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CN-121985643-A - Light emitting diode and preparation method thereof

CN121985643ACN 121985643 ACN121985643 ACN 121985643ACN-121985643-A

Abstract

The disclosure provides a light emitting diode and a preparation method thereof, and belongs to the technical field of semiconductors. The light emitting diode comprises an n-type semiconductor layer, a multiple quantum well layer and a p-type semiconductor layer which are sequentially stacked, wherein the multiple quantum well layer comprises at least one superlattice structure and at least two first structures, each side of the superlattice structure is provided with one first structure, each first structure comprises at least one quantum well layer and at least one quantum barrier layer, the quantum well layer and the quantum barrier layer are alternately stacked in the first structure, the superlattice structure comprises a plurality of first sub-layers and a plurality of second sub-layers, the first sub-layers and the second sub-layers are alternately stacked, and the forbidden bandwidths of the first sub-layers and the second sub-layers are different. The present disclosure may increase the brightness of a light emitting diode.

Inventors

  • FAN WENCHAO
  • Diao Zichun
  • WANG ZHILIANG
  • XU LUYI

Assignees

  • 京东方华灿光电(苏州)有限公司

Dates

Publication Date
20260505
Application Date
20251219

Claims (10)

  1. 1. A light emitting diode characterized by comprising an n-type semiconductor layer (2), a multiple quantum well layer (1) and a p-type semiconductor layer (3) laminated in this order; The multiple quantum well layer (1) comprises at least one superlattice structure (11) and at least two first structures (12), one first structure (12) being on each side of the superlattice structure (11); Each first structure (12) comprises at least one quantum well layer (121) and at least one quantum barrier layer (122), in the first structure (12), the quantum well layers (121) and the quantum barrier layers (122) are alternately laminated; The superlattice structure (11) comprises a plurality of first sublayers (111) and a plurality of second sublayers (112), wherein the first sublayers (111) and the second sublayers (112) are alternately stacked, and the forbidden bandwidths of the first sublayers (111) and the second sublayers (112) are different.
  2. 2. The light emitting diode according to claim 1, wherein the first sub-layer (111) and the second sub-layer (112) contain different kinds of elements or contain the same kind of elements but different content of the same kind of element components, and wherein the first sub-layer (111) and the second sub-layer (112) each include P element, and at least one group III element.
  3. 3. The light emitting diode according to claim 2, wherein the first sub-layer (111) is AlGaP, alInP, gaInP or an AlGaInP layer; The second sub-layer (112) is a GaP layer.
  4. 4. The light-emitting diode according to claim 2, wherein the first sub-layer (111) and the second sub-layer (112) are all AlGaP layers, an Al composition of the first sub-layer (111) is higher than an Al composition in the second sub-layer (112), and an absolute value of an Al composition difference of the first sub-layer (111) and the second sub-layer (112) is not less than 0.2.
  5. 5. The light emitting diode according to any one of claims 1-4, wherein the number of first sub-layers (111) is 5-10 and the number of second sub-layers (112) is 5-10.
  6. 6. The light emitting diode according to any one of claims 1-4, wherein the thickness of the first sub-layer (111) is 0.5nm to 1.5nm; the thickness of the second sub-layer (112) is 0.5-1.5 nm.
  7. 7. The light emitting diode according to any one of claims 1 to 4, wherein the composition content of the same element in each of the plurality of first sub-layers (112) is constant or gradually changed layer by layer in a direction toward the n-type semiconductor layer (2); And/or; in the plurality of second sublayers (112), the component content of the same element in each second sublayer (112) is constant or gradually changed from layer to layer along the direction towards the n-type semiconductor layer (2).
  8. 8. The light-emitting diode according to any one of claims 1 to 4, wherein the number of quantum well layers (121) in the multiple quantum well layer (1) is 10 to 30, and the number of quantum barrier layers (122) is 10 to 30.
  9. 9. A light emitting diode according to any one of claims 1-4, characterized in that the n-type semiconductor layer (2) comprises an n-type confinement layer (23), the n-type confinement layer (23) being an AlInP layer and having a doping concentration of 4 x 10 17 ~6×10 17 /cm 3 .
  10. 10. A method of manufacturing a light emitting diode, the method comprising: Forming an n-type semiconductor layer, a multiple quantum well layer and a p-type semiconductor layer which are sequentially stacked; the multiple quantum well layer comprises at least one superlattice structure and at least two first structures, wherein each side of the superlattice structure is provided with one first structure; Each of the first structures includes at least one quantum well layer and at least one quantum barrier layer, in which the quantum well layers and the quantum barrier layers are alternately stacked; The superlattice structure comprises a plurality of first sublayers and a plurality of second sublayers, wherein the first sublayers and the second sublayers are alternately laminated, and the first sublayers and the second sublayers are different in forbidden band width.

