CN-121985708-A - Perovskite film and preparation method and application thereof

CN121985708ACN 121985708 ACN121985708 ACN 121985708ACN-121985708-A

Abstract

The invention provides a perovskite film, a preparation method and application thereof. The preparation method comprises the steps of providing a perovskite precursor solution, coating the perovskite precursor solution on a substrate to form a perovskite wet film, annealing the perovskite wet film to obtain a perovskite film, and applying an auxiliary air flow and an auxiliary electric field simultaneously in the annealing process, wherein the flow direction of the auxiliary air flow is parallel to the plane of the perovskite wet film, and the direction of the auxiliary electric field is perpendicular to the plane of the perovskite wet film. According to the invention, a multi-physical field coupling environment formed by auxiliary airflow and an auxiliary electric field is introduced, so that the dynamic effect of airflow and the electrostatic guiding effect of the electric field are synchronously exerted in the annealing process, and the nucleation and growth processes of the perovskite film are cooperatively optimized; the coupling technology can improve the crystallization orientation degree and the crystal grain order of the perovskite film, inhibit the ion disordered migration, reduce the defect density of the film and improve the uniformity and the stability of the perovskite film.

Inventors

HE CHENXU
Chen Koucheng
LI ZIJIA
LI XIAOWEI
JIN TONG
WANG YONG

Assignees

正泰新能科技股份有限公司

Dates

Publication Date: 20260505
Application Date: 20260203

Claims (10)

1. A method for preparing a perovskite thin film, comprising the steps of: providing a perovskite precursor solution; Coating the perovskite precursor solution on a substrate to form a perovskite wet film; annealing the perovskite wet film to obtain the perovskite film; in the annealing treatment process, an auxiliary air flow and an auxiliary electric field are applied at the same time, the flow direction of the auxiliary air flow is parallel to the plane of the perovskite wet film, and the direction of the auxiliary electric field is perpendicular to the plane of the perovskite wet film.
2. The method of preparing according to claim 1, wherein the auxiliary gas stream flows in parallel in a laminar flow over the upper surface of the perovskite wet film; and/or the auxiliary gas stream comprises any one of nitrogen, argon or dry air; and/or the flow rate of the auxiliary air flow is 10-15cm/s, and the relative humidity is less than or equal to 20% RH; and/or the temperature of the auxiliary air flow is 20-25 ℃.
3. The method according to claim 1 or 2, wherein the positive electrode of the auxiliary electric field is located on the upper surface side of the perovskite wet film, and the negative electrode is located on the lower surface side of the perovskite wet film; the vertical distance between the positive electrode and the negative electrode of the auxiliary electric field is 1-5cm; The vertical distance between the positive electrode and the negative electrode of the auxiliary electric field and the perovskite wet film is 1 cm to 3cm independently.
4. A method of producing according to any one of claims 1 to 3, wherein the electric field strength of the auxiliary electric field is 1 to 5V/μm; and/or, the auxiliary electric field is a direct current electric field.
5. The method of any one of claims 1 to 4, wherein the perovskite thin film has a chemical formula ABX 3 , wherein a comprises any one or a combination of at least two of formamidine ions, methylamine ions, or cesium ions, B comprises lead ions and/or tin ions, and X comprises any one or a combination of at least two of chloride ions, bromide ions, or iodide ions; and/or the temperature of the annealing treatment is 100-150 ℃, and the time of the annealing treatment is 5-15min.
6. The preparation method according to any one of claims 1 to 5, characterized in that the preparation method comprises the steps of: (1) Preparing perovskite precursor solution with the concentration of 1.1-1.7 mol/L; Spin-coating the perovskite precursor solution on a substrate, and dripping an anti-solvent in the spin-coating process to obtain a perovskite wet film; The spin coating method is a one-step spin coating method or a two-step spin coating method, wherein the antisolvent comprises ethyl acetate; (2) Transferring the perovskite wet film to a heating table in a closed annealing cavity, and carrying out annealing treatment for 5-15min at 100-150 ℃ by assisting an auxiliary air flow with the flow speed of 10-15cm/s, the relative humidity of less than or equal to 20% RH and the temperature of 20-25 ℃ and an auxiliary electric field with the electric field strength of 1-5V/mu m to obtain a perovskite film; The perovskite wet film heating device comprises a heating table, wherein air flow channels are arranged on two sides of the heating table, so that auxiliary air flows in a laminar flow mode and flow through the upper surface of the perovskite wet film in parallel, positive plates and negative plates are respectively arranged on the upper side and the lower side of the heating table, so that an auxiliary electric field perpendicular to a plane where the perovskite wet film is located is generated, the vertical distance between the positive plates and the negative plates is 1-5cm, the vertical distance between the positive plates and the negative plates and the perovskite wet film is 1-3cm respectively, and the materials of the positive plates and the negative plates respectively comprise any one of stainless steel, gold-plated plates or copper-plated plates.
7. A perovskite thin film, wherein the perovskite thin film is prepared by the preparation method according to any one of claims 1 to 6.
8. A single junction perovskite solar cell comprising a conductive substrate, a first charge transport layer, the perovskite thin film of claim 7, a second charge transport layer, and an electrode in a stacked arrangement; wherein the charges transferred by the first charge transfer layer and the second charge transfer layer are opposite in electrical property.
9. The single junction perovskite solar cell of claim 8, wherein the conductive substrate is a rigid substrate or a flexible substrate; And/or the thickness of the perovskite thin film is 400-700nm; And/or an interface passivation layer is further arranged between the perovskite film and the second charge transmission layer, the material of the interface passivation layer comprises any one or a combination of at least two of phenethyl iodized amine, monoiodopiperazine or dimethyl ammonium iodide, and the thickness of the interface passivation layer is 1-3nm.
10. The perovskite/crystalline silicon two-end laminated battery is characterized by comprising a crystalline silicon bottom battery and a perovskite top battery which are laminated, wherein the crystalline silicon bottom battery and the perovskite top battery are connected through a tunnel junction; Wherein the perovskite top cell comprises the perovskite thin film as claimed in claim 7.

