CN-121985677-A - White light nanosheet light-emitting diode

Abstract

The invention discloses a white light nano-sheet light-emitting diode. The light emitting diode includes a substrate, a first electrode, a first carrier injection layer, a first carrier transport layer, a light emitting layer, a second carrier transport layer, a second carrier injection layer, and a second electrode. The light-emitting layer comprises a nanosheet CQW and a blue light nanocrystalline material, wherein the nanosheet CQW is CdSe/CdZnS, at least one of the first carrier transmission layer and the second carrier transmission layer is an organic material layer, the blue light nanocrystalline material generates blue light with the wavelength smaller than 500nm, the forbidden band width of the organic material is larger than 2.48eV and generates blue light with the wavelength smaller than 500nm, and the nanosheet CQW and the organic material generate excitation compound light. The light-emitting diode has the advantages of high luminous efficiency and good color rendering property.

Inventors

• LIU BAIQUAN
• YANG SIJIA
• LIN RUI
• LUO DONGXIANG
• LIAO SHAOLIN
• FANG XIYUAN

Assignees

• 中山大学

Dates

Publication Date

20260505

Application Date

20251229

Claims (10)

1. 1. A white light nanoplatelet light emitting diode, comprising: A substrate; A first electrode disposed on the substrate; A first carrier injection layer disposed on the first electrode; a first carrier transport layer disposed on the first carrier injection layer; A light emitting layer disposed on the first carrier transport layer; a second carrier transport layer disposed on the light emitting layer; a second carrier injection layer disposed on the second carrier transport layer, and A second electrode disposed on the second carrier injection layer; The light-emitting layer comprises a nanosheet CQW and a blue light nanocrystalline material, wherein the nanosheet CQW is CdSe/CdZnS, at least one of the first carrier transmission layer and the second carrier transmission layer is an organic material layer, the blue light nanocrystalline material generates blue light with the wavelength smaller than 500 nm, the forbidden band width of the organic material is larger than 2.48eV and generates blue light with the wavelength smaller than 500 nm, the nanosheet CQW and the organic material generate excitation compound to emit light, and light with the wavelength of 501-700nm is generated.
2. 2. The white light nanoplatelet light emitting diode of claim 1, wherein the blue light nanocrystalline material comprises one of quantum dots or nanowires.
3. 3. The white light nanoplatelet light emitting diode of claim 2, wherein the quantum dots are ZnSe/ZnS or CdSe/ZnS.
4. 4. A white light nanoplatelet light emitting diode according to claim 3 wherein the organic material is PF8Cz or TFB.
5. 5. The white light nanosheet light-emitting diode of claim 1, wherein the specific structure is ITO/PEDOT PSS/TFB/qd+cqw/ZnMgO/Al, wherein ZnMgO is both an electron injection layer and an electron transport layer.
6. 6. The white light nanosheet light-emitting diode of claim 5, wherein the ZnMgO has a thickness of 30-50 nm.
7. 7. The white light nanosheet light-emitting diode of claim 1, wherein the specific structure is ITO/MoO 3 /TFB/qd+cqw/ZnO/Ag, wherein ZnO is both an electron injection layer and an electron transport layer.
8. 8. The method for manufacturing a white light nanosheet light emitting diode as claimed in any one of claims 1 to 7, comprising the steps of: Providing a substrate; fabricating a first electrode on the substrate; manufacturing a first carrier injection layer on the first electrode; Manufacturing a first carrier transmission layer on the first carrier injection layer; manufacturing a light-emitting layer on the first carrier transport layer; Manufacturing a second carrier transport layer on the light-emitting layer; manufacturing a second carrier injection layer on the second carrier transmission layer; And manufacturing a second electrode on the second carrier injection layer.
9. 9. The method of manufacturing a white light nanoplatelet light emitting diode of claim 8, wherein the light emitting layer is manufactured as follows: Dissolving a quantum dot luminescent material in an n-octane solution to obtain an n-octane solution of the quantum dot luminescent material; Adding the nanosheet luminescent material into an n-octane solution with the quantum dot luminescent material to obtain a luminescent layer solution; and coating the light-emitting layer solution on the surface of the first carrier transport layer to form the light-emitting layer.
10. 10. The method for preparing a white light nanosheet light-emitting diode according to claim 9, wherein in the luminescent layer solution, the mass ratio of the quantum dot luminescent material to the nanosheet luminescent material is 1:1-40:1.

