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CN-121985678-A - Nanosheet electrolyte luminescence transistor

CN121985678ACN 121985678 ACN121985678 ACN 121985678ACN-121985678-A

Abstract

The invention discloses a nano-sheet electrolyte light-emitting transistor which comprises an insulating layer, a gate electrode, an n-type semiconductor layer, a source electrode, a nano-sheet electrolyte light-emitting layer, a hole transport layer, a hole injection layer and a drain electrode, wherein the gate electrode is arranged on one surface of the insulating layer, the n-type semiconductor layer is arranged on the other surface of the insulating layer opposite to the gate electrode, the source electrode is arranged on part of the surface of the n-type semiconductor, the nano-sheet electrolyte light-emitting layer is arranged on the other part of the surface of the n-type semiconductor, the nano-sheet electrolyte light-emitting layer comprises a heterostructure nano-sheet and electrolyte, the hole transport layer is arranged on the nano-sheet electrolyte light-emitting layer, the hole injection layer is arranged on the hole transport layer, and the drain electrode is arranged on the hole injection layer. In the invention, the nano-sheet electrolyte luminescent layer can form an electric double layer at the electrode interface through anions and cations under the action of an electric field, thereby improving the injection and transmission of charges.

Inventors

  • LIU BAIQUAN
  • REN YUNFEI
  • LIU CHUAN

Assignees

  • 中山大学

Dates

Publication Date
20260505
Application Date
20251229

Claims (10)

