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CN-121985728-A - Preparation method and application of iron gallium tellurium two-dimensional material thin layer based on rolling shear force

CN121985728ACN 121985728 ACN121985728 ACN 121985728ACN-121985728-A

Abstract

The invention discloses a preparation method and application of a thin layer of an iron gallium tellurium two-dimensional material based on rolling shear force, wherein the method comprises the steps of fixing iron gallium tellurium bulk crystals on the adhesive surface of an adhesive tape, and obtaining the fixed iron gallium tellurium bulk crystals; based on the competitive adhesion principle, repeatedly folding and stripping the fixed iron gallium tellurium bulk crystal to obtain an adhesive tape adhered with the iron gallium tellurium two-dimensional material thin layer, attaching PDMS to the surface of the cylindrical rod, and rolling the adhesive tape adhered with the iron gallium tellurium two-dimensional material thin layer by rolling shearing force to prepare the iron gallium tellurium two-dimensional material thin layer. The invention can replace the traditional vertical stripping instantaneous impact force by rolling shear force, and improve the thickness and the integrity of the thin layer of the iron gallium tellurium two-dimensional material. The preparation method and application of the thin layer of the iron gallium tellurium two-dimensional material based on rolling shear force can be widely applied to the technical field of two-dimensional material preparation.

Inventors

  • YANG ZHONGMIN
  • LIN JIWEI
  • LI LIHUA
  • CHEN JIEWEI
  • SU JIAXIN

Assignees

  • 华南师范大学

Dates

Publication Date
20260505
Application Date
20260121

Claims (9)

  1. 1. The preparation method of the iron gallium tellurium two-dimensional material thin layer based on the rolling shearing force is characterized by comprising the following steps of: Will be The bulk crystal is fixed on the adhesive surface of the adhesive tape to obtain the fixed crystal A bulk crystal; Based on the principle of competitive adhesion, after fixation Repeatedly folding and stripping the bulk crystal to obtain the adhesive product Adhesive tape of a two-dimensional material thin layer; applying PDMS to the surface of the cylindrical rod, and adhering the PDMS to the cylindrical rod by rolling shear force Rolling the adhesive tape with two-dimensional material thin layer to prepare A thin layer of two-dimensional material.
  2. 2. The method for preparing the iron gallium tellurium two-dimensional material thin layer based on rolling shear force as set forth in claim 1, wherein the adhesive tape is a blue tape with polyester film as a base material and coated with acrylic pressure-sensitive adhesive.
  3. 3. The method for producing a thin layer of a two-dimensional material of iron gallium tellurium based on rolling shear force according to claim 2, wherein the number of times of the repeated folding and peeling operations is in the range of 3 to 10 times.
  4. 4. The method for preparing a thin layer of a two-dimensional material of iron gallium tellurium based on rolling shear force as defined in claim 3, wherein the PDMS is adhered to the surface of the cylindrical rod by rolling shear force Rolling the adhesive tape with two-dimensional material thin layer to prepare The two-dimensional material thin layer comprises the following steps: Acquiring PDMS, a cylindrical rod and a glass slide; mechanical removing treatment is carried out on the upper and lower layers of protection films of the PDMS, and one adhesive surface of the PDMS is attached around the outer surface of the cylindrical rod; adhering the other adhesive surface of PDMS to The adhesive tape of the two-dimensional material thin layer is attached, rolling stripping is carried out at a preset angle and speed by rolling shearing force based on the adhesion difference of the two-dimensional material thin layer and the adhesive tape, and the two-dimensional material thin layer is removed Peeling the thin layer of the two-dimensional material onto the PDMS of the cylindrical rod; Spreading PDMS on cylindrical rod by tweezers, and attaching to glass slide A thin layer of two-dimensional material.
  5. 5. The method for preparing the iron gallium tellurium two-dimensional material thin layer based on the rolling shearing force according to claim 4, wherein the preset angle is 90-180 degrees, and the speed is 1-10 mm/s.
  6. 6. The method for preparing a thin layer of a two-dimensional material of iron gallium tellurium based on rolling shear force as defined in claim 5, further comprising the steps of And transferring the two-dimensional material thin layer onto a target substrate, and performing annealing treatment.
  7. 7. The method for preparing the thin-layer of the iron gallium tellurium two-dimensional material based on the rolling shear force according to claim 6, wherein the target substrate is any one of a silicon wafer, a sapphire or a flexible PET substrate, the surface of which is covered with 300nm silicon dioxide.
  8. 8. The method for preparing a thin layer of a two-dimensional material of iron gallium tellurium based on rolling shear force as defined in claim 7, wherein the method comprises the steps of The thickness of the thin layer of two-dimensional material is less than 300nm.
  9. 9. A method as claimed in any one of claims 1 to 8 The use of a thin layer of two-dimensional material, characterized in that The two-dimensional material thin layer is applied to preparing room temperature ferromagnetic two-dimensional material devices.

