CN-121985642-A - Light emitting diode and preparation method thereof

CN121985642ACN 121985642 ACN121985642 ACN 121985642ACN-121985642-A

Abstract

The disclosure provides a light emitting diode and a preparation method thereof, and belongs to the technical field of semiconductors. The light emitting diode includes a first semiconductor layer, a first multi-quantum well layer, a second multi-quantum well layer, and a second semiconductor layer, which are sequentially stacked. The first multi-quantum well layer comprises a plurality of first quantum well layers and a plurality of first quantum barrier layers which are alternately stacked, the second multi-quantum well layer comprises a plurality of second quantum well layers and a plurality of second quantum barrier layers which are alternately stacked, the first quantum barrier layers and the second quantum barrier layers are AlGaAsP layers, and the content of Al components in the second quantum barrier layers is smaller than that in the first quantum barrier layers. The present disclosure may increase the brightness of a light emitting diode.

Inventors

LI ZEYU
ZHANG XIANG
WANG ZHILIANG
Diao Zichun
JIANG JIAN
XING ZHENYUAN

Assignees

京东方华灿光电(苏州)有限公司

Dates

Publication Date: 20260505
Application Date: 20251219

Claims (10)

1. A light emitting diode, characterized in that the light emitting diode comprises a first semiconductor layer (1), a first multiple quantum well layer (2), a second multiple quantum well layer (3) and a second semiconductor layer (4) which are laminated in order; The first multi-quantum well layer (2) comprises a plurality of first quantum well layers (21) and a plurality of first quantum barrier layers (22) which are alternately stacked, and the second multi-quantum well layer (3) comprises a plurality of second quantum well layers (31) and a plurality of second quantum barrier layers (32) which are alternately stacked; the first quantum barrier layer (22) and the second quantum barrier layer (32) are AlGaAsP layers, and the content of Al components in the second quantum barrier layer (32) is smaller than that in the first quantum barrier layer (22).
2. The light emitting diode of claim 1, wherein the Al composition content in the first quantum barrier layer (22) is greater than 0.3 and less than 0.4 and the Al composition content in the second quantum barrier layer (32) is greater than 0.1 and less than 0.2.
3. The light emitting diode according to claim 1 or 2, wherein the number of the first quantum well layers (21) is 6 to 8, and the number of the first quantum barrier layers (22) is 6 to 8.
4. The light emitting diode according to claim 1 or 2, wherein the number of the second quantum well layers (31) is 4 to 6, and the number of the second quantum barrier layers (32) is 4 to 6.
5. The light emitting diode according to claim 1 or 2, characterized in that the thickness of the first quantum well layer (21) and the second quantum well layer (31) is 20 nm-30 nm.
6. The light emitting diode according to claim 1 or 2, characterized in that the thickness of the first quantum barrier layer (22) and the second quantum barrier layer (32) is 30 nm-40 nm.
7. A light emitting diode according to claim 1 or 2, characterized in that the first semiconductor layer (1) comprises a first waveguide layer (11), the first waveguide layer (11) is an AlGaAs layer, and the Al component content in the first waveguide layer (11) is more than 0.3 and less than 0.4.
8. A light emitting diode according to claim 1 or 2, characterized in that the second semiconductor layer (4) comprises a second waveguide layer (41), the second waveguide layer (41) is an AlGaAs layer, and the Al component content in the second waveguide layer (41) is more than 0.1 and less than 0.2.
9. The light emitting diode according to claim 8, characterized in that the second semiconductor layer (4) further comprises a second stress transition layer (43); The second stress transition layer (43) is an AlGaAsP layer, and the Al component content and the As component content in the second stress transition layer (43) are monotonically reduced along the direction from the first semiconductor layer (1) to the second semiconductor layer (4).
10. A method of manufacturing a light emitting diode, the method comprising: Forming a first semiconductor layer, a first multiple quantum well layer, a second multiple quantum well layer and a second semiconductor layer which are sequentially stacked; The first multi-quantum well layer comprises a plurality of first quantum well layers and a plurality of first quantum barrier layers which are alternately stacked, and the second multi-quantum well layer comprises a plurality of second quantum well layers and a plurality of second quantum barrier layers which are alternately stacked; the first quantum barrier layer and the second quantum barrier layer are AlGaAsP layers, and the content of Al components in the second quantum barrier layer is smaller than that in the first quantum barrier layer.