  1. 1. A nanoplatelet electrolyte light emitting transistor comprising: an insulating layer; A gate electrode disposed on one of surfaces of the insulating layer; An n-type semiconductor layer provided on the other surface of the insulating layer opposite to the gate electrode; A source electrode disposed on a part of the surface of the n-type semiconductor; The nano-sheet electrolyte luminous layer is arranged on the surface of the other part of the n-type semiconductor and comprises a heterostructure nano-sheet and electrolyte, wherein the heterojunction nano-sheet is a two-dimensional composite structure formed by coupling two or more different semiconductor materials through interfaces; a hole transport layer disposed on the nanoplatelet electrolyte light emitting layer; a hole injection layer disposed on the hole transport layer; and a drain electrode disposed on the hole injection layer.
  2. 2. The nano-sheet electrolyte luminescence transistor according to claim 1, wherein the nano-sheet electrolyte luminescence layer is formed by coating a nano-sheet electrolyte solution, and the nano-sheet electrolyte solution is obtained by dissolving (CdSe/CdS) @ (CdS/CdZnS) nano-sheet stock solution and electrolyte.
  3. 3. The nanoplatelet electrolyte light emitting transistor of claim 1, wherein the electrolyte is any one of THA-BF 4 、Li-TFSI、[CH 3 (CH 2 ) 3 ] 4 NCl、[CH 3 (CH 2 ) 3 ] 4 NBr、C 14 H 32 BrP（ tributylethyl phosphine bromide).
  4. 4. The preparation method of the nano-sheet electrolyte light-emitting transistor is characterized by comprising the following steps of: Providing a substrate, wherein the substrate comprises a gate electrode and an insulating layer; preparing an n-type semiconductor on the substrate, wherein the n-type semiconductor covers the surface of the insulating layer; Preparing a source electrode on a part of the surface of the n-type semiconductor; The method comprises the steps of spin coating a nano-sheet electrolyte solution on the surface of the other part of the n-type semiconductor to obtain a nano-sheet electrolyte luminous layer, wherein the nano-sheet electrolyte solution is obtained by mutually dissolving a heterostructure nano-sheet solution and electrolyte; Preparing a hole transport layer on the nanoplatelet electrolyte light emitting layer; preparing a hole injection layer on the hole transport layer; and preparing a drain electrode on the hole injection layer.
  5. 5. The method of manufacturing a nanoplatelet electrolyte light emitting transistor according to claim 4, wherein the heterojunction nanoplatelet is a (CdSe/CdS) @ (CdS/CdZnS) heterostructure nanoplatelet prepared by: on the basis of a CdSe bare core, firstly, passivating with a CdS crown outside; Depositing single-layer CdS on the top and the bottom of the nano-sheet respectively to be used as seeds for the growth of a final heat injection method; the CdZnS shell was grown vertically at high temperature.
  6. 6. The method for preparing a nanoplatelet electrolyte light emitting transistor according to claim 4, wherein the preparation process of the nanoplatelet electrolyte solution comprises the steps of: cleaning the nano sheet stock solution to obtain a nano sheet solution, wherein the nano sheet stock solution comprises n-hexane and nano sheets dispersed in the n-hexane; the nanoplatelet solution is added to an electrolyte solution and stirred to obtain the nanoplatelet electrolyte solution.
  7. 7. The method for preparing a nanoplatelet electrolyte light emitting transistor according to claim 6, wherein the preparation of the nanoplatelet stock solution is: Mixing the (CdSe/CdS) @ (CdS) nanosheets covered with the oleylamine and the 1-octadecene, oleic acid, zinc acetate and cadmium acetate to form a mixed solution; Degassing the mixed solution; adding oleylamine into the deaerated mixed solution; heating the mixed solution; after the temperature of the mixed solution reaches a first preset temperature, adding zinc mercaptan-1-octadecene anion precursor into the mixed solution at a first injection speed; After the temperature of the mixed solution reaches a second preset temperature, adding zinc mercaptan-1-octadecene anion precursor into the mixed solution at a second injection speed; When the mixed solution reaches the reaction temperature, keeping the mixed solution at the reaction temperature for a preset reaction time, and then carrying out water bath quenching; diluting the quenched mixed solution with n-hexane, and then putting the diluted mixed solution into a centrifugal machine for centrifugal treatment to precipitate unstable particles; Mixing the supernatant in the mixed solution with ethanol, and then putting the mixture into a centrifugal machine again for centrifugal treatment to obtain precipitated (CdSe/CdS) @ (CdS/CdZnS) heterostructure nanosheets; And dispersing the precipitated (CdSe/CdS) @ (CdS/CdZnS) heterostructure nanosheets in n-hexane to obtain a nanosheet stock solution.
  8. 8. The method for manufacturing a nanoplate electrolyte light emitting transistor according to claim 7, wherein the first preset temperature is 160-170 ℃ and the second preset temperature is 235-245 ℃.
  9. 9. The method for manufacturing a nanoplate electrolyte luminescence transistor according to claim 7, wherein the first injection speed is 8-12 ml/h, and the first injection speed is 3-5 ml/h.
  10. 10. The method for preparing a nano-sheet electrolyte luminescence transistor according to claim 6, wherein the process of cleaning the nano-sheet stock solution comprises the following steps: Adding ethanol into the nano-sheet stock solution to generate precipitation; putting the nano-sheet stock solution after precipitation into a centrifuge for centrifugal treatment until supernatant is clear; Pouring out the supernatant, adding n-octane, standing and waiting for the precipitation to be completely dissolved; adding ethyl acetate to the n-octane added solution to produce a precipitate; Putting the solution after precipitation into a centrifuge for centrifugal treatment until supernatant is clear; Pouring out the supernatant and adding chlorobenzene or cyclohexanone reagent to make the precipitate fully dissolved; diluting the solution after adding chlorobenzene or cyclohexanone reagent to obtain nano-sheet solution.

