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CN-121985692-A - Quantum dot color conversion device manufacturing method and display panel containing quantum dot color conversion device

CN121985692ACN 121985692 ACN121985692 ACN 121985692ACN-121985692-A

Abstract

The application provides a preparation method of a quantum dot color conversion device and a display panel containing the quantum dot color conversion device. According to the preparation method, the first positive photoresist curing layer is obtained through the first exposure and development, the first quantum dot layer is obtained through the second exposure and development, the first positive photoresist curing layer is removed through the third exposure and development, and the residual quantum dot negative photoresist is eluted along with the elution of the first positive photoresist curing layer, so that the technical effect of less development residues is achieved.

Inventors

  • ZHANG ZHENXING

Assignees

  • 纳晶科技股份有限公司

Dates

Publication Date
20260505
Application Date
20251201

Claims (10)

  1. 1. The preparation method of the quantum dot color conversion device is characterized by comprising the following steps of: Providing a substrate, and arranging a first positive photoresist layer on the substrate; a first mask plate is arranged above the substrate, the first positive photoresist layer is subjected to exposure treatment and then is developed, and a first positive photoresist curing layer with a plurality of first pits is obtained, and the positions of the first pits correspond to through holes of the first mask plate; setting a first quantum dot negative photoresist on the first positive photoresist curing layer with a plurality of first pits, wherein part of the first quantum dot negative photoresist is positioned in the first pits, the other part of the first quantum dot negative photoresist is positioned on the surface of the first positive photoresist curing layer far away from the substrate, and the first quantum dot negative photoresist comprises first scattering particles; Exposing the first quantum dot negative photoresist by using a second mask, wherein the position of the first pit corresponds to the through hole of the second mask, and a plurality of solidified first quantum dot layers positioned on the first pit are obtained after development; And arranging a third mask plate above the substrate, wherein the third mask plate is opaque at the first pit, the first positive photoresist curing layer is developed after exposure treatment, and residual first quantum dot negative photoresist on the surface of the first positive photoresist curing layer, which is far away from the substrate, is eluted along with elution of the first positive photoresist curing layer, so that a first quantum dot color conversion device is obtained.
  2. 2. The method of manufacturing according to claim 1, characterized in that the method of manufacturing further comprises: A second positive photoresist layer is arranged on the first quantum dot color conversion device; A fourth mask plate is arranged above the substrate, exposure treatment is carried out, and development is carried out, so that a second positive photoresist curing layer with a plurality of second pits is obtained, and the positions of the second pits correspond to through holes of the fourth mask plate; Setting a second quantum dot negative photoresist on the second positive photoresist curing layer with a plurality of second pits, wherein part of the second quantum dot negative photoresist is positioned in the second pits, the other part of the second quantum dot negative photoresist is positioned on the surface of the second positive photoresist curing layer far away from the substrate, and the second quantum dot negative photoresist comprises second scattering particles; Exposing the second quantum dot negative photoresist by using a fifth mask, wherein the position of the second pit corresponds to the through hole of the fifth mask, and a plurality of solidified second quantum dot layers positioned on the second pit are obtained after development; And arranging a sixth mask plate above the substrate, wherein the sixth mask plate is opaque at the second pit, the second positive photoresist curing layer is developed after exposure treatment, and residual second quantum dot negative photoresist on the surface of the second positive photoresist curing layer far away from the substrate is eluted along with elution of the second positive photoresist curing layer, so that a second quantum dot color conversion device is obtained.
  3. 3. The method of claim 1, wherein the first scattering particles comprise 12-20% of the first quantum dot negative photoresist.
  4. 4. The method of claim 1, wherein the first positive photoresist cured layer has a thickness of 0.3 microns or more, preferably 0.5 to 1 micron.
  5. 5. The method of claim 1, wherein the first quantum dot layer has a thickness of 2-10 microns.
  6. 6. The method of claim 1, wherein the first positive photoresist is selected from the group consisting of diazonaphthoquinone and polymethyl methacrylate.
  7. 7. The method according to claim 1, wherein the developing solution used for the development is an aqueous solution of TMAH or an aqueous solution of KOH.
  8. 8. The method of claim 1, wherein the distance between the quantum dot layers is 1-5 microns.
  9. 9. The method of claim 1, wherein the first positive photoresist cured layer has a thickness that is less than or equal to the thickness of the first quantum dot layer.
  10. 10. A display panel is characterized by comprising the quantum dot color conversion device prepared by the preparation method according to any one of claims 1-9, and further comprising a plurality of light emitting devices positioned on any one side of the substrate, wherein the light emitting devices correspond to each quantum dot layer so as to excite the quantum dot layer.

