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CN-121985701-A - Perovskite battery and coating method thereof

CN121985701ACN 121985701 ACN121985701 ACN 121985701ACN-121985701-A

Abstract

The application relates to the technical field of solar cells, and particularly discloses a perovskite cell and a coating method thereof. The coating method of the perovskite battery comprises the steps of sequentially coating an anti-ultraviolet anti-reflection layer, a transparent conductive oxide layer, an electron transmission layer, a perovskite active layer, a hole transmission layer and a metal electrode on a substrate, wherein the anti-ultraviolet anti-reflection layer is formed by combining two or more transparent materials with different refractive indexes, and the content of each material continuously changes from one side of the anti-ultraviolet anti-reflection layer to the other side of the anti-ultraviolet anti-reflection layer to obtain the anti-ultraviolet anti-reflection layer with the refractive index changing unidirectionally, so that the refractive index of the substrate changes unidirectionally to the transparent conductive oxide layer. The anti-ultraviolet anti-reflection layer is formed by connecting one side of the substrate to the other side of the electron transmission layer, and refractive index is unidirectionally changed.

Inventors

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Assignees

  • 苏州市镀量恒科技有限公司

Dates

Publication Date
20260505
Application Date
20251229

Claims (10)

  1. 1. A film plating method of a perovskite battery is characterized by comprising the steps of sequentially plating an anti-ultraviolet anti-reflection layer, a transparent conductive oxide layer, an electron transmission layer, a perovskite active layer, a hole transmission layer and a metal electrode on a substrate, wherein the anti-ultraviolet anti-reflection layer is formed by combining two or more transparent materials with different refractive indexes, and the content of each material continuously changes from one side of the anti-ultraviolet anti-reflection layer to the other side of the anti-ultraviolet anti-reflection layer to obtain the anti-ultraviolet anti-reflection layer with the refractive index changing unidirectionally, so that the refractive index from the substrate to the transparent conductive oxide layer changes unidirectionally.
  2. 2. The method according to claim 1, wherein the refractive index of the anti-ultraviolet anti-reflection layer continuously increases from one side of the substrate to the other side of the transparent conductive oxide layer, the refractive index of the anti-ultraviolet anti-reflection layer on the side of the substrate is within 0.03 larger than the refractive index of the substrate, and the refractive index of the anti-ultraviolet anti-reflection layer on the side of the transparent conductive oxide layer is within 0.03 smaller than the refractive index of the transparent conductive oxide layer.
  3. 3. The method according to claim 1 or 2, wherein the anti-ultraviolet anti-reflection layer is made of a composite of cerium phosphate and yttrium fluoride, and the concentration of yttrium fluoride is gradually decreased and the concentration of cerium phosphate is gradually increased from one side of the anti-ultraviolet anti-reflection layer connected with the substrate to the other side of the anti-ultraviolet anti-reflection layer connected with the transparent conductive oxide layer.
  4. 4. The method for coating a perovskite battery according to claim 3, wherein when the anti-ultraviolet anti-reflection layer is deposited, co-sputtering is carried out by taking a cerium phosphate target and a yttrium fluoride target as sources, the total sputtering power density of the cerium phosphate target and the yttrium fluoride target is unchanged, so as to excite the cerium phosphate target and the yttrium fluoride target, the sputtering power density of the cerium phosphate target is set to be 0W/cm 2 , a pure yttrium fluoride film is deposited as an initial layering, the sputtering power density of the yttrium fluoride target is reduced in a gradient manner in a subsequent sputtering process, the sputtering power density of the cerium phosphate target is increased in a gradient manner, and a multi-layered anti-ultraviolet anti-reflection layer is obtained, wherein the anti-ultraviolet anti-reflection layer is formed by gradually reducing the yttrium fluoride ratio from 100wt% of the initial layering to 0wt% of the final layering from one side connected with the substrate to the other side connected with the transparent conductive oxide layer.
  5. 5. The method according to claim 4, wherein the sputtering gas pressure and the substrate temperature are fixed, the time for the start of deposition and the time for the end of deposition are each t, the sputtering power density of the cerium phosphate target is reduced once every time the same time t passes, the sputtering power density of the yttrium fluoride target is increased, and the value of the sputtering power density of the cerium phosphate target is reduced every time the sputtering power density of the yttrium fluoride target is increased.
  6. 6. The method according to claim 5, wherein the initial sputtering power density of the cerium phosphate target is 9 to 10W/cm 2 , the sputtering power density of the cerium phosphate target is reduced by 0.4 to 0.5W/cm 2 /min, and the final sputtering power density of the cerium phosphate target is 0W/cm 2 when the anti-ultraviolet anti-reflection layer is deposited.
  7. 7. The method according to claim 5, wherein the sputtering gas pressure is any value between 0.3 and 0.5Pa and the substrate temperature is any value between 50 and 300 ℃ when the anti-ultraviolet anti-reflection layer is deposited.
  8. 8. The method for coating a perovskite battery according to claim 3, wherein the thickness of the anti-ultraviolet anti-reflection layer is 90-120 nm.
  9. 9. The method for coating a perovskite battery according to claim 3, wherein the substrate is soda lime glass with a refractive index of 1.50-1.53, and the transparent conductive oxide layer is indium tin oxide with a refractive index of 1.80-1.83.
  10. 10. A perovskite battery, characterized in that the perovskite battery is prepared by the coating method of any one of claims 1-9.

