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CN-121985674-A - Laminated battery and preparation method thereof

CN121985674ACN 121985674 ACN121985674 ACN 121985674ACN-121985674-A

Abstract

The invention provides a laminated battery and a preparation method thereof. The laminate cell includes at least one perovskite subcell including a perovskite absorber layer and a passivation layer disposed on the perovskite absorber layer, the passivation layer containing a compound of formula a below. According to the invention, the compound shown in the formula A is used as a passivation material to be introduced into the passivation layer of the laminated battery, so that the energy band matching between the perovskite film and other functional layers such as a buffer layer can be regulated and controlled, and the performance of the device is optimized. Wherein R1 and R2 are respectively and independently selected from O, NH, CH 2 or S, wherein X is halogen, and n is 0, 1 or 2.

Inventors

  • WANG DIANXI
  • SHI YU
  • LUO WENJIE
  • HE RUI
  • ZHANG XUELING
  • XU CHENXIN

Assignees

  • 天合光能股份有限公司

Dates

Publication Date
20260505
Application Date
20260210

Claims (17)

  1. 1. A laminated cell comprising at least one perovskite subcell comprising a perovskite absorber layer and a passivation layer disposed on the perovskite absorber layer, the passivation layer comprising a compound of formula a: ; Wherein R1 and R2 are respectively and independently selected from O, NH, CH 2 or S; Wherein X is halogen, and n is 0,1 or 2.
  2. 2. The laminate battery of claim 1, wherein: In the formula A, R1 and R2 are the same or different; In the formula A, X is selected from one or more of Cl, br and I; in formula A, the number of X is 1 to 8, preferably 2 to 6.
  3. 3. The laminate battery of claim 1, wherein the compound of formula a has the structure of formula a-1: ; wherein X is Cl and/or Br, n is 0,1 or 2, and the number of X is 1-8.
  4. 4. The laminate battery of claim 3, wherein the compound of formula a has a structure represented by formula a-2: ; Wherein X is selected from Cl and/or Br.
  5. 5. The laminate cell of claim 1, wherein the passivation layer further comprises an organic ammonium salt, and wherein the mass ratio of the compound of formula A to the organic ammonium salt is 1 (1-50).
  6. 6. The laminate cell of claim 5, wherein the organic ammonium salt is selected from the group consisting of an organoammonium iodidate salt and/or an organoammonium hydrochloride salt.
  7. 7. The laminate cell of claim 6, wherein the organic ammonium salt is selected from one or more of propylenediamine iodine, phenylethylamine iodide, 4-trifluoromethyl-anilide hydrochloride, 2-thiophenoethylamine hydrochloride, ethylamine hydrochloride, and n-butylamine hydrochloride.
  8. 8. The laminate cell of claim 1, wherein the perovskite subcell comprises a hole transport layer, a perovskite absorption layer, the passivation layer, an electron transport layer, a buffer layer, a transparent electrode, and a metal electrode disposed in that order.
  9. 9. The laminate cell of claim 1, wherein the laminate cell is a laminate perovskite-crystalline silicon cell.
  10. 10. The laminated cell of claim 9, wherein the laminated cell comprises a crystalline silicon bottom cell and a perovskite subcell comprising a hole transport layer, a perovskite absorption layer, the passivation layer, an electron transport layer, a buffer layer, a transparent electrode, and a metal electrode disposed in that order, wherein the hole transport layer is disposed on a side proximate to the crystalline silicon bottom cell.
  11. 11. A method of producing a laminated cell according to claim 1, comprising depositing a passivation material containing a compound of formula A on the surface of the perovskite absorption layer of the perovskite subcell, and annealing to obtain the passivation layer.
  12. 12. The method according to claim 11, wherein the deposition is by evaporation and/or The annealing condition is that annealing is carried out under inert atmosphere, and the annealing temperature is 80-120 ℃.
  13. 13. The method of claim 11, comprising depositing a passivation material comprising a compound of formula A and an organic ammonium salt on the surface of the perovskite absorber layer using a co-evaporation process and annealing to obtain the passivation layer.
  14. 14. The method of claim 11, further comprising the steps of providing a crystalline silicon bottom cell, sequentially disposing a hole transport layer, a perovskite light absorbing layer on a surface of the crystalline silicon bottom cell, and sequentially disposing an electron transport layer, a transparent electrode, and a metal on a surface of the passivation layer after the passivation layer is prepared.
  15. 15. Use of a compound of formula a according to claim 1 for the preparation of a laminated cell with improved photoelectric properties.
  16. 16. The use according to claim 15, wherein the compound of formula a and the organic ammonium salt are used in the preparation of a laminate cell having improved photoelectric properties.
  17. 17. The use according to claim 15, wherein the compound of formula a and optionally the organic ammonium salt are used in the preparation of a passivation layer or in the preparation of a perovskite thin film comprising the passivation layer.

