CN-121985650-A - Semiconductor device structure, forming method thereof and semiconductor chip

Abstract

The semiconductor device structure comprises a substrate, a dielectric layer and a plurality of microlenses, wherein the substrate comprises a light-emitting table top, the light-emitting surface of the light-emitting table top is provided with an opaque first doping type ohmic contact layer, the dielectric layer is positioned on the substrate, the microlenses are positioned on the dielectric layer, the microlenses are arranged on the light-emitting table top, and the projection of the bottom surface central area of at least one microlens of the microlenses on the plane of the light-emitting surface is not overlapped with the projection of the first doping type ohmic contact layer on the plane of the light-emitting surface. The proposal can improve the small angle light emitting ratio and the intensity of the micro lens in the optical projection device so as to improve the brightness of the projection picture.

Inventors

• JIN GUANGRONG

Assignees

• 上海显耀显示科技股份有限公司

Dates

Publication Date

20260505

Application Date

20241025

Claims (20)

1. 1. A semiconductor device structure, comprising: a substrate comprising a light emitting mesa, the light emitting surface of the light emitting table top is provided with an opaque ohmic contact layer of a first doping type; the dielectric layer is positioned on the substrate; A plurality of microlenses on the dielectric layer; The light-emitting table top is provided with a plurality of micro lenses, and the projection of the central area of the bottom surface of at least one micro lens of the plurality of micro lenses on the plane where the light-emitting surface is located is not overlapped with the projection of the first doping type ohmic contact layer on the plane where the light-emitting surface is located.
2. 2. The semiconductor device structure of claim 1, wherein the first doping type ohmic contact layer is a stack of a gold layer and a germanium layer.
3. 3. The semiconductor device structure of claim 1, wherein each microlens is a spherical cap structure, and the plurality of microlenses are arranged in an array.
4. 4. The semiconductor device structure of claim 1, wherein the dielectric layer and the plurality of microlenses are an integrally formed structure.
5. 5. The semiconductor device structure of claim 1, wherein bottom edges of adjacent microlenses meet.
6. 6. The semiconductor device structure of claim 1, wherein an area of the first doping type ohmic contact layer is smaller than an area of a light emitting face of the light emitting mesa.
7. 7. The semiconductor device structure of claim 1, wherein the substrate further comprises a passivation layer on at least the sidewalls of the light emitting mesa and the light emitting surface and exposing the first doping type ohmic contact layer.
8. 8. The semiconductor device structure of claim 7, wherein a light transmittance of a material of the passivation layer is greater than a first predetermined light transmittance threshold.
9. 9. The semiconductor device structure of claim 8, wherein the first predetermined light transmittance threshold value is greater than or equal to 85%.
10. 10. The semiconductor device structure of claim 7, wherein the substrate further comprises a first doped indium tin oxide layer overlying the passivation layer and the first doped ohmic contact layer, the dielectric layer being on the first doped indium tin oxide layer; the distance between the top surface of the first doping type indium tin oxide layer and the bottom surface of the micro lens satisfies the following formula: Where H represents a distance between a top surface of the first doping type indium tin oxide layer and a bottom surface of the microlens, n lens represents a refractive index of the microlens, and ρ represents a curvature of a curved surface of the microlens.
11. 11. The semiconductor device structure of claim 1, wherein, The material of the dielectric layer is selected from one or more of SiO 2 、SiN x and GaP, PMMA, PDMS; And/or the number of the groups of groups, The material of the microlenses is selected from one or more of the group consisting of SiO 2 、SiN x , gaP, PMMA, PDMS.
12. 12. The semiconductor device structure of claim 1, wherein the light emitting mesa has opposing first and second faces, the light emitting face being located at the first face; The substrate further comprises: and the second doping type ohmic contact layer is positioned on the second surface of the light emitting mesa, and the second doping type is different from the first doping type.
13. 13. The semiconductor device structure of claim 12, wherein the material of the second doping type ohmic contact layer is indium tin oxide.
14. 14. The semiconductor device structure of claim 1, wherein the light emitting mesa has opposing first and second faces, the light emitting face being located at the first face; The substrate further comprises: The first surface of the driving backboard is provided with a second doping type electrode, and the first surface of the driving backboard is bonded with the second surface of the light-emitting table top.
15. 15. The semiconductor device structure of claim 14, wherein the substrate further comprises: a first conductive bonding layer located on the second face of the light emitting mesa; A second conductive bonding layer located on the first surface of the driving back plate; The first surface of the driving backboard is bonded with the second surface of the light-emitting table top through the first conductive bonding layer and the second conductive bonding layer.
16. 16. The semiconductor device structure of claim 10, wherein the substrate further comprises a first doping type electrode surrounding the light emitting mesa and electrically connected to the first doping type indium tin oxide layer.
17. 17. A method of forming a semiconductor device structure, comprising: Forming a substrate, wherein the substrate comprises a light-emitting table top, and a light-emitting surface of the light-emitting table top is provided with an opaque ohmic contact layer of a first doping type; forming a dielectric layer and a plurality of microlenses on the light emitting mesa and the first doping type ohmic contact layer; The light-emitting table top is provided with a plurality of micro lenses, and the projection of the central area of the bottom surface of at least one micro lens of the plurality of micro lenses on the plane where the light-emitting surface is located is not overlapped with the projection of the first doping type ohmic contact layer on the plane where the light-emitting surface is located.
18. 18. The method of claim 17, wherein forming a dielectric layer and a plurality of microlenses over the light emitting mesa and the first doping type ohmic contact layer comprises: Forming a dielectric material layer on the light emitting mesa and the first doping type ohmic contact layer; Coating photoresist on the surface of the dielectric material layer, and etching the photoresist to form a plurality of columnar photoresist structures; and etching the dielectric material layer based on the columnar photoresist structures to form the dielectric layer and the microlenses, wherein the microlenses are positioned on the surface of the dielectric layer, and the columnar photoresist structures and the microlenses are in one-to-one correspondence.
19. 19. The method of claim 18, wherein etching the dielectric material layer based on the plurality of columnar photoresist structures to form the dielectric layer and the plurality of microlenses comprises: Heating and curing the columnar photoresist structures to obtain spherical crown-shaped photoresist structures; and etching the dielectric material layer by taking the spherical crown-shaped photoresist structures as masks to form the dielectric layer and the microlenses.
20. 20. The method of claim 18, wherein after forming the dielectric layer and the plurality of microlenses, the method further comprises: and (3) adopting a re-growth process to re-grow the microlenses so as to enable the edges of the bottom surfaces of the adjacent microlenses to be connected.