Description

Light emitting diode and preparation method thereof Technical Field The disclosure belongs to the technical field of semiconductors, and in particular relates to a light emitting diode and a preparation method thereof. Background As an energy-saving device, light emitting diodes are widely used in fields of full-color display, illumination, vehicle lamps, and the like. In the related art, the light emitting diode includes a multi-quantum well layer, and an n-type semiconductor layer and a p-type semiconductor layer located at both sides of the multi-quantum well layer. The multi-quantum well layer comprises a periodic structure formed by a plurality of quantum well layers and a plurality of quantum barrier layers alternately. The quantum well layer and the quantum barrier layer are all AlGaInP layers. The Al component content in the quantum well layer is less than the Al component content in the quantum barrier layer. However, since the conduction band and the valence band of AlGaInP are smaller, the quantum well layer has limited capability of limiting carriers, and particularly at high temperature or high current density, carriers easily escape to form leakage current, resulting in a decrease in radiation recombination efficiency. Disclosure of Invention The embodiment of the disclosure provides a light emitting diode and a preparation method thereof, which can improve the brightness of the light emitting diode. The technical scheme is as follows: The embodiment of the disclosure provides a light emitting diode, which comprises an n-type semiconductor layer, a multiple quantum well layer and a p-type semiconductor layer which are sequentially stacked, wherein the multiple quantum well layer comprises at least one superlattice structure and at least two first structures, each side of the superlattice structure is provided with one first structure, each first structure comprises at least one quantum well layer and at least one quantum barrier layer, the quantum well layers and the quantum barrier layers are alternately stacked in the first structures, the superlattice structure comprises a plurality of first sub-layers and a plurality of second sub-layers, the first sub-layers and the second sub-layers are alternately stacked, and the forbidden bandwidths of the first sub-layers and the second sub-layers are different. In yet another implementation of the present disclosure, the first and second sublayers include different kinds of elements or the same kind of elements but different content of the same kind of element components, and each of the first and second sublayers includes a P element and at least one group III element. In yet another implementation of the present disclosure, the first sub-layer is AlGaP, alInP, gaInP or an AlGaInP layer and the second sub-layer is a GaP layer. In yet another implementation of the present disclosure, the number of the first sub-layers is 5 to 10, and the number of the second sub-layers is 5 to 10. In yet another implementation of the present disclosure, the first and second sublayers are all AlGaP layers, the Al composition of the first sublayer is higher than the Al composition in the second sublayer, and the absolute value of the Al composition difference of the first and second sublayers is not less than 0.2. In yet another implementation of the present disclosure, the first sub-layer has a thickness of 0.5nm to 1.5nm, and the second sub-layer has a thickness of 0.5nm to 1.5nm. In yet another implementation of the present disclosure, the composition content of the same element in each of the plurality of first sublayers is fixed or gradually changed layer by layer in a direction toward the n-type semiconductor layer, and/or the composition content of the same element in each of the plurality of second sublayers is fixed or gradually changed layer by layer in a direction toward the n-type semiconductor layer. In still another implementation of the present disclosure, the number of quantum well layers in the multiple quantum well layers is 10-30, and the number of quantum barrier layers is 10-30. In yet another implementation of the present disclosure, the n-type semiconductor layer includes an n-type confinement layer, the n-type confinement layer is an AlInP layer, and the doping concentration is 4×10 17~6×1017/cm3. On the other hand, the embodiment of the disclosure also provides a preparation method of the light-emitting diode, which comprises the steps of forming an n-type semiconductor layer, a multiple quantum well layer and a p-type semiconductor layer which are sequentially stacked, wherein the multiple quantum well layer comprises at least one superlattice structure and at least two first structures, each side of the superlattice structure is provided with one first structure, each first structure comprises at least one quantum well layer and at least one quantum barrier layer, the quantum well layers and the quantum barrier layers are alternately stacked