Description

Perovskite battery and coating method thereof Technical Field The application relates to the technical field of solar cells, in particular to a perovskite cell and a coating method thereof. Background Perovskite Solar Cells (PSCs) are a research hotspot of a new generation of photovoltaic technology due to excellent photoelectric properties, such as high light absorption coefficient, adjustable band gap and long carrier diffusion length. The photoelectric conversion efficiency of the photoelectric conversion device is improved to 26% from the initial 3.8% within a period of more than ten years, the preparation cost is low, and the photoelectric conversion device has a huge commercialization prospect. A typical perovskite solar cell structure generally includes a transparent conductive substrate, an electron transport layer, a perovskite light absorbing layer, a hole transport layer, and a metal electrode. However, this structure has the following inherent drawbacks. The ultraviolet stability is poor, and organic components and metal-halogen bonds in the perovskite material are sensitive to ultraviolet light. Long-term uv irradiation can lead to degradation of the material, resulting in irreversible degradation of the battery efficiency, reducing its lifetime. Optical reflection loss, namely, certain light reflection exists on the perovskite film and the interface thereof, so that the total amount of incident light entering the active layer is limited, and the light absorption efficiency is reduced. The scheme of the ultraviolet resistant coating or the antireflection coating adopted by the related technology has insufficient remarkable effects in improving the ultraviolet degradation resistance and reducing the light reflectivity. Disclosure of Invention In view of the problems that the ultraviolet resistant coating or the antireflection coating adopted by the related art has insufficient effects in improving the ultraviolet resistant degradation capability and reducing the light reflectivity, the application provides a technical scheme capable of remarkably improving the ultraviolet resistant degradation capability and simultaneously remarkably reducing the light reflectivity. In a first aspect, the present application provides a method for coating a perovskite battery, and adopts the following technical scheme. A coating method of a perovskite battery comprises the steps of sequentially coating an anti-ultraviolet anti-reflection layer, a transparent conductive oxide layer, an electron transmission layer, a perovskite active layer, a hole transmission layer and a metal electrode on a substrate, wherein the anti-ultraviolet anti-reflection layer is formed by combining two or more transparent materials with different refractive indexes, and the content of each material continuously changes from one side of the anti-ultraviolet anti-reflection layer to the other side of the anti-ultraviolet anti-reflection layer to obtain the anti-ultraviolet anti-reflection layer with the refractive index changing unidirectionally, so that the refractive index from the substrate to the transparent conductive oxide layer changes unidirectionally. Through adopting above-mentioned technical scheme, with the anti-ultraviolet anti-reflection coating setting at glass medial surface, not directly expose to the air, be difficult for droing at the use. Light is emitted into the substrate from air, and the light is reflected because the refractive indexes of the light and the substrate are suddenly changed, and the anti-ultraviolet anti-reflection layer realizes unidirectional change of the refractive index from the substrate to the transparent conductive oxide layer, so that the speed of change of the refractive index from the substrate to the transparent conductive oxide layer is slowed down, and the light reflection is reduced. Unidirectional changes, i.e. unidirectional increases or unidirectional decreases, adjacent layering may be the same. When the refractive index n (z) continuously varies from the substrate (z=0, n=ns) to the transparent conductive oxide layer (z=d, n=n0), the entire film layer of the substrate to the transparent conductive oxide layer can be regarded as an infinitely thin uniform layer composition of infinite number. Each thin layer has a small refractive index variation dn. In this case, calculating the total reflectivity requires solving the electromagnetic field equation. For normal incidence, the reflection coefficient can be described by a differential equation. If the refractive index change is sufficiently smooth, under partial coherence approximation, the reflectivity R can be approximated as: 。 the key to this equation above is that the magnitude of the reflectivity depends on the logarithmic rate of change of the refractive index Is a function of the integral of (a). For an ideal gradient index profile (e.g. linear or parabolic variations), this integral value may approach zero, which means that t