Description

White light nanosheet light-emitting diode Technical Field The invention relates to the field of light-emitting diodes, in particular to a white light nano-sheet light-emitting diode and a manufacturing method thereof. Background With the global increasing demands for energy efficiency and environmental sustainability, lighting and display technologies are undergoing a revolutionary transition to Light Emitting Diode (LED) technology. In this context, white light LED (WLED) based on nanocrystals is used as a leading edge technology in the field of display, solid state lighting, and efficient and stable white light emission is achieved by utilizing unique optoelectronic characteristics of nanocrystals, such as QDs (Quantum Dot) and CQW (Colloidal Quantum Well, colloidal Quantum wells). Nanocrystalline white light LEDs have received great attention due to their excellent color properties, potential for low cost fabrication, solution processibility, and the like. With the continued advancement and optimization of technology, nanocrystalline white LEDs will play an increasingly important role in future photovoltaic applications and lighting system markets. The two-dimensional quantum confinement effect of the semiconductor nanoplatelet Colloid Quantum Well (CQW) makes it exhibit high exciton binding energy in the thickness direction, thereby improving the stability of excitons and remarkably suppressing the auger recombination effect. This property makes CQW an ideal material for the field of luminescence. In addition, by controlling the thickness of the CQW, accurate light emission from blue light to deep red light can be achieved. This tunability lays a technological foundation for the application of CQW in LED display and solid state lighting. However, the use of CQW materials to fabricate white LED technology still presents challenges, such as low blue efficiency. These problems may lead to a decrease in overall luminous efficiency, especially in cases where energy transfer efficiency is not ideal or non-radiative recombination occurs. Furthermore, in some application scenarios, white LEDs are required to more realistically restore the color of an object in lighting applications. For example, in scenes where color rendering is extremely demanding, such as museum lighting, medical lighting, etc., if lighting effects closer to natural light can be provided, it would be helpful to protect exhibits and improve the accuracy of medical diagnosis. Disclosure of Invention In order to overcome the above-mentioned disadvantages and shortcomings of the prior art, the present invention is directed to a white light nanosheet light emitting diode, so as to solve the problems of low light emitting efficiency and poor color rendering of the conventional white light nanosheet LED. The aim of the invention is achieved by the following technical scheme: the invention provides a white light nanosheet light-emitting diode, which comprises: A substrate; A first electrode disposed on the substrate; A first carrier injection layer disposed on the first electrode; a first carrier transport layer disposed on the first carrier injection layer; A light emitting layer disposed on the first carrier transport layer; a second carrier transport layer disposed on the light emitting layer; a second carrier injection layer disposed on the second carrier transport layer, and A second electrode disposed on the second carrier injection layer; The light-emitting layer comprises a nanosheet CQW and a blue light nanocrystalline material, wherein the nanosheet CQW is CdSe/CdZnS, at least one of the first carrier transmission layer and the second carrier transmission layer is an organic material layer, the blue light nanocrystalline material generates blue light with the wavelength smaller than 500 nm, the forbidden band width of the organic material is larger than 2.48eV and generates blue light with the wavelength smaller than 500 nm, the nanosheet CQW and the organic material generate excitation compound to emit light, and light with the wavelength of 501-700nm is generated. In some embodiments of the invention, the blue light nanocrystalline material comprises one of quantum dots or nanowires. In some embodiments of the invention, the quantum dots are ZnSe/ZnS or CdSe/ZnS. In some embodiments of the invention, the organic material is PF8Cz or TFB. In some embodiments of the present invention, the specific structure of the white light nanosheet light emitting diode is ITO/PEDOT PSS/TFB/QD+CQW/ZnMgO/Al, wherein ZnMgO is both an electron injection layer and an electron transport layer. In some embodiments of the present invention, the ZnMgO has a thickness of 30 to 50nm. In some embodiments of the present invention, the specific structure of the white light nanosheet light emitting diode is ITO/MoO 3/TFB/qd+cqw/ZnO/Ag, where ZnO is both an electron injection layer and an electron transport layer. The invention also provides a preparation method of t