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CN-121985645-A - Light emitting diode and manufacturing method thereof

CN121985645ACN 121985645 ACN121985645 ACN 121985645ACN-121985645-A

Abstract

The disclosure provides a light emitting diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises an n-type semiconductor layer, a multiple quantum well layer, an insertion layer and a p-type semiconductor layer which are sequentially stacked together, wherein the n-type semiconductor layer and the p-type semiconductor layer both comprise GaN layers, and the insertion layer is a C-doped GaN layer. The method can weaken the Stark effect and improve the electron-hole recombination luminous efficiency in the multi-quantum well layer.

Inventors

  • ZHANG LEICHENG
  • CHEN ZHANGXIAOXIONG
  • QU LIMIN

Assignees

  • 京东方华灿光电(广东)有限公司

Dates

Publication Date
20260505
Application Date
20251208

Claims (10)

  1. 1. A light emitting diode characterized by comprising an n-type semiconductor layer (1), a multiple quantum well layer (2), an insertion layer (3) and a p-type semiconductor layer (4) laminated in this order; wherein the n-type semiconductor layer (1) and the p-type semiconductor layer (4) each comprise a GaN layer; The insertion layer (3) is a C-doped GaN layer.
  2. 2. A light emitting diode according to claim 1, characterized in that the doping concentration of C in the insertion layer (3) is 8 x 10 17 cm -3 ~2×10 18 cm -3 .
  3. 3. The light emitting diode according to claim 1 or 2, characterized in that the thickness of the insertion layer (3) is 40 nm-80 nm.
  4. 4. The light emitting diode according to claim 1 or 2, characterized in that the multiple quantum well layer (2) comprises a plurality of first periodic structures formed by quantum barrier layers (21) and quantum well layers (22); The quantum barrier layer (21) comprises an interface quantum barrier layer (211) in contact with the insertion layer (3) and an intermediate quantum barrier layer (212) positioned on one side of the interface quantum barrier layer (211) facing the n-type semiconductor layer (1), wherein the interface quantum barrier layer (211) is a GaN layer or an AlGaN layer, and the intermediate quantum barrier layer (212) is a GaN layer.
  5. 5. The light emitting diode of claim 4, wherein the interface quantum barrier layer (211) has a thickness of 30nm to 60nm.
  6. 6. The light emitting diode of claim 4, wherein the intermediate quantum barrier layer (212) has a thickness of 13nm to 15nm.
  7. 7. The light emitting diode according to claim 4, wherein the quantum well layer (22) has a thickness of 2.5nm to 3nm.
  8. 8. The light emitting diode according to any of claims 1-2, 5-7, characterized in that the light emitting diode further comprises a shallow quantum well layer (5); The shallow quantum well layer (5) is located between the n-type semiconductor layer (1) and the multiple quantum well layer (2), and the shallow quantum well layer (5) comprises a plurality of second periodic structures formed by shallow barrier layers (51) and shallow well layers (52).
  9. 9. A method for manufacturing a light emitting diode, the method comprising: forming an n-type semiconductor layer, a multiple quantum well layer, an insertion layer and a p-type semiconductor layer which are sequentially stacked; the n-type semiconductor layer and the p-type semiconductor layer both comprise a GaN layer, and the insertion layer is a C-doped GaN layer.
  10. 10. The method according to claim 9, wherein when the insertion layer is formed, a growth temperature in a reaction chamber of the organometallic chemical vapor deposition apparatus is controlled to 850 ℃ to 870 ℃ and a pressure is controlled to 75 torr to 125torr, C 2 H 4 gas is introduced into the reaction chamber as a carbon source, and a reaction atmosphere in the reaction chamber is a mixed gas of N 2 and H 2 .