Description

Quantum dot color conversion device manufacturing method and display panel containing quantum dot color conversion device Technical Field The application relates to the technical field of quantum dot color conversion, in particular to a preparation method of a quantum dot color conversion device and a display panel containing the quantum dot color conversion device. Background At present, a quantum dot color conversion technology is widely adopted in the market to realize high-color-gamut display, such as OLED superimposed quantum dot color conversion or microLED superimposed quantum dot color conversion. However, the color conversion of the quantum dot material brings other problems, and the important problem is how to ensure the development residue of the photoresist on the premise of blue light absorption. Disclosure of Invention The application aims to provide a color conversion substrate, a preparation method thereof and a display panel containing the same, which solve the technical problem of developing residues of photoresist on the premise of ensuring blue light absorption. In order to solve the technical problems, the first aspect of the application provides a preparation method of a quantum dot color conversion device, which is characterized by comprising the steps of providing a substrate, arranging a first positive photoresist layer on the substrate, arranging a first mask above the substrate, exposing and developing the first positive photoresist layer to obtain a first positive photoresist curing layer with a plurality of first pits, the positions of the first pits correspond to the through holes of the first mask, arranging a first quantum dot negative photoresist on the first positive photoresist curing layer with the plurality of first pits, arranging a part of first quantum dot negative photoresist in the plurality of first pits, arranging another part of first quantum dot negative photoresist on the surface of the first positive photoresist curing layer far away from the substrate, exposing the first quantum dot negative photoresist with a second mask to obtain a first positive photoresist curing layer with the plurality of first pits, developing to obtain a plurality of first positive photoresist curing layers on the first pits, arranging a part of first quantum dot negative photoresist on the first positive photoresist curing layer far away from the surface of the substrate, eluting the first quantum dot negative photoresist layer on the surface of the first positive photoresist layer, and leaving the first quantum dot negative photoresist layer on the surface of the first positive photoresist layer after the first positive photoresist layer is exposed. The preparation method further comprises the steps of arranging a second positive photoresist layer on the first quantum dot color conversion device, arranging a fourth mask plate above the substrate, performing exposure treatment, developing to obtain a second positive photoresist curing layer with a plurality of second pits, wherein the positions of the second pits correspond to through holes of the fourth mask plate, arranging a second quantum dot negative photoresist on the second positive photoresist curing layer with the plurality of second pits, arranging part of the second quantum dot negative photoresist in the second pits, arranging the other part of the second quantum dot negative photoresist on the surface of the second positive photoresist curing layer far away from the substrate, exposing the second quantum dot negative photoresist comprising second scattering particles by using a fifth mask plate, obtaining a plurality of cured second quantum dot layers on the second pits after development, arranging the sixth mask plate above the substrate, enabling the sixth mask plate to be not located at the second position, enabling the second positive photoresist curing layer to be subjected to exposure treatment, enabling the second quantum dot negative photoresist to be eluted and located on the surface of the second positive photoresist layer far away from the substrate after the second positive photoresist is subjected to exposure treatment. Further, the content of the first scattering particles in the first quantum dot negative photoresist is 12-20%. Further, the thickness of the first positive photoresist cured layer is 0.3 micrometers or more, preferably 0.5 to 1 micrometer. Further, the thickness of the first quantum dot layer is 2-10 microns. Further, the first positive photoresist is selected from the group consisting of diazonaphthoquinone and polymethyl methacrylate. Further, the developer used for development is an aqueous solution of TMAH or an aqueous solution of KOH. Further, the interval distance between the quantum dot layers is 1-5 microns. Further, the thickness of the first positive photoresist curing layer is less than or equal to the thickness of the first quantum dot layer. In a second aspect of the present ap