Description

Perovskite film and preparation method and application thereof Technical Field The invention belongs to the technical field of photovoltaics, and particularly relates to a perovskite film, a preparation method and application thereof. Background The perovskite film has wide application prospect in the fields of photovoltaics, photoelectric detectors, light-emitting diodes and the like due to the excellent photoelectric performance. Particularly in the photovoltaic field, perovskite solar cells are becoming a hot spot of research in recent years, with the advantages of their high photoelectric conversion efficiency and low cost production. According to literature reports, the authentication efficiency of perovskite solar cells exceeds 27%. In addition, flexible perovskite solar cells have received widespread attention for their potential use in wearable devices and photovoltaic construction. However, perovskite thin film preparation on flexible substrates faces challenges such as uniformity and stability, which directly affect the performance of the device. The properties of perovskite thin films are not only dependent on their chemical composition, but are also closely related to their crystalline quality. For example, defect density and grain boundary distribution in thin films can significantly affect charge transport efficiency and device stability. Therefore, optimizing the crystallization process of perovskite thin films is critical to improving device performance. Although the conventional perovskite thin film crystallization method has promoted the development of the related art to some extent, it has many limitations in practical application. Firstly, although the conventional thermal annealing method can effectively promote crystal growth, due to lack of accurate control of ion migration behavior, the defect density in the film is often high, and particularly under the condition of long-time high-temperature annealing, the formation of uncoordinated Pb 2+ or Pb clusters obviously reduces the stability of the film. Secondly, although the solution method has good process operability, the solution method has limited capability of regulating and controlling the uniformity of the film, and particularly, the solution method is easy to generate phenomena of local stress concentration and defect aggregation when being deposited on a flexible substrate. In addition, the conventional methods are inferior in terms of improving the degree of orientation of the film, for example, it is difficult to achieve crystallization of highly preferred orientation by the thermal annealing method, and the solution rule is subject to non-uniformity of the solvent evaporation rate. These deficiencies not only limit the application performance of perovskite thin films in photovoltaic and optoelectronic devices, but also provide urgent demands for developing novel synergistic regulation methods. Therefore, how to cooperatively regulate and control the crystal orientation, reduce the defect density and improve the uniformity of the film layer in the preparation process of the perovskite film is a technical problem to be solved. Disclosure of Invention Aiming at the defects of the prior art, the invention aims to provide a perovskite film, and a preparation method and application thereof. The coupling technology not only can realize the cooperative regulation and control of the perovskite film crystallization process and improve the crystallization orientation degree and the grain order of the perovskite film, but also can effectively inhibit the disordered migration of ions, reduce the defect density of the film and further improve the uniformity and the stability of the perovskite film. Based on the multi-physical field coupling technology, the prepared perovskite film has obvious advantages in the aspects of crystal orientation degree, defect density, uniformity and the like, and lays a foundation for large-scale production of high-performance perovskite devices. In order to achieve the aim of the invention, the invention adopts the following technical scheme: In a first aspect, the present invention provides a method for producing a perovskite thin film, the method comprising the steps of: A perovskite precursor solution is provided. The perovskite precursor solution is coated on a substrate to form a perovskite wet film. And annealing the perovskite wet film to obtain the perovskite film. In the annealing treatment process, an auxiliary air flow and an auxiliary electric field are applied at the same time, the flow direction of the auxiliary air flow is parallel to the plane of the perovskite wet film, and the direction of the auxiliary electric field is perpendicular to the plane of the perovskite wet film. The coupling technology not only can realize the cooperative regulation and control of the perovskite film crystallization process and improve the crystallization orientation degree and the grain order of the perovskite