Description

Semiconductor device structure, forming method thereof and semiconductor chip Technical Field The present invention relates to the field of optical devices, and in particular, to a semiconductor device structure, a method for forming the same, and a semiconductor chip. Background With the vigorous development of science and technology, optical projection technology has matured, and the application field of optical projection devices, especially light miniature projection devices, has become wider and wider. For example, in augmented reality (Augmented Reality, AR) smart wearable devices (e.g., AR glasses), there is a high demand for lightweight miniature projection devices. In conventional optical projection devices, for each light emitting mesa of a Micro-LED display chip, the optical path of the light emitted by that light emitting mesa is typically adjusted using a corresponding single microlens to form a projection screen. However, in some Micro-LED display chips, the N-type ohmic contact layer disposed on each light emitting mesa is formed by using an opaque material, and only a single microlens is disposed on the N-type ohmic contact layer, and there is a large area overlapping area between the central area of the microlens and the projection of the N-type ohmic contact layer on the light emitting surface of the light emitting mesa, which results in that the light emitted from the light emitting mesa to the central area of the microlens is largely blocked by the N-type ohmic contact layer, reducing the duty ratio and intensity of the light emitted from the microlens at a small angle (wherein the light emitting angle of the microlens may refer to the angle between the light emitted from the microlens and the normal perpendicular to the bottom surface of the microlens), and further resulting in insufficient brightness of the projected image, which affects the user experience. Disclosure of Invention The invention solves the technical problem of how to improve the small-angle light-emitting ratio and intensity of the micro lens in the optical projection device so as to improve the brightness of a projection picture. In order to solve the technical problems, the embodiment of the invention provides a semiconductor device structure, which comprises a substrate, a dielectric layer and a plurality of microlenses, wherein the substrate comprises a light-emitting table top, the light-emitting surface of the light-emitting table top is provided with an opaque first doping type ohmic contact layer, the dielectric layer is positioned on the substrate, the microlenses are positioned on the dielectric layer, the microlenses are arranged on the light-emitting table top, and the projection of the bottom surface center area of at least one microlens of the microlenses on the plane of the light-emitting surface is not overlapped with the projection of the first doping type ohmic contact layer on the plane of the light-emitting surface. Optionally, the first doping type ohmic contact layer is a stacked structure of a gold layer and a germanium layer. Optionally, each microlens is in a spherical cap structure, and the microlenses are arranged in an array. Optionally, the dielectric layer and the microlenses are an integrally formed structure. Alternatively, the edges of the bottom surfaces of adjacent microlenses are connected. Optionally, the area of the ohmic contact layer of the first doping type is smaller than the area of the light emitting surface of the light emitting mesa. Optionally, the substrate further comprises a passivation layer at least on the side wall of the light emitting mesa and the light emitting surface, and the first doping type ohmic contact layer is exposed. Optionally, the light transmittance of the material of the passivation layer is greater than a first preset light transmittance threshold. Optionally, the first preset light transmittance threshold is greater than or equal to 85%. Optionally, the substrate further comprises a first doping type indium tin oxide layer, wherein the first doping type indium tin oxide layer covers the passivation layer and the first doping type ohmic contact layer, the dielectric layer is positioned on the first doping type indium tin oxide layer, and the distance between the top surface of the first doping type indium tin oxide layer and the bottom surface of the micro lens meets the following formula: Where H represents a distance between a top surface of the first doping type indium tin oxide layer and a bottom surface of the microlens, n lens represents a refractive index of the microlens, and ρ represents a curvature of a curved surface of the microlens. Optionally, the material of the dielectric layer is selected from one or more of the following combinations of SiO 2、SiNx, gaP, PMMA, PDMS, and/or the material of the microlens is selected from one or more of the following combinations of SiO 2、SiNx, gaP, PMMA, PDMS. Optionally, the light-emitting table top