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CN-121985735-A - Controllable crystal orientation SnS2Resistive random access memory and preparation method thereof

CN121985735ACN 121985735 ACN121985735 ACN 121985735ACN-121985735-A

Abstract

The invention belongs to the technical field of electronic part manufacturing, and particularly relates to a controllable crystal orientation SnS 2 resistive random access memory and a preparation method thereof. The preparation method comprises the steps of evaporating an Au bottom electrode with the thickness of 300: 300 nm on the surface of a SiO 2 /Si substrate by adopting a vacuum evaporation method, preparing an SnS 2 resistance variable layer by adopting a tube sealing vulcanization method, evaporating a layer of Ag metal film by adopting a hard mask technology by adopting a vacuum thermal evaporation method, and completing the preparation of the SnS 2 resistance variable memory with the controllable crystal orientation. The invention has low energy requirement, further inhibits the generation of byproducts in the reaction system due to the high vacuum airtight environment in the tube sealing, improves the process stability, has low requirement on equipment and effectively reduces the production cost.

Inventors

  • Jian Jiaying
  • Gao Shukan
  • Dong Pifan
  • LI JINGJUN
  • LIU XING
  • XU JUNFENG
  • WEI YONGXING
  • JIN CHANGQING

Assignees

  • 西安工业大学

Dates

Publication Date
20260505
Application Date
20260205

Claims (7)

  1. 1. The preparation method of the controllable crystal orientation SnS 2 resistive random access memory is characterized by comprising the following steps of: Step one, adopting a vacuum evaporation method to evaporate an Au bottom electrode on the surface of a SiO 2 /Si substrate; Preparing the SnS 2 resistive layer by adopting a tube sealing vulcanization method: 2.1, preparing SnCl 2 -absolute ethanol solution; 2.2, spin-coating SnCl 2 -absolute ethyl alcohol solution on the surface of the Au bottom electrode in the first step to obtain a Sn-plated precursor substrate; 2.3, placing the Sn-plated precursor substrate and the S powder into a test tube, and vacuumizing and sealing the test tube; 2.4, placing the test tube into a muffle furnace for treatment to obtain a sample; 2.5, spin-coating PMMA on the surface of the sample after the reaction is finished to obtain a PMMA/SnS 2 /Au sample with controllable crystal orientation; and thirdly, preparing a top electrode, and evaporating a layer of Ag metal film in the PMMA/SnS 2 /Au sample in the second step by using a hard mask technology to prepare the controllable crystal orientation SnS 2 resistive random access memory.
  2. 2. The method for preparing the controllable crystal orientation SnS 2 resistive random access memory according to claim 1, wherein in the step 2.1, the concentration of SnCl 2 -absolute ethanol solution is 0.01-0.3 g/ml.
  3. 3. The method for preparing the controllable crystal orientation SnS 2 resistive random access memory according to claim 1, wherein in the step 2.4, the muffle furnace temperature is set to 300-800 ℃, and the temperature is kept for 1-180min.
  4. 4. The method for preparing the controllable crystal orientation SnS 2 resistive random access memory according to claim 1, wherein spin-coating rotational speeds in the step 2.1 and the step 2.5 are 500-8000rpm.
  5. 5. The method for manufacturing a controllable crystal orientation SnS 2 resistive random access memory according to claim 4, wherein the preferred spin-coating speed is 2000-6000rpm.
  6. 6. The method for manufacturing the controllable crystal orientation SnS 2 resistive random access memory according to claim 1, wherein in the third step, the vacuum degree is kept to be 5×10 -4 Pa during vapor deposition, and the rate is 0.1-0.15nm/s.
  7. 7. The controllable crystal orientation SnS 2 resistive random access memory prepared by the preparation method according to claim 1.