Description

Light emitting diode and preparation method thereof Technical Field The disclosure belongs to the technical field of semiconductors, and in particular relates to a light emitting diode and a preparation method thereof. Background As an energy-saving device, light emitting diodes are widely used in fields of full-color display, illumination, vehicle lamps, and the like. In the related art, the light emitting diode includes a multi-quantum well layer, and a first semiconductor layer and a second semiconductor layer located at both sides of the multi-quantum well layer. Wherein the multiple quantum well layer comprises a plurality of quantum well layers and a plurality of quantum barrier layers which are alternately laminated. The quantum barrier layer is an AlGaAsP layer, and the thickness is 10 nm-20 nm. However, in the multiple quantum well layer, each quantum barrier layer has the same forbidden bandwidth due to the fixed composition, and the energy blocking to carriers is uniform. The quantum barrier layer is required to have higher blocking capability to bind the electron in the quantum well, while the hole has low mobility and is difficult to cross the potential barrier, and the quantum barrier layer is required to have lower blocking capability to smoothly enter the quantum well. Therefore, the structure provided in the related art cannot meet different transportation requirements of electrons and holes at the same time, so that unbalance of carrier injection and uneven interlayer distribution are caused, non-radiative recombination loss is further aggravated, and finally the device has limited luminous efficiency. Disclosure of Invention The embodiment of the disclosure provides a light emitting diode and a preparation method thereof, which can improve the brightness of the light emitting diode. The technical scheme is as follows: The embodiment of the disclosure provides a light emitting diode, which comprises a first semiconductor layer, a first multi-quantum well layer, a second multi-quantum well layer and a second semiconductor layer which are sequentially stacked. The first multi-quantum well layer comprises a plurality of first quantum well layers and a plurality of first quantum barrier layers which are alternately stacked, the second multi-quantum well layer comprises a plurality of second quantum well layers and a plurality of second quantum barrier layers which are alternately stacked, the first quantum barrier layers and the second quantum barrier layers are AlGaAsP layers, and the content of Al components in the second quantum barrier layers is smaller than that in the first quantum barrier layers. In yet another implementation of the present disclosure, the Al component content in the first quantum barrier layer is greater than 0.3 and less than 0.4 and the Al component content in the second quantum barrier layer is greater than 0.1 and less than 0.2. In yet another implementation of the present disclosure, the number of first quantum well layers is 6-8, and the number of first quantum barrier layers is 6-8. In yet another implementation of the present disclosure, the number of the second quantum well layers is 4 to 6, and the number of the second quantum barrier layers is 4 to 6. In yet another implementation of the present disclosure, the thickness of the first quantum well layer and the second quantum well layer is 20nm to 30nm. In yet another implementation of the present disclosure, the first quantum barrier layer and the second quantum barrier layer are each 30nm to 40nm thick. In yet another implementation of the present disclosure, the first semiconductor layer includes a first waveguide layer, the first waveguide layer is an AlGaAs layer, and an Al component content in the first waveguide layer is greater than 0.3 and less than 0.4. In yet another implementation of the present disclosure, the second semiconductor layer includes a second waveguide layer, the second waveguide layer is an AlGaAs layer, and an Al component content in the second waveguide layer is greater than 0.1 and less than 0.2. In yet another implementation of the present disclosure, the second semiconductor layer further includes a compliant second stress transition layer, the second stress transition layer being an AlGaAsP layer, the Al component content and the As component content in the second stress transition layer each decreasing monotonically along a direction from the first semiconductor layer toward the second semiconductor layer. On the other hand, the embodiment of the disclosure also provides a preparation method of the light-emitting diode, which comprises the steps of forming a first semiconductor layer, a first quantum well layer, a second multi-quantum well layer and a second semiconductor layer which are sequentially stacked, wherein the first multi-quantum well layer comprises a plurality of first quantum well layers and a plurality of first quantum barrier layers which are alternately stacke