CN-121985737-A - Metal halide film memristor and preparation method and application thereof

CN121985737ACN 121985737 ACN121985737 ACN 121985737ACN-121985737-A

Abstract

The invention belongs to the technical fields of semiconductor technology and neuromorphic hardware, and discloses a metal halide thin-film memristor, and a preparation method and application thereof; the inorganic resistive layer is a metal halide film, and the metal halide film is a cuprous iodide film; the bottom electrode is made of Indium Tin Oxide (ITO) and is used for inputting an external power supply electric signal; the top electrode is made of metal copper and is used for being connected with the ground; the cuprous iodide film is prepared by adopting a vacuum physical vapor deposition method; the metal halide film memristor provided by the invention can reach a large dynamic range of 6306 under the stimulation of-1V voltage, the response current is at microampere level, and the good volatile characteristic of the metal halide film memristor can be used for realizing neuron integration-release function simulation and can be applied to a self-adaptive sensing system.

Inventors

LING HAIFENG
SUN JINTAO
Ming Jianyu
WU SIQI
ZHU WEI

Assignees

南京邮电大学

Dates

Publication Date: 20260505
Application Date: 20260123

Claims (7)

1. A metal halide film memristor is characterized by sequentially comprising a bottom electrode, an inorganic resistance layer and a top electrode from bottom to top, wherein the inorganic resistance layer is a metal halide film, the metal halide film is a cuprous iodide film, the bottom electrode is made of Indium Tin Oxide (ITO) and is used for inputting an external power supply electric signal, the top electrode is made of metal copper and is used for being connected with the ground, and the cuprous iodide film is prepared by adopting a vacuum physical vapor deposition method.
2. The metal halide thin film memristor of claim 1, wherein the thickness of the cuprous iodide thin film is 30-50 nm.
3. The method of manufacturing a metal-halide thin film memristor of claim 1, comprising the steps of: step S1, cleaning a glass substrate with a bottom electrode Indium Tin Oxide (ITO); step S2, preparing a cuprous iodide film on the bottom electrode by adopting a vacuum physical vapor deposition method; and S3, preparing a metal copper top electrode on the cuprous iodide film by adopting a vacuum physical vapor deposition method.
4. A process according to claim 3, wherein the specific steps of step S1 are as follows: step S1.1, sequentially placing a glass substrate in acetone, absolute ethyl alcohol and deionized water, and cleaning in an ultrasonic cleaner for 5-15 minutes; S1.2, after the cleaning is finished, drying by nitrogen; S1.3, placing the dried glass substrate into an electrothermal blowing drying oven for drying for 30-60 minutes; and S1.4, placing the glass substrate dried in the step S1.3 into an ultraviolet ozone cleaning machine for cleaning for 10 minutes.
5. A process according to claim 3, characterized in that the specific steps of step S2 are as follows: S2.1, weighing a proper amount of CuI powder, fully grinding in a mortar, and placing a ground sample in a heating boat of a vacuum evaporation table; S2.2, depositing a CuI film with the thickness of 30-50 nm on a glass substrate with a bottom electrode indium tin oxide ITO by utilizing a vacuum physical vapor deposition method, controlling the vacuum degree to be 5X 10 -4 Pa, controlling the vapor deposition rate to be 0.5A/S, and controlling the thickness to be 30-50 nm by adopting a quartz crystal oscillator to obtain the glass substrate plated with the CuI film; And S2.3, placing the glass substrate coated with the CuI film prepared in the step S2.2 in a vacuum coating chamber with the vacuum degree lower than 5 multiplied by 10 -4 Pa, and cooling to room temperature.
6. A method according to claim 3, wherein the specific steps of step S3 are as follows: step S3.1, taking the glass substrate plated with the CuI film out of the vacuum coating chamber, preparing a mask plate, putting the mask plate into the vacuum coating chamber again, and starting to evaporate a metal Cu top electrode with the thickness of 20-30 nm after the vacuum degree in the chamber is lower than 5X 10 -4 Pa, wherein the evaporation rate is 1 a/S, and controlling the thickness to be 20-30 nm by adopting a quartz crystal oscillator; And S3.2, after the evaporation is finished, placing the glass substrate plated with the top electrode into a vacuum coating chamber with the vacuum degree lower than 5 multiplied by 10 -4 Pa, and cooling to room temperature.
7. Use of the metal-halide thin film memristor of claim 1 in the manufacture of an adaptive sensing device.

