CN-121985640-A - Light-emitting diode chip and preparation method thereof

Abstract

The disclosure provides a light emitting diode chip and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially stacked, wherein the P-type semiconductor layer comprises an undoped sub-layer and a doped sub-layer which are stacked together, the doped sub-layer comprises a first high temperature Wen Xiangceng, a second high temperature phase layer and a third high temperature Xiang Ceng which are sequentially stacked, and a precursor material of the undoped sub-layer and the doped sub-layer is TEGa. The method can ensure the crystallization quality and the high doping concentration.

Inventors

• YU GUOXIN
• LV PING
• CHEN ZHANGXIAOXIONG
• Mao Jiatian

Assignees

• 京东方华灿光电(广东)有限公司

Dates

Publication Date

20260505

Application Date

20251212

Claims (10)

1. 1. A light emitting diode chip, characterized by comprising an N-type semiconductor layer (10), an active layer (20) and a P-type semiconductor layer (30) which are stacked in sequence; the P-type semiconductor layer (30) comprises an undoped sub-layer (310) and a doped sub-layer (320) which are stacked together, the doped sub-layer (320) comprises a first high temperature Wen Xiangceng (321), a second high temperature phase layer (322) and a third high temperature Xiang Ceng (323) which are stacked in sequence, and precursor materials of the undoped sub-layer (310) and the doped sub-layer (320) are TEGa.
2. 2. The light emitting diode chip of claim 1, wherein the undoped sub-layer (310) has a thickness of 10-30 nm and the doped sub-layer (320) has a thickness of 60-100 nm.
3. 3. The light emitting diode chip of claim 1, wherein the first height Wen Xiangceng (321) comprises MgGaN layers and MgN layers alternately stacked periodically, the number of cycles of the first height Wen Xiangceng (321) is 4 to 8, and the thickness of the first height Wen Xiangceng (321) is 3 to 15nm.
4. 4. The light emitting diode chip according to claim 1, wherein the second high temperature phase layer (322) includes MgGaN layers and MgN layers alternately stacked periodically, the number of cycles of the second high temperature phase layer (322) is 6 to 12, and the thickness of the first high temperature Wen Xiangceng (321) is 10 to 20nm.
5. 5. The light-emitting diode chip according to claim 1, wherein the third high temperature Xiang Ceng (323) includes MgAlGaN layers and MgN layers alternately stacked periodically, the number of cycles of the third high temperature Xiang Ceng (323) is 8 to 15, and the thickness of the first high temperature Wen Xiangceng (321) is 30 to 80nm.
6. 6. The light emitting diode chip of claim 1, wherein the Mg doping concentration of the first high Wen Xiangceng (321), the second high temperature phase layer (322), and the third high temperature Xiang Ceng (323) is 1 x 10 17 /cm 3 ～1*10 20 /cm 3 .
7. 7. A method of manufacturing a light emitting diode chip, comprising: Preparing an N-type semiconductor layer (10); Preparing an active layer (20); And sequentially preparing an undoped sub-layer (310) and a doped sub-layer (320) to obtain the P-type semiconductor layer (30), wherein the doped sub-layer (320) comprises a first high-temperature Wen Xiangceng (321), a second high-temperature phase layer (322) and a third high-temperature Xiang Ceng (323) which are sequentially stacked, and precursor materials of the undoped sub-layer (310) and the doped sub-layer (320) are TEGa.
8. 8. The method of preparing according to claim 7, wherein preparing the first height Wen Xiangceng (321) comprises: Setting the preparation temperature to 800-1050 ℃, and setting the doping concentration of Mg to 1 x 10 17 /cm 3 ～1*10 20 /cm 3 ; Setting the number of periods to be 4-8, and alternately and periodically growing MgGaN layers and MgN layers to obtain the first height Wen Xiangceng (321) with the thickness of 3-15 nm.
9. 9. The method of preparing according to claim 7, characterized in that preparing the second high temperature phase layer (322) comprises: Setting the preparation temperature to 800-1050 ℃, and setting the doping concentration of Mg to 1 x 10 17 /cm 3 ～1*10 20 /cm 3 ; Setting the number of cycles to be 6-12, and alternately and periodically growing MgGaN layers and MgN layers to obtain the second high-temperature phase layer (322) with the thickness of 10-20 nm.
10. 10. The method of manufacturing according to claim 7, wherein manufacturing the third high temperature Xiang Ceng (323) comprises: Setting the preparation temperature to 800-1050 ℃, and setting the doping concentration of Mg to 1 x 10 17 /cm 3 ～1*10 20 /cm 3 ; And setting the number of cycles to 8-15, and alternately and periodically growing MgAlGaN layers and MgN layers to obtain the third high temperature Xiang Ceng (323) with the thickness of 30-80 nm.

