CN-121985672-A - Perovskite/crystalline silicon laminated solar cell with novel composite layer and preparation method

CN121985672ACN 121985672 ACN121985672 ACN 121985672ACN-121985672-A

Abstract

The invention discloses a perovskite/crystalline silicon laminated solar cell with a novel composite layer and a preparation method thereof, wherein the perovskite/crystalline silicon laminated solar cell comprises a perovskite top cell, a composite layer and a crystalline silicon bottom cell which are sequentially laminated, the composite layer consists of an active metal layer and an active metal oxide layer, the active metal layer is in contact with the crystalline silicon bottom cell, the active metal oxide layer is in contact with the perovskite top cell, the active metal is at least one of chromium, titanium, niobium and tantalum, and the thickness of the composite layer is less than 10nm. The invention adopts a novel intermediate composite layer which consists of a specific active metal layer and an active metal oxide layer, reduces interface contact potential barrier and voltage loss by optimizing energy band matching at the electrical level, improves open-circuit voltage, obviously reduces optical parasitic absorption by utilizing ultrathin characteristic at the optical level, and improves photocurrent, thereby systematically improving the photoelectric conversion efficiency of the battery.

Inventors

YE JICHUN
LI HUAN
YING ZHIQIN
YANG XI
LI XIN
ZHENG LUYAO
ZHANG MEILI

Assignees

中国科学院宁波材料技术与工程研究所

Dates

Publication Date: 20260505
Application Date: 20251218

Claims (10)

1. The perovskite/crystalline silicon laminated solar cell with the novel composite layer is characterized by comprising a perovskite top cell, a composite layer and a crystalline silicon bottom cell which are laminated in sequence, wherein the composite layer consists of an active metal layer and an active metal oxide layer, the active metal layer is in contact with the crystalline silicon bottom cell, the active metal oxide layer is in contact with the perovskite top cell, the active metal is at least one selected from chromium, titanium, niobium and tantalum, and the thickness of the composite layer is less than 10nm.
2. The perovskite/crystalline silicon tandem solar cell according to claim 1, wherein the thickness of the active metal layer is 3-9nm and the thickness of the active metal oxide layer is 0.5-2nm.
3. The perovskite/crystalline silicon tandem solar cell according to claim 2, wherein the transmittance of the composite layer is higher than 80% in the wavelength range of 800-1200 nm.
4. The perovskite/crystalline silicon stacked solar cell of claim 2 wherein the lateral resistivity of the composite layer is not less than 1 x 10 3 Ω -cm.
5. The perovskite/crystalline silicon tandem solar cell according to any one of claims 1 to 4, wherein the perovskite top cell comprises a hole transport layer, a perovskite light absorption layer, an electron transport layer, a buffer layer and a transparent conductive oxide layer which are sequentially stacked on the active metal oxide layer, the hole transport layer being composed of a nickel oxide layer and a self-assembled monolayer which are sequentially stacked on the active metal oxide layer.
6. The perovskite/crystalline silicon stack solar cell of claim 5 wherein the crystalline silicon bottom cell is a tunnel oxide passivation contact crystalline silicon cell.
7. A method for manufacturing a perovskite/crystalline silicon tandem solar cell having a novel composite layer as claimed in any one of claims 1 to 6, comprising the steps of: s1, providing a crystalline silicon bottom battery; s2, depositing an active metal layer on the crystalline silicon bottom cell by adopting a thermal evaporation or electron beam evaporation technology; S3, forming an active metal oxide layer on the surface of the active metal layer through controllable oxidation to obtain a composite layer; s4, preparing the perovskite top battery on the composite layer.
8. The method of claim 7, wherein in step S2, the active metal layer is deposited under process conditions such that the evaporation rate is 0.1-0.5A/S and the vacuum level is less than 5.0X10 -4 Pa.
9. The method according to claim 7, wherein the controlled oxidation is performed in step S3 by one of exposing the substrate to a controlled oxygen-containing atmosphere for a predetermined time, performing thermal oxidation in the oxygen-containing atmosphere, performing plasma oxidation in a plasma atmosphere of oxygen or an oxygen-inert gas mixture, and performing ozone oxidation in an ozone atmosphere.
10. The preparation method of the light-emitting diode according to claim 7, wherein the step S4 specifically comprises the steps of depositing a nickel oxide layer on the composite layer by using a magnetron sputtering technology, spin-coating a self-assembled monolayer solution on the nickel oxide layer to obtain a hole transport layer, and sequentially depositing a perovskite light-absorbing layer, an electron transport layer, a buffer layer and a top transparent conductive oxide layer on the hole transport layer.

