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CN-121985688-A - Display panel, preparation method of display panel and display device

CN121985688ACN 121985688 ACN121985688 ACN 121985688ACN-121985688-A

Abstract

The application provides a display panel, a preparation method of the display panel and the display panel, wherein the laminated structure of a film layer is adjusted to enable the distance between an active layer and a shading layer in the display panel to be close, so that the influence of the distance on the shading effect of the shading layer is reduced, the shading effect of the shading layer on the active layer can be improved, and the adverse influence of illumination on the active layer is reduced.

Inventors

  • CHEN FAXIANG
  • LIU XUE
  • GUO ZIDONG
  • WANG MENGSEN
  • DING LIDONG

Assignees

  • 昆山国显光电有限公司

Dates

Publication Date
20260505
Application Date
20260105

Claims (18)

  1. 1. A display panel comprising a pixel circuit including a first transistor, the first transistor including a first gate and a first channel, the display panel comprising: A substrate; the first light shielding layer is positioned on one side of the substrate and comprises a first light shielding structure; The first insulating layer is positioned on one side of the first shading layer away from the substrate; A first active layer located at one side of the first insulating layer away from the substrate, wherein the first active layer comprises the first channel; the second insulating layer is positioned on one side of the first active layer away from the substrate; A first metal layer which is positioned on one side of the second insulating layer away from the substrate, the first metal layer is provided with the first grid electrode, Wherein, in the direction perpendicular to the substrate, the distance between the first shading structure and the first channel is less than 5000 angstroms.
  2. 2. The display panel according to claim 1, The distance between the first shading structure and the surface of the side, which is far away from the substrate, and the surface of the side, which is close to the substrate, of the first channel is less than 5000 angstroms; preferably, the first channel is located on a surface of the first insulating layer away from the substrate; Preferably, the first insulating layer covers the side wall of the first light shielding structure and the surface away from the substrate.
  3. 3. The display panel of claim 1, the first active layer material being an oxide; preferably, the first active layer material is an oxide of at least one of indium, gallium, zinc.
  4. 4. The display panel of claim 1, a projection of the first light shielding structure on the substrate covering a projection of the first channel on the substrate; The distance between the projection boundary of the first shading structure on the substrate and the projection boundary of the first channel on the substrate is larger than 0.5 mu m; Preferably, a distance between a projection boundary of the first light shielding structure on the substrate and a projection boundary of the first active layer on the substrate is greater than 0.5 μm in a first direction, the first direction being a width direction of the first active layer; Preferably, in a second direction, a distance between a projection boundary of the first light shielding structure on the substrate and a projection boundary of the first gate on the substrate is greater than 0.5 μm, and the second direction is a width direction of the first gate; Preferably, the first active layer extends along a second direction, the first gate extends along the first direction, a projection of the first active layer on the substrate and a projection of the first gate on the substrate have an overlapping portion, the overlapping portion is a projection of the first channel on the substrate, and the first direction and the second direction intersect on a plane parallel to the substrate; the first transistor is located in the display area, and the first transistor is a switching transistor.
  5. 5. The display panel of claim 1, further comprising a second transistor in the non-display region, The second transistor comprises a second channel and a second grid electrode, and the second channel and the second grid electrode are positioned on one side of the first shading layer close to the substrate; preferably, the display panel further comprises a second light shielding structure positioned on one side of the second channel close to the substrate; Preferably, the material of the second channel is different from the material of the first channel; preferably, the material of the second channel comprises polysilicon.
  6. 6. The display panel of claim 5, the second gate electrode being located on a third metal layer located on a side of the first light shielding layer adjacent to the substrate; a dielectric layer is arranged between the third metal layer and the first shading layer.
  7. 7. The display panel of claim 1, further comprising a second transistor in the non-display region, The second transistor comprises a second channel and a second grid, the second channel and the first channel are arranged in the same layer and the same material, and the second grid and the first grid are arranged in the same layer and the same material; Preferably, the display panel further includes a second light shielding structure, and the second light shielding structure and the first light shielding structure are disposed in the same layer and the same material.
  8. 8. The display panel of claim 1, further comprising: a second metal layer located on a side of the first metal layer away from the substrate, the second metal layer comprising: a first source signal line connected to the first active layer through a first via hole and located at one end of the first channel; A first drain signal line connected to the first active layer through a second via hole and located at the other end of the first channel; A first gate signal line connected to the first gate through a third via hole; The first shading signal line is connected to the first shading structure through the fourth via hole.
  9. 9. The display panel of claim 8, further comprising: A third insulating layer located between the first metal layer and the second metal layer; preferably, the first via hole and the second via hole are located in the third insulating layer and the second insulating layer; Preferably, the third via hole is located in the third insulating layer; Preferably, the fourth via is located in the first insulating layer, the second insulating layer, and the third insulating layer; preferably, the depth of the fourth via is greater than the depths of the first via, the second via, and the third via; preferably, the depth of the first via hole and the second via hole is greater than the depth of the third via hole.
