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CN-121985659-A - Transfer substrate of light emitting device, transfer method and display panel

CN121985659ACN 121985659 ACN121985659 ACN 121985659ACN-121985659-A

Abstract

The disclosure provides a transfer substrate of a light emitting device, a transfer method and a display panel, and belongs to the technical field of photoelectron manufacturing. The transfer substrate comprises a substrate and a limiting structure, wherein the limiting structure is positioned on the substrate, and a gap for accommodating a pixel chip is formed in one side, away from the substrate, of the limiting structure. The transfer substrate can solve the problem of unstable landing points of the pixel chip in the laser transfer process, and improves the transfer precision of the pixel chip.

Inventors

  • GAO WENLONG
  • YAN FAN
  • SONG YABING
  • TANG MIAO
  • ZHANG WEI

Assignees

  • 京东方华灿光电(广东)有限公司

Dates

Publication Date
20260505
Application Date
20251210

Claims (10)

  1. 1. The transfer substrate of the light-emitting device is characterized by comprising a substrate (11) and a limiting structure (20), wherein the limiting structure (20) is positioned on the substrate (11), and a gap (200) for accommodating a pixel chip (50) is formed on one side of the limiting structure (20) away from the substrate (11).
  2. 2. The transfer substrate according to claim 1, wherein the spacing structure (20) comprises a spacing layer (21), the surface of the spacing layer (21) remote from the substrate (11) having a plurality of spacing holes (210) arranged at intervals, or The limiting structure (20) comprises a plurality of limiting plates (22), wherein the limiting plates (22) are arranged at intervals along the same straight line, and the gap between the adjacent limiting plates (22) is the gap (200), or The limiting structure (20) comprises a plurality of limiting blocks (23), the limiting blocks (23) are arranged in an array, and gaps between adjacent limiting blocks (23) are gaps (200).
  3. 3. Transfer substrate according to claim 2, characterized in that the cross-sectional shape of the limiting aperture (210) in a direction perpendicular to the substrate (11) comprises a polygon.
  4. 4. A transfer substrate according to any one of claims 1 to 3, wherein the depth of the void (200) is less than or equal to the thickness of a pixel chip (50) for being accommodated within the void (200).
  5. 5. A transfer substrate according to any one of claims 1 to 3, characterized in that it further comprises a layer of receiving glue (30), said layer of receiving glue (30) being located between the limit structure (20) and the substrate (11).
  6. 6. Transfer substrate according to claim 5, characterized in that the thickness of the receiving glue layer (30) is less than or equal to 100 μm.
  7. 7. A transfer method of a light emitting device, the transfer method comprising: preparing a transfer substrate, wherein the transfer substrate comprises a substrate (11) and a limit structure (20), the limit structure (20) is positioned on the substrate (11), and a gap (200) for accommodating a pixel chip (50) is formed on one side of the limit structure (20) away from the substrate (11); placing a wafer (40) above the transfer substrate such that a pixel chip (50) of the wafer (40) is opposite to a void (200) of the spacing structure (20); And irradiating the wafer (40) by adopting laser, so that the pixel chips (50) of the wafer (40) fall into the gaps (200) of the limiting structures (20).
  8. 8. The transfer method of claim 7, wherein preparing the transfer substrate comprises: and forming a limiting layer (21) on one side of the substrate (11), and etching the surface, far away from the substrate (11), of the limiting layer (21) to form a plurality of limiting holes (210) which are distributed at intervals.
  9. 9. The transfer method according to claim 8, wherein forming a stopper layer (21) on one side of the substrate (11) further comprises: Forming a receiving glue layer (30) on the substrate (11), wherein the thickness of the receiving glue layer (30) is less than or equal to 100 mu m; The limiting layer (21) is formed on the receiving adhesive layer (30).
  10. 10. A display panel comprising a transfer substrate according to any of claims 1 to 6 and a plurality of pixel chips (50), a plurality of the pixel chips (50) being located within the void (200).

