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CN-121985700-A - Chiral perovskite circular polarization photodetector and preparation method thereof

CN121985700ACN 121985700 ACN121985700 ACN 121985700ACN-121985700-A

Abstract

The invention relates to the technical field of photoelectric detectors, in particular to a chiral perovskite circular polarization photodetector and a preparation method thereof. The chiral perovskite circular polarization detector comprises a conductive substrate, a hole transmission layer, a chiral perovskite thin film doped with a chiral dopant, an electron transmission layer and an electrode layer, wherein the chiral perovskite thin film doped with the chiral dopant is a chiral active layer, and the chiral active layer is a photosensitive material layer capable of directly absorbing left-handed and right-handed circularly polarized light in a different manner and directly converting optical chiral information into electric signal difference. According to the chiral perovskite circularly polarized light detection device, through reasonable doping of the chiral dopant, improvement of chiral optical activity of the film is achieved, and under the condition that no bias voltage 505 nm circularly polarized light irradiates, the calculated circular polarization sensitivity factor is greater than or equal to 0.3, and the circularly polarized light detection device has high circularly polarized light detection performance.

Inventors

  • LI LIANG
  • TIAN WEI
  • DAI ZHIPENG

Assignees

  • 苏州大学

Dates

Publication Date
20260505
Application Date
20251225

Claims (10)

  1. 1. The preparation method of the chiral perovskite circular polarization photodetector is characterized by comprising the following steps of: s11, coating a hole transport layer material on the surface of a substrate to form a hole transport layer; s12, coating a precursor solution on the surface of the hole transport layer to form a chiral perovskite thin film layer, wherein the precursor solution comprises a chiral dopant, a chiral perovskite material and an organic solvent; S13, coating an electron transport layer material on the surface of the chiral perovskite thin film layer to form an electron transport layer; and S14, evaporating electrode materials on the surface of the electron transport layer to obtain the chiral perovskite circular polarization photodetector.
  2. 2. A process for preparing a circular polarized light detector for chiral perovskite according to claim 1, wherein the chiral dopant is one or more of (R) - (+) -1,1 '-binaphthyl-2, 2' -diamine, (S) - (-) -1,1 '-binaphthyl-2, 2' -diamine, R-1,1 '-binaphthol-2-ol, S-1,1' -binaphthol, R-2,2 '-bis (diphenylphosphine) -1,1' -binaphthyl, S-2,2 '-bis (diphenylphosphine) -1,1' -binaphthyl, R-binaphthyl dibenzy-ammonium and S-binaphthyl dibenzy-ammonium.
  3. 3. The method for preparing a circular polarized light detector of chiral perovskite according to claim 1, wherein the thickness of the chiral perovskite thin film layer is 800-1200 nm.
  4. 4. The method of claim 1, wherein the chiral perovskite material is one or more of (R-ClMBA) 2 PbI 4 、(S-ClMBA) 2 PbI 4 、(R-MBA) 2 PbI 4 、(S-MBA) 2 PbI 4 、(R-FMBA) 2 PbI 4 and (S-FMBA) 2 PbI 4 .
  5. 5. The preparation method of the chiral perovskite circular polarization photodetector according to claim 1, wherein the chiral perovskite material is obtained by cooling and crystallizing a chiral ligand, hydroiodic acid and lead iodide after reacting in a water bath at 80-120 ℃ for 0.5-4 h, wherein the chiral ligand is selected from R-ClMBA, S-ClMBA, R-MBA, S-MBA, R-FMBA or S-FMBA.
  6. 6. The method for preparing a circular polarized light detector for chiral perovskite according to claim 1, wherein the hole transport layer is one or more of PEDOT PSS, PTAA and NiO X .
  7. 7. The method for preparing a circular polarized light detector of chiral perovskite according to claim 1, wherein the electron transport layer is one or both of PCBM and C 60 .
  8. 8. The method for preparing a circular polarized light detector for chiral perovskite according to claim 1, wherein the electrode material is one or more of silver, nickel, carbon, gold, copper, bismuth and aluminum.
  9. 9. The method for preparing a circular polarized light detector for chiral perovskite according to claim 1, wherein the concentration of the chiral perovskite material in the precursor solution is 0.3-0.9 mol/L, and the concentration of the chiral dopant is 1-7wt%.
  10. 10. A chiral perovskite circularly polarized light detector prepared by the method of any one of claims 1-9.