Description

Light emitting diode and manufacturing method thereof Technical Field The disclosure belongs to the technical field of semiconductors, and in particular relates to a light emitting diode and a manufacturing method thereof. Background Light emitting diodes have been widely used in many applications such as lighting, display backlights, and direct microdisplays. In the related art, the light emitting diode includes an n-type semiconductor layer, a multiple quantum well layer, and a p-type semiconductor layer. Wherein, the n-type semiconductor layer and the p-type semiconductor layer are both GaN layers. The multi-quantum well layer includes periodically arranged quantum wells and quantum barriers. The quantum well is formed of InGaN film layers. The quantum barrier is formed of a GaN film layer. However, since GaN is a hexagonal compound semiconductor, its crystal lattice is stacked in an AB/AB. This inherent crystal structure causes a significant spontaneous polarization effect to exist in the device, thereby generating an internal spontaneous polarization electric field. Furthermore, in the multiple quantum well layer, inGaN quantum wells as light emitting centers are subjected to strong compressive stress due to lattice constant mismatch between InGaN and GaN. This stress further induces piezoelectric polarization, creating an additional polarized electric field. Finally, the strong built-in electric field formed by the spontaneous polarization and the piezoelectric polarization can lead to the energy band in the quantum well to incline, so that the quantum confinement Stark effect of carrier space separation is caused, and the luminous efficiency of the light-emitting diode is affected. Disclosure of Invention The embodiment of the disclosure provides a light-emitting diode and a manufacturing method thereof, which can weaken the Stark effect and improve the electron-hole recombination luminous efficiency in a multi-quantum well layer. The technical scheme is as follows: The disclosed embodiments provide a method. The light-emitting diode comprises an n-type semiconductor layer, a multiple quantum well layer, an insertion layer and a p-type semiconductor layer which are sequentially stacked together, wherein the n-type semiconductor layer and the p-type semiconductor layer both comprise GaN layers, and the insertion layer is a C-doped GaN layer. In yet another implementation of the present disclosure, the doping concentration of C in the insertion layer is 8×10 17cm-3~2×1018cm-3. In yet another implementation of the present disclosure, the thickness of the insertion layer is 40nm to 80nm. In yet another implementation of the present disclosure, the multiple quantum well layer includes a plurality of first periodic structures formed of quantum barriers and quantum wells, wherein the quantum barrier layer includes an interface quantum barrier layer in contact with the insertion layer and an intermediate quantum barrier layer located on a side of the interface quantum barrier layer facing the n-type semiconductor layer, the interface quantum barrier layer being a GaN layer or an AlGaN layer, the intermediate quantum barrier layers being both GaN layers. In yet another implementation of the present disclosure, the interface quantum barrier has a thickness of 30nm to 60nm. In yet another implementation of the present disclosure, the intermediate quantum barrier has a thickness of 13nm to 15nm. In yet another implementation of the present disclosure, the quantum well has a thickness of 2.5nm to 3nm. In yet another implementation of the present disclosure, the light emitting diode further includes a shallow quantum well layer between the n-type semiconductor layer and the multiple quantum well layer, the shallow quantum well layer including a plurality of second periodic structures formed by shallow barrier layers and shallow well layers. On the other hand, the embodiment of the disclosure also provides a manufacturing method of the light-emitting diode, which comprises the steps of forming an n-type semiconductor layer, a multiple quantum well layer, an insertion layer and a p-type semiconductor layer which are sequentially stacked, wherein the n-type semiconductor layer and the p-type semiconductor layer both comprise GaN layers, and the insertion layer is a C-doped GaN layer. In still another implementation manner of the disclosure, when the insertion layer is formed, a growth temperature in a reaction cavity of an organic metal chemical vapor deposition device is controlled to be 850-870 ℃, a pressure is controlled to be 75-125 torr, C 2H4 gas is introduced into the reaction cavity as a carbon source, and a reaction atmosphere in the reaction cavity is a mixed gas of N 2 and H 2. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that: When the light emitting diode provided by the embodiments of the present disclosure is used, since the light emitting diode includes