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CN-121985729-A - Self-spinning nano-oscillator based on semen cassiae and multi-value storage method

CN121985729ACN 121985729 ACN121985729 ACN 121985729ACN-121985729-A

Abstract

The invention provides a spintronic nanometer oscillator based on a semen cassiae and a multi-value storage method, which comprises a substrate, a bottom electrode, a heavy metal layer, a free layer, an insulating layer, a fixed layer and a top electrode which are sequentially arranged from bottom to top; the free layer is a nano-disk carrying the Sjog semen, the bottom electrode and the top electrode are used for outputting and detecting oscillating frequency signals, and the heavy metal layer is used for outputting magnetic resistance signals, wherein different numbers of Sjog semen are obtained according to different injection currents so as to output different magnetic resistance values, and multi-value storage is realized. By sequentially arranging the heavy metal layer, the free layer, the insulating layer and the fixed layer between the bottom electrode and the top electrode, a specific number of the Sjog semen can be directly and electrically controlled to be directly and stably driven to continuously oscillate when different currents are injected, so that the accurate mapping of a current value and the Sjog semen number is realized, a reliable method is provided for multi-value storage, and the problem of how to realize accurate multi-value storage by using a spin nano-oscillator based on the Sjog semen is solved.

Inventors

  • WU XUEFENG
  • JI LI
  • SUN QINGQING
  • ZHANG WEI
  • SHEN XIAOLIANG

Assignees

  • 上海集成电路制造创新中心有限公司

Dates

Publication Date
20260505
Application Date
20260121

Claims (11)

  1. 1. The spin nanometer oscillator based on the semen cassiae is characterized by comprising a substrate, a bottom electrode, a heavy metal layer, a free layer, an insulating layer, a fixed layer and a top electrode which are sequentially arranged from bottom to top, wherein the free layer is a nanometer disk carrying the semen cassiae, the bottom electrode and the top electrode are used for outputting and detecting oscillating frequency signals, the heavy metal layer is used for outputting magnetic resistance signals, and different quantities of semen cassiae are obtained according to different injection currents so as to output different magnetic resistance values, and multi-value storage is realized.
  2. 2. The spintronic nanooscillator of claim 1, wherein the free layer, the insulating layer and the fixed layer are concentric disk structures having a radius of 50nm.
  3. 3. The spintronic nanooscillator based on the cassia seed of claim 1, wherein the thickness of the free layer is 0.5-3 nm.
  4. 4. The spintronic nanooscillator of claim 1, wherein the free layer is a magnetic thin film layer, the free layer comprises a material capable of generating room temperature spintronic, the material in the free layer has an interface DMI with a DMI constant of 2.8-3.0 mJ/m 3 .
  5. 5. The spinnanooscillator of claim 1, wherein the heavy metal layer has a strong spin-orbit coupling for generating DMI capable of stabilizing the spinrequirements.
  6. 6. The spintronic nanooscillator of claim 1, wherein the insulating layer is made of a non-magnetic conductive material or a non-magnetic insulating material.
  7. 7. The spinnanooscillator of claim 1, wherein the material of the fixed layer is a hard magnetic material.
  8. 8. The spinnanooscillator of claim 1, wherein the spin magnetization direction of the pinned layer is vertically downward.
  9. 9. A multi-value storage method, characterized by comprising: injecting a current into the spintronic nanooscillator based on the cassia seed according to any one of claims 1-8; adjusting injection current to obtain different numbers of the semen cassiae; and realizing multi-value storage according to different numbers of the cassia seeds.
  10. 10. The multi-value storage method according to claim 9, wherein a direction of injecting current into the spintronic nanooscillator based on the spintronic nanooscillator is vertically downward, and a density of the injected current reaches 150 to 250ma/cm 2 .
  11. 11. The multi-value storage method according to claim 10, wherein the method of adjusting the injection current to obtain different numbers of the cassia seeds comprises: When the density of the injected current reaches 150MA/cm 2 , the number of the cassia seeds is 2; When the density of the injected current reaches 180MA/cm 2 , the number of the cassia seeds is 3; When the density of the injected current reaches 200MA/cm 2 , the number of the cassia seeds is 4; when the density of the injected current reaches 250MA/cm 2 , the number of the cassia seeds is 5.

