CN-121985712-A - P2 wire slot post-treatment method of perovskite solar cell and perovskite cell

Abstract

The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to a P2 wire slot post-treatment method of a perovskite solar cell and the perovskite solar cell. The method comprises the steps of applying an absolute alcohol solvent to the etched film surface of the device, enabling the solvent to be in contact with the P2 wire groove area and keeping the contact time for 5-30 seconds, removing redundant solvent on the film surface, drying the device to remove residual solvent, introducing the absolute alcohol solvent after P2 laser etching to carry out aftertreatment, effectively dissolving, loosening and removing residual of a hole transmission layer such as NiO x which cannot be removed by laser, cleaning and activating the exposed ITO surface, and providing a clean and high-activity interface for electrode deposition, so that series contact resistance among sub-cells is remarkably reduced, adhesive force and mechanical stability of the electrode at the P2 wire groove are greatly improved, and further photoelectric conversion efficiency and long-term reliability of the assembly are improved.

Inventors

• ZHANG AIHUA
• LIU KEYONG
• CHEN RU

Assignees

• 大正(厦门)微纳科技有限公司

Dates

Publication Date

20260505

Application Date

20260122

Claims (9)

1. 1. The P2 wire slot post-treatment method of the perovskite solar cell is characterized by comprising the following steps of: applying an absolute alcohol solvent to the etched device film surface, and enabling the solvent to be in contact with the P2 wire groove area and kept for 5-30 seconds; and removing redundant solvent on the film surface, and drying the device to remove residual solvent.
2. 2. The P2 wire chase post-treatment method of a perovskite solar cell according to claim 1, wherein the anhydrous alcohol solvent is anhydrous ethanol or anhydrous isopropanol.
3. 3. The P2 wire-slot post-processing method of a perovskite solar cell according to claim 1, wherein the application mode is a coating method, a slit coating method or a doctor blade method.
4. 4. The post-treatment method for the P2 wire chase of the perovskite solar cell according to claim 1, wherein the drying mode is vacuum drying or air gun blowing drying, the drying process is carried out at normal temperature, and the drying time is 0.5 to 5 minutes.
5. 5. The post-treatment method for P2 wire chase of perovskite solar cell according to claim 4, wherein when vacuum drying is employed, vacuum degree is not lower than 0.1 MPa.
6. 6. A method for preparing a perovskite solar cell, comprising the steps of: preparing a hole transport layer on the transparent conductive substrate engraved with the P1 pattern; Sequentially preparing a perovskite light absorption layer, an electron transport layer and an atomic layer deposition tin oxide layer on the hole transport layer, and then laser etching a P2 wire slot; processing the P2 trunking using the P2 trunking post-processing method of any one of claims 1 to 5; and then carrying out laser etching P3 to finish the preparation of the battery.
7. 7. The method of claim 6, wherein the hole transport layer is a NiO x layer.
8. 8. The method of manufacturing a perovskite solar cell according to claim 6, wherein the electrode is manufactured by a magnetron sputtering method or a vacuum evaporation method.
9. 9. A perovskite solar cell, characterized in that it is prepared by the method according to any one of claims 6-8, said perovskite solar cell having a trans-structure.

Description

P2 wire slot post-treatment method of perovskite solar cell and perovskite cell Technical Field The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to a P2 wire slot post-treatment method of a perovskite solar cell and the perovskite solar cell. Background Perovskite solar cells are a promising photovoltaic technology, where the fabrication of large area components requires the splitting and serial connection of thin films into multiple subcells by laser scribing (P1, P2, P3). Wherein, the P2 scribe line is a key step for forming a serial connection between subcells, and is used for completely etching away the hole transport layer, the perovskite layer, the electron transport layer, etc. of the first subcell, exposing the bottom transparent conductive oxide (such as ITO) electrode so as to form ohmic contact with the top electrode of the second subcell deposited subsequently, thus forming a serial channel of "top electrode-ITO-top electrode". The quality of the channel directly determines the series resistance and efficiency of the assembly. However, due to factors such as the volatility of the laser process, the characteristics of the thin film material, and the interfacial bonding strength, a hole transporting layer material (e.g., niO x) is very likely to remain on the sidewall of the trench after the P2 scribe. These residues can greatly increase the series contact resistance, resulting in reduced component fill factor and efficiency. In addition, the adhesion force between the subsequent deposited electrode and the side wall of the wire slot can be weakened due to the residues and the pollution caused by laser, the electrode is easy to fall off under the thermal stress or mechanical stress, and the long-term reliability of the assembly is seriously affected. Currently, the main direction of improving the quality of P2 scribe lines in the industry is focused on optimizing laser parameters (such as wavelength, energy, pulse frequency), but this is limited by equipment capability and high cost, and it is difficult to thoroughly solve the material residue and interface contamination problems. Therefore, there is an urgent need for a simple, low cost and efficient auxiliary process that can further clean and optimize the P2 wire chase after laser scribing to ensure efficient and reliable series connection. Disclosure of Invention Aiming at the problems in the prior art, the invention provides a P2 wire groove post-treatment method of a perovskite solar cell and the perovskite solar cell, which can clean and optimize the P2 wire groove and ensure the connection reliability between an electrode and the side wall of the wire groove. In order to achieve the above purpose, the technical scheme provided by the invention is as follows: In a first aspect, the application provides a P2 wire-groove post-treatment method of a perovskite solar cell, which is performed after laser etching to form a P2 wire groove and before depositing an electrode, and comprises the following steps: applying an absolute alcohol solvent to the etched device film surface, and enabling the solvent to be in contact with the P2 wire groove area and kept for 5-30 seconds; and removing redundant solvent on the film surface, and drying the device to remove residual solvent. Optionally, the absolute alcohol solvent is absolute ethanol or absolute isopropanol. Alternatively, the application is by a coating method, a slot coating method or a doctor blade method. Optionally, the drying mode is vacuum drying or air gun blowing drying, and the drying process is carried out at normal temperature, and the drying time is 0.5 to 5 minutes. Alternatively, when vacuum drying is employed, the vacuum degree is not less than 0.1 MPa. In a second aspect, the present application also provides a method for preparing a perovskite solar cell, comprising the steps of: preparing a hole transport layer on the transparent conductive substrate engraved with the P1 pattern; Sequentially preparing a perovskite light absorption layer, an electron transport layer and an atomic layer deposition tin oxide layer on the hole transport layer, and then laser etching a P2 wire slot; processing the P2 trunking using the P2 trunking post-processing method of any one of claims 1 to 5; and then carrying out laser etching P3 to finish the preparation of the battery. Optionally, the hole transport layer is a NiO x layer. Alternatively, the electrode is prepared by a magnetron sputtering method or a vacuum evaporation method. In a third aspect, the present application also provides a perovskite solar cell, which is prepared by the method according to the second aspect, and the perovskite solar cell has a trans-structure. Compared with the prior art, the invention has at least the following beneficial effects: According to the invention, the post-treatment is carried out by introducing the anhydrous alcohol solvent after the P2 lase