Description

Laminated battery and preparation method thereof Technical Field The invention belongs to the field of solar cells, and particularly relates to a laminated cell and a preparation method thereof. Background The theoretical efficiency limit (S-Q limit) of the traditional single crystal silicon solar cell is about 33.7%, the commercial crystal silicon solar cell efficiency reaches 24% -26%, and great challenges are faced to further improving the efficiency. Therefore, the laminated cell (Tandem Solar Cell) becomes a key technology to break this bottleneck. The Perovskite-crystal silicon (Perovskite/c-Si) laminated battery combines the characteristics of wide forbidden band, high absorption coefficient and the like of Perovskite (Perovskite) materials, and the mature industrial advantage of the crystal silicon battery, and can remarkably improve the light absorption and carrier collection efficiency. However, in the stacked structure, interfacial recombination and surface defects become one of the main factors restricting the performance of the battery. In crystalline silicon and perovskite materials, surface defects can create non-radiative recombination centers, reduce carrier lifetime, and cause loss of open circuit voltage (Voc). In addition, in a humid environment, surface defects can become ion migration channels, so that material decomposition and device performance degradation are accelerated. Therefore, surface passivation (Surface Passivation) is a key technology to improve battery performance. However, passivation of perovskite-crystalline silicon stacked cells is more complex than single junction cells in that the lattice mismatch of the two materials results in a high defect state density at the interface and different process windows (e.g., temperature) present a higher challenge for heterojunction passivation. Disclosure of Invention In order to overcome the problems in the prior art, the invention provides a laminated battery and a preparation method thereof. According to the invention, the compound shown in the formula A is used as a passivation material to be introduced into the passivation layer of the laminated battery, so that the energy band matching between the perovskite film and other functional layers such as a buffer layer can be regulated and controlled, and the device performance, particularly the photoelectric performance, can be optimized. Specifically, a first aspect of the present invention provides a laminated cell comprising at least one perovskite subcell comprising a perovskite absorbing layer and a passivation layer disposed on the perovskite absorbing layer, the passivation layer containing a compound of formula a: ; Wherein R1 and R2 are respectively and independently selected from O, NH, CH 2 or S; Wherein X is halogen, and n is 0,1 or 2. In one or more embodiments, R1 and R2 are the same or different. In one or more embodiments, X is selected from one or more of Cl, br, and I. In one or more embodiments, in formula a, the number of X is 1 to 8, preferably 2 to 6. In one or more embodiments, the compound of formula a has the structure of formula a-1: ; wherein X is Cl and/or Br, n is 0,1 or 2, and the number of X is 1-8. In one or more embodiments, the compound of formula a has a structure represented by formula a-2: ; Wherein X is selected from Cl and/or Br. In one or more embodiments, the passivation layer further comprises an organic ammonium salt, wherein the mass ratio of the compound of formula A to the organic ammonium salt is 1 (1-50). In one or more embodiments, the organic ammonium salt is selected from an organic ammonium iodinated salt and/or an organic ammonium hydrochloride salt. In one or more embodiments, the organic ammonium salt is selected from one or more of propylenediamine iodine, phenylethylamine iodide, 4-trifluoromethyl-anilide hydrochloride, 2-thiophenoethylamine hydrochloride, ethylamine hydrochloride, and n-butylamine hydrochloride. In one or more embodiments, the perovskite subcell includes a hole transport layer, a perovskite absorption layer, the passivation layer, an electron transport layer, a buffer layer, a transparent electrode, and a metal electrode disposed in that order. In one or more embodiments, the stacked cell is a stacked perovskite-crystalline silicon cell. In one or more embodiments, the laminated cell comprises a crystalline silicon bottom cell and a perovskite subcell, wherein the perovskite subcell comprises a hole transport layer, a perovskite absorption layer, the passivation layer, an electron transport layer, a buffer layer, a transparent electrode and a metal electrode which are sequentially arranged, and the hole transport layer is arranged on one side close to the crystalline silicon bottom cell. In a second aspect, the invention provides a method of manufacturing a laminated cell as described in any of the embodiments herein, the method comprising depositing a passivation material comprising a compound of formula