Description

Controllable crystal orientation SnS 2 resistive random access memory and preparation method thereof Technical Field The invention belongs to the technical field of electronic part manufacturing, and particularly relates to a controllable crystal orientation SnS 2 resistive random access memory and a preparation method thereof. Background Patent document with the application number of CN118302034A discloses a resistive switching device and a preparation method thereof. And spin-coating the Cs 2AgBiBr6 perovskite solution on a bottom electrode by adopting a spin-coating method, and then carrying out metal top electrode deposition to obtain the resistive device. The interface compatibility problem is easy to generate when the resistive random access memory dielectric layer and the substrate are prepared by adopting a spin coating method, and the process flow is long, so that a large-area uniform film is difficult to prepare, and the performance of the resistive random access memory is not improved. In the patent document with the application number of CN119486580A, a preparation method of a resistive random access memory is disclosed. The Mn doped ZnO target is prepared by a sol-gel method and used as a dielectric layer film, the lower intercalation film is prepared by pulse laser deposition, and then metal top electrode deposition is carried out to obtain the resistive random access device. The sol-gel method has the problems of long preparation period and easiness in residual organic impurities. The pulse laser method is not only complex in process, but also difficult to realize large-area and batch operation. The SnS 2 film is prepared by a traditional CVD method, and is mostly prepared by adopting SnO 2 powder and S powder as reaction raw materials through chemical vapor deposition. As shown in a CVD method for growing single-layer molybdenum diselenide and tin disulfide, snS 2 nano-sheets prepared by CVD are randomly grown on the surface of a substrate, and the distance between the nano-sheets is larger. In the resistive random access memory, electrodes at two ends are needed, and as a functional layer of the resistive random access memory, a thin film is easy to damage through processes such as stripping and transferring, byproducts are generated, and meanwhile, the resistive random access memory is reacted in a CVD tube furnace, so that the preparation process is complex and the cost is high. Disclosure of Invention The invention provides a controllable crystal orientation SnS 2 resistive random access memory and a preparation method thereof, which are used for solving the problems of easy damage to a film, byproduct generation, complex preparation process and high cost in the prior art. In order to achieve the purpose, the technical scheme of the invention is that the preparation method of the SnS 2 resistive random access memory with controllable crystal orientation comprises the following steps: Step one, adopting a vacuum evaporation method to evaporate an Au bottom electrode on the surface of a SiO 2/Si substrate; Preparing the SnS 2 resistive layer by adopting a tube sealing vulcanization method: 2.1, preparing SnCl 2 -absolute ethanol solution; 2.2, spin-coating SnCl 2 -absolute ethyl alcohol solution on the surface of the Au bottom electrode in the first step to obtain a Sn-plated precursor substrate; 2.3, placing the Sn-plated precursor substrate and the S powder into a test tube, and vacuumizing and sealing the test tube; 2.4, placing the test tube into a muffle furnace for treatment to obtain a sample; 2.5, spin-coating PMMA on the surface of the sample after the reaction is finished to obtain a PMMA/SnS 2/Au sample with controllable crystal growth; and thirdly, preparing a top electrode, and evaporating a layer of Ag metal film in the PMMA/SnS 2/Au sample in the second step by using a hard mask technology to prepare the controllable crystal orientation SnS 2 resistive random access memory. Further, in the above steps 2,1, the concentration of the SnCl 2 -absolute ethanol solution is 0.01-0.3 g/ml. Further, the temperature of the muffle furnace is set to 300-800 ℃, and the temperature is kept for 1-180 min. Further, the spin-coating speeds in the above steps 2.1 and 2.5 are 500-8000rpm. Further, the above-mentioned preferable spin coating rotation speed is 2000-6000rpm. Further, in the third step, the vacuum degree is kept at 5X 10 -4 Pa and the rate is 0.1-0.15 nm/s during vapor deposition. Furthermore, the controllable crystal direction SnS 2 resistive random access memory prepared by the preparation method is provided. 1. The invention adopts an Au bottom electrode and SnCl 2 -absolute ethanol solution as a reaction Sn source, and in the tube sealing reaction of the step two, the growth is carried out on an Au-plated substrate. Experiments show that the SnCl 2 -absolute ethyl alcohol solution is used as a reaction Sn source and a tube sealing method is combined, so that compared with the