Description

Light-emitting diode chip and preparation method thereof Technical Field The disclosure belongs to the technical field of semiconductors, and in particular relates to a light emitting diode chip and a preparation method thereof. Background A light emitting Diode (LIGHT EMITTING Diode, LED) is a semiconductor Diode that can convert electrical energy into light energy. In the related art, P-type GaN is provided in an epitaxial layer of a light emitting diode chip, which functions to provide holes and hole expansion. In practical application, high Mg doping and better crystal quality are ensured, so that better current expansion effect and normal appearance yield can be achieved, and TMGa is adopted as a precursor material for the P-type GaN. However, since TMGa decomposition and reaction with NH 3 require a higher temperature (1020-1100 ℃) to ensure the crystallization quality, while high Mg doping concentrations (greater than 1E19/cm 3) require a lower temperature, high doping results in only reduced temperature growth, resulting in a sacrifice of crystallization quality. In addition, in the deposition apparatus, since the fixed plate of the reaction chamber is close to the surface of the wafer, the problem of In precipitation is easily caused by long-time high-temperature baking. Disclosure of Invention The embodiment of the disclosure provides a light-emitting diode chip and a preparation method thereof, which can ensure the crystallization quality and the high doping concentration, and can not cause In precipitation. The technical scheme is as follows: In one aspect, an embodiment of the present disclosure provides a light emitting diode chip, including an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked in order; The P-type semiconductor layer comprises an undoped sub-layer and a doped sub-layer which are stacked together, the doped sub-layer comprises a first high-temperature Wen Xiangceng, a second high-temperature phase layer and a third high-temperature Xiang Ceng which are stacked in sequence, and precursor materials of the undoped sub-layer and the doped sub-layer are TEGa. In another implementation of the disclosure, the thickness of the undoped sub-layer is 10-30 nm, and the thickness of the doped sub-layer is 60-100 nm. In yet another implementation of the present disclosure, the first height Wen Xiangceng includes MgGaN layers and MgN layers that are alternately stacked periodically, the number of cycles of the first height Wen Xiangceng is 4-8, and the thickness of the first height Wen Xiangceng is 3-15 nm. In yet another implementation of the present disclosure, the second high temperature phase layer includes MgGaN layers and MgN layers that are alternately and periodically stacked, the number of cycles of the second high temperature phase layer is 6 to 12, and the thickness of the first high temperature Wen Xiangceng is 10 to 20nm. In yet another implementation of the present disclosure, the third high temperature Xiang Ceng includes MgAlGaN layers and MgN layers that are alternately and periodically stacked, the number of cycles of the third high temperature Xiang Ceng is 8 to 15, and the thickness of the first high temperature Wen Xiangceng is 30 to 80nm. In yet another implementation of the present disclosure, the Mg doping concentration of the first high Wen Xiangceng, the second high-temperature phase layer, the third high-temperature Xiang Ceng is 1 x 10 17/cm3～1*1020/cm3. In another aspect, an embodiment of the present disclosure provides a method for manufacturing a light emitting diode chip, including: preparing an N-type semiconductor layer; preparing an active layer; And sequentially preparing an undoped sub-layer and a doped sub-layer to obtain the P-type semiconductor layer, wherein the doped sub-layer comprises a first high-temperature Wen Xiangceng, a second high-temperature phase layer and a third high-temperature Xiang Ceng which are sequentially stacked, and precursor materials of the undoped sub-layer and the doped sub-layer are TEGa. In yet another implementation of the present disclosure, preparing the first high temperature phase layer includes: Setting the preparation temperature to 800-1050 ℃, and setting the doping concentration of Mg to 1 x 10 17/cm3～1*1020/cm3; setting the number of cycles to be 4-8, and alternately and periodically growing MgGaN layers and MgN layers to obtain the first high-temperature phase layer with the thickness of 3-15 nm. In yet another implementation of the present disclosure, preparing the second high temperature phase layer includes: Setting the preparation temperature to 800-1050 ℃, and setting the doping concentration of Mg to 1 x 10 17/cm3～1*1020/cm3; Setting the number of cycles to be 6-12, and alternately and periodically growing MgGaN layers and MgN layers to obtain the second high-temperature phase layer with the thickness of 10-20 nm. In yet another implementation of the present disclosure, p