Description

Preparation method and application of iron gallium tellurium two-dimensional material thin layer based on rolling shear force Technical Field The invention relates to the technical field of two-dimensional material preparation, in particular to a preparation method and application of a thin layer of an iron gallium tellurium two-dimensional material based on rolling shear force. Background As a two-dimensional van der Waals material with room-temperature ferromagnetism, (iron gallium tellurium) has important application potential in the fields of spin electronic devices, magnetic sensors and the like. At present, a mechanical stripping method is a main means for obtaining a two-dimensional material thin layer, but the traditional vertical stripping mode of 'straight up and down' has the problems of stress concentration, insufficient size and integrity, low transfer precision and the like. In the stress concentration problem, the peeling instant stress is concentrated on the edge of the material, which is easy to cause brittlenessThe thin layer is cracked or broken, the whole thin layer with the thickness smaller than 300nm and the transverse dimension larger than 50 mu m is difficult to obtain on the aspect of insufficient size and integrity, the success rate is low, the repeatability is poor, and the thin layer is easy to wrinkle, pollute or misplace in the transferring process to influence the preparation of subsequent devices on the aspect of transferring precision. In the related art, attempts have also been made to improve the peeling effect by optimizing the adhesive tape adhesion or introducing an intermediate carrier, but the essential problem of poor controllability of the stress distribution and transfer has not been solved. Disclosure of Invention In order to solve the technical problems, the invention aims to provide a preparation method and application of a thin layer of an iron gallium tellurium two-dimensional material based on rolling shearing force, which can replace the traditional vertical stripping instant impact force by the rolling shearing force and improve the quality of the materialThe thickness and integrity of the thin layer of two-dimensional material. The first technical scheme adopted by the invention is that the preparation method of the iron gallium tellurium two-dimensional material thin layer based on rolling shearing force comprises the following steps: Will be The bulk crystal is fixed on the adhesive surface of the adhesive tape to obtain the fixed crystalA bulk crystal; Based on the principle of competitive adhesion, after fixation Repeatedly folding and stripping the bulk crystal to obtain the adhesive productAdhesive tape of a two-dimensional material thin layer; applying PDMS to the surface of the cylindrical rod, and adhering the PDMS to the cylindrical rod by rolling shear force Rolling the adhesive tape with two-dimensional material thin layer to prepareA thin layer of two-dimensional material. Further, the adhesive tape is a blue tape which uses a polyester film as a base material and is coated with acrylic pressure-sensitive adhesive. Further, the number of times of the repeated folding and peeling operations is in the range of 3 to 10 times. Further, the PDMS is adhered to the surface of the cylindrical rod, and is adhered with the cylindrical rod by rolling shearing forceRolling the adhesive tape with two-dimensional material thin layer to prepareThe two-dimensional material thin layer comprises the following steps: Acquiring PDMS, a cylindrical rod and a glass slide; mechanical removing treatment is carried out on the upper and lower layers of protection films of the PDMS, and one adhesive surface of the PDMS is attached around the outer surface of the cylindrical rod; adhering the other adhesive surface of PDMS to The adhesive tape of the two-dimensional material thin layer is attached, rolling stripping is carried out at a preset angle and speed by rolling shearing force based on the adhesion difference of the two-dimensional material thin layer and the adhesive tape, and the two-dimensional material thin layer is removedPeeling the thin layer of the two-dimensional material onto the PDMS of the cylindrical rod; Spreading PDMS on cylindrical rod by tweezers, and attaching to glass slide A thin layer of two-dimensional material. Further, the preset angle is 90-180 degrees, and the speed is 1-10 mm/s. Further, it also comprisesAnd transferring the two-dimensional material thin layer onto a target substrate, and performing annealing treatment. Further, the target substrate is any one of a silicon wafer, a sapphire or a flexible PET substrate, the surface of which is covered with 300nm silicon dioxide. Further, the saidThe thickness of the thin layer of two-dimensional material is less than 300nm. The second technical proposal adopted by the invention is the application of the thin layer of the iron gallium tellurium two-dimensional material based on rolling sh