  10. 10. The display panel of claim 1, further comprising: a third transistor in the display region, the third transistor comprising, The third channel is positioned on the first active layer and is arranged at intervals with the first channel; The third grid electrode is positioned on the first metal layer and is arranged at intervals with the first grid electrode; preferably, the display panel further comprises a third shading structure located on the first shading layer, and the third transistor is a driving transistor.
  11. 11. The display panel of claim 10, the third transistor further comprising: a third source signal line connected to the first active layer through a fifth via hole and located at one end of the third channel; a third drain signal line connected to the first active layer through a sixth via hole and located at the other end of the third channel; A third gate signal line connected to the third gate through a seventh via hole; and the third shading signal line is connected to the third shading structure through an eighth via hole.
  12. 12. The display panel of claim 10, the third light shielding structure having a distance between a projected boundary of the substrate and a projected boundary of the third channel on the substrate of greater than 0.5 μιη; Preferably, a distance between a projection boundary of the third light shielding structure on the substrate and a projection boundary of the first active layer on the substrate is greater than 0.5 μm in a first direction, the first direction being a width direction of the first active layer; Preferably, in a second direction, a distance between a projection boundary of the substrate and a projection boundary of the third gate electrode on the substrate is greater than 0.5 μm, and the second direction is a width direction of the third gate electrode; Preferably, the first active layer extends along a second direction, the third gate extends along the first direction, a superposition portion is formed between the projection of the first active layer on the substrate and the projection of the third gate on the substrate, the superposition portion is the projection of the third channel on the substrate, and the first direction and the second direction intersect on a plane parallel to the substrate.
  13. 13. The display panel of claim 10, further comprising: the third metal layer is positioned on one side of the third shading structure, close to the substrate, and is provided with a first electrode plate; The third shading structure is multiplexed into a second electrode plate, and the first electrode plate and the second electrode plate form a capacitor; The projection of the first electrode plate on the substrate is overlapped with the projection part of the second electrode plate on the substrate; preferably, the projection of the first electrode plate on the substrate covers the projection of the second electrode plate on the substrate.
  14. 14. A display panel, comprising: A substrate; the first light shielding layer is positioned on one side of the substrate and comprises a first light shielding structure; The first active layer is positioned on one side of the first shading layer away from the substrate, and is provided with a first channel; A first metal layer positioned on one side of the first active layer away from the substrate, the first metal layer being provided with a first gate, Wherein the projection of the first shading structure on the substrate covers the projection of the first channel on the substrate, The distance between the projection boundary of the first shading structure on the substrate and the projection boundary of the first channel on the substrate is larger than 0.5 mu m.
  15. 15. The display panel of claim 15, wherein a distance between a projected boundary of the first light shielding structure at the substrate and a projected boundary of the first active layer at the substrate is greater than 0.5 μm in a first direction, the first direction being a width direction of the first active layer; Preferably, in a second direction, a distance between a projection boundary of the first light shielding structure on the substrate and a projection boundary of the first gate on the substrate is greater than 0.5 μm, and the second direction is a width direction of the first gate; Preferably, the first active layer extends along a second direction, the first gate extends along the first direction, a projection of the first active layer on the substrate and a projection of the first gate on the substrate have an overlapping portion, the overlapping portion is a projection of the first channel on the substrate, and the first direction and the second direction intersect on a plane parallel to the substrate; Preferably, the first gate and the first channel form a first transistor, the first transistor is located in the display area, and the first transistor is at least one of a switching transistor or a driving transistor.
  16. 16. The display panel of claim 15, further comprising a second transistor in the non-display region, The second transistor comprises a second channel and a second grid electrode, and the second channel and the second grid electrode are positioned on one side of the first shading layer close to the substrate; preferably, the display panel further comprises a second light shielding structure positioned on one side of the second channel close to the substrate; Preferably, the material of the second channel is different from the material of the first channel; Preferably, the material of the second channel comprises polysilicon, and the material of the first channel comprises a semiconductor oxide.
  17. 17. A method of manufacturing a display panel, comprising: forming a substrate; sequentially forming a second active layer and a third metal layer in the non-display area, and respectively patterning to form a second channel and a second grid; forming a dielectric layer on the second gate; Forming a first light shielding layer on the dielectric layer, and patterning the first light shielding layer to form a first light shielding structure and a second light shielding structure; Forming a first insulating layer, a first active layer, a second insulating layer, a first metal layer and a third insulating layer on the first shading layer in sequence, wherein the first active layer is patterned and ion-implanted to form a first channel and a third channel, and the first metal layer is patterned to form a first grid and a third grid; Etching the film layer to the first grid electrode, the third grid electrode, the two sides of a first channel of the first active layer and the two sides of a third channel of the first active layer through a first hole; Etching the film layer to the two sides of the second grid electrode of the third metal layer and the second channel of the second active layer through a second hole; the first active layer and the second active layer are different in material.
  18. 18. A display device comprising the display panel of any one of claims 1-17.