Description

Nanosheet electrolyte luminescence transistor Technical Field The invention relates to the technical field of luminescent transistors, in particular to a nano-sheet electrolyte luminescent transistor. Background The nano-sheet is used as a novel semiconductor nano-particle with the diameter close to the exciton Bohr radius, and the unique quantum confinement effect of the nano-sheet endows the material with adjustable wavelength. In recent years, nanoplatelets have been widely used in various fields such as lasers, detectors, solar cells, and Light Emitting Diodes (LEDs) due to their excellent photoelectric properties (high color purity, high quantum yield, etc.), solution processability, high stability, etc. With the application of nanoplatelets in the field of light emitting display, nanoplatelets exhibit excellent performance in Electroluminescence (EL), and have been an attractive existence in this field. For the nano-sheet EL device, electron leakage caused by unbalanced charge injection and transmission is still a core problem for limiting the efficiency and stability of the device, and unreasonable device structure can cause the leakage current to rise sharply, so that the non-radiative recombination probability of electrons and holes is increased, and the electron leakage and exciton quenching are more serious. Disclosure of Invention In order to overcome the above-mentioned drawbacks and disadvantages of the prior art, the present invention is directed to a nano-sheet electrolyte light emitting transistor, so as to solve the problem of electron leakage caused by unbalanced charge injection and transmission in the conventional light emitting transistor. The aim of the invention is achieved by the following technical scheme: an embodiment of the present invention provides a nanoplate electrolyte light emitting transistor, including: an insulating layer; A gate electrode disposed on one of surfaces of the insulating layer; An n-type semiconductor layer provided on the other surface of the insulating layer opposite to the gate electrode; A source electrode disposed on a part of the surface of the n-type semiconductor; The nano-sheet electrolyte luminous layer is arranged on the surface of the other part of the n-type semiconductor and comprises a heterostructure nano-sheet and electrolyte, wherein the heterojunction nano-sheet is a two-dimensional composite structure formed by coupling two or more different semiconductor materials through interfaces; a hole transport layer disposed on the nanoplatelet electrolyte light emitting layer; a hole injection layer disposed on the hole transport layer; and a drain electrode disposed on the hole injection layer. In some embodiments of the invention, the nano-sheet electrolyte luminescent layer is formed by coating a nano-sheet electrolyte solution, wherein the nano-sheet electrolyte solution is obtained by mutually dissolving (CdSe/CdS) @ (CdS/CdZnS) nano-sheet stock solution and electrolyte. In some embodiments of the invention, the electrolyte is THA-BF4、Li-TFSI、[CH3(CH2)3]4NCl、[CH3(CH2)3]4NBr、C14H32BrP（ tributylethyl phosphine bromide). The embodiment of the invention also provides a preparation method of the nano-sheet electrolyte luminescence transistor, which comprises the following steps: Providing a substrate, wherein the substrate comprises a gate electrode and an insulating layer; preparing an n-type semiconductor on the substrate, wherein the n-type semiconductor covers the surface of the insulating layer; Preparing a source electrode on a part of the surface of the n-type semiconductor; The method comprises the steps of spin coating a nano-sheet electrolyte solution on the surface of the other part of the n-type semiconductor to obtain a nano-sheet electrolyte luminous layer, wherein the nano-sheet electrolyte solution is obtained by mutually dissolving a heterostructure nano-sheet solution and electrolyte; Preparing a hole transport layer on the nanoplatelet electrolyte light emitting layer; preparing a hole injection layer on the hole transport layer; and preparing a drain electrode on the hole injection layer. In some embodiments of the invention, the heterojunction nanoplatelets are (CdSe/CdS) @ (CdS/CdZnS) heterostructure nanoplatelets prepared as: on the basis of a CdSe bare core, firstly, passivating with a CdS crown outside; Depositing single-layer CdS on the top and the bottom of the nano-sheet respectively to be used as seeds for the growth of a final heat injection method; The CdZnS shell was grown vertically at high temperature. In some embodiments of the present invention, the preparation process of the nano-sheet electrolyte solution includes the steps of: cleaning the nano sheet stock solution to obtain a nano sheet solution, wherein the nano sheet stock solution comprises n-hexane and nano sheets dispersed in the n-hexane; the nanoplatelet solution is added to an electrolyte solution and stirred to obtain the nanoplatelet electrolyte