Description

Self-spinning nano-oscillator based on semen cassiae and multi-value storage method Technical Field The invention relates to the technical field of storage, in particular to a spinodal nano-oscillator based on a Sjog seed and a multi-value storage method. Background The core advantages of the space seed memory as a subversion technology based on nano topological magnetic structure are from the physical characteristics of small size, high stability and extremely low driving power consumption of the space seed, the method not only provides possibility for breaking through the density, energy efficiency and speed bottleneck of the traditional memory, but also becomes an ideal carrier for realizing the front-edge application of multi-value storage, memory calculation and the like. By utilizing the number, arrangement or dynamic state coding information of the cassia seeds, the technology is hopeful to store a plurality of bits in one physical unit or directly process data, so that a new path is opened up for constructing fusion function devices such as a nerve morphology calculation chip, a high-frequency signal source and the like while efficient storage is realized. In the prior art, the binary operation of generating/annihilating the cassia seeds is carried out by single current or magnetic field, and the traditional 0/1 binary storage is realized. To achieve multi-value storage (i.e., one memory cell stores multiple bits), it is necessary to precisely and independently control the number of the spinners within the cell. However, existing methods often lack the ability to fine, repeatable control of the number or collective dynamics of the spinners when injecting current or applying external magnetic fields, resulting in the inability to stably produce multiple distinguishable resistance states in the same device. Meanwhile, because the resistance difference is small and the signal to noise ratio is poor, the plurality of the Sjog sub-states are difficult to distinguish clearly only by means of static magnetic resistance. In addition, the scheme depending on an external magnetic field or a multi-terminal complex structure is not compatible with the mainstream CMOS integrated circuit process, and the difficulty of the manufacturing process is increased. Disclosure of Invention The invention aims to provide a spintronic nanooscillator based on a spintronic nanooscillator and a multi-value storage method, which at least solve the problem of how to realize accurate multi-value storage by utilizing the spintronic nanooscillator based on the spintronic nanooscillator. The invention provides a spinned nanometer oscillator based on a semen cassiae, which comprises a substrate, a bottom electrode, a heavy metal layer, a free layer, an insulating layer, a fixed layer and a top electrode which are sequentially arranged from bottom to top, wherein the free layer is a nanometer disk for bearing the semen cassiae, the bottom electrode and the top electrode are used for outputting and detecting oscillating frequency signals, the heavy metal layer is used for outputting magnetic resistance signals, and different quantities of semen cassiae are obtained according to different injection currents so as to output different magnetic resistance values, and multi-value storage is realized. Optionally, in the spintronic nanooscillator based on the spintronic seed, the free layer, the insulating layer and the fixed layer are concentric disc structures, and a radius of the concentric disc structures is 50nm. Optionally, in the spintronic nanooscillator based on the semen cassiae, the thickness of the free layer is 0.5-3 nm. Optionally, in the spinned nano-oscillator based on the semen cassiae, the free layer is a magnetic film layer, the material of the free layer comprises a material capable of generating the semen cassiae at room temperature, and the material in the free layer is provided with an interface DMI, wherein the DMI constant is 2.8-3.0 mJ/m 3. Optionally, in the spinnanooscillator based on the spindlem, the heavy metal layer has strong spin orbit coupling for generating DMI capable of stabilizing the spindlem. Optionally, in the spintronic nanooscillator based on the sterculia seed, the insulating layer is made of a non-magnetic conductive material or a non-magnetic insulating material. Optionally, in the spintronic nanooscillator based on the spintronic nanooscillator, the material of the fixed layer is a hard magnetic material. Optionally, in the spintronic nanooscillator based on the sterculia seed, a spin magnetization direction of the fixed layer is vertically downward. In order to solve the technical problem, the present invention further provides a multi-value storage method, including: injecting a current into the spinodal nanooscillator of any one of the preceding claims; adjusting injection current to obtain different numbers of the semen cassiae; and realizing multi-value storage according to different numbers