Description

Display panel, preparation method of display panel and display device Technical Field The application relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and the display panel. Background Organic LIGHT EMITTING (OLED) and flat display devices based on light emitting Diode (LIGHT EMITTING) technology have been widely used in various consumer electronic products such as mobile phones, televisions, notebook computers, and desktop computers, because of their advantages such as high image quality, power saving, thin body, and wide application range. But the performance of current OLED display products is to be improved. Disclosure of Invention In order to overcome the above-mentioned shortcomings in the prior art, an object of the present application is to provide a display panel comprising A substrate; the first light shielding layer is positioned on one side of the substrate and comprises a first light shielding structure; The first active layer is positioned on one side of the first shading layer away from the substrate, and is provided with a first channel; A first metal layer positioned on one side of the first active layer away from the substrate, the first metal layer being provided with a first gate, Wherein, in the direction perpendicular to the substrate, the distance between the first shading structure and the first channel is less than 5000 angstroms. In some alternative embodiments, the display panel further includes: A first insulating layer between the first light shielding structure and the first channel, the first insulating layer having a thickness of less than 5000 angstroms; preferably, the distance between the first shading structure and the surface of the first channel, which is far away from the side surface of the substrate, and the surface of the first channel, which is close to the side surface of the substrate, is less than 5000 angstroms; preferably, the first channel is located on a surface of the first insulating layer away from the substrate; Preferably, the first insulating layer covers the side wall of the first light shielding structure and the surface away from the substrate. In some alternative embodiments, the first active layer material is an oxide semiconductor; preferably, the first active layer material is an oxide of at least one of indium, gallium, zinc. In some alternative embodiments, the first light shielding structure has a distance between the projected boundary of the substrate and the projected boundary of the first channel on the substrate of greater than 0.5 μm; Preferably, a distance between a projection boundary of the first light shielding structure on the substrate and a projection boundary of the first active layer on the substrate is greater than 0.5 μm in a first direction, the first direction being a width direction of the first active layer; Preferably, in a second direction, a distance between a projection boundary of the first light shielding structure on the substrate and a projection boundary of the first gate on the substrate is greater than 0.5 μm, and the second direction is a width direction of the first gate; Preferably, the first active layer extends along a second direction, the first gate extends along the first direction, a projection of the first active layer on the substrate and a projection of the first gate on the substrate have an overlapping portion, the overlapping portion is a projection of the first channel on the substrate, and the first direction and the second direction intersect on a plane parallel to the substrate; preferably, the first gate and the first channel form a first transistor, the first transistor is located in the display area, and the first transistor is a switching transistor. In some alternative embodiments, the display panel further comprises a second transistor in the non-display region, The second transistor comprises a second channel and a second grid electrode, and the second channel and the second grid electrode are positioned on one side of the first shading layer close to the substrate; preferably, the display panel further comprises a second light shielding structure positioned on one side of the second channel close to the substrate; Preferably, the material of the second channel is different from the material of the first channel; preferably, the material of the second channel comprises polysilicon. In some alternative embodiments, the second gate is located on a third metal layer, and the third metal layer is located on a side of the first light shielding layer, which is close to the substrate; a dielectric layer is arranged between the third metal layer and the first shading layer. In some alternative embodiments, the display panel further comprises a second transistor in the non-display region, The second transistor comprises a second channel and a second grid, the second channel and the first channel are arranged in the same layer