACN121985632 ACN 121985632ACN-121985632-A

Abstract

The invention relates to measurement of infrared light intensity and spectrum content, in particular to a multiband absorber applicable to near infrared bands and a photoelectric detector. The absorber comprises a substrate layer, a transition metal nitride layer and a distributed Bragg reflector which are stacked in sequence. The invention can realize near infrared multiband high-efficiency absorption, each absorption peak has high efficiency, can cover the wide-band photoelectric detection requirement in the near infrared band range, can be widely applied to the fields of multiband photoelectric detectors, tamm plasmon devices, thermo-optical detection and the like, has high-temperature stability and long-term reliability, can overcome the problems of oxidization and easy failure of traditional noble metals in near infrared waves Duan Yi, has a simple structure, can realize the target function only by layering and stacking the substrate layer, the transition metal nitride layer and the distributed Bragg reflector film, does not need complex device design, and has the advantages of simple process, low cost and easy large-area preparation.

Inventors

  • JING ZHIMIN
  • XIONG YUBING
  • MOU GUITING
  • DENG HONG

Assignees

  • 重庆理工大学

Dates

Publication Date
20260505
Application Date
20260403

Claims (8)

  1. 1. A multiband absorber suitable for near infrared bands is characterized by comprising a substrate layer (1), a transition metal nitride layer (2) and a distributed Bragg reflector (3) which are sequentially stacked.
  2. 2. A multiband absorber suitable for the near infrared band according to claim 1, wherein the transition metal nitride layer (2) is made of any one of titanium nitride (TiN), vanadium Nitride (VN), zirconium nitride (ZrN), hafnium nitride (HfN).
  3. 3. A multiband absorber adapted for near infrared band according to claim 1, characterized in that the DBR mirror (3) comprises N periodically alternating layers of a first dielectric layer (31) and a second dielectric layer (32); one of the first dielectric layer (31) and the second dielectric layer (32) is made of gallium arsenide (GaAs), and the other is made of aluminum arsenide (AlAs) or aluminum gallium arsenide (AlGaAs); N is an integer greater than or equal to 1.
  4. 4. A multiband absorber, suitable for the near infrared range, according to claim 3, characterized in that a dielectric layer made of gallium arsenide (GaAs) in the DBR mirror (3) is connected to the transition metal nitride layer (2).
  5. 5. A multiband absorber according to claim 3, wherein N is not less than 2 and not more than 8.
  6. 6. A multiband absorber according to claim 3, wherein the thickness of the transition metal nitride layer (2) is 60 nm to 120 nm; The thickness of the one with the higher refractive index in the first dielectric layer (31) and the second dielectric layer (32) is 130-300 nanometers, and the thickness of the one with the lower refractive index is 98-240 nanometers.
  7. 7. A multiband absorber suitable for the near infrared range as claimed in claim 1, characterized in that the substrate layer (1) is made of silicon (Si).
  8. 8. A photodetector comprising an absorber as claimed in any one of the claims 1 to 7.

Description

Multiband absorber suitable for near infrared band and photoelectric detector Technical Field The invention relates to measurement of infrared light intensity and spectrum content (corresponding IPC (industrial personal computer) classification number G01J), in particular to a multiband absorber and a photoelectric detector which are applicable to near infrared wave bands. Background The multiband photoelectric detector has important application value in the fields of optical communication, spectral analysis, infrared imaging, environment monitoring and the like. The traditional photoelectric absorption device usually depends on intrinsic band gap of materials to realize absorption, is difficult to cover a wide band or realize multimodal absorption in a single device, and has the defects of limited absorption efficiency, complex device structure and high preparation cost. In recent years, light absorption can be achieved in a specific wavelength band by coupling a distributed bragg reflector (distributed Bragg reflector, abbreviated as DBR) with a metal layer to form a tower (Tamm) type plasmon mode. However, conventional noble metals such as gold (Au) and silver (Ag) have problems of poor thermal stability, low durability and the like in the near infrared band, and the reliability and practical application of the device are limited. Disclosure of Invention In view of this, the present invention provides a multiband absorber and a photodetector suitable for near infrared band, which aim to realize the efficient absorption of near infrared band and have durability at the same time, so as to meet the practical application requirements of multiband photoelectric detection. In order to solve the technical problems, the invention adopts the following technical scheme: A multiband absorber suitable for near infrared band comprises a substrate layer, a transition metal nitride layer and a distributed Bragg reflector which are stacked in sequence. As an alternative embodiment, the transition metal nitride layer is made of any one of titanium nitride (TiN), vanadium Nitride (VN), zirconium nitride (ZrN), hafnium nitride (HfN). As an alternative implementation mode, the distributed Bragg reflector comprises N first dielectric layers and N second dielectric layers which are alternately stacked periodically, wherein one of the first dielectric layers and the second dielectric layers is made of gallium arsenide (GaAs), the other one is made of aluminum arsenide (AlAs) or aluminum gallium arsenide (AlGaAs), and N is an integer larger than or equal to 1. As an alternative embodiment, a dielectric layer made of gallium arsenide (GaAs) in the distributed bragg mirror is connected to the transition metal nitride layer. As an alternative embodiment, the N is equal to or greater than 2 and equal to or less than 8. As an alternative implementation mode, the thickness of the transition metal nitride layer is 60-120 nanometers, the thickness of one of the first dielectric layer and the second dielectric layer with a higher refractive index is 130-300 nanometers, and the thickness of one of the first dielectric layer and the second dielectric layer with a lower refractive index is 98-240 nanometers. As an alternative embodiment, the base layer is made of silicon (Si). A photodetector comprising an absorber as hereinbefore described. In summary, compared with the prior art, the invention has the advantages and beneficial effects that the near infrared multiband high-efficiency absorption can be realized, each absorption peak has high efficiency, the wide-band photoelectric detection requirement in the near infrared band range can be covered, the invention can be widely applied to the fields of multiband photoelectric detectors, tamm plasmon devices, thermo-optical detection and the like, the performances and the application flexibility are considered, the transition metal nitride layer has high-temperature stability and long-term reliability, the problems of oxidization and easy failure of the traditional noble metal in the near infrared wave Duan Yi can be overcome, the structure is simple, the target function can be realized only through the layered stacking of the substrate layer-the transition metal nitride layer-the distributed Bragg reflector film, the design of complex devices is not needed, the complex nano processing technology such as electron beam lithography is also not needed, and the invention has the advantages of simple technology, low cost and easy large-area preparation. Drawings Fig. 1 is a schematic diagram of a stacked structure of absorbers according to the present invention. Fig. 2 is an absorption spectrum of an absorber according to an embodiment. FIG. 3 is a graph showing the absorption spectrum of the absorber when noble metal gold (Au) is used instead of titanium nitride (TiN) in the first embodiment. Fig. 4 is an absorption spectrum corresponding to the absorber when noble metal silver (Ag) is used inst