Description

Transfer substrate of light emitting device, transfer method and display panel Technical Field The present disclosure relates to the field of optoelectronic manufacturing technologies, and in particular, to a transfer substrate, a transfer method, and a display panel of a light emitting device. Background In the new display field, mini/Micro LEDs are prominent in brightness and lifetime. The MIP (Micro LED IN PACKAGE, micro LED package) is a technology for integrally packaging the Micro LED chip to improve display performance and reduce manufacturing cost. In the related art, the light emitting device of MIP includes a plurality of pixel chips and a receiving substrate. The pixel chips are required to be transferred to the receiving substrate by a mass transfer technology, so that the pixel chips are arranged on the receiving substrate at intervals. However, in the process of transferring huge amount, after the epitaxial material of the pixel chip is decomposed by laser, the pixel chip falls freely without restriction, so that the falling point of each pixel chip is extremely unstable, and the transferring precision of the pixel chip is affected. Disclosure of Invention The embodiment of the disclosure provides a transfer substrate, a transfer method and a display panel of a light-emitting device, which can improve the problem of unstable landing points of pixel chips in the laser transfer process and improve the transfer precision of the pixel chips. The technical scheme is as follows: in one aspect, the embodiment of the disclosure provides a transfer substrate of a light emitting device, which comprises a substrate and a limiting structure, wherein the limiting structure is positioned on the substrate, and a gap for accommodating a pixel chip is formed on one side of the limiting structure away from the substrate. In another implementation manner of the embodiment of the disclosure, the limiting structure comprises a limiting layer, wherein a plurality of limiting holes which are arranged at intervals are formed in the surface, far away from the substrate, of the limiting layer, or the limiting structure comprises a plurality of limiting plates which are arranged at intervals along the same straight line, gaps between adjacent limiting plates are gaps, or the limiting structure comprises a plurality of limiting blocks which are arranged in an array, and the gaps between the adjacent limiting blocks are the gaps. In another implementation of the embodiment of the disclosure, the cross-sectional shape of the limiting hole in a direction perpendicular to the substrate includes a polygon. In another implementation of an embodiment of the present disclosure, the depth of the void is less than or equal to the thickness of the pixel chip for being received within the void. In another implementation of the disclosed embodiments, the transfer substrate further includes a receiving glue layer located between the spacing structure and the substrate. In another implementation of the embodiments of the present disclosure, the thickness of the receiving glue layer is less than or equal to 100 μm. On the other hand, the embodiment of the disclosure provides a transfer method of a light emitting device, which comprises the steps of preparing a transfer substrate, wherein the transfer substrate comprises a substrate and a limiting structure, the limiting structure is positioned on the substrate, a gap for accommodating a pixel chip is formed in one side, away from the substrate, of the limiting structure, a wafer is placed above the transfer substrate, the pixel chip of the wafer is opposite to the gap of the limiting structure, and the wafer is irradiated by laser, so that the pixel chip of the wafer falls into the gap of the limiting structure. In another implementation of the disclosed embodiments, preparing a transfer substrate includes forming a spacing layer on one side of the substrate, etching a surface of the spacing layer away from the substrate to form a plurality of spacing holes arranged at intervals. In another implementation manner of the embodiment of the disclosure, forming the limiting layer on one side of the substrate further comprises forming a receiving glue layer on the substrate, wherein the thickness of the receiving glue layer is smaller than or equal to 100 μm, and forming the limiting layer on the receiving glue layer. In yet another aspect, the disclosed embodiments provide a display panel comprising a transfer substrate as described above and a plurality of pixel chips, a plurality of the pixel chips being located within the void. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that at least: According to the transfer substrate of the light-emitting device, the limiting structure is arranged on the transfer substrate, and the side, far away from the substrate, of the limiting structure is provided with the gaps, and the sizes of the gaps are match