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CN-121985705-A - Method for improving crystallization quality of perovskite thin film

CN121985705ACN 121985705 ACN121985705 ACN 121985705ACN-121985705-A

Abstract

The invention discloses a method for improving the crystallization quality of a perovskite thin film, and belongs to the technical field of solar cells. The method for improving the crystallization quality of the perovskite film comprises the following steps of preparing a buried interface through atomic layer deposition, adding N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride into a perovskite precursor solution, and then depositing the N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride on the buried interface to obtain the perovskite film, wherein the buried interface is an aluminum oxide film, a tin oxide film, a zinc oxide film, an indium oxide film or a titanium oxide film, the pulse time of a metal source in atomic layer deposition is 0.01-0.02s, and the pulse time of an oxidation source in atomic layer deposition is 0.001-1 s. The invention utilizes atomic layer deposition technology to prepare a flat buried bottom interface, and N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride is added into perovskite precursor solution, and the interface and the body cooperate to jointly regulate and control the perovskite nucleation crystallization process.

Inventors

  • HU TING
  • CHEN YIWANG
  • CAI ZIJIAN

Assignees

  • 南昌大学

Dates

Publication Date
20260505
Application Date
20260112

Claims (10)

  1. 1. A method for improving the crystallization quality of a perovskite thin film, comprising the steps of: Preparing a buried bottom interface through atomic layer deposition; Adding N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride into a perovskite precursor solution to obtain a perovskite precursor solution containing N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride, and depositing the perovskite precursor solution containing N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride on a buried bottom interface to obtain a perovskite film; the buried bottom interface is an aluminum oxide film, a tin oxide film, a zinc oxide film, an indium oxide film or a titanium oxide film; the pulse time of the metal source in the atomic layer deposition is 0.01-0.02s, and the pulse time of the oxidation source in the atomic layer deposition is 0.001-1 s.
  2. 2. The method for improving the crystallization quality of a perovskite thin film according to claim 1, wherein the metal source used for atomic layer deposition is an aluminum source, a tin source, a zinc source, an indium source or a titanium source; the aluminum source is trimethylaluminum or triisobutylaluminum; the tin source is tetra (dimethylamino) tin; The zinc source is diethyl zinc; The indium source is trimethyl indium; The titanium source is tetra (dimethylamino) titanium.
  3. 3. The method for improving the crystallization quality of a perovskite thin film according to claim 1, wherein the oxidation source used for atomic layer deposition is water, ozone or hydrogen peroxide.
  4. 4. The method of claim 1, wherein the buried interface has a thickness of 0.3-8 a.
  5. 5. The method for improving the crystallization quality of a perovskite thin film according to claim 1, wherein the perovskite precursor solution is 1.5mol/L FA 0.814 MA 0.136 Cs 0.05 Pb(I 0.923 Br 0.045 Cl 0.032 ) 3 solution.
  6. 6. The method for improving the crystallization quality of a perovskite thin film according to claim 1, wherein the ratio between the perovskite precursor solution and the N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride is 1mL (0.2-0.5 mg).
  7. 7. A perovskite thin film, characterized in that it is prepared by the method for improving the crystallization quality of a perovskite thin film according to any one of claims 1 to 6.
  8. 8. Use of the perovskite thin film of claim 7 in a perovskite device.
  9. 9. A perovskite device comprising the perovskite thin film of claim 7.
  10. 10. The perovskite device according to claim 9, comprising, in order, an indium tin oxide glass layer, [2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid film, the perovskite film of claim 7, a phenethyliodide film, [6,6] -phenyl C 61 methyl butyrate film, a cupro-film, a silver electrode.

