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CN-121985647-A - Micro light-emitting diode and preparation method thereof

CN121985647ACN 121985647 ACN121985647 ACN 121985647ACN-121985647-A

Abstract

The present disclosure provides a micro light emitting diode and a preparation method thereof, which belong to the technical field of photoelectron manufacturing. The light emitting diode comprises an epitaxial layer and a reflecting layer positioned on one side of the epitaxial layer, wherein the thickness of the reflecting layer is 0.9-1.3 mu m, and the reflectivity of the central wavelength of the reflecting layer is more than or equal to 95%. The method and the device can improve the problem that the reflection effect of the reflection layer of the miniature light-emitting diode is poor.

Inventors

  • YAN FAN
  • LIU XIAOYA
  • TANG MIAO
  • WANG NING
  • ZHAO XIANG

Assignees

  • 京东方华灿光电(广东)有限公司

Dates

Publication Date
20260505
Application Date
20251211

Claims (10)

  1. 1. A light emitting diode, characterized in that the light emitting diode comprises an epitaxial layer (10) and a reflective layer (20) located on one side of the epitaxial layer (10), the reflective layer (20) has a thickness of 0.9 μm to 1.3 μm, and the reflective layer (20) has a center wavelength reflectivity of 95% or more.
  2. 2. The light emitting diode according to claim 1, characterized in that the thickness of the reflective layer (20) is 0.9 μm to 1.1 μm when the light emission color of the epitaxial layer (10) is blue; when the light emitting color of the epitaxial layer (10) is green, the thickness of the reflecting layer (20) is 0.9 μm to 1.1 μm; When the light emission color of the epitaxial layer (10) is red, the thickness of the reflective layer (20) is 1 [ mu ] m to 1.3 [ mu ] m.
  3. 3. The light emitting diode according to claim 2, wherein the reflective layer (20) comprises 7 to 8 first material layers (21) and 7 to 8 second material layers (22) alternately stacked, the first material layers (21) having a refractive index greater than that of the second material layers (22).
  4. 4. A light emitting diode according to claim 3, characterized in that the light emission color of the epitaxial layer (10) is blue; the thickness of the first material layer (21) is 47nm to 50nm, and the thickness of the second material layer (22) is 77nm to 80nm.
  5. 5. The light emitting diode according to claim 4, wherein the reflectivity of the reflective layer (20) for light having a wavelength of 400nm to 540nm is greater than or equal to 95%.
  6. 6. A light emitting diode according to claim 3, characterized in that the light emitting colour of the epitaxial layer (10) is green; the thickness of the first material layer (21) is 54nm to 57nm, and the thickness of the second material layer (22) is 88nm to 91nm.
  7. 7. The light emitting diode according to claim 6, wherein the reflectivity of the reflective layer (20) for light having a wavelength of 480nm to 600nm is greater than or equal to 95%.
  8. 8. A light emitting diode according to claim 3, characterized in that the light emitting colour of the epitaxial layer (10) is red; the thickness of the first material layer (21) is 62nm to 68nm, and the thickness of the second material layer (22) is 100nm to 110nm.
  9. 9. The light emitting diode according to claim 8, wherein the reflectivity of the reflective layer (20) for light having a wavelength of 540nm to 710nm is greater than or equal to 95%.
  10. 10. A method of manufacturing a light emitting diode, the method comprising: Providing a substrate; forming an epitaxial layer on the substrate; And forming a reflecting layer on the surface of the epitaxial layer, wherein the thickness of the reflecting layer is 0.9-1.3 mu m, and the central wavelength reflectivity of the reflecting layer is more than or equal to 95%.

Description

Micro light-emitting diode and preparation method thereof Technical Field The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular, to a micro light emitting diode and a method for manufacturing the same. Background Micro light emitting diodes (Micro LIGHT EMITTING Diode for short) are ultra-small light emitting diodes with a side length of several micrometers to tens of micrometers, and the Micro light emitting diodes have small size, can be densely arranged to greatly improve resolution, and have self-luminous characteristics, and are superior to liquid crystal displays in terms of high brightness, high contrast, high reactivity and power saving. In the related art, in order to enhance the light emitting effect of the light emitting diode, a distributed bragg reflector (Distributed Bragg Reflector, DBR) layer is generally disposed on the backlight side of the light emitting diode. Because of the small size of the micro light emitting diode, an excessively thick DBR layer increases the height of the micro light emitting diode, which increases difficulty in subsequent mass transfer, while an excessively thin DBR layer affects the reflection effect. Disclosure of Invention The embodiment of the disclosure provides a micro light emitting diode and a preparation method thereof, which can solve the problem of poor reflection effect of a reflection layer of the micro light emitting diode. The technical scheme is as follows: In one aspect, embodiments of the present disclosure provide a light emitting diode including an epitaxial layer and a reflective layer located at one side of the epitaxial layer, the reflective layer having a thickness of 0.9 μm to 1.3 μm, and a center wavelength reflectivity of the reflective layer being greater than or equal to 95%. In one implementation manner of the embodiment of the disclosure, when the light-emitting color of the epitaxial layer is blue, the thickness of the reflecting layer is 0.9 μm to 1.1 μm, when the light-emitting color of the epitaxial layer is green, the thickness of the reflecting layer is 0.9 μm to 1.1 μm, and when the light-emitting color of the epitaxial layer is red, the thickness of the reflecting layer is 1 μm to 1.3 μm. In another implementation of an embodiment of the present disclosure, the reflective layer includes 7 to 8 first material layers and 7 to 8 second material layers alternately stacked, the first material layers having a refractive index greater than that of the second material layers. In another implementation manner of the embodiment of the disclosure, the light emitting color of the epitaxial layer is blue, the thickness of the first material layer is 47nm to 50nm, and the thickness of the second material layer is 77nm to 80nm. In another implementation of the disclosed embodiments, the reflective layer has a reflectivity of greater than or equal to 95% for light having a wavelength of 400nm to 540 nm. In another implementation manner of the embodiment of the disclosure, the light emitting color of the epitaxial layer is green, the thickness of the first material layer is 54nm to 57nm, and the thickness of the second material layer is 88nm to 91nm. In another implementation of the disclosed embodiments, the reflective layer has a reflectivity of greater than or equal to 95% for light having a wavelength of 480nm to 600 nm. In another implementation manner of the embodiment of the disclosure, the light emitting color of the epitaxial layer is red, the thickness of the first material layer is 62nm to 68nm, and the thickness of the second material layer is 100nm to 110nm. In another implementation of the disclosed embodiments, the reflective layer has a reflectivity of greater than or equal to 95% for light having a wavelength of 540nm to 710 nm. In another aspect, an embodiment of the present disclosure provides a method for manufacturing a light emitting diode, including providing a substrate, forming an epitaxial layer on the substrate, forming a reflective layer on a surface of the epitaxial layer, wherein a thickness of the reflective layer is 0.9 μm to 1.3 μm, and a central wavelength reflectivity of the reflective layer is greater than or equal to 95%. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that at least: The light emitting diode provided by the embodiment of the disclosure controls the thickness of the reflective layer to be 0.9 μm to 1.3 μm. Compared with the prior art that the DBR layer is designed into a thicker structure due to high reflectivity, the Micro LED is tiny in size, the overall height of the device can be greatly increased by the excessively thick DBR layer, the requirements on adsorption, alignment and bonding precision are increased during subsequent mass transfer, and the yield is difficult to guarantee. The thickness of the reflecting layer is controlled to be about 1 mu m, so that the reflecting layer can be mat