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CN-121985641-A - Light emitting diode, preparation method thereof and communication system

CN121985641ACN 121985641 ACN121985641 ACN 121985641ACN-121985641-A

Abstract

The invention relates to the technical field of semiconductors, and provides a light emitting diode, a preparation method thereof and a communication system. The light emitting diode comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the active layer comprises at least one group of quantum well layers and quantum barrier layers which are alternately stacked periodically, the quantum well layers comprise an In component, the active layer further comprises at least one covering layer, the covering layer is positioned between the quantum well layers and the quantum barrier layers, the material of the covering layer is selected from III-V nitride semiconductor materials, and the bond energy of a chemical bond formed by a metal element and a nitrogen element contained In the III-V nitride semiconductor materials is higher than the bond energy of In-N formed by an indium element and a nitrogen element In the quantum well layers. Through the arrangement, the mutual diffusion of In atoms In the quantum well containing In components is effectively inhibited, the clear interface of the quantum well layer is maintained, and then high-speed LED communication is realized.

Inventors

  • LI HONGJIAN
  • LI PANPAN
  • LI GUANQI
  • Li Jincha
  • HUANG KAI
  • ZHANG RONG

Assignees

  • 厦门大学

Dates

Publication Date
20260505
Application Date
20251219

Claims (18)

  1. 1. A light emitting diode is characterized by comprising a substrate, a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially laminated on the substrate; The active layer comprises at least one group of quantum well layers and quantum barrier layers which are alternately laminated periodically, the quantum well layers comprise an In component, the active layer further comprises at least one covering layer, the covering layer is positioned between the quantum well layers and the quantum barrier layers, the material of the covering layer is selected from III-V nitride semiconductor materials, and the bond energy of a chemical bond formed by a metal element and a nitrogen element contained In the III-V nitride semiconductor materials is higher than the bond energy of In-N formed by an indium element and a nitrogen element In the quantum well layers.
  2. 2. The light-emitting diode according to claim 1, wherein the material of the cover layer is one or more selected from GaN, alGaN, alInGaN.
  3. 3. The light-emitting diode according to claim 1, wherein the thickness of the cap layer is smaller than the thickness of the quantum well layer, or the thickness of the cap layer is smaller than the thickness of the quantum barrier layer, or the thickness of the cap layer is smaller than both the thickness of the quantum well layer and the thickness of the quantum barrier layer.
  4. 4. The light-emitting diode according to claim 1, wherein the In component In the quantum well layer is between 0.10 and 0.45, and the light-emitting diode has an emission wavelength between 500nm and 750 nm.
  5. 5. The light-emitting diode according to claim 2, wherein when the material of the cover layer is selected from Al x Ga （1-x） N, 0.03< x <0.7, and when the material of the cover layer is selected from Al y In z Ga （1-y-z） N, 0.03< y <0.7.
  6. 6. The light-emitting diode according to claim 2, wherein 0.1< x <0.3 when the material of the cover layer is selected from Al x Ga （1-x） N, and 0.1< y <0.3 when the material of the cover layer is selected from Al y In z Ga （1-y-z） N.
  7. 7. The light-emitting diode according to claim 1, wherein the thickness of the cover layer is between 0.5nm and 3 nm.
  8. 8. The light-emitting diode according to any one of claims 1 to 7, wherein an interface interruption process is performed at an interface of the quantum well layer, an interface of the cap layer, or both during the growth of the active layer, the interface interruption process is performed by stopping the supply of the metal organic source and introducing a process gas, and the process gas is selected from a mixture of one or more of nitrogen, hydrogen, and ammonia.
  9. 9. The light-emitting diode according to claim 8, wherein the quantum well layer has an interface root mean square roughness of less than 3nm.
  10. 10. The light-emitting diode according to claim 8, wherein the quantum well layer has an interface root mean square roughness of less than 0.5nm.
  11. 11. The light emitting diode of claim 8, wherein the light emitting diode has a modulation bandwidth of greater than 100MHz under the-3 dB standard.
  12. 12. The light emitting diode of claim 8, wherein the light emitting diode has a modulation bandwidth of greater than 1GHz under the-3 dB standard.
  13. 13. The light-emitting diode of claim 1, wherein the second semiconductor layer comprises an electron blocking layer and a p-type nitride layer, the electron blocking layer is located above the active layer and is made of a wide bandgap material, and the p-type nitride layer is selected from GaN or InGaN.
  14. 14. The light-emitting diode according to claim 1, further comprising a transparent electrode and an n-type electrode, wherein the transparent electrode is positioned on a light emitting side of the light-emitting diode and is electrically connected with the second semiconductor layer, and the n-type electrode is positioned on a non-light emitting side of the light-emitting diode and is electrically connected with the first semiconductor layer.
  15. 15. The preparation method of the light-emitting diode is characterized by comprising the following steps of: Providing a substrate; Sequentially growing a first semiconductor layer, an active layer and a second semiconductor layer on the substrate, wherein the active layer comprises at least one group of quantum well layers and quantum barrier layers which are alternately grown In a periodic manner, the quantum well layers comprise an In component, and the active layer further comprises at least one covering layer, and the covering layer is positioned between the quantum well layers and the quantum barrier layers; In the process of growing the active layer, performing interface interruption treatment at least once, wherein the interface interruption treatment comprises stopping supplying a metal organic source and introducing a treatment gas, and the treatment gas is selected from any one or a mixture gas of a plurality of nitrogen, hydrogen and ammonia; the execution time of the interface interrupt processing is selected from at least one of the following: after the quantum well layers are grown, the corresponding covering layers are grown; After growing at least one of the cover layers, before growing the corresponding quantum barrier layer; And after the quantum well layer is grown and the interface interruption treatment is carried out, a layer of covering layer is grown again, and the corresponding quantum barrier layer is grown.
  16. 16. The method of claim 15, wherein the interface interruption is performed at a temperature of 500-1000 ℃ and the flow rate of the process gas is 500 sccm~100000 sccm, or the interface interruption is performed at a temperature of 700-900 ℃ and the flow rate of the process gas is 500 sccm~5000 sccm, respectively, for 2-30 seconds.
  17. 17. The method of manufacturing a light-emitting diode according to claim 15, wherein the material of the cap layer is selected from group III-V nitride semiconductor materials, and the bonding energy of a chemical bond formed by a metal element and a nitrogen element contained In the group III-V nitride semiconductor materials is higher than the bonding energy of In-N formed by an indium element and a nitrogen element In the quantum well layer.
  18. 18. A communication system comprising the light emitting diode of any one of claims 1-14, wherein the communication system has a data transmission rate greater than 1Gbps.