Description

Method for improving crystallization quality of perovskite thin film Technical Field The invention belongs to the technical field of solar cells, and particularly relates to a method for improving the crystallization quality of a perovskite thin film. Background Perovskite solar cells have received extensive attention and research as a novel photovoltaic technology having advantages of low energy consumption, low cost, abundant raw material sources, simple preparation process and the like. At present, the battery is continuously improved in photoelectric conversion efficiency, and the large-scale preparation technology is also significantly broken through. In the preparation of perovskite solar cells, spin-on alumina is widely used to modify the interface, primarily to improve the wettability of the charge transport layer (e.g., meO-2 PACz) to facilitate the spreading of the perovskite precursor solution, and secondly to fill the voids present in the MeO-2PACz layer. However, the alumina employed in this process is typically present in the form of nanoparticles and has an inherent tendency to agglomerate. The agglomeration phenomenon can obviously increase the roughness of the interface, thereby negatively affecting the subsequent crystallization process of the perovskite layer, causing defects of imperfect crystallization, hole generation and the like of the buried interface, and finally damaging the performance of the device. The crystallization of perovskite is a complex unbalanced process, starting at the buried interface and extending into the bulk of the film. Therefore, the perovskite crystallization process is affected by the bulk and buried interface, and the crystallization process cannot be well controlled by changing the buried substrate quality or adding a passivating agent into the perovskite precursor in the prior art. Therefore, there is a need to develop a new method for improving the crystallization quality of perovskite thin films to solve the above problems. Disclosure of Invention In order to solve the problems set forth in the background art, an object of the present invention is to provide a method for improving the crystallization quality of perovskite thin films. The invention utilizes atomic layer deposition technology to prepare a flat buried bottom interface, and N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride is added into a perovskite precursor, and the interface and the body are synergistic to jointly regulate and control the perovskite nucleation crystallization process. In order to achieve the above purpose, the technical scheme adopted by the invention is that, on one hand, the invention provides a method for improving the crystallization quality of a perovskite thin film, which comprises the following steps: Preparing a buried bottom interface through atomic layer deposition; Adding N- (6-amino hexyl) -1-Naphthalene Sulfonamide Hydrochloride (NSH) into a perovskite precursor solution to obtain a perovskite precursor solution containing N- (6-amino hexyl) -1-naphthalene sulfonamide hydrochloride, and depositing the perovskite precursor solution containing N- (6-amino hexyl) -1-naphthalene sulfonamide hydrochloride on a buried bottom interface to obtain a perovskite film; the buried bottom interface is an aluminum oxide film, a tin oxide film, a zinc oxide film, an indium oxide film or a titanium oxide film; The pulse time of the metal source in the atomic layer deposition is 0.01-0.02s, and the pulse time of the oxidation source in the atomic layer deposition is 0.001-1s. The invention adds N- (6-amino hexyl) -1-naphthalene sulfonamide hydrochloride into the perovskite precursor solution, so that the oxygen atom in sulfonamide in N- (6-amino hexyl) -1-naphthalene sulfonamide hydrochloride and aluminum ion, tin ion, zinc ion, indium ion or titanium ion have coordination effect, and the perovskite crystallization is regulated and controlled cooperatively from two aspects of a body and an interface. Further, the metal source used for the atomic layer deposition is an aluminum source, a tin source, a zinc source, an indium source or a titanium source; the aluminum source is trimethylaluminum or triisobutylaluminum; the tin source is tetra (dimethylamino) tin; The zinc source is diethyl zinc; The indium source is trimethyl indium; The titanium source is tetra (dimethylamino) titanium. Further, the oxidation source used for atomic layer deposition is water, ozone or hydrogen peroxide. Further, the buried bottom interface has a thickness of 0.3-8A. Further, the perovskite precursor solution is 1.5mol/L of FA 0.814MA0.136Cs0.05Pb(I0.923Br0.045Cl0.032)3 solution. Further, the ratio between the perovskite precursor solution and the N- (6-aminohexyl) -1-naphthalene sulfonamide hydrochloride is 1mL (0.2-0.5 mg). In another aspect, the present invention provides a perovskite thin film prepared by any one of the methods for improving the crystalline quality of a perovskite thi