Description

Chiral perovskite circular polarization photodetector and preparation method thereof Technical Field The invention relates to the technical field of photoelectric detectors, in particular to a chiral perovskite circular polarization photodetector and a preparation method thereof. Background The photoelectric detector is used as a photoelectric conversion device and has irreplaceable important roles in the wide fields of imaging sensing, optical communication, environment monitoring, consumer electronics and the like. Along with the iteration of information technology and the popularization of the internet of things technology, more stringent requirements are put forward on the comprehensive performance and the functional integration level of the detector, and the research in the field is promoted to be deeply developed. The working mechanism of the traditional photoelectric detector is based on the photoelectric effect of semiconductor materials, and the process mainly comprises photon absorption, excitation and generation of photon-generated carriers, separation and transportation of carriers under the action of built-in or external fields, and finally, the effective conversion from optical signals to electric signals is completed. In the current dual background of energy challenges and rapid development of information technology, the demand for photoelectric functional devices has exceeded the traditional single performance index, and a new height of functional integration and intelligence is pursued. The development of modern optoelectronic technology clearly shows that the value core of the device is changing from realizing basic photoelectric conversion to 'intelligent sense' with complex information sensing and processing capability. This evolution has driven researchers to focus on integrating multiple advanced functions in a single device, such as achieving broad spectrum spectral identification from deep ultraviolet to mid-infrared, or constructing detectors sensitive to light polarization states (including linear and circular polarization), developing narrow-band photodetectors with wavelength resolution capabilities, and this deep functional integration enables the detector to resolve multi-dimensional properties of light intensity, wavelength, polarization, phase, etc. Furthermore, the combination of light detection and signal storage, logic operation and even neuromorphic calculation to construct a photoelectric device with learning and memory functions has become an important direction for leading edge exploration. The deep functional diversification and integration not only improves the system efficiency and reduces the critical path of the volume and the power consumption of the system, but also opens the core technology foundation stone of the next-generation intelligent sensing, imaging and information processing system, and represents the necessary trend of the development of the photoelectronic technology. In many special light signals, circularly polarized light carries unique information about its chirality, which is not available in conventional natural light detection. The circularly polarized light detection has great application potential in the fields of quantum information processing, three-dimensional stereoscopic display, biomedical imaging, military encryption communication and the like. Conventional technology paths for achieving circularly polarized light detection typically rely on integrating a series of discrete optical elements, such as a combination of a quarter-wave plate and a linear polarizer, into the front end of a conventional photodetector. However, this approach has inherent limitations in that the system is complex in structure, bulky, costly to manufacture, and introduces additional optical energy loss, while its effective operating band is limited by the characteristics of the optical element. To overcome these obstacles, it is desirable to directly prepare a semiconductor material (i.e., a chirally sensitive photovoltaic material) that is capable of producing an intrinsic differential response to circularly polarized light. In this context, organic-inorganic hybrid perovskite materials are ideal photovoltaic materials because of their excellent photovoltaic properties (such as high absorption coefficient, long carrier diffusion length, tunable band gap, and good carrier mobility). More importantly, chiral perovskite having chiral optical activity can be formed by introducing chiral organic components (e.g., chiral amine cations) into the crystal structure of the perovskite. The material can interact with circularly polarized light with different chiralities in a different mode, shows the characteristics of circular dichroism (Circular Dichroism, CD), circular polarized light (Circularly Polarized Luminescence, CPL) and the like, and provides a solid material foundation for realizing an on-chip circularly polarized light detector without an external optical e