Description

Metal halide film memristor and preparation method and application thereof Technical Field The invention belongs to the technical field of semiconductor technology and neuromorphic hardware, and particularly relates to a metal halide thin-film memristor, a preparation method and application thereof. Background In the age of today where information technology and artificial intelligence are increasingly more influential, there is an urgent need for new computing systems with low power consumption and high sensitivity. However, as moore's law approaches its physical limit, the traditional von neumann architecture has difficulty keeping up with the ever-increasing computational demands. Entering the memristor, the sandwich structure integrates calculation and storage functions, and is hopeful to exceed the limitation of von neumann bottleneck. To further improve the performance of memristors, a variety of active materials have been explored, including metal oxides, amorphous silicon, nitrides, sulfides, polymers, 2D materials, and perovskite oxide metal halide perovskites. However, each material has its own advantages and limitations in terms of integration, performance and processability. Inorganic materials generally exhibit better scalability, integration density and operational reliability, but they require complex manufacturing processes and high temperatures, and are poorly durable under mechanical stress. The organic material provides biocompatibility and flexibility, making it suitable for use in bioelectronic or wearable systems, but its working principle, material synthesis, stability under ambient conditions require further investigation. Halide-based memristors, including various halide perovskites and metal halides as resistive switching materials, have become prominent candidates. Dihalides, particularly lead-free metal halides, provide enhanced phase stability, and are less prone to decomposition than ternary halide materials. For example, the memristor adopting the Ag/AlOx/CsI/Ag structure can simulate biological synaptic plasticity and neuron activity simultaneously under the regulation and control of different polarity voltages, and provides possibility for further neuromorphic calculation. Copper iodide CuI is an environment-friendly and nontoxic p-type wide band gap semiconductor material with excellent photoelectric properties, and is widely studied in various electronic devices, such as thermoelectric, flexible transparent p-n diodes, hole transport layers in solar cells and self-powered photodetectors. The memristor based on Pt/CuI/Ti structure adopts a solution process to prepare the CuI film, and the memristor has the characteristics of low working voltage, ultrafast switching speed and low power consumption, can simulate various synaptic behaviors, realizes product accumulation operation image convolution processing in a cross array, and verifies the application prospect in nerve morphology calculation and image processing. In addition, the columnar CuI film prepared by the solid-state iodination method realizes the non-molding and light-control resistance change operation within 0.5V, and has potential in optical storage, flexible devices and Internet of things systems. Despite the advances made in the above-described halide-based memristors, there are significant limitations to the prior art. Firstly, the current mainstream CuI preparation processes are all solution methods, most of the obtained devices are drift memristors, the inherent state relaxation characteristics of the devices result in weak state holding capacity and narrow negative conductance dynamic range, so that the devices are difficult to stably simulate widely and continuously variable signal intensity in a biological sensing system, the self-adaptive adjustment precision and range of the system to environmental input are limited, and the uniformity and reliability of the devices face challenges. Secondly, although a double-silver active electrode structure is adopted to realize the drift type and diffusion type conversion, the negative conductance dynamic range is still limited, the requirements of high sensitivity, wide response and complex signal integration required by the self-adaptive sensing system cannot be fully covered, and the real-time learning and adaptation capability of the system in a variable environment are restricted. Disclosure of Invention Aiming at the defects in the prior art, the invention provides a metal halide film memristor, a preparation method and application thereof, wherein the memristor adopts a vacuum evaporation coating mode to obtain a uniform and complete CuI film, the device can reach a large dynamic range of 6306 under the voltage stimulation of-1V, the response current is at the microampere level, and the good volatile characteristic of the device can be used for realizing neuron integration-release function simulation, so that favorable conditions are provided for realizing a