Description

Light emitting diode, preparation method thereof and communication system Technical Field The present invention relates to the field of semiconductor technologies, and in particular, to a light emitting diode, a method for manufacturing the light emitting diode, and a communication system. Background Light Emitting Diodes (LEDs) have been widely used in the fields of lighting, display, etc. as efficient, stable solid state light sources. In recent years, with the development of technologies such as visible light communication, there is a higher demand for the photoelectric performance of LEDs. In an LED, the emission wavelength is achieved by adjusting the indium (In) composition In the active layer quantum well. In general, a longer emission wavelength can be obtained by increasing the In component. However, the higher In component can cause significant lattice mismatch between the quantum well and the adjacent layer, thereby causing the order of interface atomic arrangement to be out of order, increasing the interface roughness, forming a large number of crystal defects, and besides, the combination energy of In atoms In the nitride lattice is lower, and In atoms are easy to diffuse outwards from the quantum well In the subsequent high-temperature epitaxial process, so that the performances of the LED such as luminous efficiency, wavelength stability and the like are further deteriorated. Disclosure of Invention In order to solve the technical problems that In atoms In the quantum well layer containing In components are easy to diffuse outwards and the interface roughness is high In the prior art, the invention provides a light-emitting diode which comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially laminated on the substrate; the active layer comprises at least one group of quantum well layers and quantum barrier layers which are alternately laminated periodically, the quantum well layers comprise an In component, the active layer further comprises at least one covering layer, the covering layer is positioned between the quantum well layers and the quantum barrier layers, the material of the covering layer is selected from III-V nitride semiconductor materials, and the bond energy of a chemical bond formed by a metal element and a nitrogen element contained In the III-V nitride semiconductor materials is higher than the bond energy of In-N formed by an indium element and a nitrogen element In the quantum well layers. In one embodiment, the material of the cover layer is selected from one or more of GaN, alGaN, alInGaN. In an embodiment, the thickness of the capping layer is less than the thickness of the quantum well layer, or the thickness of the capping layer is less than the thickness of the quantum barrier layer, or the thickness of the capping layer is less than both the thickness of the quantum well layer and the thickness of the quantum barrier layer. In one embodiment, the In component In the quantum well layer is between 0.10 and 0.45, and the emission wavelength of the light emitting diode is between 500nm and 750 nm. In one embodiment, when the material of the cover layer is selected from Al xGa（1-x） N, 0.03< x <0.7, and when the material of the cover layer is selected from Al yInzGa（1-y-z） N, 0.03< y <0.7. In one embodiment, 0.1< x <0.3 when the material of the cover layer is selected from Al xGa（1-x） N, and 0.1< y <0.3 when the material of the cover layer is selected from Al yInzGa（1-y-z） N. In an embodiment, the thickness of the covering layer is between 0.5nm and 3 nm. In an embodiment, in the growth process of the active layer, an interface interruption process is performed at the interface of the quantum well layer, the interface of the cover layer or both, wherein the interface interruption process is to stop the supply of the metal organic source and introduce a process gas, and the process gas is selected from a mixed gas of any one or more of nitrogen, hydrogen and ammonia. In one embodiment, the quantum well layer has an interface root mean square roughness of less than 3nm. In one embodiment, the quantum well layer has an interface root mean square roughness of less than 0.5nm. In one embodiment, the light emitting diode has a modulation bandwidth of greater than 100MHz under the-3 dB standard. In one embodiment, the light emitting diode has a modulation bandwidth of greater than 1GHz under the-3 dB standard. In an embodiment, the second semiconductor layer includes an electron blocking layer and a p-type nitride layer, the electron blocking layer is located on the active layer, a wide forbidden band material is adopted, and the p-type nitride layer can be selected from one of GaN or InGaN. In an embodiment, the light emitting diode further includes a transparent electrode and an n-type electrode, wherein the transparent electrode is located on a light emitting side of the light emitting diode and is electrical