Description

Perovskite/crystalline silicon laminated solar cell with novel composite layer and preparation method Technical Field The invention relates to the technical field of solar cells, in particular to a perovskite/crystalline silicon laminated solar cell with a novel composite layer and a preparation method thereof. Background The perovskite/crystalline silicon laminated solar cell is hopeful to break through the Shokrill-quinine limit of a single-junction cell by combining the high light absorption coefficient and band gap adjustable characteristic of the perovskite material with the mature process stability of the crystalline silicon cell, and becomes an important direction of the next-generation high-efficiency photovoltaic technology. The intermediate composite layer is used as a key structure for connecting the perovskite top cell and the crystalline silicon bottom cell, and is required to realize high-efficiency recombination of carriers, high transmittance of photons and ohmic contact of an interface, and the performance of the intermediate composite layer directly determines the open-circuit voltage, the filling factor and the overall efficiency of the laminated cell. Currently, the composite layer technology mainly relies on transparent conductive oxide (such as ITO and IZO) and doped polysilicon. The TCO material is used as a composite layer, although the TCO material has higher conductivity and light transmittance, multiple challenges are faced, namely, firstly, the TCO material is not matched with the refractive index of a silicon cell, light reflection loss exists in a near infrared band above 800nm, long-wave light absorption of a bottom cell is limited, secondly, the TCO layer is too high in transverse conductivity, the transverse shunt effect of a top cell is easy to be aggravated, the preparation of an efficient large-area cell is not facilitated, thirdly, the TCO material represented by ITO depends on rare metals, resources are scarce and the cost is high, the large-scale industrialization of the laminated cell is seriously restricted, and fourthly, if the TCO is used as the composite layer, reverse p/n junction is possibly introduced due to the mismatching of interface energy levels in the laminated structure of the TOPCon (tunneling oxide passivation contact) crystal silicon bottom cell, and the carrier transportation is adversely affected. On the other hand, a doped polysilicon composite layer is another common scheme, which forms a tunneling junction through heavily doped p + and n + layers, and can theoretically solve the problem of reverse p/n junction and realize low-loss carrier tunneling recombination. However, the technology has complex path process and great process challenge. For example, boron (B) and phosphorus (P) dopants are very susceptible to interdiffusion at high temperatures, which not only damages abrupt junction regions, which is detrimental to forming high quality ohmic contacts, but may also lead to increased interface defects. To solve this problem, it is generally necessary to develop a complex two-step high temperature annealing process, which not only increases the manufacturing cost and the uncertainty of the process significantly, but also makes the high temperature process (up to 880 ℃) completely incompatible with the process of low temperature sensitive bottom batteries such as perovskite materials and Heterojunction (HJT), and the application range thereof is greatly limited. Therefore, developing a novel composite layer structure which has high electrical performance, excellent optical characteristics and excellent interface passivation effect, is compatible with a low-temperature process and has controllable cost has become a core problem for promoting the industrialization of perovskite/crystalline silicon laminated solar cells. Disclosure of Invention Aiming at the defects of the prior art, the invention aims to solve the technical problems of efficiency loss caused by large optical parasitic absorption, interface energy level mismatch and process damage of an intermediate composite layer of a perovskite/crystalline silicon laminated solar cell. In order to achieve the above object, according to a first aspect of the present invention, there is provided a perovskite/crystalline silicon stacked solar cell having a novel composite layer, comprising a perovskite top cell, a composite layer and a crystalline silicon bottom cell, which are stacked in this order, wherein the composite layer is composed of an active metal layer and an active metal oxide layer, the active metal layer is in contact with the crystalline silicon bottom cell, the active metal oxide layer is in contact with the perovskite top cell, the active metal is at least one selected from chromium, titanium, niobium, and tantalum, and the thickness of the composite layer is less than 10nm. The perovskite/crystalline silicon laminated solar cell adopts a novel intermediate composite layer, consist